ORCID Profile
0000-0003-2855-3582
Current Organisation
UNSW Australia
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Condensed Matter Physics—Electronic And Magnetic Properties; | Nanotechnology | Nanotechnology | Mathematical Physics | Theoretical Physics | Nanoelectronics | Condensed Matter Physics | Polymers | Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Condensed Matter Physics—Structural Properties | Medical and biological physics | Physical Chemistry of Materials | Colloid And Surface Chemistry | Macromolecular and Materials Chemistry | Chemical Sciences Not Elsewhere Classified | Biotechnology Not Elsewhere Classified | Quantum Physics not elsewhere classified | Biological Physics | Biological physics | Nanomaterials | Functional Materials | Interdisciplinary Engineering Not Elsewhere Classified | Materials Engineering | Materials Engineering Not Elsewhere Classified | Quantum Information, Computation and Communication | Soft Condensed Matter | Photonics, Optoelectronics and Optical Communications | Molecular and Organic Electronics | Nanobiotechnology | Nanofabrication, Growth and Self Assembly
ANZSRC Socio-Economic Objective (SEO)
Integrated circuits and devices | Physical sciences | Expanding Knowledge in Technology | Expanding Knowledge in the Physical Sciences | Plastic products (incl. Construction materials) | Expanding Knowledge in Engineering | Chemical sciences | Other | Polymeric materials (e.g. paints) | Diagnostic Methods | Integrated Circuits and Devices | Communication equipment not elsewhere classified |
Related Links
Publications
Crystallographic anisotropy of the Zeeman splitting in 1D hole quantum wires
Publisher: Elsevier BV
Date: 02-2010
An improved process for fabricating high-mobility organic molecular crystal field-effect transistors
Publisher: AIP Publishing
Date: 15-10-2007
DOI: 10.1063/1.2802284
Abstract: In this paper we present an improved process for producing elastomer transistor st s and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to use a silanized Si wafer for curing the st s and to handle a fragile micron thickness polydimethylsiloxane (PDMS) insulating film and laminate it, bubble-free, against the PDMS transistor st . We find that despite the altered design, rougher PDMS surface, and lamination and measurement of the device in air, we still achieve electrical mobilities of the order of 10cm2∕Vs, comparable to the current state of the art in organic FETs. Our device shows hole conduction with a threshold voltage of the order of −9V, which corresponds to a trap density of 1.4×1010cm−2.
AlGaAs/GaAs single electron transistor fabricated without modulation doping
Publisher: AIP Publishing
Date: 15-03-0011
DOI: 10.1063/1.3358388
Abstract: We have fabricated a quantum dot single electron transistor, based on AlGaAs/GaAs heterojunction without modulation doping, which exhibits clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak line shape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract the charging energy, and showed clear evidence of excited state transport, confirming that in idual quantum states in the dot can be resolved.
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Publisher: Wiley
Date: 25-07-2013
Dependence of fractal conductance fluctuations on soft-wall profile in a double-layer semiconductor billiard
Publisher: AIP Publishing
Date: 31-05-2002
DOI: 10.1063/1.1485103
Abstract: We present a semiconductor system featuring two billiards located one on top of the other. We use this system to study the dependence of fractal conductance fluctuations on soft-wall potential profile and show the fluctuations to be surprisingly robust to changes in profile.
Fabrication of induced two-dimensional hole systems on (311)A GaAs
Publisher: AIP Publishing
Date: 15-01-2006
DOI: 10.1063/1.2163998
Abstract: We demonstrate a method for fabricating induced two-dimensional hole devices in (311)A GaAs. The method uses a metallic p+-GaAs capping layer as an in situ top gate that pins the Fermi energy close to the valence band, thereby allowing very small gate biases to be used to induce a two-dimensional hole system at a AlGaAs∕GaAs interface. We present transport data from devices with different levels of background impurities. Modeling the mobility as a function of hole density gives a quantitative measure of the level of disorder and indicates that these systems can be used for a systematic study of the effects of disorder in strongly interacting low-dimensional systems.
