ORCID Profile
0000-0002-6692-7728
Current Organisation
University of Melbourne
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Condensed Matter Physics | Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Nanotechnology | Nanotechnology | Materials Engineering Not Elsewhere Classified | Mathematical Physics | Elemental Semiconductors | Surfaces and Structural Properties of Condensed Matter | Quantum Information, Computation and Communication | Condensed Matter Physics—Electronic And Magnetic Properties; | Nanoelectronics | Condensed Matter Physics—Other | Quantum Physics | Optical And Photonic Systems | Nanoscale Characterisation | Quantum Physics not elsewhere classified | Condensed Matter Physics not elsewhere classified | Classical Physics not elsewhere classified | Communications Technologies | Interdisciplinary Engineering Not Elsewhere Classified | Theoretical Physics | Condensed Matter Modelling and Density Functional Theory | Lasers and Quantum Electronics | Condensed Matter Imaging | Optics And Opto-Electronic Physics | Condensed Matter Characterisation Technique Development | Condensed Matter Physics—Structural Properties | Quantum Optics And Lasers
ANZSRC Socio-Economic Objective (SEO)
Expanding Knowledge in the Physical Sciences | Expanding Knowledge in Technology | Integrated circuits and devices | Communication equipment not elsewhere classified | Other | Physical sciences | Other | Integrated Circuits and Devices | Telecommunications | Information processing services | Preparation and Production of Energy Sources not elsewhere classified | Manufacturing not elsewhere classified | Communication services not elsewhere classified | Education and Training not elsewhere classified | Expanding Knowledge in the Chemical Sciences | Expanding Knowledge in Engineering | Manufactured products not elsewhere classified |
Related Links
Publications
G-factor and well width variations for the two-dimensional hole gas in surface conducting diamond
Publisher: AIP Publishing
Date: 22-01-2018
DOI: 10.1063/1.5010800
Abstract: Hydrogen-terminated diamond possesses a quasi two-dimensional, sub-surface hole accumulation layer with a strong and tunable spin-orbit coupling due to surface transfer doping. We report a magnetoresistance study of the phase coherent backscattering (weak localization and antilocalization) at low temperatures. The response to an external magnetic field is highly anisotropic, confirming the 2D nature of the carriers despite the short mean free path. By simultaneously applying perpendicular and parallel magnetic fields, we are able to probe the Zeeman interaction and microroughness of the quantum well at the diamond surface. From a quantitative analysis of magnetoresistance curves at 2.5 K, we derive a hole g-factor of 2.6±0.1 and rms fluctuations in the width of the hole quantum well of about 3 nm over the phase coherence length of 33 nm. Well width fluctuations are ascribed to surface roughness and to lateral fluctuations in carrier density, which self-consistently determines the width of the confining potential.
Comparison between implanted boron and phosphorus in silicon wafers
Publisher: IEEE
Date: 12-2010
Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators
Publisher: American Physical Society (APS)
Date: 07-04-2021
Colloidal Au and Ag precipitates formed in Al2O3 by ion implantation and annealing
Publisher: Elsevier BV
Date: 1993
Annealing-environment effects in the epitaxial regrowth of ion-beam-amorphized layers on CaTiO3
Publisher: AIP Publishing
Date: 08-1995
DOI: 10.1063/1.360244
Abstract: The effects of water-vapor ambients on the solid-state epitaxial regrowth of ion-beam-amorphized, near-surface layers on single-crystal CaTiO3 have been investigated using Rutherford backscattering-channeling spectroscopy, time-resolved reflectivity, and cross-sectional transmission electron microscopy (TEM). The presence of water vapor in the annealing atmosphere increases the thermally induced epitaxial regrowth rate and, within the temperature range studied (400–550 °C), decreases the activation energy for this process. TEM micrographs from s les which were partially regrown in high-H2O-concentration atmospheres revealed uneven amorphous/crystalline interfaces with fluctuations on the order of 5–10 nm. S les annealed in water-vapor-deficient atmospheres exhibited very flat interfaces after partial epitaxial regrowth. The morphologies of these interfaces are explained in terms of a segregation of hydrogen ahead of the regrowth interface. Additionally, it has been determined that the absence of oxygen does not affect the regrowth rate. S les annealed in oxygen concentrations as low as 10−21 atm exhibit growth rates that are identical to those measured for air-annealed CaTiO3 s les.
Activation and electron spin resonance of near-surface implanted bismuth donors in silicon
Publisher: American Physical Society (APS)
Date: 29-08-2019
Conditions for the formation of Ti3+ by ion implantation of a-axis α-Al2O3
Publisher: Elsevier BV
Date: 02-2004
Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals
Publisher: American Chemical Society (ACS)
Date: 11-08-2009
DOI: 10.1021/NL9014167
Abstract: The fabrication of stable ultrabright single photon sources operating at room temperature is reported. The emitter is based on a color center within a diamond nanocrystal grown on a sapphire substrate by chemical vapor deposition method and exhibits a two-level electronic behavior with a maximum measured count rate of 3.2 x 10(6) counts/s at saturation. The emission is centered at approximately 756 nm with a full width at half-maximum approximately 11 nm and an excited state lifetime of 3.7 ns. These unique properties make it a leading candidate for quantum photonics and communication applications as well as for cellular biomarking.
Constant Capacitance Deep-Level Transient Spectroscopy Study of Bulk Traps and Interface States in P Implanted Si MOS Capacitors
Publisher: IEEE
Date: 2005
Observing Er3+ Sites in Si With an In Situ Single-Photon Detector
Publisher: American Physical Society (APS)
Date: 12-01-2023
Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon
Publisher: AIP Publishing
Date: 25-09-2018
DOI: 10.1063/1.5047534
Abstract: Defects introduced by low fluence arsenic, antimony, erbium, and bismuth ion implantation have been investigated as a function of annealing temperature using deep level transient spectroscopy (DLTS) and Laplace-DLTS. The defects produced by heavy ion implantation are stable up to higher temperatures than those introduced by electron irradiation and low mass ions. This result is attributed to the enhanced defect interactions that take place in the dense collision cascades created by heavy ion implantation. As a consequence, broadened DLTS features are apparent, especially after annealing. Using high energy resolution Laplace-DLTS, the well-known singly charged acancy and vacancy-donor pair are accompanied by additional apparent defect signals. This shows that Laplace-DLTS is highly sensitive to the type of damage present, and extreme care must be exercised for reliable Arrhenius analysis.
Electronic damage in the ion-beam amorphization ofPb
Publisher:
American Physical Society (APS)
Date:
08-1992
Publisher: American Physical Society (APS)
Date: 08-1992
Temperature dependence of blistering in hydrogen implanted Si and Ge
Publisher: Elsevier BV
Date: 07-2013
Ion implantation and thermal annealing of high-Tc single crystals of YBa2Cu3Ox
Publisher: Elsevier BV
Date: 03-1989
Instability of nanocavities in amorphous silicon
Publisher: AIP Publishing
Date: 19-04-1999
DOI: 10.1063/1.123835
Abstract: This letter demonstrates that, whereas nanocavities are quite stable in crystalline Si (c-Si), they are unstable in amorphous Si (a-Si). This behavior is illustrated by introducing a band of nanocavities into c-Si by H implantation, followed by annealing at 850 °C. Amorphization of the c-Si surrounding the nanocavities led to their disappearance. Transmission electron microscopy, Rutherford backscattering, and channeling and time resolved (optical) reflectivity were used to provide details of the cavity instability process by studying the amorphous Si after implantation and subsequent crystallization. Two possible reasons are suggested for the instability of nanocavities in a-Si.
Vanadium Dioxide based tunable plasmonic antennas
Publisher: IEEE
Date: 12-2012
Chemically stabilised ion implanted waveguides in sapphire
Publisher: Institution of Engineering and Technology (IET)
Date: 1990
DOI: 10.1049/EL:19900772
Formation of an r8-Dominant Si Material
Publisher: American Physical Society (APS)
Date: 11-03-2019
Giant, Anomalous Piezoimpedance in Silicon-on-insulator
Publisher: American Physical Society (APS)
Date: 03-04-2019
Hardness and elastic modulus of zircon as a function of heavy-particle irradiation dose:
Publisher: Informa UK Limited
Date: 10-1994
Scanned Single-Electron Probe inside a Silicon Electronic Device
Publisher: American Chemical Society (ACS)
Date: 08-06-2020
Isotopic enrichment of silicon by high fluence 28Si− ion implantation
Publisher: American Physical Society (APS)
Date: 08-01-2021
Tunable optical antennas enabled by the phase transition in vanadium dioxide
Publisher: The Optical Society
Date: 04-11-2013
DOI: 10.1364/OE.21.027503
Abstract: Optical antennas, subwavelength metallic structures resonating at visible frequencies, are a relatively new branch of antenna technology being applied in science, technology and medicine. Dynamically tuning the resonances of these antennas would increase their range of application and offer potential increases in plasmonic device efficiencies. Silver nanoantenna arrays were fabricated on a thin film of the phase change material vanadium dioxide (VO(2)) and the resonant wavelength of these arrays was modulated by increasing the temperature of the substrate above the critical temperature (approximately 68 °C). Depending on the array, wavelength modulation of up to 110 nm was observed.
Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon
Publisher: Springer Berlin Heidelberg
Date: 2009
A deep level transient spectroscopy study of vacancy-related defect profiles in channeled ion implanted silicon
Publisher: IEEE
Date: 2002
Ion channeling and raman scattering study of self-implanted silicon
Publisher: IEEE
Date: 2002
Evidence for the R8 phase of germanium
Publisher: American Physical Society (APS)
Date: 20-02-2013
Size dependence of structural stability in nanocrystalline diamond
Publisher: American Physical Society (APS)
Date: 15-12-2000
Time resolved reflectivity measurements in Pb-implanted SrTiO3
Publisher: Elsevier BV
Date: 02-1990
Angular dependence of defect formation in H-implanted silicon studied using deep level transient spectroscopy
Publisher: Elsevier BV
Date: 04-2007
Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy
Publisher: The Electrochemical Society
Date: 10-2010
DOI: 10.1149/1.3485690
Abstract: The diffusion and segregation of hydrogen in surface amorphous silicon layers during solid phase epitaxy (SPE) is modeled. The SPE and H concentration profiles from J. Roth et al., Mat. Res. Soc. Symp. Proc. 205, 45 (1992) are used to test H segregation and diffusion models. Excellent agreement is obtained with a trap limited diffusion model. This model has previously been found to describe the diffusion of fluorine well. The H segregation coefficient at the crystalline-amorphous interface is determined at a temperature of 606oC to be 0.064. The possible temperature dependence of the segregation coefficient and its effect on SPE are also discussed.
Fabrication and characterization of PECVD silicon nitride for RF MEMS applications
Publisher: Springer Science and Business Media LLC
Date: 11-05-2013
Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon
Publisher: AIP Publishing
Date: 02-08-2004
DOI: 10.1063/1.1768616
Abstract: The kinetics of solid phase epitaxy (SPE) in surface amorphous silicon layers doped with a single arsenic profile have been examined in relation to the generalized Fermi level shifting model of the SPE growth process. The model has been extended to include passivation by hydrogen of the defects responsible for SPE and∕or passivation of dopant atoms. A previous study has suggested that the asymmetry between the dopant-enhanced SPE rate and the arsenic concentration profile is due to the infiltration of hydrogen from the surface oxide. Theoretical calculations of the dopant-enhanced SPE rate compare well with experiment if it is assumed that the indiffusing hydrogen passivates some of the SPE defects and∕or some of the dopant atoms.
High-electron-affinity oxide V2O5 enhances surface transfer doping on hydrogen-terminated diamond
Publisher: Elsevier BV
Date: 10-2020
dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium
Publisher: Springer Science and Business Media LLC
Date: 2014
DOI: 10.1557/OPL.2014.408
Abstract: The formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in an attempt to minimize the thermal budget for the process. Cross-sectional Transmission Electron Microscopy (TEM) was used to determine the texture of the germanide layer and the morphology and constituent composition of the Ge/NiGe interface. The onset and completion of reaction between Ni and Ge were identified by means of a heated stage in combination with in-situ x-ray diffraction (XRD) measurements. The stages of reaction were also monitored using measurements of sheet resistance of the germanides by the Van der Pauw technique. The results have shown that the minimum temperature for the initiation of reaction of Ni and Ge to form NiGe was 225 °C. However, an annealing temperature 275 °C was necessary for the extensive (and practical) formation of NiGe. Between 200 and 300 °C, the duration of annealing required for the formation of NiGe was significantly longer than at higher temperatures. The stoichiometry of the germanide was very close to NiGe (1:1) as determined using energy dispersive spectroscopy (EDS).
Recent Insights In Solid Phase Epitaxy of Silicon and Germanium
Publisher: The Electrochemical Society
Date: 10-2010
DOI: 10.1149/1.3485696
Abstract: The crystallization of amorphous layers via solid phase epitaxy (SPE) is commonly used in semiconductor device fabrication to activate dopants. The kinetics of SPE depend on temperature, dopant and impurity concentration, hydrostatic pressure and crystallographic orientation. The effect of H on SPE in both Si and Ge is discussed. Numerical simulations are performed to model the H diffusion, the moving amorphous/crystalline interfaces and the refinement of the H profile at these interfaces. Despite the high H concentration involved, a simple Fickian diffusion model results in good agreement with the SIMS data. A significant fraction of the H escapes from the a-Si layer during SPE and becomes trapped at end of range defects. The light-emitting properties of these defects are investigated. Finally, the formation of germanides via SPE is discussed.
Activation Energy and Blistering Rate in Hydrogen-implanted Semiconductors
Publisher: Springer Science and Business Media LLC
Date: 2012
DOI: 10.1557/OPL.2012.677
Abstract: Hydrogen blister rates in Si (100), Si (111) and Ge (100) substrates are compared as a function of annealing temperature and time, for a range of implant energies and fluences. For each material, the rate of blister formation was found to exhibit Arrhenius behavior and to be characterised by a single activation energy over the temperature range examined. The extracted activation energies were 2.28±0.03 eV, 2.17±0.06 eV and 1.4±0.03 eV for (100) Si (111) Si and (100) Ge, respectively. These results are compared with reported measurements and discussed in relation to proposed models of hydrogen blistering.
Surface damage on diamond membranes fabricated by ion implantation and lift-off
Publisher: AIP Publishing
Date: 06-06-2011
DOI: 10.1063/1.3597223
Abstract: Thin membranes with excellent optical properties are essential elements in diamond based photonic systems. Due to the chemical inertness of diamond, ion beam processing must be employed to carve photonic structures. One method to realize such membranes is ion-implantation graphitization followed by chemical removal of the sacrificial graphite. The interface revealed when the sacrificial layer is removed has interesting properties. To investigate this interface, we employed the surface sensitive technique of grazing angle channeled Rutherford backscattering spectroscopy. Even after high temperature annealing and chemical etching a thin layer of damaged diamond remains, however, it is removed by hydrogen plasma exposure.
Structural characterisation of Ti:sapphire regions formed by localised high-energy implantation of Ti and O ions
Publisher: Elsevier BV
Date: 07-2001
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
Publisher: AIP Publishing
Date: 11-01-2016
DOI: 10.1063/1.4939906
Abstract: In this work, we present the creation and characterisation of single photon emitters at the surface of 4H- and 6H-SiC, and of 3C-SiC epitaxially grown on silicon. These emitters can be created by annealing in an oxygen atmosphere at temperatures above 550 °C. By using standard confocal microscopy techniques, we find characteristic spectral signatures in the visible region. The excited state lifetimes are found to be in the nanosecond regime in all three polytypes, and the emission dipoles are aligned with the lattice. HF-etching is shown to effectively annihilate the defects and to restore an optically clean surface. The defects described in this work have ideal characteristics for broadband single photon generation in the visible spectral region at room temperature and for integration into nanophotonic devices.
Structural inequivalence of the ion-damage–produced amorphous state and the glass state in lead pyrophosphate
Publisher: American Physical Society (APS)
Date: 06-03-1989
A review on single photon sources in silicon carbide
Publisher: IOP Publishing
Date: 31-01-2017
Abstract: This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these in idually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.
The chemical state of iron ions implanted into silicon carbide
Publisher: Elsevier BV
Date: 07-1991
2 MeV He microbeam damage in Si and GaAs
Publisher: Elsevier BV
Date: 03-1991
Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
Publisher: American Physical Society (APS)
Date: 14-05-2019
Donor activation and damage in Si-SiO2 from low-dose, low-energy ion implantation studied via electrical transport in MOSFETs
Publisher: IOP Publishing
Date: 03-2005
Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures
Publisher: AIP Publishing
Date: 13-06-2016
DOI: 10.1063/1.4953583
Abstract: Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.
Integration of Single-Photon Emitters into 3C-SiC Microdisk Resonators
Publisher: American Chemical Society (ACS)
Date: 06-03-2017
Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon
Publisher: Elsevier BV
Date: 12-2003
The effect of post-implantation annealing on the microstructure of Al2O3 implanted with iron at − 185°C
Publisher: Elsevier BV
Date: 07-1991
Photoluminescense of B and P doped Si nanocrystals fabricated by ion implantation
Publisher: IEEE
Date: 12-2010
Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces
Publisher: Wiley
Date: 09-11-2022
Abstract: Scanning tunneling luminescence microscopy (STLM) and scanning tunneling spectroscopy (STS) are used to study step‐bunched, oxidized 4H‐SiC surfaces prepared using a silicon melt process. The step‐bunched surface consists of atomically smooth terraces parallel to [0001] crystal planes, and rougher risers containing nanoscale steps formed by the termination of these planes. The striking topography of this surface is well resolved with large tip biases around −8 V and set currents less than 1 nA. Hysteresis in the STS spectra is preferentially observed on risers, suggesting that they contain a higher density of surface charge traps than the terraces where hysteresis is more frequently absent. Similarly, intense sub‐gap light emission centered around 2.4 eV is observed mainly on the risers albeit only with larger tunneling currents equal to or greater than 10 nA. The surface‐oxide‐related origin of this emission is reinforced by comparing tunneling electroluminescence spectra on the 4H‐ and 6H‐polytypes, and by the observation of a drastic reduction in emitted intensity after removal of the oxide in buffered HF. These results demonstrate the capability of STLM for the observation of surface impurities and defects responsible for sub‐gap light emission with spatial resolutions approaching the length scale of the defects themselves.
