ORCID Profile
0000-0001-9400-6902
Current Organisation
Beijing Institute of Technology
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Electrical and Electronic Engineering | Antennas and Propagation | Compound Semiconductors | Photodetectors, Optical Sensors and Solar Cells
Emerging Defence Technologies | Expanding Knowledge in Engineering | National Security |
Publisher: The Electromagnetics Academy
Date: 2014
Publisher: IEEE
Date: 09-2018
Publisher: IOP Publishing
Date: 12-06-2020
Publisher: Wiley
Date: 02-07-2018
Publisher: American Chemical Society (ACS)
Date: 03-04-2015
DOI: 10.1021/NL504929N
Abstract: We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2019
Publisher: Elsevier BV
Date: 10-2016
Publisher: Wiley
Date: 06-06-2021
Abstract: High‐efficiency and wavelength‐tunable light‐emitting diode (LED) devices will play an important role in future advanced optoelectronic systems. Traditional semiconductor LED devices typically have a fixed emission wavelength that is determined by the energy of the emission states. Here, a novel high‐efficiency and wavelength‐tunable monolayer WS 2 LED device, which operates in the hybrid mode of continuous‐pulsed injection, is developed. This hybrid injection enables highly enhanced emission efficiency ( times) and effective size of emission area ( times) at room temperature. The emission wavelength of the WS 2 monolayer LED device can be tuned over more than 40 nm by driving AC voltages, from exciton emission to trion emission, and further to defect emission. The quantum efficiency of defect electroluminescence (EL) emission is measured to be more than 24.5 times larger than that from free exciton and trion EL emission. The separate carrier injection in the LED also demonstrates advantages in allowing defect species to be visualized and distinguished in real space. Those defects are assigned to be negatively charged defects. The results open a new route to develop high‐performance and wavelength‐tunable LED devices for future advanced optoelectronic applications.
Publisher: Wiley
Date: 27-10-2017
DOI: 10.1111/DESC.12354
Publisher: OSA
Date: 2013
Publisher: Springer Science and Business Media LLC
Date: 29-04-2022
DOI: 10.1038/S41377-022-00807-7
Abstract: Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III–V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths, as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In 0.16 Ga 0.84 As core/shell NW lasing at 1016 nm, an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation, as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths, multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers, even to the deep ultraviolet and THz range.
Publisher: Informa UK Limited
Date: 06-2013
Publisher: American Chemical Society (ACS)
Date: 23-08-2021
Publisher: IEEE
Date: 12-2012
Publisher: American Astronomical Society
Date: 08-2022
Abstract: We present a targeted search for continuous gravitational waves (GWs) from 236 pulsars using data from the third observing run of LIGO and Virgo (O3) combined with data from the second observing run (O2). Searches were for emission from the l = m = 2 mass quadrupole mode with a frequency at only twice the pulsar rotation frequency (single harmonic) and the l = 2, m = 1, 2 modes with a frequency of both once and twice the rotation frequency (dual harmonic). No evidence of GWs was found, so we present 95% credible upper limits on the strain litudes h 0 for the single-harmonic search along with limits on the pulsars’ mass quadrupole moments Q 22 and ellipticities ε . Of the pulsars studied, 23 have strain litudes that are lower than the limits calculated from their electromagnetically measured spin-down rates. These pulsars include the millisecond pulsars J0437−4715 and J0711−6830, which have spin-down ratios of 0.87 and 0.57, respectively. For nine pulsars, their spin-down limits have been surpassed for the first time. For the Crab and Vela pulsars, our limits are factors of ∼100 and ∼20 more constraining than their spin-down limits, respectively. For the dual-harmonic searches, new limits are placed on the strain litudes C 21 and C 22 . For 23 pulsars, we also present limits on the emission litude assuming dipole radiation as predicted by Brans-Dicke theory.