The Effect of Direct Electron Beam Patterning on the Water Uptake and Ionic Conductivity of Nafion Thin Films
Publisher: Wiley
Date: 15-06-2023
Abstract: The effect of electron‐beam patterning on the water uptake and ionic conductivity of Nafion films using a combination of X‐ray photoelectron spectroscopy, quartz crystal microbalance studies, neutron reflectometry, and impedance spectroscopy is reported. The aim is to further characterize the nanoscale patterned Nafion structures recently used as a key element in novel ion‐to‐electron transducers by Gluschke et al. To enable this, the electron beam patterning process is developed for large areas, achieving patterning speeds approaching 1 cm 2 h −1 , and patterned areas as large as 7 cm 2 for the neutron reflectometry studies. It is ultimately shown that electron‐beam patterning affects both the water uptake and the ionic conductivity, depending on film thickness. Type‐II adsorption isotherm behavior is seen for all films. For thick films (≈230 nm), a strong reduction in water uptake with electron‐beam patterning is found. In contrast, for thin films (≈30 nm), electron‐beam patterning enhances water uptake. Notably, for either thickness, the reduction in ionic conductivity arising from electron‐beam patterning is kept to less than an order of magnitude. Mechanisms are proposed for the observed behavior based on the known complex morphology of Nafion films to motivate future studies of electron‐beam processed Nafion.
Screening long-range Coulomb interactions in 2D hole systems using a bilayer heterostructure
Publisher: Elsevier BV
Date: 03-2008
Stability of the bilayer ν=1 quantum Hall state under charge imbalance
Publisher: Elsevier BV
Date: 04-2004
Multi-Redox Responsive Behavior in a Mixed-Valence Semiconducting Framework Based on Bis-[1,2,5]-thiadiazolo-tetracyanoquinodimethane
Publisher: American Chemical Society (ACS)
Date: 13-07-2022
DOI: 10.1021/JACS.2C03794
Abstract: The two-dimensional (2-D) framework, [Cu(BTDAT)(MeOH)] {BTDAT = bis-[1,2,5]-thiadiazolo-tetracyanoquinodimethane}, possesses remarkable multi-step redox properties, with electrochemical studies revealing six quasi-stable redox states in the solid state. In situ electron paramagnetic resonance and visible-near infrared spectroelectrochemistry elucidated the mechanism for these multi-step redox processes, as well as the optical and electrochromic behavior of the BTDAT ligand and framework. In studying the structural, spectroscopic, and electronic properties of [Cu(BTDAT)(MeOH)], the as-synthesized framework was found to exist in a mixed-valence state with thermally-activated semiconducting behavior. In addition to pressed pellet conductivity measurements, single-crystal conductivity measurements using a pre-patterned polydimethylsiloxane layer on a silicon substrate provide important insights into the anisotropic conduction pathways. As an avenue to further understand the electronic state of [Cu(BTDAT)(MeOH)], computational band structure calculations predicted delocalized electronic transport in the framework. On the balance of probabilities, we propose that [Cu(BTDAT)(MeOH)] is a Mott insulator (i.e., electron correlations cause a metal-insulator transition). This implies that the conductivity is incoherent. However, we are unable to distinguish between activated transport due to Coulombically bound electron-hole pairs and a hopping mechanism. The combined electrochemical, electronic, and optical properties of [Cu(BTDAT)(MeOH)] shine a new light on the experimental and theoretical challenges for electroactive framework materials, which are implicated as the basis of advanced optoelectronic and electrochromic devices.
Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts
Publisher: AIP Publishing
Date: 04-05-2015
DOI: 10.1063/1.4918934
Abstract: We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility Al0.34Ga0.66As/GaAs heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses.
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
Publisher: IOP Publishing
Date: 14-12-2018
Abstract: We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300, 200, and 150 nm gate length. Our method enables us to achieve subthreshold swings as low as 38 mV dec
Fractal analysis of Pollock's drip paintings
Publisher: Springer Science and Business Media LLC
Date: 06-1999
DOI: 10.1038/20833
Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors
Publisher: American Chemical Society (ACS)
Date: 20-06-2018
DOI: 10.1021/ACS.NANOLETT.8B01519
Abstract: We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 10
Enhanced Zeeman splitting in Ga0.25 In0.75 As quantum point contacts
Publisher: AIP Publishing
Date: 07-07-2008
DOI: 10.1063/1.2957033
Abstract: The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Landé g-factor from |g∗|=3.8±0.2 for the third subband to |g∗|=5.8±0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures.
Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors
Publisher: American Chemical Society (ACS)
Date: 09-10-2019
Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another
Publisher: American Physical Society (APS)
Date: 05-10-2009
Extreme Sensitivity of the Spin-Splitting and 0.7 Anomaly to Confining Potential in One-Dimensional Nanoelectronic Devices
Publisher: American Chemical Society (ACS)
Date: 08-2012
DOI: 10.1021/NL301566D
Abstract: Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 × 2e(2)/h anomaly. We report on the dependence of the 1D Landé g-factor g and 0.7 anomaly on electron density and confinement in QPCs with two different top-gate architectures. We obtain g values up to 2.8 for the lowest 1D subband, significantly exceeding previous in-plane g-factor values in AlGaAs/GaAs QPCs and approaching that in InGaAs/InP QPCs. We show that g is highly sensitive to confinement potential, particularly for the lowest 1D subband. This suggests careful management of the QPC's confinement potential may enable the high g desirable for spintronic applications without resorting to narrow-gap materials such as InAs or InSb. The 0.7 anomaly and zero-bias peak are also highly sensitive to confining potential, explaining the conflicting density dependencies of the 0.7 anomaly in the literature.
Prospects for single-molecule electrostatic detection in molecular motor gliding motility assays
Publisher: IOP Publishing
Date: 06-2021
Abstract: Molecular motor gliding motility assays based on myosin/actin or kinesin/microtubules are of interest for nanotechnology applications ranging from cargo-trafficking in lab-on-a-chip devices to novel biocomputation strategies. Prototype systems are typically monitored by expensive and bulky fluorescence microscopy systems. The development of integrated, direct electric detection of single filaments would strongly benefit applications and scale-up. We present estimates for the viability of such a detector by calculating the electrostatic potential change generated at a carbon nanotube transistor by a motile actin filament or microtubule under realistic gliding assay conditions. We combine this with detection limits based on previous state-of-the-art experiments using carbon nanotube transistors to detect catalysis by a bound lysozyme molecule and melting of a bound short-strand DNA molecule. Our results show that detection should be possible for both actin and microtubules using existing low ionic strength buffers given good device design, e.g., by raising the transistor slightly above the guiding channel floor. We perform studies as a function of buffer ionic strength, height of the transistor above the guiding channel floor, presence/absence of the casein surface passivation layer for microtubule assays and the linear charge density of the actin filaments/microtubules. We show that detection of microtubules is a more likely prospect given their smaller height of travel above the surface, higher negative charge density and the casein passivation, and may possibly be achieved with the nanoscale transistor sitting directly on the guiding channel floor.
Single particle and momentum relaxation times in two-dimensional electron systems
Publisher: SPIE
Date: 21-12-2008
DOI: 10.1117/12.759655
The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs
Publisher: SPIE
Date: 21-12-2008
DOI: 10.1117/12.759015
Conductance quantisation in an induced hole quantum wire
Publisher: AIP
Date: 2007
DOI: 10.1063/1.2730073
Electromagnetic Wave Chaos in Gradient Refractive Index Optical Cavities
Publisher: American Physical Society (APS)
Date: 11-06-2001
Scaling of the Kondo zero-bias peak in a hole quantum dot at finite temperatures
Publisher: American Physical Society (APS)
Date: 14-05-2013
Is thermal annealing a viable alternative for crystallisation in triethylsilylethynyl anthradithiophene organic transistors?
Publisher: Informa UK Limited
Date: 05-05-2014
Ballistic induced hole quantum wires fabricated on a (1 0 0)-oriented AlGaAs/GaAs heterostructure
Publisher: Elsevier BV
Date: 02-2010
Observation of orientation- andk-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures
Publisher: IOP Publishing
Date: 24-03-2010
An Improved Process for Fabricating High-Mobility Organic Molecular Crystal Field-Effect Transistors
Publisher: IEEE
Date: 2006
Ballistic transport in induced one-dimensional hole systems
Publisher: AIP Publishing
Date: 28-08-2006
DOI: 10.1063/1.2337525
Abstract: The authors have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs∕GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities and, in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs& .
Authenticating Pollock paintings using fractal geometry
Publisher: Elsevier BV
Date: 04-2007
Fabrication and characterization of an induced GaAs single hole transistor
Publisher: AIP Publishing
Date: 03-2010
DOI: 10.1063/1.3336011
Abstract: We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and an order of magnitude better than in silicon SETs.
Resistively Detected Nuclear Magnetic Resonance in n- and p-Type GaAs Quantum Point Contacts
Publisher: American Chemical Society (ACS)
Date: 13-07-2011
DOI: 10.1021/NL201211D
Abstract: We present resistively detected NMR measurements in induced and modulation-doped electron quantum point contacts, as well as induced hole quantum point contacts. While the magnitude of the resistance change and associated NMR peaks in n-type devices is in line with other recent measurements using this technique, the effect in p-type devices is too small to measure. This suggests that the hyperfine coupling between holes and nuclei in this type of device is much smaller than the electron hyperfine coupling, which could have implications in quantum information processing.