Structural changes in ultra-high-dose self-implanted crystalline and amorphous silicon
Publisher: Elsevier BV
Date: 1999
Investigation of charge carrier trapping in H-terminated diamond devices
Publisher: AIP Publishing
Date: 05-10-2020
DOI: 10.1063/5.0026104
Abstract: Surfaces and interfaces can dominate charge carrier transport dynamics in electronic devices, impeding realization of a material's full potential. Here, we investigate transport in a two-terminal diamond device comprising a conductive channel defined by a hydrogen-terminated diamond surface, bridging two TiC contacts. The surface charge distribution was imaged by monitoring the photoluminescence of nitrogen vacancy centers incorporated below the active device layer. A strong charge accumulation near the TiC contact/H-terminated channel interface is observed and is discussed in terms of deviation from Ohmic behavior evident in the DC electrical measurements. Small voltage steps applied to the device result in current transients due to carrier trapping at the contact/diamond interface. This gives rise to dynamic negative capacitance at low AC frequencies and is discussed in detail.
Ion-implantation and analysis for doped silicon slot waveguides
Publisher: EDP Sciences
Date: 2012
Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling
Publisher: IOP Publishing
Date: 18-03-2013
DOI: 10.1088/0957-4484/24/14/145304
Abstract: Solid state electronic devices fabricated in silicon employ many ion implantation steps in their fabrication. In nanoscale devices deterministic implants of dopant atoms with high spatial precision will be needed to overcome problems with statistical variations in device characteristics and to open new functionalities based on controlled quantum states of single atoms. However, to deterministically place a dopant atom with the required precision is a significant technological challenge. Here we address this challenge with a strategy based on stepped nanostencil lithography for the construction of arrays of single implanted atoms. We address the limit on spatial precision imposed by ion straggling in the nanostencil-fabricated with the readily available focused ion beam milling technique followed by Pt deposition. Two nanostencils have been fabricated a 60 nm wide aperture in a 3 μm thick Si cantilever and a 30 nm wide aperture in a 200 nm thick Si3N4 membrane. The 30 nm wide aperture demonstrates the fabricating process for sub-50 nm apertures while the 60 nm aperture was characterized with 500 keV He(+) ion forward scattering to measure the effect of ion straggling in the collimator and deduce a model for its internal structure using the GEANT4 ion transport code. This model is then applied to simulate collimation of a 14 keV P(+) ion beam in a 200 nm thick Si3N4 membrane nanostencil suitable for the implantation of donors in silicon. We simulate collimating apertures with widths in the range of 10-50 nm because we expect the onset of J-coupling in a device with 30 nm donor spacing. We find that straggling in the nanostencil produces mis-located implanted ions with a probability between 0.001 and 0.08 depending on the internal collimator profile and the alignment with the beam direction. This result is favourable for the rapid prototyping of a proof-of-principle device containing multiple deterministically implanted dopants.
Kinetics of solid phase epitaxy in buried amorphous Si layers formed by MeV ion implantation
Publisher: AIP Publishing
Date: 12-08-1996
DOI: 10.1063/1.116945
Abstract: The kinetics of solid phase epitaxy have been measured in buried amorphous Si layers produced by ion implantation. Crystallization occurs simultaneously at both amorphous/crystalline interfaces of the buried layer. By collecting time resolved reflectivity data simultaneously at λ=1152 nm and λ=632.8 nm it is possible to accurately determine the crystallization rates at both interfaces. Both interfaces crystallize at a constant rate that is comparable to the intrinsic rate found for thick amorphous surface layers before rate retardation due to H infiltration has occurred. Thus, buried amorphous Si layers provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si.
Erbium-doped slot waveguides containing size-controlled silicon nanocrystals
Publisher: AIP Publishing
Date: 28-04-2015
DOI: 10.1063/1.4919420
Formation of Ti:sapphire via high-temperature processing of Ti-implanted sapphire crystals
Publisher: SPIE
Date: 25-03-2004
DOI: 10.1117/12.531802
Hydrogen-Terminated Diamond MOSFETs Using Ultrathin Glassy Ga2O3 Dielectric Formed by Low-Temperature Liquid Metal Printing Method
Publisher: American Chemical Society (ACS)
Date: 28-04-2015
Investigation of amorphisation of germanium using modeling and experimental processes
Publisher: SPIE
Date: 20-12-2013
DOI: 10.1117/12.2035093
Ion implantation and thermal annealing of single crystals of the type YBa2Cu3Ox
Publisher: Elsevier BV
Date: 07-1988
Formation of Ti3+ in sapphire by co-implantation of Ti and O ions
Publisher: AIP Publishing
Date: 24-01-2000
DOI: 10.1063/1.125775
Electrically controlling single-spin qubits in a continuous microwave field
Publisher: American Association for the Advancement of Science (AAAS)
Date: 03-04-2015
Abstract: Control of in idual spin qubits through local electric fields, suitable for large-scale silicon quantum computers.
Indium tin oxide film characterization using the classical Hall Effect
Publisher: IEEE
Date: 12-2014
Concentration profiles and structural changes of silver intercalated titanium disulfide
Publisher: Elsevier BV
Date: 03-2000
Annealing environment effects in solid-phase epitaxial regrowth of Fe-implanted Al2O3
Publisher: Elsevier BV
Date: 02-1990
Collapse of nanocavities studied by ion-channeling and Raman spectroscopy
Publisher: Elsevier BV
Date: 05-2002
Clinical and genetic characterization of pituitary gigantism: an international collaborative study in 208 patients
Publisher: Bioscientifica
Date: 17-07-2015
DOI: 10.1530/ERC-15-0320
Abstract: Despite being a classical growth disorder, pituitary gigantism has not been studied previously in a standardized way. We performed a retrospective, multicenter, international study to characterize a large series of pituitary gigantism patients. We included 208 patients (163 males 78.4%) with growth hormone excess and a current revious abnormal growth velocity for age or final height s.d. above country normal means. The median onset of rapid growth was 13 years and occurred significantly earlier in females than in males pituitary adenomas were diagnosed earlier in females than males (15.8 vs 21.5 years respectively). Adenomas were ≥10 mm (i.e., macroadenomas) in 84%, of which extrasellar extension occurred in 77% and invasion in 54%. GH/IGF1 control was achieved in 39% during long-term follow-up. Final height was greater in younger onset patients, with larger tumors and higher GH levels. Later disease control was associated with a greater difference from mid-parental height ( r =0.23, P =0.02). AIP mutations occurred in 29% microduplication at Xq26.3 – X-linked acrogigantism (X-LAG) – occurred in two familial isolated pituitary adenoma kindreds and in ten sporadic patients. Tumor size was not different in X-LAG, AIP mutated and genetically negative patient groups. AIP- mutated and X-LAG patients were significantly younger at onset and diagnosis, but disease control was worse in genetically negative cases. Pituitary gigantism patients are characterized by male predominance and large tumors that are difficult to control. Treatment delay increases final height and symptom burden. AIP mutations and X-LAG explain many cases, but no genetic etiology is seen in % of cases.
Electrically detected magnetic resonance in ion-implanted Si : P nanostructures
Publisher: AIP Publishing
Date: 30-10-2006
DOI: 10.1063/1.2358928
Abstract: The authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5K, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 1017cm−3. By restricting this secondary implant to a 100×100nm2 region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.
P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3
Publisher: American Chemical Society (ACS)
Date: 09-11-2022
Hydrogen catalyzed crystallization of strontium titanate
Publisher: AIP Publishing
Date: 09-1994
DOI: 10.1063/1.357574
Abstract: The crystallization rate of amorphous strontium titanate is enhanced by more than an order of magnitude during thermal annealing in water vapor as compared to a dry ambient. Time resolved optical reflectivity (TRR) has been combined with Rutherford backscattering spectrometry (RBS) and ion channelling to investigate this effect. Thin amorphous films (0.6 μm) were produced on single-crystal substrates of (100) strontium titanate by bombardment with 1.9 or 2.0 MeV Pb ions. Specimens were annealed under controlled ambient conditions (H2O, D2O, vacuum, 265–430 °C) and the solid phase epitaxial crystallization monitored in situ by TRR (633 nm). The TRR data were calibrated ex situ by transmission electron microscopy and RBS measurements. Isotope substitution, nuclear reaction analysis, and secondary-ion-mass spectrometry were utilized to reveal the uptake of hydrogen and oxygen into the implanted layer. Hydrogen is identified as the only species which penetrates to the crystal/amorphous interface. It is shown that the crystallization rate is proportional to the concentration of diffusing hydrogen (H or D) at the interface. The data show that the effect of water vapor, or more precisely, hydrogen, is to reduce the activation energy of crystallization from 2.1 to 1.0 eV. It is concluded that hydrogen, provided by the dissociation of water molecules at the surface, is a catalyst in the crystallization of amorphous strontium titanate.
The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers
Publisher: Elsevier BV
Date: 1999
Chromium single-photon emitters in diamond fabricated by ion implantation
Publisher: American Physical Society (APS)
Date: 15-03-2010
Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices
Publisher: Trans Tech Publications, Ltd.
Date: 05-2016
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.858.312
Abstract: We will review recent demonstrations of single photon emission in different silicon carbide (SiC) polytypes, in both bulk and nano-structured form. Due to well established doping, and micro- and nanofabrication procedures deep defects photoluminescence (PL) can be electrically excited and incorporated in SiC nanomaterials. Finally we will report on preliminary results to incorporate near infrared defects in SiC nanoparticles.
