ORCID Profile
0000-0002-8877-8372
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Publisher: Wiley
Date: 27-07-2021
Abstract: Herein, a comparison of industrial silicon heterojunction (SHJ) solar cells formed using p‐type (boron‐ or gallium‐doped) Czochralski‐grown silicon (Cz‐Si) wafers is provided. Standard n‐type SHJ solar cells are also fabricated as a reference. Boron‐doped SHJ solar cells are heavily susceptible to boron–oxygen light‐induced degradation (BO‐LID), with an open‐circuit voltage ( V OC ) reduction of 100 mV in some cells with starting V OC of mV. While an advanced hydrogenation process (AHP) is sufficient to completely stabilize BO‐LID in some cells, resulting in stable V OC of 724 mV, the impact in reducing BO‐LID is variable. This suggests that an AHP alone may not be a reliable method of reducing BO‐LID in industrial SHJ solar cells. In contrast, SHJ solar cells formed using gallium‐doped wafers exhibit V OC 730 mV and show no degradation during light‐soaking. Yet, the same AHP treatment for gallium‐doped SHJ cells results in a 0.4% abs increase in the conversion efficiency to 22.6% ( V OC of 734 mV). The conversion efficiency of the gallium‐doped SHJ solar cells is still lower than the n‐type reference cells, which is largely due to a reduced fill factor (FF). Further work is required to overcome this FF limitation to facilitate high‐efficiency gallium‐doped SHJ solar cells.
Publisher: Elsevier BV
Date: 12-2022
Publisher: Wiley
Date: 07-08-2022
Abstract: The first reports of both boron–oxygen (BO)‐related light‐induced degradation (BO‐LID) and amorphous/crystalline silicon heterojunction (SHJ) solar cell fabrication date back to the early 1970s. However, the complete development of the “modern” SHJ structure took place well before BO defect stabilization processes were developed. Due to the susceptibility of p‐type Czochralski (Cz)‐grown silicon to BO‐LID, such wafers were deemed unsuitable for SHJ solar cells. In addition to stability issues, lower charge carrier lifetimes due to contamination and challenges with surface passivation posed barriers to the adoption of p‐type wafers in SHJ applications. Herein, these three key challenges are discussed in detail. Kinetic modeling and experimental results reveal the severe impact of BO‐LID in p‐type SHJ solar cells and provide possible explanations as to why earlier attempts using p‐type wafers might have failed. The role of gettering and advanced hydrogenation in stabilizing BO defects in SHJ solar cells is demonstrated experimentally. Finally, a summary of the effective surface recombination velocities reported in the literature for hydrogenated intrinsic amorphous silicon passivation of p‐ and n‐type crystalline silicon wafers is presented. Based on these findings, the potential of p‐type wafers to enable a next‐generation of high‐efficiency solar cells featuring carrier‐selective contacts is discussed.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2022
Location: Russian Federation
No related grants have been discovered for Sergey Abolmasov.