Ground-plane screening of Coulomb interactions by a nearby two-dimensional system
Publisher: Elsevier BV
Date: 02-2010
The interplay between one-dimensional confinement and two-dimensional crystallographic anisotropy effects in ballistic hole quantum wires
Publisher: IOP Publishing
Date: 15-04-2009
Temperature and size dependence of fractal MCF in semiconductor billiards
Publisher: Elsevier BV
Date: 05-2000
Using a Tunable Quantum Wire To Measure the Large out-of-Plane Spin Splitting of Quasi Two-Dimensional Holes in a GaAs Nanostructure
Publisher: American Chemical Society (ACS)
Date: 26-12-2013
DOI: 10.1021/NL303596S
Abstract: The out-of-plane g-factor g([perpendicular])(*) for quasi two-dimensional (2D) holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the 2D plane. We measure an out-of-plane g-factor up to g([perpendicular])(*) = 5, which is larger than previous optical studies of g([perpendicular])(*) and is approaching the long predicted but never experimentally verified out-of-plane g-factor of 7.2 for heavy holes.
Fractal transistors
Publisher: IOP Publishing
Date: 11-1997
The dependence of fractal conductance fluctuations on soft-wall profile in a double-2DEG billiard
Publisher: Elsevier BV
Date: 2002
Ballistic transport in one-dimensional bilayer hole systems
Publisher: Elsevier BV
Date: 08-2006
Can insulating the gates lead us to stable modulation-doped hole quantum devices?
Publisher: IEEE
Date: 12-2010
Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot
Publisher: American Physical Society (APS)
Date: 12-08-2011
Anisotropic Zeeman Splitting In Ballistic One-Dimensional Hole Systems
Publisher: AIP
Date: 2007
DOI: 10.1063/1.2730082
Geometry-independence of fractal ballistic processes
Publisher: Elsevier BV
Date: 07-2003
Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems
Publisher: American Physical Society (APS)
Date: 21-12-2005
A comparative study of transistors based on wurtzite and zincblende InAs nanowires
Publisher: IEEE
Date: 12-2010
The effect of (NH4)(2)S-x passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices
Publisher: IOP Publishing
Date: 17-07-2013
DOI: 10.1088/0953-8984/25/32/325304
Abstract: We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements we show that while (NH4)2Sx treatment gives a 40-60 × increase in photoluminescence intensity for the (100) surface, an increase of only 2-3 × is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.
Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor
Publisher: AIP Publishing
Date: 06-01-2014
DOI: 10.1063/1.4858958
Abstract: Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.
A Tunable Metal–Organic Resistance Thermometer
Publisher: Wiley
Date: 14-12-2010
Fabrication of Undoped AlGaAs/GaAs Electron Quantum Dots
Publisher: AIP
Date: 2011
DOI: 10.1063/1.3666394
Competition between superconductivity and weak localization in metal-mixed ion-implanted polymers
Publisher: American Physical Society (APS)
Date: 29-04-2010
Quantum ratchets act as heat pumps
Publisher: Elsevier BV
Date: 03-2002
An investigation of Weierstrass self-similarity in a semiconductor billiard
Publisher: IOP Publishing
Date: 15-02-2000
Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
DOI: 10.1039/D0NR04402D
Abstract: Experimental data and modelling show that invasive Hall probes lead to substantial misestimates of carrier concentration and mobility in 2D-nanostructure devices.
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry
Publisher: American Chemical Society (ACS)
Date: 05-01-2017
DOI: 10.1021/ACS.NANOLETT.6B04075
Abstract: A key task in the emerging field of bioelectronics is the transduction between ionic rotonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types-electronic signals in inorganic semiconductors and ionic rotonic signals in organic or bio-organic polymers, gels, or electrolytes. Here we demonstrate a new class of organic-inorganic transducing interface featuring semiconducting nanowires electrostatically gated using a solid proton-transporting hygroscopic polymer. This model platform allows us to study the basic transducing mechanisms as well as deliver high fidelity signal conversion by tapping into and drawing together the best candidates from traditionally disparate realms of electronic materials research. By combining complementary n- and p-type transducers we demonstrate functional logic with significant potential for scaling toward high-density integrated bioelectronic circuitry.
A physical explanation for the origin of self-similar magnetoconductance fluctuations in semiconductor billiards
Publisher: Elsevier BV
Date: 05-2000
Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography
Publisher: American Chemical Society (ACS)
Date: 15-02-2011
DOI: 10.1021/NL104403G
Abstract: An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the subthreshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 and 4 K, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing.