Hydrogen in amorphous Si and Ge during solid phase epitaxy
Publisher: Elsevier BV
Date: 02-2010
Single-atom spin qubits in silicon
Publisher: IEEE
Date: 12-2014
Defective crystal recovered from the crystallization of potassium-doped amorphous silicon films
Publisher: The Electrochemical Society
Date: 2003
DOI: 10.1149/1.1557084
Few-layered graphene growth by carbon implantation into polycrystalline nickel substrate
Publisher: IEEE
Date: 12-2012
Characterisation of solid-phase-epitaxy of amorphous germanium thin-films
Publisher: IEEE
Date: 12-2012
Formation and annealing behavior of an amorphous layer induced by tin implantation into sapphire
Publisher: Elsevier BV
Date: 04-1992
Carbon diffusion and nanocrystalline diamond formation in carbon ion-implanted oxides studied by nuclear elastic scattering
Publisher: Elsevier BV
Date: 04-2001
Single-photon emitting diode in silicon carbide
Publisher: Springer Science and Business Media LLC
Date: 23-07-2015
DOI: 10.1038/NCOMMS8783
Abstract: Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.
Ion microbeam applications in semiconductors
Publisher: Elsevier BV
Date: 03-1988
Progress in silicon-based quantum computing
Publisher: The Royal Society
Date: 15-07-2003
Abstract: We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays with sub-nanometre precision. The 'top-down' approach employs a low-energy (keV) ion beam to implant the phosphorus atoms. Single-atom control during implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure. In contrast, the 'bottom-up' approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single-electron transistors operating near the quantum limit provide fast read-out with spurious-signal rejection.
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
Publisher: Elsevier BV
Date: 02-2010
Sonochemistry and hydrothermal pathways to the fabrication of ZnO nanowire transistors
Publisher: IEEE
Date: 12-2012
Dislocation related band-edge photoluminescence in boron-implanted silicon
Publisher: IEEE
Date: 02-2008
Optical spectroscopy of erbium doped monocrystalline vanadium dioxide
Publisher: IEEE
Date: 12-2014
Valley population of donor states in highly strained silicon
Publisher: IOP Publishing
Date: 06-04-2022
Abstract: Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.8% and their wave function imaged using spatially resolved spectroscopy. A prevalence of the out-of-plane valleys is confirmed from the real-space images, and a combination of theoretical modelling tools is used to assess how this valley repopulation effect can yield isotropic exchange and tunnel interactions in the xy -plane relevant for atomically precise donor qubit devices. Finally, the residual presence of in-plane valleys is evidenced by a Fourier analysis of both experimental and theoretical images, and atomistic calculations highlight the importance of higher orbital excited states to obtain a precise relationship between valley population and strain. Controlling the valley degree of freedom in engineered strained epilayers provides a new competitive asset for the development of donor-based quantum technologies in silicon.
Deterministic doping
Publisher: Elsevier BV
Date: 05-2017
The structure of Al2O3 implanted with iron at 77 K
Publisher: Elsevier BV
Date: 02-1990
Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon
Publisher: American Chemical Society (ACS)
Date: 03-01-2022
DOI: 10.1021/ACS.NANOLETT.1C04072
Abstract: The detection of charge trap ionization induced by resonant excitation enables spectroscopy on single Er
High-resolution spectroscopy of individual erbium ions in strong magnetic fields
Publisher: American Physical Society (APS)
Date: 23-10-2020
Microscopic Imaging of the Stress Tensor in Diamond Using in Situ Quantum Sensors
Publisher: American Chemical Society (ACS)
Date: 31-05-2019
DOI: 10.1021/ACS.NANOLETT.9B01402
Abstract: The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stress are generally incapable of measuring the entire stress tensor. Here, we make use of an ensemble of atomic-sized in situ strain sensors in diamond (nitrogen-vacancy defects) to achieve spatial mapping of the full stress tensor, with a submicrometer spatial resolution and a sensitivity of the order of 1 MPa (10 MPa) for the shear (axial) stress components. To illustrate the effectiveness and versatility of the technique, we apply it to a broad range of experimental situations, including mapping the stress induced by localized implantation damage, nanoindents, and scratches. In addition, we observe surprisingly large stress contributions from functional electronic devices fabricated on the diamond and also demonstrate sensitivity to deformations of materials in contact with the diamond. Our technique could enable in situ measurements of the mechanical response of diamond nanostructures under various stimuli, with potential applications in strain engineering for diamond-based quantum technologies and in nanomechanical sensing for on-chip mass spectroscopy.
Surface morphological structures in ultra-high-dose self-implanted silicon
Publisher: AIP Publishing
Date: 28-09-1998
DOI: 10.1063/1.122290
Abstract: In this letter, we report the observation of intriguing, implantation-induced surface morphological structures in Si. Experimental evidence indicates that an extremely rough surface can occur when ultra-high-dose (∼1018 cm−2) self-implantation is performed on a partially preamorphized Si wafer within a temperature range from 175 to 250 °C. However, the same implantation into crystalline or completely amorphized Si does not produce such surface structures. Characteristics of the structures and their temperature dependence suggest a possible mechanism for their evolution.
Spatial mapping of band bending in semiconductor devices using in situ quantum sensors
Publisher: Springer Science and Business Media LLC
Date: 13-09-2018
Effect of boron on interstitial-related luminescence centers in silicon
Publisher: AIP Publishing
Date: 02-2010
DOI: 10.1063/1.3300836
Abstract: Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525 °C. The presence of boron in p-type silicon is found to produce deleterious effects on the luminescence of the interstitial-related W- and X-centers as well as a lower energy broad luminescence band. This effect has not been previously reported but it is consistent with the suppression of interstitial-related {311} extended defect formation in the presence of high boron concentrations at higher annealing temperatures. The results presented in this letter provide insight into the role of boron in the initial stages of interstitial cluster formation.
CD73 Promotes Resistance to HER2/ErbB2 Antibody Therapy
Publisher: American Association for Cancer Research (AACR)
Date: 15-10-2017
DOI: 10.1158/0008-5472.CAN-17-0707
Abstract: Expression of the ectonucleotidase CD73 by tumor cells, stromal cells, and immune cells is associated in cancer with immune suppression. In this study, we investigated the role of CD73 on the activity of the anti-HER2/ErbB2 monoclonal antibody (mAb) trastuzumab. In a prospective, randomized phase III clinical trial evaluating the activity of trastuzumab, high levels of CD73 gene expression were associated significantly with poor clinical outcome. In contrast, high levels of PD-1 and PD-L1 were associated with improved clinical outcome. In immunocompetent mouse models of HER2/ErbB2–driven breast cancer, CD73 expression by tumor cells and host cells significantly suppressed immune-mediated responses mediated by anti-ErbB2 mAb. Furthermore, anti-CD73 mAb therapy enhanced the activity of anti-ErbB2 mAb to treat engrafted or spontaneous tumors as well as lung metastases. Gene ontology enrichment analysis from gene-expression data revealed a positive association of CD73 expression with extracellular matrix organization, TGFβ genes, epithelial-to-mesenchymal transition (EMT) transcription factors and hypoxia-inducible-factor (HIF)-1 gene signature. Human mammary cells treated with TGFβ or undergoing EMT upregulated CD73 cell-surface expression, confirming roles for these pathways. In conclusion, our findings establish CD73 in mediating resistance to trastuzumab and provide new insights into how CD73 is regulated in breast cancer. Cancer Res 77(20) 5652–63. ©2017 AACR.
Spectral Broadening of a Single
Er 3 +
Publisher: American Physical Society (APS)
Date: 08-09-2022
A single-atom quantum memory in silicon
Publisher: IOP Publishing
Date: 03-2017
Electrical characterisation of spin-coated a-IZO thin-film transistors
Publisher: IEEE
Date: 12-2012
Optical Switching and Photoluminescence in Erbium Implanted Vanadium Dioxide Thin Films
Publisher: Springer Science and Business Media LLC
Date: 2013
DOI: 10.1557/OPL.2013.544
Abstract: Vanadium dioxide (VO 2 ) is a promising material for an optical switch due to the ultrafast and reversible transition between its two phases with contrasting optical, as well as electronic, properties. Meanwhile, erbium (Er 3+ ) has been a standard optical lifier for the current fiber-optic communication system. Hence, a combination of the two could be expected to make an optical switch capable of simultaneous optical lification. In the present work, the optical switching and photoluminescence of Er-implanted VO 2 were successfully demonstrated. Post-implantation annealing at 800°C or above was seen crucial for the activation of the Er centers in the VO 2 crystals.
Surface transfer doping of diamond using solution-processed molybdenum trioxide
Publisher: Elsevier BV
Date: 04-2021
Single crystalline SiGe layers on Si by solid phase epitaxy
Publisher: Elsevier BV
Date: 04-2015
Characterization of few-layered graphene grown by carbon implantation
Publisher: AIP Publishing LLC
Date: 2014
DOI: 10.1063/1.4865640
Zeeman and hyperfine interactions of a single
Er 3 +
Publisher: American Physical Society (APS)
Date: 27-06-2022
Creation and functionalization of defects in SiC by proton beam writing
Publisher: Trans Tech Publications, Ltd.
Date: 05-2017
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.897.233
Abstract: Proton beam writing was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC by proton beam writing using 1.7 MeV-proton micro beams were investigated at room temperature using confocal laser scanning microscope. As a result, photoluminescence peak around 900 nm associated with silicon vacancy was observed for the irradiated SiC without post implantation process such as annealing. The overall depth profile of photon counts detected from irradiated areas is in good agreement with simulated vacancy depth profile. This suggests that silicon vacancy can be applied to ion tracking detector. In addition, since silicon vacancy is known as single photon source of which spins can be controlled at RT, PBW is expected to be a useful tool to fabricate spin qubits.
