ORCID Profile
0000-0002-3823-0042
Current Organisation
Georgia Institute of Technology
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Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2017
Publisher: American Institute of Mathematical Sciences (AIMS)
Date: 2016
Publisher: Wiley
Date: 31-07-2014
DOI: 10.1002/PIP.2545
Publisher: Wiley
Date: 21-07-2011
DOI: 10.1002/PIP.1135
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 02-2022
Publisher: Elsevier BV
Date: 10-2011
Publisher: AIP Publishing
Date: 09-01-2017
DOI: 10.1063/1.4973626
Abstract: Front metal contact induced recombination and resistance are major efficiency limiting factors of large-area screen-printed n-type front junction Si solar cells with homogeneous emitter and tunnel oxide passivated back contact (TOPCON). This paper shows the development of a selective boron emitter (p+ ++) formed by a screen-printed resist masking and wet chemical etch-back process, which first grows a porous Si layer and subsequently removes it. Various wet-chemical solutions for forming porous Si layer are investigated. An industrial compatible process with sodium nitrite (NaNO2) catalyst is developed to uniformly etch-back the ∼47 Ω/◻ atmospheric pressure chemical vapor deposited heavily doped boron emitter to ∼135 Ω/◻ by growing a 320 nm porous Si layer within 3 min and subsequently removing it. After etching back, the boron emitter was subjected to a thermal oxidation to lower the surface concentration and the emitter saturation current density J0e. Various etched-back emitters were evaluated by measuring J0e on symmetric test structures with atomic layer deposited aluminum oxide (Al2O3) passivation. Very low J0e of 21, 14, and 9 fA/cm2 were obtained for the 120, 150, and 180 Ω/◻ etched-back emitters, respectively. A solar cell with a selective emitter (65/180 Ω/◻) formed by this etch-back technology and with an Al/Ag contact on the front and TOPCON on the back gave an open-circuit voltage (Voc) of 682.8 mV and efficiency of 21.04% on n-type Czochralski Si wafer. This demonstrates the potential of this technology for next generation high-efficiency industrial n-type Si solar cells.
Publisher: Elsevier BV
Date: 06-2012
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2014
Publisher: Elsevier BV
Date: 04-2014
Publisher: Wiley
Date: 04-10-2017
DOI: 10.1002/PIP.2809
Publisher: Wiley
Date: 21-01-2016
DOI: 10.1002/PIP.2739
Publisher: Springer Science and Business Media LLC
Date: 16-08-2022
DOI: 10.1038/S41598-022-18280-Y
Abstract: Silicon photomultipliers have attracted increasing attention for detecting low-density light in both scientific research and practical applications in recent years yet the photon losses due to reflection on the light-sensitive planar silicon surface considerably limit its photon detection efficiency. Here we demonstrate an advanced light trapping feature by developing the multi-layer antireflection coatings and the textured silicon surface with upright random nano-micro pyramids, which significantly reduces the reflection of faint light in a wide spectrum, from ultraviolet to infrared. Integrating this advanced photon confinement feature into next-generation back-illuminated silicon photomultiplier would increase the photon detection efficiency with significantly lower reflection and much more active areas. This advanced design feature offers the back-illuminated silicon photomultiplier broader application opportunities exemplified in the emerging scenarios such as nuclear medical imaging, light detection and ranging for autonomous driving, detection of scintillation light in ionizing radiation, as well as high energy physics.
No related grants have been discovered for Yuguo Tao.