ORCID Profile
0000-0001-5917-5057
Current Organisation
University of Shanghai for Science and Technology
Does something not look right? The information on this page has been harvested from data sources that may not be up to date. We continue to work with information providers to improve coverage and quality. To report an issue, use the Feedback Form.
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Functional Materials | Condensed Matter Physics | Nanomaterials | Materials Engineering | Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Nanoscale Characterisation | Condensed Matter Modelling and Density Functional Theory | Condensed Matter Characterisation Technique Development |
Expanding Knowledge in the Physical Sciences | Renewable Energy not elsewhere classified | Solar-Thermal Energy | Expanding Knowledge in Engineering | Expanding Knowledge in Technology
Publisher: American Physical Society (APS)
Date: 23-04-2019
Publisher: American Physical Society (APS)
Date: 15-11-2012
Publisher: Elsevier BV
Date: 2021
Publisher: American Physical Society (APS)
Date: 10-04-2015
Publisher: American Chemical Society (ACS)
Date: 26-02-2020
Publisher: Elsevier BV
Date: 12-2018
Publisher: IOP Publishing
Date: 07-2016
DOI: 10.1088/0953-8984/28/35/355801
Abstract: Topological Kondo insulator SmB6 has attracted quite a lot of attention from the condensed matter physics community. A number of unique electronic properties, including low-temperature resistivity anomaly, 1D electronic transport and 2D Fermi surfaces have been observed in SmB6. Here, we report on thermoelectric transport properties of polycrystalline SmB6 over a broad temperature from 300 to 2 K. An anomalous transition in the temperature-dependent Seebeck coefficient S from S(T) [Formula: see text] T (-1) to S(T) [Formula: see text] T was observed around 12 K. Such a transition demonstrates a transition of conductivity from 3D metallic bulk states to 2D metallic surface states with insulating bulk states. Our results suggest that the thermotransport measurements could be used for the characterization of state transition in topological insulators.
Publisher: IEEE
Date: 07-2017
Publisher: Wiley
Date: 11-06-2020
Publisher: AIP Publishing
Date: 08-10-2012
DOI: 10.1063/1.4756941
Abstract: Angular-dependences of in-plane and interlayer magnetotransport properties in n-type Bi2Te3 bulk single crystals have been investigated over a broad range of temperatures and magnetic fields. Giant in-plane magnetoresistances (MR) of up to 500% and interlayer MR of up to 200% were observed, respectively. The observed MR exhibits quadratic field dependences in low fields and linear field dependences in high fields. The angular dependences of the MR represent strong anisotropy and twofold oscillations. The observed angle-dependent, giant MR might result from the strong coulomb scattering of electrons as well as impurity scattering in the bulk conduction bands of n-type Bi2Te3. The strong anisotropy of the MR may be attributable to the anisotropy of electron mobility, effective mass, and relaxation time in the Fermi surface. The observed giant anisotropic MR in n-type Bi2Te3 bulk single crystals paves the way for Bi2Te3 single crystals to be useful for practical applications in magnetoelectronic devices such as disk reading heads, anisotropic magnetic sensors, and other multifunctional electromagnetic applications.
Publisher: IOP Publishing
Date: 10-2012
Publisher: Springer Science and Business Media LLC
Date: 24-10-2018
DOI: 10.1038/S41467-018-06952-1
Abstract: Complementary metal–oxide–semiconductor (CMOS) technology has provided a highly sensitive detection platform for high-resolution optical imaging, sensing and metrology. Although the detection of optical beams carrying angular momentum have been explored with nanophotonic methods, the metrology of optical angular momentum has been limited to bulk optics. We demonstrate angular-momentum nanometrology through the spatial displacement engineering of plasmonic angular momentum modes in a CMOS-compatible plasmonic topological insulator material. The generation and propagation of surface plasmon polaritons on the surface of an ultrathin topological insulator Sb 2 Te 3 film with a thickness of 100 nm is confirmed, exhibiting plasmonic figures of merit superior to noble metal plasmonics in the ultraviolet-visible frequency range. Angular-momentum nanometrology with a low crosstalk of less than −20 dB is achieved. This compact high-precision angular-momentum nanometrology opens an unprecedented opportunity for on-chip manipulation of optical angular momentum for high-capacity information processing, ultrasensitive molecular sensing, and ultracompact multi-functional optoelectronic devices.