Investigation of the environment of Cr ions implanted into sapphire
Publisher: Elsevier BV
Date: 05-2002
Solid phase epitaxial regrowth of germanium containing nanoporous structures formed by ion implantation
Publisher: AIP Publishing LLC
Date: 2014
DOI: 10.1063/1.4865642
Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
Publisher: AIP Publishing
Date: 24-08-2015
DOI: 10.1063/1.4929839
Abstract: The atomic mixing of matrix atoms during solid-phase epitaxy (SPE) is studied by means of isotopically enriched germanium (Ge) multilayer structures that were amorphized by Ge ion implantation up to a depth of 1.5 μm. Recrystallization of the amorphous structure is performed at temperatures between 350 °C and 450 °C. Secondary-ion-mass-spectrometry is used to determine the concentration-depth profiles of the Ge isotope before and after SPE. An upper limit of 0.5 nm is deduced for the displacement length of the Ge matrix atoms by the SPE process. This small displacement length is consistent with theoretical models and atomistic simulations of SPE, indicating that the SPE mechanism consists of bond-switching with nearest-neighbours across the amorphous-crystalline (a/c) interface.
Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation
Publisher: Springer Science and Business Media LLC
Date: 11-2001
Abstract: Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. S le topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.
Charge pumping electrically detected magnetic resonance of silicon carbide power transistors
Publisher: AIP Publishing
Date: 03-08-2023
DOI: 10.1063/5.0167650
Abstract: Silicon carbide (SiC) power devices are becoming central components in high voltage electronics. However, defects at interfaces and in the bulk continue to severely impact their reliability and performance. Here, we develop a charge pumping method to characterize SiC/SiO2 interface defects in fully fabricated commercial SiC power metal–oxide–semiconductor field-effect transistors (MOSFETs). The method is then used to address spin states at the SiC/SiO2 interface via charge pumping electrically detected magnetic resonance (CP-EDMR). We apply these methods to investigate the power MOSFET after electron irradiation over a dose range of 1013−1017 cm−2. We finally discuss CP-EDMR as a technique to interrogate spins during device operation for real-time monitoring of the device quality, performance, and degradation and as a probe for local magnetic fields.
Diamond nanocrystals formed by direct implantation of fused silica with carbon
Publisher: AIP Publishing
Date: 15-09-2001
DOI: 10.1063/1.1388857
Abstract: We report synthesis of diamond nanocrystals directly from carbon atoms embedded into fused silica by ion implantation followed by thermal annealing. The production of the diamond nanocrystals and other carbon phases is investigated as a function of ion dose, annealing time, and annealing environment. We observe that the diamond nanocrystals are formed only when the s les are annealed in forming gas (4% H in Ar). Transmission electron microscopy studies show that the nanocrystals range in size from 5 to 40 nm, depending on dose, and are embedded at a depth of only 140 nm below the implanted surface, whereas the original implantation depth was 1450 nm. The bonding in these nanocrystals depends strongly on cluster size, with the smaller clusters predominantly aggregating into cubic diamond structure. The larger clusters, on the other hand, consist of other forms of carbon such as i-carbon and n-diamond and tend to be more defective. This leads to a model for the formation of these clusters which is based on the size dependent stability of the hydrogen-terminated diamond phase compared to other forms of carbon. Additional studies using visible and ultraviolet Raman Spectroscopy, optical absorption, and electron energy loss spectroscopy reveal that most s les contain a mixture of sp2 and sp3 hybridized carbon phases.
Kelvin-Probe Force Microscopy Defect Study of Ion Implanted Thermal Oxide Thin Films on Silicon
Publisher: IEEE
Date: 2005
Cathodoluminescence microanalysis of diamond nanocrystals in fused silicon dioxide
Publisher: AIP Publishing
Date: 12-2008
DOI: 10.1063/1.3039215
Abstract: MeV carbon ion implantation followed by thermal annealing in a hydrogen-containing atmosphere produces a layer of diamond nanocrystals within fused quartz (SiO2). Cathodoluminescence (CL) microanalysis in a scanning electron microscope has revealed at least three previously unreported low intensity CL emissions from carbon implanted and thermally annealed fused SiO2. The CL emissions are observed at 2.78 eV [full width at half maximum (FWHM) of 0.08 eV], ∼3 eV (FWHM of 0.4 eV), and 3.18 eV (FWHM of 0.11 eV). The peak widths and energies of these emissions are incompatible with any known defects associated with the silicon dioxide host lattice. Nondestructive depth resolved CL microanalysis investigations confirm that these CL emissions originate from the near-surface region, consistent with their association with the layer of diamond nanocrystals.
Proceedings of the 20th International Conference on Ion Beam Modification of Materials (IBMM 2016)
Publisher: Elsevier BV
Date: 10-2017
Si-doped luminescence gratings
Publisher: Elsevier BV
Date: 07-2001
Synthesis of Ti:sapphire by ion implantation
Publisher: Elsevier BV
Date: 1999
Biology of breast cancer during pregnancy using genomic profiling
Publisher: Bioscientifica
Date: 13-05-2014
DOI: 10.1530/ERC-14-0111
Engineering the spin–orbit interaction in surface conducting diamond with a solid-state gate dielectric
Publisher: AIP Publishing
Date: 27-04-2020
DOI: 10.1063/5.0005690
Abstract: Hydrogen-terminated (H-terminated) diamond, when surface transfer doped, can support a sub-surface two-dimensional (2D) hole band that possesses a strong Rashba-type spin–orbit interaction. By incorporating a V2O5/Al2O3 bilayer gate dielectric in a diamond-based metal–oxide–semiconductor architecture, metallic surface conductivity can be maintained at low temperature, avoiding the carrier freeze out exhibited by devices with an Al2O3 gate dielectric alone. Hole densities of up to 2.5 × 1013 cm−2 are achieved by the electrostatic gating of the device, and the spin–orbit interaction strength can be tuned from 3.5 ± 0.5 meV to 8.4 ± 0.5 meV, with a concurrent reduction in the spin coherence length from 40 ± 1 nm to 27 ± 1 nm. The demonstration of a gated device architecture on the H-terminated that avoids the need to cycle the temperature, as is required for ionic liquid gating protocols, opens a pathway to engineering practical devices for the study and application of spin transport in diamond.
Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor
Publisher: IEEE
Date: 12-2012
Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond
Publisher: Elsevier BV
Date: 08-2020
Channeling contrast microscopy: Application to semiconductor structures
Publisher: AIP Publishing
Date: 05-1983
DOI: 10.1063/1.94108
Abstract: The new technique is demonstrated for the imaging of semiconductor structures. The technique involves the use of a channeled 4He+ microbeam, scanned across the surface to provide a channeling-contrast image of subsurface lattice disorder and atom location. The present arrangement provides a lateral resolution of ∼5 μm and an in-depth resolution of ∼30 Å. The technique is applied to the imaging of small, laser annealed regions on ion implanted silicon wafers.
Microstructure evolution in carbon-ion implanted sapphire
Publisher: AIP Publishing
Date: 15-01-2010
DOI: 10.1063/1.3284963
Abstract: Carbon ions of MeV energy were implanted into sapphire to fluences of 1×1017 or 2×1017cm−2 and thermally annealed in forming gas (4% H in Ar) for 1h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed s le. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L1) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L2) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L3) beyond the end of range. In the annealed s le some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.
Breaking the rotating wave approximation for a strongly driven dressed single-electron spin
Publisher: American Physical Society (APS)
Date: 17-10-2016
Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
Publisher: Hindawi Limited
Date: 2012
DOI: 10.1155/2012/272694
Abstract: Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing. The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia. Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip. Possible future directions for ion implantation in quantum computing and communications are also discussed.
g-factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond
Publisher: American Physical Society (APS)
Date: 29-01-2019
Storing quantum information for 30 seconds in a nanoelectronic device
Publisher: Springer Science and Business Media LLC
Date: 12-10-2014
Abstract: The spin of an electron or a nucleus in a semiconductor naturally implements the unit of quantum information--the qubit. In addition, because semiconductors are currently used in the electronics industry, developing qubits in semiconductors would be a promising route to realize scalable quantum information devices. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms, or charge and spin fluctuations arising from defects in oxides and interfaces. For materials such as silicon, enrichment of the spin-zero (28)Si isotope drastically reduces spin-bath decoherence. Experiments on bulk spin ensembles in (28)Si crystals have indeed demonstrated extraordinary coherence times. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here, we present the coherent operation of in idual (31)P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered (28)Si substrate. The (31)P nuclear spin sets the new benchmark coherence time (>30 s with Carr-Purcell-Meiboom-Gill (CPMG) sequence) of any single qubit in the solid state and reaches >99.99% control fidelity. The electron spin CPMG coherence time exceeds 0.5 s, and detailed noise spectroscopy indicates that--contrary to widespread belief--it is not limited by the proximity to an interface. Instead, decoherence is probably dominated by thermal and magnetic noise external to the device, and is thus amenable to further improvement.
The residual charge state of tin implanted into sapphire
Publisher: Elsevier BV
Date: 02-1990
The annealing behavior of ion-implanted single crystals of the type YBa2 Cu3 Ox
Publisher: No publisher found
Date: 1989
Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors
Publisher: American Chemical Society (ACS)
Date: 28-06-2019
DOI: 10.1021/ACS.NANOLETT.9B01281
Abstract: Continued scaling of semiconductor devices has driven information technology into vastly erse applications. The performance of ultrascaled transistors is strongly influenced by local electric field and strain. As the size of these devices approaches fundamental limits, it is imperative to develop characterization techniques with nanometer resolution and three-dimensional (3D) mapping capabilities for device optimization. Here, we report on the use of single erbium (Er) ions as atomic probes for the electric field and strain in a silicon ultrascaled transistor. Stark shifts on the Er
Coherent electrical control of a single high-spin nucleus in silicon
Publisher: Springer Science and Business Media LLC
Date: 11-03-2020
Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films
Publisher: AIP Publishing
Date: 05-03-2014
DOI: 10.1063/1.4867481
Abstract: Vanadium dioxide (VO2) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator–to–metal transition, the phase transition in VO2 can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO2 with erbium ions (Er3+) and observe their combined properties. The first excited-state luminescence of Er3+ lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal lification and generation in silicon photonics. The incorporation of Er3+ into VO2 could therefore result in a novel photonic material capable of simultaneous optical switching and lification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO2 thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO2 by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ∼800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO2 thin films. We conclude that Er-implanted VO2 can function as an optical switch and lifier, but with reduced switching quality compared to pure VO2.