Evolution of the bilayer ν= 1 quantum Hall state under charge imbalance
Publisher: American Physical Society (APS)
Date: 10-02-2005
Fabrication and characterisation of an induced ambipolar device on AlGaAs/GaAs Heterostructures
Publisher: IEEE
Date: 12-2010
Revisiting Pollock's drip paintings (Reply)
Publisher: Springer Science and Business Media LLC
Date: 11-2006
DOI: 10.1038/NATURE05399
A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications.
Publisher: AIP Publishing
Date: 08-2019
DOI: 10.1063/1.5099293
Abstract: We report on a parylene chemical vapor deposition system custom designed for producing ultrathin parylene films (5-100 nm thickness) for use as an electrical insulator in nanoscale electronic devices, including as the gate insulator in transistors. The system features a small deposition chamber that can be isolated and purged for process termination, a quartz crystal microbalance for monitoring deposition, and a rotating angled stage to increase coating conformity. The system was mostly built from off-the-shelf vacuum fittings allowing for easy modification and reduced cost compared to commercial parylene coating systems. The production of ultrathin parylene films for device applications is a niche not well catered to by commercial coating systems, which are typically designed to give thicker coatings (microns) with high uniformity over much larger areas. An added advantage of our design for nanoscale device applications is that the small deposition chamber is readily removable for transfer to a glovebox to enable parylene deposition onto pristine surfaces prepared in oxygen/water-free environments with minimal contamination.
Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET
Publisher: Elsevier BV
Date: 03-2005
Electrometry using the quantum Hall effect in a bilayer two-dimensional electron system
Publisher: AIP Publishing
Date: 24-05-2010
DOI: 10.1063/1.3428778
Abstract: We discuss the development of a sensitive electrometer that utilizes a two-dimensional electron gas (2DEG) in the quantum Hall regime. As a demonstration, we measure the evolution of the Landau levels in a second, nearby 2DEG as the applied perpendicular magnetic field is changed, and extract an effective mass for electrons in GaAs that agrees within experimental error with previous measurements.
Zeeman Splitting in Ballistic Hole Quantum Wires
Publisher: American Physical Society (APS)
Date: 11-07-2006
Editorial—Focus on inorganic semiconductor nanowires for device applications
Publisher: IOP Publishing
Date: 15-12-2018
Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots
Publisher: American Physical Society (APS)
Date: 11-05-2012
Origin of the hysteresis in bilayer two-dimensional systems in the quantum Hall regime
Publisher: American Physical Society (APS)
Date: 13-10-2010
Towards low-dimensional hole systems in Be-doped GaAs nanowires
Publisher: IOP Publishing
Date: 03-2017
Abstract: GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly confined 0D and 1D hole systems with strong spin-orbit effects, motivating our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top-gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good transistor performance for moderate doping, with conduction freezing out at low temperature for lowly doped nanowires and inability to reach a clear off-state under gating for the highly doped nanowires. Our best devices give on-state conductivity 95 nS, off-state conductivity 2 pS, on-off ratio [Formula: see text], and sub-threshold slope 50 mV/dec at [Formula: see text] K. Lastly, we made a device featuring a moderately doped nanowire with annealed contacts and multiple top-gates. Top-gate sweeps show a plateau in the sub-threshold region that is reproducible in separate cool-downs and indicative of possible conductance quantisation highlighting the potential for future quantum device studies in this material system.
(100) GaAs/Al(x)Ga(1-x)As heterostructures for Zeeman spin splitting studies of hole quantum wires
Publisher: Elsevier BV
Date: 05-2011
Is it the boundaries or disorder that dominates electron transport in semiconductor `billiards'?
Publisher: Wiley
Date: 18-06-2013
Abstract: Semiconductor billiards are often considered as ideal systems for studying dynamical chaos in the quantum mechanical limit. In the traditional picture, once the electron's mean free path, as determined by the mobility, becomes larger than the device, disorder is negligible and electron trajectories are shaped by specular reflection from the billiard walls alone. Experimental insight into the electron dynamics is normally obtained by magnetoconductance measurements. A number of recent experimental studies have shown these measurements to be largely independent of the billiard's exact shape, and highly dependent on s le‐to‐s le variations in disorder. In this paper, we discuss these more recent findings within the full historical context of work on semiconductor billiards, and offer strong evidence that small‐angle scattering at the sub‐100 nm length‐scale dominates transport in these devices. This has important implications for the role these devices can play for experimental tests of ideas in quantum chaos.
