ORCID Profile
0000-0001-6659-9771
Current Organisations
University of Nottingham Ningbo China
,
American Chemical Society
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Publisher: American Chemical Society (ACS)
Date: 23-10-2020
Publisher: Elsevier BV
Date: 08-2021
Publisher: Elsevier BV
Date: 08-2020
Publisher: Elsevier BV
Date: 10-2023
Publisher: Elsevier BV
Date: 11-2019
Publisher: Elsevier BV
Date: 33
Publisher: Wiley
Date: 10-04-2019
Publisher: AIP Publishing
Date: 18-02-2019
DOI: 10.1063/1.5066423
Abstract: Passivating metal/silicon contacts combine low carrier recombination with low contact resistivities, enabled by a low gap state density at their interface. Such contacts find applications in high-efficiency solar cells. We perform first-principles calculations based on density functional theory to investigate the surface defect and metal-induced gap state density of silicon in close contact with metals (Al and Ag). We confirm that surface hydrogenation fully removes surface-defect gap states of (111)-oriented silicon surfaces. However, the metal-induced gap state density increases significantly when metals are closer than 0.5 nm to such surfaces. These results highlight the importance of the tunneling-film thickness in achieving effective passivating-contact formation.
Location: Saudi Arabia
No related grants have been discovered for Muhammad Sajjad.