Microstructural characterization of iron ion implantation of silicon carbide
Publisher: Elsevier BV
Date: 03-1992
Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon
Publisher: Wiley
Date: 09-12-2011
Ion-channeling and Raman scattering study of damage accumulation in silicon
Publisher: AIP Publishing
Date: 20-01-2004
DOI: 10.1063/1.1636814
Abstract: Damage was introduced into Si(100) using 245 keV Si+ ions implanted to a wide range of doses with implant temperatures of −195, 25 or 100 °C. The accumulation of this damage was monitored with Rutherford backscattering and ion channeling (RBS-C) and by following the intensity and lineshape variation of the first-order (1-O) Raman peak of silicon. For all implant temperatures the RBS-C data showed the expected trend with dose. For −195 °C and room temperature implants, the decrease in intensity of the 1-O Raman peak shows a similar trend to the RBS-C data, but in each case the threshold dose is about a decade lower than its RBS-C counterpart. On implantation at 100 °C the sensitivity of the Raman spectra to low damage concentrations is more dramatic and decreases continuously over the full dose range, from 5×1012 to 2×1016 Si/cm2, examined in this study. This suggests that the intensity of the 1-O Raman peak is particularly sensitive to the types of defect structures that are stable in silicon during irradiation at elevated temperatures. The phonon confinement model is discussed in light of these results.
Exploring quantum chaos with a single nuclear spin
Publisher: American Physical Society (APS)
Date: 05-10-2018
Microbeam imaging at micron and submicron resolution
Publisher: Elsevier BV
Date: 04-1986
Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers
Publisher: AIP Publishing
Date: 15-08-2010
DOI: 10.1063/1.3465547
Abstract: The effect of hydrogen on the kinetics of solid phase epitaxy (SPE) have been studied in buried amorphous Si layers. The crystallization rate of the front amorphous/crystalline (a/c) interface is monitored with time resolved reflectivity. Secondary ion mass spectrometry (SIMS) is used to examine H implanted profiles at selected stages of the anneals. The H retardation of the SPE rate is determined up to a H concentration of 2.3×1020 cm−3 where the SPE rate decreases by 80%. Numerical simulations are performed to model the H diffusion, the moving a/c interfaces and the refinement of the H profile at these interfaces. Despite the high H concentration involved, a simple Fickian diffusion model results in good agreement with the SIMS data. The segregation coefficient is estimated to be 0.07 at 575 °C. A significant fraction of the H escapes from the a-Si layer during SPE especially once the two a/c interfaces meet which is signified by the lack of H-related voids after a subsequent high temperature anneal.
Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation
Publisher: AIP Publishing
Date: 07-09-2009
DOI: 10.1063/1.3224189
Abstract: The concentration dependence of H diffusion in amorphous Si (a-Si) formed by ion implantation is reported for implanted H profiles. An empirical relationship is proposed which relates the diffusion coefficient to the H concentration valid up to 0.3 at. %. B-enhanced H diffusion is observed and shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is applied to these data.
Graphene‐Enhanced Single Ion Detectors for Deterministic Near‐Surface Dopant Implantation in Diamond
Publisher: Wiley
Date: 08-09-2023
Structural differences between the glass state and ion-beam-amorphized states of lead pyrophosphate
Publisher: Elsevier BV
Date: 12-1990
A dressed spin qubit in silicon
Publisher: Springer Science and Business Media LLC
Date: 17-10-2017
Abstract: Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties-a different and easily tunable level splitting, faster control and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and assess its potential as a quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, frequency modulation of the driving field or a simple detuning pulse. We measure coherence times of and , one order of magnitude longer than those of the undressed spin. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.
Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
Publisher: AIP Publishing
Date: 05-2012
DOI: 10.1063/1.4710991
Abstract: The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175–525 °C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2 meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in s les implanted with either P or Ga. The anneal temperature at which the W line intensity is optimized is sensitive to the dopant concentration and type. Furthermore, dopants which are implanted but not activated prior to low temperature thermal processing are found to have a more detrimental effect on the resulting PL. Splitting of the X line (1039.8 meV) arising from implantation damage induced strain is also observed.
Controllable freezing of the nuclear spin bath in a single-atom spin qubit
Publisher: American Association for the Advancement of Science (AAAS)
Date: 03-07-2020
Abstract: The presence or absence of an electron controls the freezing of the nuclear spin bath coupled to a single-atom qubit in silicon.
Development Of nanowire devices with quantum functionalities
Publisher: IEEE
Date: 12-2014
Coherent control via weak measurements in P-31 single-atom electron and nuclear spin qubits
Publisher: American Physical Society (APS)
Date: 05-10-2018
Irradiation-Induced Modification of the Superconducting Properties of Heavily-Boron-Doped Diamond
Publisher: American Physical Society (APS)
Date: 05-10-2018
Single atom devices by ion implantation
Publisher: IOP Publishing
Date: 18-03-2015
DOI: 10.1088/0953-8984/27/15/154204
Abstract: To expand the capabilities of semiconductor devices for new functions exploiting the quantum states of single donors or other impurity atoms requires a deterministic fabrication method. Ion implantation is a standard tool of the semiconductor industry and we have developed pathways to deterministic ion implantation to address this challenge. Although ion straggling limits the precision with which atoms can be positioned, for single atom devices it is possible to use post-implantation techniques to locate favourably placed atoms in devices for control and readout. However, large-scale devices will require improved precision. We examine here how the method of ion beam induced charge, already demonstrated for the deterministic ion implantation of 14 keV P donor atoms in silicon, can be used to implant a non-Poisson distribution of ions in silicon. Further, we demonstrate the method can be developed to higher precision by the incorporation of new deterministic ion implantation strategies that employ on-chip detectors with internal charge gain. In a silicon device we show a pulse height spectrum for 14 keV P ion impact that shows an internal gain of 3 that has the potential of allowing deterministic implantation of sub-14 keV P ions with reduced straggling.
Bell's inequality violation with spins in silicon
Publisher: Springer Science and Business Media LLC
Date: 16-11-2016
Abstract: Bell's theorem proves the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states, and provides a single-number benchmark for the performance of devices that use such states for quantum computing. We demonstrate a Bell/ Clauser-Horne-Shimony-Holt inequality violation with Bell signals up to 2.70(9), using the electron and the nuclear spins of a single phosphorus atom embedded in a silicon nanoelectronic device. Two-qubit state tomography reveals that our prepared states match the target maximally entangled Bell states with >96% fidelity. These experiments demonstrate complete control of the two-qubit Hilbert space of a phosphorus atom and highlight the important function of the nuclear qubit to expand the computational basis and maximize the readout fidelity.
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
Publisher: IOP Publishing
Date: 18-03-2015
DOI: 10.1088/0953-8984/27/15/154205
Abstract: Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of in idual (31)P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized (31)P nucleus of a single P donor in isotopically purified (28)Si. We find average gate fidelities of 99.95% for the electron and 99.99% for the nuclear spin. These values are above certain error correction thresholds and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware and not the intrinsic behaviour of the qubit.
Solid-Phase Epitaxy
Publisher: Elsevier
Date: 2015
A solid-state quantum microscope for wavefunction control of an atom-based quantum dot device in silicon
Publisher: Springer Science and Business Media LLC
Date: 26-06-2023
Erratum: Time-Resolved Photoionization Detection of a Single Er3+Ion in Silicon (Nano Letters (2022) 22:1 (396-401) DOI: 10.1021/acs.nanolett.1c04072)
Publisher: American Chemical Society (ACS)
Date: 28-01-2022
Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond
Publisher: Elsevier BV
Date: 06-2021
High-field magnetotransport studies of surface-conducting diamonds
Publisher: American Physical Society (APS)
Date: 17-06-2022
MoO3 induces p-type surface conductivity by surface transfer doping in diamond
Publisher: Elsevier BV
Date: 04-2020
Helium Microprobe Analysis of Semiconductor Materials
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-1983
Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers
Publisher: American Physical Society (APS)
Date: 20-07-2007
Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures
Publisher: IEEE
Date: 12-2012
The amorphous-to-gamma transformation in ion implanted Al2O3
Publisher: Elsevier BV
Date: 02-1990
Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy
Publisher: Elsevier BV
Date: 02-2009
Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide
Publisher: AIP Publishing
Date: 05-06-2023
DOI: 10.1063/5.0154382
Abstract: Spin defects in solid-state sensors are a highly promising platform for quantum sensing, a field with far-reaching applications in a variety of industries. Here, we investigate the magnetic sensitivity of a spin defect ensemble detected electrically in a silicon carbide pn-junction diode utilizing the hyperfine-induced spin-mixing effect observed in the vicinity of zero magnetic field. To enhance the baseline sensitivity, we employ above bandgap optical excitation to generate additional electron-hole pairs as well as a balanced detection scheme to reject common-mode noise, with an ultimate sensitivity of 30 nT/Hz achieved. Both techniques are demonstrated to greatly enhance the magnetic sensitivity of the device by a total factor of ∼24, paving the way toward sub-nanotesla magnetic field sensitivities with electrical detection.