Role of background impurities in the single-particle relaxation lifetime of a two-dimensional electron gas
Publisher: American Physical Society (APS)
Date: 14-07-2009
An all-organic active pixel photosensor featuring ion-gel transistors
Publisher: Informa UK Limited
Date: 2015
Novel annealing processes for soluble acenes
Publisher: IEEE
Date: 02-2010
Chaotic ray dynamics and fast optical switching in micro-cavities with a graded refractive index
Publisher: Elsevier BV
Date: 12-1999
Tracking the energies of one-dimensional sub-band edges in quantum point contacts using dc conductance measurements
Publisher: IOP Publishing
Date: 22-08-2011
DOI: 10.1088/0953-8984/23/36/362201
Abstract: The semiconductor quantum point contact has long been a focal point for studies of one-dimensional (1D) electron transport. Their electrical properties are typically studied using ac conductance methods, but recent work has shown that the dc conductance can be used to obtain additional information, with a density-dependent Landé effective g-factor recently reported (Chen et al 2009 Phys. Rev. B 79 081301). We discuss previous dc conductance measurements of quantum point contacts, demonstrating how valuable additional information can be extracted from the data. We provide a comprehensive and general framework for dc conductance measurements that provides a path to improving the accuracy of existing data and obtaining useful additional data. A key aspect is that dc conductance measurements can be used to map the energy of the 1D sub-band edges directly, giving new insight into the physics that takes place as the spin-split 1D sub-bands populate. Through a re-analysis of the data obtained by Chen et al, we obtain two findings. The first is that the 2↓ sub-band edge closely tracks the source chemical potential when it first begins populating before dropping more rapidly in energy. The second is that the 2↑ sub-band populates more rapidly as the sub-band edge approaches the drain potential. This second finding suggests that the spin-gap may stop opening, or even begin to close again, as the 2↑ sub-band continues populating, consistent with recent theoretical calculations and experimental studies.
Fabrication and characterization of an undoped GaAs single hole transistor
Publisher: IEEE
Date: 12-2010
Nuclear magnetic resonance in GaAs-AlGaAs nanostructure devices
Publisher: IEEE
Date: 12-2010
Conductance quantization and the 0.7×2e2/h conductance anomaly in one-dimensional hole systems
Publisher: AIP Publishing
Date: 02-01-2006
DOI: 10.1063/1.2161814
Abstract: We have studied ballistic transport in a one-dimensional (1D) channel formed using surface gate techniques on a back-gated, high-mobility, bilayer two-dimensional hole system. At millikelvin temperatures, robust conductance quantization is observed in the quantum wire formed in the top layer of the bilayer system, without the gate instabilities that have h ered previous studies of 1D hole systems. Using source drain bias spectroscopy, we have measured the 1D subband spacings, which are 5–10 times smaller than in comparable GaAs electron systems, but 2–3 times larger than in previous studies of 1D holes. We also report the first observation of the anomalous conductance plateau at G=0.7×2e2∕h in a 1D hole system.
A Conducting polymer with enhanced electronic stability applied in cardiac models
Publisher: American Association for the Advancement of Science (AAAS)
Date: 04-11-2016
Abstract: Researchers develop sutureless conductive patch with enhanced biostability and effect on heart conduction velocity.
Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors
Publisher: IEEE
Date: 12-2014
Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot
Publisher: American Physical Society (APS)
Date: 17-04-2014
Using light and heat to controllably switch and reset disorder configuration in nanoscale devices
Publisher: American Physical Society (APS)
Date: 19-02-2015
Using Polymer Electrolyte Gates to Set-and-Freeze Threshold Voltage and Local Potential in Nanowire-based Devices and Thermoelectrics
Publisher: Wiley
Date: 31-10-2015
How InAs crystal phase affects the electrical performance of InAs nanowire FETs
Publisher: IEEE
Date: 12-2014
The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
Publisher: IOP Publishing
Date: 17-10-2017
Abstract: We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N
Field-orientation dependence of the Zeeman spin splitting in (In,Ga)As quantum point contacts
Publisher: American Physical Society (APS)
Date: 12-01-2010
QUANTUM POINT CONTACTS Double or nothing?
Publisher: Springer Science and Business Media LLC
Date: 09-2013
DOI: 10.1038/NPHYS2740
Effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems
Publisher: American Physical Society (APS)
Date: 13-05-2008
Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins
Publisher: American Chemical Society (ACS)
Date: 07-04-2021
Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy.