Publisher: Royal Society of Chemistry (RSC)
Date: 2013
DOI: 10.1039/C3NR00550J
Abstract: We report on the comparative study of magnetotransport properties of large-area vertical few-layer graphene networks with different morphologies, measured in a strong (up to 10 T) magnetic field over a wide temperature range. The petal-like and tree-like graphene networks grown by a plasma enhanced CVD process on a thin (500 nm) silicon oxide layer supported by a silicon wafer demonstrate a significant difference in the resistance-magnetic field dependencies at temperatures ranging from 2 to 200 K. This behaviour is explained in terms of the effect of electron scattering at ultra-long reactive edges and ultra-dense boundaries of the graphene nanowalls. Our results pave a way towards three-dimensional vertical graphene-based magnetoelectronic nanodevices with morphology-tuneable anisotropic magnetic properties.
Publisher: Royal Society of Chemistry (RSC)
Date: 2021
DOI: 10.1039/D1TC02065J
Abstract: A novel ferromagnetic spinel CuCo 2 S 4 T c ∼ 125 K was discovered. The ferromagnetism originates from Co and Cu atoms, and leads to a positive magnetoresistance in the paramagnetic regime, and a cross-over in the ferromagnetic regime.
Publisher: Elsevier BV
Date: 07-2021
Publisher: AIP Publishing
Date: 03-03-2014
DOI: 10.1063/1.4867891
Publisher: Physical Society of Japan
Date: 15-04-2015
Publisher: Informa UK Limited
Date: 2012
Publisher: Wiley
Date: 23-04-2015
Publisher: American Association for the Advancement of Science (AAAS)
Date: 04-03-2016
Abstract: A new type of plasmonic nanostructures with topologically protected metallic shells and high–refractive index dielectric cores.
Publisher: Elsevier BV
Date: 03-2019
Publisher: American Chemical Society (ACS)
Date: 27-08-2019
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C8NR09227C
Abstract: The visible-range SPR on an Sb 2 Te 3 topological insulator film is experimentally demonstrated and applied for the dynamic monitoring of refractive index variation.
Publisher: Springer Science and Business Media LLC
Date: 12-11-2019
DOI: 10.1038/S41535-019-0195-7
Abstract: As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches have been proposed to construct electronic devices with low-energy consumption. Among these, the low-dissipation surface states of topological insulators (TIs) are widely employed. To develop TI-based devices, a key factor is the maximum temperature at which the Dirac surface states dominate the transport behavior. Here, we employ Shubnikov-de Haas oscillations (SdH) as a means to study the surface state survival temperature in a high-quality vanadium doped Bi 1.08 Sn 0.02 Sb 0.9 Te 2 S single crystal system. The temperature and angle dependence of the SdH show that: (1) crystals with different vanadium (V) doping levels are insulating in the 3–300 K region (2) the SdH oscillations show two-dimensional behavior, indicating that the oscillations arise from the pure surface states and (3) at 50 K, the V 0.04 single crystals (V x :Bi 1.08- x Sn 0.02 Sb 0.9 Te 2 S, where x = 0.04) still show clear sign of SdH oscillations, which demonstrate that the surface dominant transport behavior can survive above 50 K. The robust surface states in our V doped single crystal systems provide an ideal platform to study the Dirac fermions and their interaction with other materials above 50 K.
Publisher: AIP Publishing
Date: 04-2019
DOI: 10.1063/1.5088033
Abstract: Topological insulators as relatively new quantum materials with the topologically protected conducting Dirac surface state reveal fantastic electronic and photonic characteristics. The photonic behaviors of topological insulators are particularly significant for exploring their optical phenomena and functional devices. Here, we present the generation of Tamm plasmon polaritons (TPPs) in a topological insulator multilayer structure consisting of a Bi1.5Sb0.5Te1.8Se1.2 (BSTS) nanofilm and a one-dimensional photonic crystal (PC). The results illustrate that the TPP electric field can locally concentrate between the BSTS nanofilm and PC, contributing to the improved light-BSTS interaction with a 3-fold enhancement of light absorption. It is also found that the near-infrared TPP response can be dynamically tailored by adjusting the PC layer thickness, BSTS nanofilm thickness, and angle of incident light. The theoretical calculations are in excellent agreement with the numerical simulations. Additionally, the TPP field intensity and light-topological insulator interaction are capable of being further reinforced by introducing a dielectric spacer between the BSTS nanofilm and PC. Our results will enrich the optical characteristics and application potential of topological insulators.