High-fidelity adiabatic inversion of a P-31 electron spin qubit in natural silicon
Publisher: AIP Publishing
Date: 03-03-2014
DOI: 10.1063/1.4867905
Optical addressing of an individual erbium ion in silicon
Publisher: Springer Science and Business Media LLC
Date: 05-2013
DOI: 10.1038/NATURE12081
Abstract: The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications under development. So far, it has been accomplished for only two defect centres in crystalline solids: phosphorus dopants in silicon, for which electrical read-out based on a single-electron transistor is used, and nitrogen-vacancy centres in diamond, for which optical read-out is used. A spin read-out fidelity of about 90 per cent has been demonstrated with both electrical read-out and optical read-out however, the thermal limitations of the former and the poor photon collection efficiency of the latter make it difficult to achieve the higher fidelities required for quantum information applications. Here we demonstrate a hybrid approach in which optical excitation is used to change the charge state (conditional on its spin state) of an erbium defect centre in a silicon-based single-electron transistor, and this change is then detected electrically. The high spectral resolution of the optical frequency-addressing step overcomes the thermal broadening limitation of the previous electrical read-out scheme, and the charge-sensing step avoids the difficulties of efficient photon collection. This approach could lead to new architectures for quantum information processing devices and could drastically increase the range of defect centres that can be exploited. Furthermore, the efficient electrical detection of the optical excitation of single sites in silicon represents a significant step towards developing interconnects between optical-based quantum computing and silicon technologies.
Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions
Publisher: Wiley
Date: 12-11-2022
Abstract: Silicon chips containing arrays of single dopant atoms can be the material of choice for classical and quantum devices that exploit single donor spins. For ex le, group‐V donors implanted in isotopically purified 28 Si crystals are attractive for large‐scale quantum computers. Useful attributes include long nuclear and electron spin lifetimes of 31 P, hyperfine clock transitions in 209 Bi or electrically controllable 123 Sb nuclear spins. Promising architectures require the ability to fabricate arrays of in idual near‐surface dopant atoms with high yield. Here, an on‐chip detector electrode system with 70 eV root‐mean‐square noise (≈20 electrons) is employed to demonstrate near‐room‐temperature implantation of single 14 keV 31 P + ions. The physics model for the ion–solid interaction shows an unprecedented upper‐bound single‐ion‐detection confidence of 99.85 ± 0.02% for near‐surface implants. As a result, the practical controlled silicon doping yield is limited by materials engineering factors including surface gate oxides in which detected ions may stop. For a device with 6 nm gate oxide and 14 keV 31 P + implants, a yield limit of 98.1% is demonstrated. Thinner gate oxides allow this limit to converge to the upper‐bound. Deterministic single‐ion implantation can therefore be a viable materials engineering strategy for scalable dopant architectures in silicon devices.
Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation
Publisher: American Physical Society (APS)
Date: 06-06-2011
Lattice location of nickel in diamond by RBS channelling and PIXE
Publisher: Wiley
Date: 28-10-2010
Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium
Publisher: IEEE
Date: 12-2010
Formation of carbon nanoclusters by implantation of keV carbon ions in fused silica followed by thermal annealing
Publisher: SPIE
Date: 23-02-2005
DOI: 10.1117/12.582855
Vanadium dioxide thickness effects on tunable optical antennas
Publisher: SPIE
Date: 07-12-2013
DOI: 10.1117/12.2033739
Deep-level transient spectroscopy study of channelled boron implantation in silicon
Publisher: IEEE
Date: 12-2010
Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars
Publisher: AIP Publishing
Date: 08-10-2021
DOI: 10.1063/5.0055100
Abstract: Color centers that emit light at telecommunication wavelengths are promising candidates for future quantum technologies. A pressing challenge for the broad use of these color centers is the typically low collection efficiency from bulk s les. Here, we demonstrate enhancements of the emission collection efficiency for Er3+ incorporated into 4H-SiC surface nano-pillars fabricated using a scalable top-down approach. Optimal Er ion implantation and annealing strategies are investigated in detail. The substitutional fraction of Er atoms in the SiC lattice is closely correlated with the peak photoluminescence intensity. This intensity is further enhanced via spatial wave-guiding once the surface is patterned with nano-pillars. These results have broad applicability for use with other color centers in SiC and also demonstrate a step toward a scalable protocol for fabricating photonic quantum devices with enhanced emission characteristics.
Characterisation of Ti:sapphire layers synthesized energy ion implantation
Publisher: IEEE
Date: 2002
Advanced germanium devices: The development of materials and processing
Publisher: IEEE
Date: 12-2010
Optical switching and photoluminescence in erbium implanted vanadium dioxide thin films
Publisher: IEEE
Date: 12-2012
Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions
Publisher: Elsevier BV
Date: 2003
Real-time in situ study of hydrogen diffusion in amorphous Si formed by ion implantation
Publisher: Elsevier BV
Date: 11-2011
Deep level transient spectroscopy study of defects at Si/SiO2 and Si/Si3 N4 interfaces
Publisher: IEEE
Date: 02-2010
Hydrogen platelet evolution in mechanically strained silicon
Publisher: IEEE
Date: 12-2010
Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium
Publisher: American Physical Society (APS)
Date: 16-06-2008
Raman study on the phase transformations of the meta-stable phases of Si induced by indentation
Publisher: IEEE
Date: 12-2012
Dopant effects on solid phase epitaxy in silicon and germanium
Publisher: AIP Publishing
Date: 02-2012
DOI: 10.1063/1.3682532
Abstract: The kinetics of dopant-enhanced solid phase epitaxy (SPE) are studied in amorphous silicon (a-Si) and germanium (a-Ge) layers formed by ion implantation. Implanted Sb dopants into a-Ge up to a concentration of 1 × 1020 cm−3 are considered and compared to As implanted layers at similar concentrations. Although an active Sb concentration above the solubility limit is achieved, a significant portion of the implanted atoms are not. P, As, and B enhanced SPE rates in Si from the literature are also considered. The relative velocities of P and As in Si is similar to that of As and Sb in Ge. Theoretical predictions using a simple form of the generalized Fermi level shifting model, which incorporates both dopant and dopant-induced stress effects, is shown to agree well with the data. A single set of two parameters are determined, which describe the dopant enhanced SPE data well independent of dopant species and concentration.
Silicon–Aluminum Phase-Transformation-Induced Superconducting Rings
Publisher: American Chemical Society (ACS)
Date: 27-12-2023
Palladium forms Ohmic contact on hydrogen-terminated diamond down to 4 K
Publisher: AIP Publishing
Date: 16-03-2020
DOI: 10.1063/1.5141775
Abstract: A hydrogen-terminated diamond (H-terminated diamond) surface supports a two-dimensional (2D) p-type surface conductivity when exposed to the atmosphere, as a result of the surface transfer doping process. The formation of reliable Ohmic contacts that persist to cryogenic temperature is essential for the exploration of quantum transport in the diamond 2D conducting channel. Herein, the contact properties of Pd on H-terminated diamond have been fully investigated down to 4 K using transmission line method measurements. Pd is shown to form an Ohmic contact on H-terminated diamond with linear I–V characteristics and low specific contact resistance in the range of (8.4 ± 1) ×10−4 Ω·cm2 to (1.3 ± 0.2) ×10−3 Ω·cm2 for the temperature range of 300 K–4 K. This is in stark contrast to reference devices with Au/Pt/Ti contacts, which exhibit a significant temperature dependence and non-Ohmic behavior at low temperature. Using 2D thermionic emission theory, a negative Schottky barrier height (SBH), − 23 ± 1 meV, between Pd and H-terminated diamond has been determined, in comparison to a positive SBH of 42 ± 1 meV for the Au/Pt/Ti/H-terminated diamond interface. These results show that Pd serves as an excellent candidate for forming reliable Ohmic contacts on H-terminated diamond for enabling precise electrical transport measurements at cryogenic temperature.
The crystallisation of deep amorphous wells in silicon produced by ion implantation
Publisher: Elsevier BV
Date: 04-2001
Thermal evolution of the indentation-induced phases of silicon
Publisher: AIP Publishing
Date: 09-09-2019
DOI: 10.1063/1.5108751
Abstract: Novel phases of Si that are predicted to have industrially desirable properties can be recovered after indentation-induced pressure. However, the thermal stability of these phases is not well understood. Furthermore, in the past, different methods of annealing have resulted in conflicting reports on annealing stability and transformation pathways. This study investigates the thermal stability of several metastable Si phases called r8-Si, bc8-Si, hd-Si, and Si-XIII under furnace annealing, incremental annealing, and laser annealing using Raman microspectroscopy and electron diffraction. The temperature range of stability for these metastable phases is thus determined. Of particular interest, hd-Si is stable to a much higher temperature than previously reported, being the predominant phase observed in this study after annealing at 450 °C. This finding was enabled through a new method for confirming the presence of hd-Si by detailed electron diffraction. This high thermal stability generates renewed interest in exploiting this phase for industrial applications, such as strain-tailored solar absorption.