Publisher: IEEE
Date: 08-2018
Publisher: Research Square Platform LLC
Date: 30-11-2020
DOI: 10.21203/RS.3.RS-110731/V1
Abstract: High-efficiency and wavelength-tunable light emitting diode (LED) devices will play an important role in future advanced optoelectronic systems. Traditional semiconductor LED devices typically have a fixed emission wavelength that is determined by the energy of the emission states. Here, we developed a novel high-efficiency and wavelength-tunable monolayer WS 2 LED device, which operates in the hybrid mode of continuous-pulsed injection. This hybrid injection enables highly enhanced emission efficiency ( 20 times) and the effective size of emission area ( 5 times) at room temperature. The emission wavelength of WS 2 monolayer LED device can be tuned over more than 40 nm by driving AC voltages, from exciton emission to trion emission, and further to defect emissions. The quantum efficiency of defect electroluminescence (EL) emission is measured to be more than 24.5 times larger than that from free exciton and trion EL emissions. The separate carrier injection in our LED also demonstrate advantage in allowing to visualize and distinguish defect species in real space. Those defects are assigned to be negatively charged defects. Our results open a new route to develop high-performance and wavelength-tunable LED devices for future advanced optoelectronic applications.
Publisher: IOP Publishing
Date: 23-09-2016
DOI: 10.1088/0957-4484/27/43/435205
Abstract: Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.
Publisher: IOP Publishing
Date: 15-11-2022
Abstract: Polarization-sensitive infrared photodetectors are widely needed to distinguish an object from its surrounding environment. Polarization-sensitive detection can be realized by using semiconductors with anisotropic geometry or anisotropic crystal arrangement, such as semiconductor nanowires and two-dimensional (2D) materials. However, these photodetectors show drawbacks in low light absorption, weak polarization sensitivity and stability issues. Here, we designed 2D InAs nanosheet based arrays that are highly suitable for polarization-sensitive infrared photodetection. By using the finite element method (FEM) based on COMSOL Multiphysics, we optimized the geometry of single free-standing InAs nanosheets, obtaining dichroic ratio up to 127 (average) in the wavelength range of 2–3 μ m by reducing the thickness and increasing the height. Extending this to a nanosheet array with an optimized geometry, an enhancement of the absorption intensity from 45% (for a single nanosheet) to over 67% with a dichroic ratio exceeding 50 in the wavelength range of 2–3 μ m can be achieved. Moreover, these unique light absorption properties are tolerant to incident angles up to 30°. The design of such nanosheet array provides a new route for the development of high-performance infrared photodetectors for polarization photodetection.
Publisher: IEEE
Date: 09-2012
Publisher: The Optical Society
Date: 24-05-2011
DOI: 10.1364/AO.50.002391
Publisher: IEEE
Date: 09-2019
Publisher: IOP Publishing
Date: 21-02-2017
Abstract: With the recent advances in nanowire (NW) growth and fabrication, there has been rapid development and application of GaAs NWs in optoelectronics. It is also of importance to study the radiation tolerance of optoelectronic nano-devices for atomic energy and space-based applications. Here, photoluminescence (PL) and time-resolved photoluminescence measurements were carried out on GaAs/AlGaAs core/shell NWs at room temperature before and after 1 MeV proton irradiation with fluences ranging from 1.0 × 10
Publisher: The Optical Society
Date: 07-04-2017
DOI: 10.1364/OE.25.008986
Publisher: Informa UK Limited
Date: 12-2013
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2023
Publisher: Wiley
Date: 17-10-2019
Abstract: III-V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.
Publisher: MDPI AG
Date: 11-08-2021
DOI: 10.3390/S21165420
Abstract: Semiconductor nanowire arrays have been demonstrated as promising candidates for nanoscale optoelectronics applications due to their high detectivity as well as tunable photoresponse and bandgap over a wide spectral range. In the infrared (IR), where these attributes are more difficult to obtain, nanowires will play a major role in developing practical devices for detection, imaging and energy harvesting. Due to their geometry and periodic nature, vertical nanowire and nanopillar devices naturally lend themselves to waveguide and photonic crystal mode engineering leading to multifunctional materials and devices. In this paper, we computationally develop theoretical basis to enable better understanding of the fundamental electromagnetics, modes and couplings that govern these structures. Tuning the photonic response of a nanowire array is contingent on manipulating electromagnetic power flow through the lossy nanowires, which requires an intimate knowledge of the photonic crystal modes responsible for the power flow. Prior published work on establishing the fundamental physical modes involved has been based either on the modes of in idual nanowires or numerically computed modes of 2D photonic crystals. We show that a unified description of the array key electromagnetic modes and their behavior is obtainable by taking into account modal interactions that are governed by the physics of exceptional points. Such models that describe the underlying physics of the photoresponse of nanowire arrays will facilitate the design and optimization of ensembles with requisite performance. Since nanowire arrays represent photonic crystal slabs, the essence of our results is applicable to arbitrary lossy photonic crystals in any frequency range.