Publisher: Royal Society of Chemistry (RSC)
Date: 2013
DOI: 10.1039/C3CC46218H
Publisher: AIP Publishing
Date: 11-05-2020
DOI: 10.1063/5.0006447
Abstract: The surfaces of Sb2Te3 topological insulator crystals were implanted using a 40 keV chromium ion beam. To facilitate uniform doping, the Sb2Te3 was passivated with a thin TiO2 film before the implantation step. The resulting chemical structure was studied using atomic-resolution transmission electron microscopy. A fluence of 7 × 1015 ions/cm2 at 40 keV lead to amorphization of the Sb2Te3 surface, with chromium predominantly incorporated in the amorphous layer. Heating to 200 °C caused the amorphous region to recrystallize and led to the formation of a thin chromium-rich interfacial layer. Near-edge x-ray absorption spectroscopy indicates a uniform valence state of Cr3+ throughout, with no evidence of metallic clustering. High-temperature superparamagnetic behavior was detected up to 300 K, with an increased magnetic moment below 50 K.
Publisher: American Chemical Society (ACS)
Date: 04-2022
DOI: 10.1021/ACS.JPCLETT.2C00297
Abstract: An analytical model describing the vibrational density of states (VDOS) of liquids has long been elusive, owing to the complexities of liquid dynamics. Nevertheless, Zaccone and Baggioli have recently developed such a model which was proposed to be the universal law for the vibrational density of states of liquids. Distinct from the Debye law,
Publisher: American Chemical Society (ACS)
Date: 10-07-2019
DOI: 10.1021/ACS.NANOLETT.9B01123
Abstract: In the 1960s, it was proposed that in small indirect band-gap materials, excitons can spontaneously form because the density of carriers is too low to screen the attractive Coulomb interaction between electrons and holes. The result is a novel strongly interacting insulating phase known as an excitonic insulator. Here we employ scanning tunnelling microscopy (STM) and spectroscopy (STS) to show that the enhanced Coulomb interaction in quantum-confined elemental Sb nanoflakes drives the system to the excitonic insulator state. The unique feature of the excitonic insulator, a charge density wave (CDW) without periodic lattice distortion, is directly observed. Furthermore, STS shows a gap induced by the CDW near the Fermi surface. Our observations suggest that the Sb(110) nanoflake is an excitonic insulator.
Publisher: Springer Science and Business Media LLC
Date: 27-03-2023
DOI: 10.1038/S41467-023-37102-X
Abstract: The conducting boundary states of topological insulators appear at an interface where the characteristic invariant ℤ 2 switches from 1 to 0. These states offer prospects for quantum electronics however, a method is needed to spatially-control ℤ 2 to pattern conducting channels. It is shown that modifying Sb 2 Te 3 single-crystal surfaces with an ion beam switches the topological insulator into an amorphous state exhibiting negligible bulk and surface conductivity. This is attributed to a transition from ℤ 2 = 1 → ℤ 2 = 0 at a threshold disorder strength. This observation is supported by density functional theory and model Hamiltonian calculations. Here we show that this ion-beam treatment allows for inverse lithography to pattern arrays of topological surfaces, edges and corners which are the building blocks of topological electronics.
Start Date: 10-2022
End Date: 10-2025
Amount: $400,551.00
Funder: Australian Research Council
View Funded ActivityStart Date: 2022
End Date: 06-2023
Amount: $521,816.00
Funder: Australian Research Council
View Funded ActivityStart Date: 07-2021
End Date: 06-2024
Amount: $315,000.00
Funder: Australian Research Council
View Funded Activity