Engineering chromium-related single photon emitters in single crystal diamonds
Publisher: IOP Publishing
Date: 14-04-2011
Deterministic Atom Placement by Ion Implantation: Few and Single Atom Devices for Quantum Computer Technology
Publisher: IEEE
Date: 09-2017
Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces
Publisher: Wiley
Date: 05-2023
Kinetics of Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Buried Amorphous Si Layers
Publisher: Springer Science and Business Media LLC
Date: 1996
DOI: 10.1557/PROC-438-119
Abstract: The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers produced by ion implantation. Buried a-Si layers formed by self-ion implantation provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si, free from the rate-retarding effects of H. For the first time, dopant-enhanced SPE rates have been measured under these H-free conditions. Buried a- Si layers containing uniform As concentration profiles ranging from 1–16.1 × 10 19 As.cm -3 were produced by multiple-energy ion implantation and time resolved reflectivi[ty was used to measure SPE rates over the temperature range 480–660°C. In contrast to earlier studies, the dopant-enhanced SPE rate is found to depend linearly on the As concentration over the entire concentration range measured. The SPE rate can be expressed in the form, v / v i ( T ) = 1 + N /[ N o exp(−Λ E / kT )], where v i ( T ) is the intrinsic SPE rate, N is the dopant concentration and N o = 1.2 × 10 21 cm -3 , ΔE = 0.21 eV.
Silver intercalation in titanium disulphide
Publisher: Elsevier BV
Date: 09-1999
Stimulated emission from nitrogen-vacancy centres in diamond
Publisher: Springer Science and Business Media LLC
Date: 27-01-2017
DOI: 10.1038/NCOMMS14000
Optically Active Defects at the
Si C
Publisher:
American Physical Society (APS)
Date:
11-10-2019
Publisher: American Physical Society (APS)
Date: 11-10-2019
Kinetics of arsenic-enhanced solid phase epitaxy in silicon
Publisher: AIP Publishing
Date: 31-03-2004
DOI: 10.1063/1.1682672
Abstract: The kinetics of intrinsic and arsenic-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers in which crystallization occurs free from the rate retarding effects of hydrogen. Surface a-Si layers, where H infiltration can occur during crystallization, have also been studied. A single 1.45×1016 As/cm2 implant at 1200 keV was used to form an As concentration profile with a peak concentration of 3×1020 As/cm3 centered at 8000 Å beneath the crystal surface, allowing many different enhanced SPE rates to be examined simultaneously. The SPE rate through this profile and its intrinsic counterpart were measured using time-resolved reflectivity. The effects of hydrogen on the SPE rate can be determined by a comparison between the buried and surface a-Si layers. For the surface a-Si layers, it was found that the As-enhanced SPE rate versus depth curve is offset with respect to the concentration profile. We attribute this offset to the H infiltration in the case of the surface a-Si layer.
Engineering long spin coherence times of spin–orbit qubits in silicon
Publisher: Springer Science and Business Media LLC
Date: 20-07-2020
Ion-implantation and analysis for doped silicon slot waveguides
Publisher: IEEE
Date: 12-2012
Nanomechanical Sensing Using Spins in Diamond
Publisher: American Chemical Society (ACS)
Date: 13-02-2017
DOI: 10.1021/ACS.NANOLETT.6B04544
Abstract: Nanomechanical sensors and quantum nanosensors are two rapidly developing technologies that have erse interdisciplinary applications in biological and chemical analysis and microscopy. For ex le, nanomechanical sensors based upon nanoelectromechanical systems (NEMS) have demonstrated chip-scale mass spectrometry capable of detecting single macromolecules, such as proteins. Quantum nanosensors based upon electron spins of negatively charged nitrogen-vacancy (NV) centers in diamond have demonstrated erse modes of nanometrology, including single molecule magnetic resonance spectroscopy. Here, we report the first step toward combining these two complementary technologies in the form of diamond nanomechanical structures containing NV centers. We establish the principles for nanomechanical sensing using such nanospin-mechanical sensors (NSMS) and assess their potential for mass spectrometry and force microscopy. We predict that NSMS are able to provide unprecedented AC force images of cellular biomechanics and to not only detect the mass of a single macromolecule but also image its distribution. When combined with the other nanometrology modes of the NV center, NSMS potentially offer unparalleled analytical power at the nanoscale.
Strong and tunable spin-orbit coupling in a two-dimensional hole gas in ionic-liquid gated diamond devices
Publisher: American Chemical Society (ACS)
Date: 26-05-2016
DOI: 10.1021/ACS.NANOLETT.6B01155
Abstract: Hydrogen-terminated diamond possesses due to transfer doping a quasi-two-dimensional (2D) hole accumulation layer at the surface with a strong, Rashba-type spin-orbit coupling that arises from the highly asymmetric confinement potential. By modulating the hole concentration and thus the potential using an electrostatic gate with an ionic-liquid dielectric architecture the spin-orbit splitting can be tuned from 4.6-24.5 meV with a concurrent spin relaxation length of 33-16 nm and hole sheet densities of up to 7.23 × 10(13) cm(-2). This demonstrates a spin-orbit interaction of unprecedented strength and tunability for a 2D hole system at the surface of a wide band gap semiconductor. With a spin relaxation length that is experimentally accessible using existing nanofabrication techniques, this result suggests that hydrogen-terminated diamond has great potential for the study and application of spin transport phenomena.
Ti:sapphire formation via the co-implantation of Ti and O ions into sapphire
Publisher: Elsevier BV
Date: 04-2001
Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si
Publisher: AIP Publishing
Date: 16-03-2016
DOI: 10.1063/1.4944321
Abstract: The redistribution of hydrogen during solid phase epitaxial regrowth (SPER) of preamorphized silicon has been experimentally investigated, modeled, and simulated for different H concentrations and temperatures. H was introduced by H implantation and/or infiltration from the s le surface during partial thermal anneals in air in the 520–620 °C temperature range. We characterized the time evolution of the H redistribution by secondary ion mass spectrometry and time resolved reflectivity. The good agreement between all experimental data and the simulations by means of full rate equation numerical calculations allows the quantitative assessment of all the phenomena involved: in-diffusion from annealing atmosphere and the H effect on the SPER rate. We describe the temperature dependence of microscopic segregation of H at the amorphous/crystal (a-c) interface. Only a fraction of H atoms pushed by the a-c interface can be incorporated into the crystal bulk. We propose an energetic scheme of H redistribution in amorphous Si. The segregation of H at the a-c interface is also considered for (110) and (111) orientated substrates. Our description can also be applied to other material systems in which redistribution of impurities during a solid-solid phase transition occurs.
Time resolved reflectivity measurements of the amorphous-to-gamma and gamma-to-alpha phase transitions in ion-implanted Al2O3
Publisher: Elsevier BV
Date: 06-1994
Scalable quantum computing with ion-implanted dopant atoms in Silicon
Publisher: IEEE
Date: 12-2019
Characterisation of nickel germanide formed on amorphous and crystalline germanium
Publisher: IEEE
Date: 08-2014
Piezoresistance in Defect-Engineered Silicon
Publisher: American Physical Society (APS)
Date: 25-01-2021
Donor-based qubits for quantum computing in silicon
Publisher: AIP Publishing
Date: 09-2021
DOI: 10.1063/5.0060957
Abstract: Spin-qubits based on impurities such as phosphorus in silicon (Si) have attractive attributes for the development of quantum computing devices. Very long coherence times can be achieved for donor-based qubits in Si due to the availability of isotopically pure 28Si layers where the 29Si atoms, which otherwise lead to decoherence, are largely absent in the active region of the device. Well-behaved single donor qubits in Si can routinely be formed using ion implantation, and the key performance criteria needed to demonstrate the basis of a viable platform for quantum computing have been achieved. The crucial next stage of development is to demonstrate suitable pathways for scale-up that allow patterned arrays of donor qubits to be controllably coupled and that are robust against the inherent donor placement tolerances and material processing constraints that exist. Here, we review progress on the fabrication and measurement of donor-based qubits in silicon via the ion implantation pathway and discuss the key developmental milestones that have been achieved. We also provide an overview of the key scale-up strategies that are being actively pursued to take donor-based quantum computing in Si to the next stage.
Epitaxial Formation of SiC on (100) Diamond
Publisher: American Chemical Society (ACS)
Date: 12-06-2020
The potential for the fabrication of wires embedded in the crystalline silicon substrate using the solid phase segregation of gold in crystallising amorphous volumes
Publisher: Elsevier BV
Date: 05-2004
In situ amplification of spin echoes within a kinetic inductance parametric amplifier
Publisher: American Association for the Advancement of Science (AAAS)
Date: 10-03-2023
Abstract: The use of superconducting microresonators together with quantum-limited Josephson parametric lifiers has enhanced the sensitivity of pulsed electron spin resonance (ESR) measurements by more than four orders of magnitude. So far, the microwave resonators and lifiers have been designed as separate components due to the incompatibility of Josephson junction–based devices with magnetic fields. This has produced complex spectrometers and raised technical barriers toward adoption of the technique. Here, we circumvent this issue by coupling an ensemble of spins directly to a weakly nonlinear and magnetic field–resilient superconducting microwave resonator. We perform pulsed ESR measurements with a 1-pL mode volume containing 6 × 10 7 spins and lify the resulting signals within the device. When considering only those spins that contribute to the detected signals, we find a sensitivity of 2.8 × 1 0 3 spins / Hz for a Hahn echo sequence at a temperature of 400 mK. In situ lification is demonstrated at fields up to 254 mT, highlighting the technique’s potential for application under conventional ESR operating conditions.
Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si
Publisher: American Physical Society (APS)
Date: 22-12-2017
The effect of potassium on the rate of solid phase epitaxy in silicon
Publisher: Elsevier BV
Date: 05-2002
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