Publisher: IEEE
Date: 09-2018
Publisher: American Astronomical Society
Date: 28-07-2023
Abstract: The global network of gravitational-wave observatories now includes five detectors, namely LIGO Hanford, LIGO Livingston, Virgo, KAGRA, and GEO 600. These detectors collected data during their third observing run, O3, composed of three phases: O3a starting in 2019 April and lasting six months, O3b starting in 2019 November and lasting five months, and O3GK starting in 2020 April and lasting two weeks. In this paper we describe these data and various other science products that can be freely accessed through the Gravitational Wave Open Science Center at gwosc.org . The main data set, consisting of the gravitational-wave strain time series that contains the astrophysical signals, is released together with supporting data useful for their analysis and documentation, tutorials, as well as analysis software packages.
Publisher: Wiley
Date: 13-08-2014
DOI: 10.1111/COGS.12067
Publisher: American Physical Society (APS)
Date: 11-11-2021
Publisher: Royal Society of Chemistry (RSC)
Date: 2022
DOI: 10.1039/D1NR08088A
Abstract: Single vertical nanowire photodetectors from ordered InP nanowire arrays were fabricated by using the focused ion beam technique to directly investigate the light–matter interaction in nanowire arrays and its effect on photodetector performance.
Publisher: IEEE
Date: 09-2019
Publisher: IEEE
Date: 09-2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2013
Publisher: American Chemical Society (ACS)
Date: 18-07-2016
DOI: 10.1021/ACS.NANOLETT.6B01528
Abstract: Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend toward size reduction, higher component integration, and performance improvement for advanced THz-TDS systems is of increasing interest. The use of single semiconducting nanowires for terahertz (THz) detection is a nascent field that has great potential to realize future highly integrated THz systems. In order to develop such components, optimized material optoelectronic properties and careful device design are necessary. Here, we present antenna-optimized photoconductive detectors based on single InP nanowires with superior properties of high carrier mobility (∼1260 cm(2) V(-1) s(-1)) and low dark current (∼10 pA), which exhibit excellent sensitivity and broadband performance. We demonstrate that these nanowire THz detectors can provide high quality time-domain spectra for materials characterization in a THz-TDS system, a critical step toward future application in advanced THz-TDS system with high spectral and spatial resolution.
Publisher: SAGE Publications
Date: 07-2021
DOI: 10.1177/09727531211023753
Abstract: Hiccups is a known presentation of lateral medullary infarction. However, the region in the medulla associated with this finding is not clearly known. In this study, we aimed to study the neural correlates of hiccups in patients with lateral medullary infarction (LMI). This retrospective study included all patients who presented with lateral medullary infarction between January 2008 and May 2018. Patients with hiccups following LMI were identified as cases and those with no hiccups but who had LMI were taken as controls. The magnetic resonance imaging of the brain was done viewed and in idual lesions were mapped manually to the template brain. Voxel-based lesion-symptom mapping employing nonparametric permutation testing was performed using MRIcron. There were a total of 31 patients with LMI who presented to the hospital during the study period. There were 11 (35.5%) patients with hiccups. Using the voxel-based lesion-symptom mapping analysis, the dorso-lateral region of the middle medulla showed significant association with hiccups. In patients with LMI, we postulate that damage to the dorsolateral aspect on the middle medulla could result in hiccups.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2018
Publisher: Frontiers Media SA
Date: 08-02-2016
Publisher: Springer Science and Business Media LLC
Date: 22-03-2023
DOI: 10.1038/S41377-023-01127-0
Abstract: Narrowband red, green, blue self-filtering perovskite photodetectors and a broadband white photodetector are incorporated into a single pixel imaging camera to mimic the long-, medium-, and short-wavelength cone cells and rod cells in human visual system, leading to the demonstration of high-resolution color images in diffuse mode.