Publisher: American Chemical Society (ACS)
Date: 20-06-2019
DOI: 10.1021/ACS.NANOLETT.9B01703
Abstract: We report a method for growing rectangular InAs nanofins with deterministic length, width, and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, while retaining the benefits of bottom-up epitaxial growth. The transferred nanofins were made into devices featuring multiple contacts for Hall effect and four-terminal resistance studies, as well as a global back-gate and nanoscale local top-gates for density control. Hall studies give a 3D electron density 2.5-5 × 10
p-GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating
Publisher: American Chemical Society (ACS)
Date: 22-08-2018
DOI: 10.1021/ACS.NANOLETT.8B02249
Abstract: Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical subthreshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ratio ∼10
The reduced effective interaction parameter in closely spaced two-dimensional hole systems
Publisher: AIP
Date: 2009
DOI: 10.1063/1.3295372
Metallic behavior in low-disorder two-dimensional hole systems in the presence of long- and short-range disorder
Publisher: Elsevier BV
Date: 03-2008
The 0.7 anomaly in one-dimensional hole quantum wires
Publisher: IOP Publishing
Date: 04-2008
Chemical control of gate length in lateral wrap-gated InAs nanowire FETs
Publisher: IEEE
Date: 12-2010
Fabrication of undoped AlGaAs/GaAs electron quantum dots
Publisher: IEEE
Date: 02-2010
The dependence of fractal conductance fluctuations on semiconductor billiard parameters
Publisher: Elsevier BV
Date: 03-2002
A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor
Publisher: IOP Publishing
Date: 25-11-2013
DOI: 10.1088/0953-8984/25/50/505302
Abstract: We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects which arise from coherent tunnelling of electrons in the quantum dot.
Superconductivity in metal-mixed ion-implanted polymer films
Publisher: AIP Publishing
Date: 09-10-2006
DOI: 10.1063/1.2358190
Abstract: Ion implantation of normally insulating polymers offers an alternative to depositing conjugated organics onto plastic films to make electronic circuits. We used a 50keV nitrogen ion beam to mix a thin 10nm Sn∕Sb alloy film into the subsurface of polyetheretherketone and report the low temperature properties of this material. We observed metallic behavior, and the onset of superconductivity below 3K. There are strong indications that the superconductivity does not result from a residual thin film of alloy, but instead from a network of alloy grains coupled via a weakly conducting, ion-beam carbonized polymer matrix.
Preparation of metal mixed plastic superconductors: Electrical properties of tin-antimony thin films on plastic substrates
Publisher: AIP Publishing
Date: 05-2009
DOI: 10.1063/1.3123803
Abstract: Metal mixed polymers are a cheap and effective way to produce flexible metals and superconductors. As part of an on-going effort to learn how to tune the properties of these systems with ion implantation, we present a study of the electrical properties of these systems prior to metal mixing. We show that the electrical properties of tin-antimony thin films are remarkably robust to variations in the substrate morphology. We demonstrate that the optical absorbance of the films at a fixed wavelength provides a reliable and reproducible characterization of the relative film thickness. We find that as the film thickness is reduced, the superconducting transition in the unimplanted thin films is broadened, but the onset of the transition remains at ∼3.7 K, the transition temperature of bulk Sn. This is in marked contrast to the behavior of metal mixed films, which suggests that the metal mixing process has a significant effect on the physics of the superconducting state beyond that achieved by reducing the film thickness alone.
Quantum transport in one-dimensional GaAs hole systems
Publisher: Inderscience Publishers
Date: 2008
Fractal Transport Behavior in Coupled-Dot System
Publisher: Physical Society of Japan
Date: 03-01-2003
Comment on “Fractal Conductance Fluctuations in a Soft-Wall Stadium and a Sinai Billiard”
Publisher: American Physical Society (APS)
Date: 02-08-1999
Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion
Publisher: Royal Society of Chemistry (RSC)
Date: 2021
DOI: 10.1039/D0MH01070G
Abstract: We report fully monolithic, nanoscale logic elements featuring n- and p-type nanowires as electronic channels that are proton-gated by electron-beam patterned Nafion giving DC gain exceeding 5 and frequency response up to 2 kHz.