Publisher: FapUNIFESP (SciELO)
Date: 12-2013
Publisher: Elsevier BV
Date: 11-2015
Publisher: American Astronomical Society
Date: 29-06-2021
Abstract: We report the observation of gravitational waves from two compact binary coalescences in LIGO’s and Virgo’s third observing run with properties consistent with neutron star–black hole (NSBH) binaries. The two events are named GW200105_162426 and GW200115_042309, abbreviated as GW200105 and GW200115 the first was observed by LIGO Livingston and Virgo and the second by all three LIGO–Virgo detectors. The source of GW200105 has component masses 8 . 9 − 1 . 5 + 1. 2 and 1. 9 − 0. 2 + 0. 3 M ⊙ , whereas the source of GW200115 has component masses 5. 7 − 2 . 1 + 1. 8 and 1. 5 − 0. 3 + 0. 7 M ⊙ (all measurements quoted at the 90% credible level). The probability that the secondary’s mass is below the maximal mass of a neutron star is 89%–96% and 87%–98%, respectively, for GW200105 and GW200115, with the ranges arising from different astrophysical assumptions. The source luminosity distances are 280 − 110 + 110 and 300 − 100 + 150 Mpc , respectively. The magnitude of the primary spin of GW200105 is less than 0.23 at the 90% credible level, and its orientation is unconstrained. For GW200115, the primary spin has a negative spin projection onto the orbital angular momentum at 88% probability. We are unable to constrain the spin or tidal deformation of the secondary component for either event. We infer an NSBH merger rate density of 45 − 33 + 75 Gpc − 3 yr − 1 when assuming that GW200105 and GW200115 are representative of the NSBH population or 130 − 69 + 112 Gpc − 3 yr − 1 under the assumption of a broader distribution of component masses.
Publisher: American Chemical Society (ACS)
Date: 13-08-2019
Publisher: AIP Publishing
Date: 14-02-2022
DOI: 10.1063/5.0066507
Abstract: InAs nanowires have been considered as good candidates for infrared photodetection. However, one-dimensional geometry of a nanowire makes it unsuitable for broadband light absorption. In this work, we propose and design InAs nanosheet arrays to achieve polarization-independent, angle-insensitive, and ultrawide infrared absorption. Simulations demonstrate that two-dimensional InAs nanosheets can support multiple resonance modes, thus leading to a strong and broadband absorption from visible light to mid-wave infrared. Moreover, we can tune polarization-dependent property in InAs nanosheets to be polarization-insensitive by forming a nanosheet based clover-like and snowflake-like nanostructures. We further optimized the design of InAs nanosheet arrays based on such structures and achieved high absorption (up to 99.6%) covering a broad wavelength range from 500 to 3200 nm. These absorption properties are much superior to their nanowire and planar film counterparts, making it attractive for infrared photodetection applications. The architecture of such nanostructures can provide a promising route for the development of high-performance room-temperature broadband infrared photodetectors.
Publisher: American Astronomical Society
Date: 12-2022
Abstract: We present the results of a model-based search for continuous gravitational waves from the low-mass X-ray binary Scorpius X-1 using LIGO detector data from the third observing run of Advanced LIGO and Advanced Virgo. This is a semicoherent search that uses details of the signal model to coherently combine data separated by less than a specified coherence time, which can be adjusted to balance sensitivity with computing cost. The search covered a range of gravitational-wave frequencies from 25 to 1600 Hz, as well as ranges in orbital speed, frequency, and phase determined from observational constraints. No significant detection candidates were found, and upper limits were set as a function of frequency. The most stringent limits, between 100 and 200 Hz, correspond to an litude h 0 of about 10 −25 when marginalized isotropically over the unknown inclination angle of the neutron star’s rotation axis, or less than 4 × 10 −26 assuming the optimal orientation. The sensitivity of this search is now probing litudes predicted by models of torque balance equilibrium. For the usual conservative model assuming accretion at the surface of the neutron star, our isotropically marginalized upper limits are close to the predicted litude from about 70 to 100 Hz the limits assuming that the neutron star spin is aligned with the most likely orbital angular momentum are below the conservative torque balance predictions from 40 to 200 Hz. Assuming a broader range of accretion models, our direct limits on gravitational-wave litude delve into the relevant parameter space over a wide range of frequencies, to 500 Hz or more.
Publisher: Royal Society of Chemistry (RSC)
Date: 2023
DOI: 10.1039/D3NR00340J
Abstract: Wurtzite dominant InAs nanowire arrays with a low density of stacking faults were grown by using selective area metal–organic vapour-phase epitaxy, for the demonstration of high-performance short- and mid-wave infrared photodetector applications.
Publisher: IOP Publishing
Date: 27-03-2020
Publisher: American Physical Society (APS)
Date: 23-12-2021
Publisher: IOP Publishing
Date: 09-10-2015
DOI: 10.1088/0957-4484/26/44/445202
Abstract: Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm(2) V(-1) s(-1)). Under light illumination, single GaAs0.56Sb0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ∼1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08 × 10(9) (6.55 × 10(8)) cm√Hz/W were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs0.56Sb0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.
Publisher: Springer Science and Business Media LLC
Date: 04-11-2019
DOI: 10.1038/S41598-019-52432-X
Abstract: Plasmonic metamaterial absorbers are particularly important in different applications such as photodetectors, microbolometers and solar cells. In this paper, we propose a tungsten boride (WB, a refractory ceramic) based broadband metamaterial absorber whose optical properties is numerically analyzed and experimentally characterized. We have also analyzed the damage characteristics of this absorber using a femtosecond laser and compared with an ordinary Au metamaterial absorber. We observe that WB has almost the double absorption bandwidth with absorption more than 90% over the spectral range of 950 to 1400 nm when compared with the Au counterpart. Furthermore, we show that Au metamaterial is damaged at the power of around 36.4 mW whereas WB metamaterial is not damaged at that power (WB has high Tammann temperature than Au)-however the atom of WB material was knocked off by the bombardment of a femtosecond laser.
Publisher: Optica Publishing Group
Date: 30-10-2009
DOI: 10.1364/OE.17.020878
Publisher: IOP Publishing
Date: 29-06-2018
Publisher: IEEE
Date: 12-2014
Publisher: Wiley
Date: 30-08-2018
Abstract: The fundamental light-matter interactions in monolayer transition metal dichalcogenides might be significantly engineered by hybridization with their organic counterparts, enabling intriguing optoelectronic applications. Here, atomically thin organic-inorganic (O-I) heterostructures, comprising monolayer MoSe
Publisher: IOP Publishing
Date: 20-02-2017
Abstract: Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n
Publisher: American Astronomical Society
Date: 06-2023
Abstract: We use 47 gravitational wave sources from the Third LIGO–Virgo–Kamioka Gravitational Wave Detector Gravitational Wave Transient Catalog (GWTC–3) to estimate the Hubble parameter H ( z ), including its current value, the Hubble constant H 0 . Each gravitational wave (GW) signal provides the luminosity distance to the source, and we estimate the corresponding redshift using two methods: the redshifted masses and a galaxy catalog. Using the binary black hole (BBH) redshifted masses, we simultaneously infer the source mass distribution and H ( z ). The source mass distribution displays a peak around 34 M ⊙ , followed by a drop-off. Assuming this mass scale does not evolve with the redshift results in a H ( z ) measurement, yielding H 0 = 68 − 8 + 12 km s − 1 Mpc − 1 (68% credible interval) when combined with the H 0 measurement from GW170817 and its electromagnetic counterpart. This represents an improvement of 17% with respect to the H 0 estimate from GWTC–1. The second method associates each GW event with its probable host galaxy in the catalog GLADE+ , statistically marginalizing over the redshifts of each event’s potential hosts. Assuming a fixed BBH population, we estimate a value of H 0 = 68 − 6 + 8 km s − 1 Mpc − 1 with the galaxy catalog method, an improvement of 42% with respect to our GWTC–1 result and 20% with respect to recent H 0 studies using GWTC–2 events. However, we show that this result is strongly impacted by assumptions about the BBH source mass distribution the only event which is not strongly impacted by such assumptions (and is thus informative about H 0 ) is the well-localized event GW190814.