Electrically controlled piezo-rotator for studying semiconductor nanostructures at milli-Kelvin temperatures and high magnetic fields
Publisher: IEEE
Date: 02-2010
Impact of long- and short-range disorder on the metallic behaviour of two-dimensional systems
Publisher: Springer Science and Business Media LLC
Date: 04-11-2008
DOI: 10.1038/NPHYS757
Geometry-induced fractal behaviour in a semiconductor billiard
Publisher: IOP Publishing
Date: 16-02-1998
Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot
Publisher: AIP
Date: 2013
DOI: 10.1063/1.4848430
What lurks below the last plateau: Experimental studies of the 0.7×2e 2/h conductance anomaly in one-dimensional systems
Publisher: IOP Publishing
Date: 14-10-2011
DOI: 10.1088/0953-8984/23/44/443201
Abstract: The integer quantised conductance of one-dimensional electron systems is a well-understood effect of quantum confinement. A number of fractionally quantised plateaus are also commonly observed. They are attributed to many-body effects, but their precise origin is still a matter of debate, having attracted considerable interest over the past 15 years. This review reports on experimental studies of fractionally quantised plateaus in semiconductor quantum point contacts and quantum wires, focusing on the 0.7 × 2e(2)/h conductance anomaly, its analogues at higher conductances and the zero-bias peak observed in the dc source-drain bias for conductances less than 2e(2)/h.
InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments
Publisher: American Chemical Society (ACS)
Date: 21-04-2015
DOI: 10.1021/NL5043243
Abstract: We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.
Discrete energy level spectrum dependence of fractal conductance fluctuations in semiconductor billiards
Publisher: Elsevier BV
Date: 03-2002
Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors
Publisher: American Chemical Society (ACS)
Date: 18-12-2014
DOI: 10.1021/NL403299U
Abstract: We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO4 polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap, which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.
Ohmic conduction of sub- 10 nm P-doped silicon nanowires at cryogenic temperatures
Publisher: AIP Publishing
Date: 04-02-2008
DOI: 10.1063/1.2840182
Abstract: We investigate the conduction properties of an embedded, highly phosphorus-doped nanowire with a width of 8nm lithographically defined by scanning tunneling microscope based patterning of a hydrogen-terminated Si(100):H surface. Four terminal I-V measurements show that ohmic conduction is maintained within the investigated temperature range from 35K down to 1.3K. A prominent resistance increase is observed below ∼4K which is attributed to a crossover into the strong localization regime. The low temperature conductance follows a one-dimensional variable range hopping model accompanied by positive magnetoresistance which dominates over weak localization effects at low temperature.
0.7 Structure and zero bias anomaly in one-dimensional hole systems
Publisher: Elsevier BV
Date: 03-2008
Radio-frequency reflectometry-A fast and sensitive measurement method for two-dimensional systems
Publisher: Elsevier BV
Date: 02-2010
Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
Publisher: AIP Publishing
Date: 30-01-2012
DOI: 10.1063/1.3673837
Abstract: We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are, instead, induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional electrons (μpeak = 4 × 106 cm2/Vs) and holes (μpeak = 0.8 × 106 cm2/Vs) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.
Radio-frequency reflectometry on large gated two-dimensional systems
Publisher: AIP Publishing
Date: 12-2008
DOI: 10.1063/1.3030860
Abstract: We have embedded an AlGaAs/GaAs based, gated two-dimensional (2D) hole system (2DHS) into an impedance transformer LC circuit and show that by using radio-frequency reflectometry it is possible to perform sensitive, large bandwidth, electrical resistance measurements of 2D systems at millikelvin temperatures. We construct a simple lumped element model where the gated 2DHS is described as a resistive transmission line. The model gives a qualitative understanding of the experimental results. As an ex le, we use our method to map out the Landau level evolution in a 2DHS as a function of magnetic field and gate voltage.
Origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
Publisher: American Physical Society (APS)
Date: 08-10-2012
0.7 Structure and zero bias anomaly in ballistic hole quantum wires
Publisher: American Physical Society (APS)
Date: 10-01-2008
Three key questions on fractal conductance fluctuations: Dynamics, quantization, and coherence
Publisher: American Physical Society (APS)
Date: 09-08-2004
Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures
Publisher: AIP Publishing
Date: 11-2010
DOI: 10.1063/1.3502645
Abstract: We report the design and development of a piezoelectric s le rotation system, and its integration into an Oxford Instruments Kelvinox 100 dilution refrigerator, for orientation-dependent studies of quantum transport in semiconductor nanodevices at millikelvin temperatures in magnetic fields up to 10 T. Our apparatus allows for continuous in situ rotation of a device through & ° in two possible configurations. The first enables rotation of the field within the plane of the device, and the second allows the field to be rotated from in-plane to perpendicular to the device plane. An integrated angle sensor coupled with a closed-loop feedback system allows the device orientation to be known to within ±0.03° while maintaining the s le temperature below 100 mK.
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