Publisher: American Physical Society (APS)
Date: 08-10-2021
Publisher: American Physical Society (APS)
Date: 21-09-2022
Publisher: The Optical Society
Date: 11-09-2019
Publisher: The Optical Society
Date: 07-2013
DOI: 10.1364/OE.21.016273
Publisher: Wiley
Date: 19-06-2015
DOI: 10.1002/AUR.1509
Publisher: American Chemical Society (ACS)
Date: 28-02-2019
Abstract: One-dimensional InAs nanowire (NW)-based photodetectors have been widely studied due to their potential application in mid-wavelength infrared (MWIR) photon detection. However, the limited performance and complicated photoresponse mechanism of InAs NW-based photodetectors have held back their true potential for real application. In this study, we developed ferroelectric polymer P(VDF-TrFE)-coated InAs NW-based photodetectors and demonstrated that the electrostatic field caused by polarized ferroelectric materials modifies the surface electron-hole distribution as well as the band structure of InAs NWs, resulting in ultrasensitive photoresponse and a wide photodetection spectral range. Our single InAs NW photodetectors exhibit a high responsivity ( R) of 1.6 × 10
Publisher: Optica Publishing Group
Date: 29-09-2021
DOI: 10.1364/OE.441003
Abstract: Random lasers, which rely on random scattering events unlike traditional Fabry-Pérot cavities, are much simpler and cost-effective to fabricate. However, because of the chaotic fluctuations and instability of the lasing modes, controlling the lasing properties is challenging. In this study, we use random InP nanowire (NW) arrays that operate in the Anderson localization regime with stable modes as the random lasers. We show that by changing the design parameters of the NW arrays, such as filling factor, dimensions of the NWs, degree of randomness, and the size of the array, the properties of the lasing modes including the number of modes, lasing wavelengths, and lasing threshold can be controlled.
Publisher: Wiley
Date: 04-04-2023
Abstract: In recent years, III–V semiconductor nanowires have been widely investigated for infrared photodetector applications due to their direct and suitable bandgap, unique optical and electrical properties, flexibility in device design and to create heterostructures, and/or grow on a foreign substrate such as Si with more effective strain relaxation compared with planar structures. In particular, vertically aligned and ordered nanowire arrays have emerged as a promising photodetector platform, since their geometry‐related light absorption and carrier transport properties can be tailored to achieve high photodetector performance and new functionalities. In this article, the state‐of‐the‐art progress in the development of various types of infrared photodetectors based on III–V semiconductor nanowire arrays is reviewed. The nanowire synthesis/fabrication methods are introduced briefly at first, followed by discussions on the working principle and device performance of various types of nanowire array‐based photodetectors and their emerging applications. Finally, we analyze the challenges and present the perspectives for the development of future low‐cost, large‐scale, high‐performance nanowire array infrared photodetectors for practical applications.
Publisher: MDPI AG
Date: 19-03-2020
DOI: 10.3390/MA13061400
Abstract: Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.
Publisher: IOP Publishing
Date: 13-07-2012
DOI: 10.1088/0022-3727/45/30/305102
Abstract: In this paper, a staircase plasmonic nano-antenna device is analysed both theoretically and experimentally. The tapered nano-antenna cavity with a grating leads to electric field enhancement factor (EF) as high as 31 close to 830 nm. The integration of a metallic grating aids the coupling of light coming from the vertical direction to the nano-antenna, increasing the electric field in the nano-antenna by a factor of 3. The smallest air gap width between the metallic regions of the fabricated nano-antenna is about 35 nm, fabricated using focused ion beam system. The small air gaps in the nano-antennas can generate very high intensity electric fields which can be used in applications in biological sensing and imaging, nanoparticle manipulations and enhancement of nonlinear effects. In this paper, to experimentally demonstrate that with the integration of a well designed grating and reflectors, the resonance inside the nano-antenna cavity is increased significantly, we exploit one application of this device: the enhancement of surface enhanced Raman scattering (SERS). The present structure can lead to SERS EFs above 1 million.
Publisher: American Physical Society (APS)
Date: 09-08-2022
Publisher: American Chemical Society (ACS)
Date: 10-05-2021
Publisher: Wiley
Date: 05-11-2018
DOI: 10.1002/PIP.3083
Publisher: Elsevier BV
Date: 05-2020
Publisher: American Chemical Society (ACS)
Date: 16-10-2018
Publisher: The Optical Society
Date: 02-2013
DOI: 10.1364/AO.52.000854
Publisher: American Chemical Society (ACS)
Date: 05-11-2019
Abstract: Generating single photons at high temperature remains a major challenge, particularly for group III-As and III-P materials widely used in optical communication. Here, we report a high temperature single photon emitter based on a "surface-free" GaAs quantum dot (QD) in a GaAsP nanowire. By using self-catalyzed vapor-liquid-solid growth and simple surface engineering, we can significantly enhance the optical signal from the QDs with a highly polarized photoluminescence at 750 nm. The "surface-free" nanowire quantum dots show photon antibunching up to 160 K and well resolved exciton lines as high as 220 K.
Publisher: Springer Science and Business Media LLC
Date: 04-06-2021
Publisher: Springer Science and Business Media LLC
Date: 10-09-2019
DOI: 10.1038/S41598-019-49517-Y
Abstract: Nano-antennas are replicas of antennas that operate at radio-frequencies, but with considerably smaller dimensions when compared with their radio frequency counterparts. Noble metals based nano-antennas have the ability to enhance photoinduced phenomena such as localized electric fields, therefore-they have been used in various applications ranging from optical sensing and imaging to performance improvement of solar cells. However, such nano-structures can be damaged in high power applications such as heat resisted magnetic recording, solar thermo-photovoltaics and nano-scale heat transfer systems. Having a small footprint, nano-antennas cannot handle high fluences (energy density per unit area) and are subject to being damaged at adequately high power (some antennas can handle just a few milliwatts). In addition, given that nano-antennas are passive devices driven by external light sources, the potential damage of the antennas limits their use with high power lasers: this liability can be overcome by employing materials with high melting points such as chromium (Cr) and tungsten (W). In this article, we fabricate chromium and tungsten nano-antennas and demonstrate that they can handle 110 and 300 times higher fluence than that of gold (Au) counterpart, while the electric field enhancement is not significantly reduced.
Publisher: American Physical Society (APS)
Date: 19-01-2022
Publisher: American Physical Society (APS)
Date: 23-07-2021
Publisher: American Physical Society (APS)
Date: 27-07-2021
Publisher: American Physical Society (APS)
Date: 09-05-2022
Publisher: American Chemical Society (ACS)
Date: 16-07-2020
Publisher: American Physical Society (APS)
Date: 28-11-2022
Publisher: OSA
Date: 2013
Publisher: IEEE
Date: 09-2018
Publisher: IEEE
Date: 08-2013
Publisher: Elsevier BV
Date: 04-2018
Publisher: IEEE
Date: 08-2013
Publisher: American Chemical Society (ACS)
Date: 29-05-2019
DOI: 10.1021/ACS.NANOLETT.9B00959
Abstract: We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of high-performance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.
Publisher: IEEE
Date: 12-2010
Publisher: Wiley
Date: 22-09-2020
Publisher: OSA
Date: 2017
Publisher: IEEE
Date: 06-2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2011
Publisher: American Physical Society (APS)
Date: 05-08-2022
Publisher: The Electromagnetics Academy
Date: 2011
Publisher: American Chemical Society (ACS)
Date: 11-2018
Abstract: Developing a high-efficiency and low-cost light source with emission wavelength transparent to silicon is an essential step toward silicon-based nanophotonic devices and micro/nano industry platforms. Here, a near-infrared monolayer MoTe
Publisher: American Psychological Association (APA)
Date: 2010
DOI: 10.1037/A0017608
Publisher: American Chemical Society (ACS)
Date: 03-10-2018
Abstract: III-V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In particular, the three-dimensional growth mechanism of MQWs embedded in a NW structure by SAE is expected to be different from that of those grown in a planar structure or with a catalyst and has not yet been thoroughly investigated. In this work, we reveal a distinctive radial growth evolution of InGaAs/InP MQW NWs grown by the SAE metal organic vapor-phase epitaxy (MOVPE) technique. We observe the formation of zinc blende (ZB) QW discs induced by the axial InGaAs QW growth on the wurtzite (WZ) base-InP NW and propose it as the key factor driving the overall structure of radial growth. The role of the ZB-to-WZ change in the driving of the overall growth evolution is supported by a growth formalism, taking into account the formation-energy difference between different facets. Despite a polytypic crystal structure with mixed ZB and WZ phases across the MQW region, the NWs exhibit high uniformity and desirable QW spatial layout with bright room-temperature photoluminescence at an optical communication wavelength of ∼1.3 μm, which is promising for the future development of high-efficiency light-emitting devices.
Publisher: IEEE
Date: 09-2018
Publisher: OSA
Date: 2017
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9NR01213C
Abstract: Superior passivation of GaInP shell and the revealed carrier dynamics in WZ polytype GaAs nanowires.
Start Date: 01-2019
End Date: 12-2022
Amount: $384,000.00
Funder: Australian Research Council
View Funded Activity