ORCID Profile
0000-0002-8970-4703
Current Organisations
UNSW Sydney
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Solar Analytics Pty Ltd
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Publisher: Elsevier BV
Date: 05-1996
Publisher: Elsevier BV
Date: 1995
Publisher: AIP Publishing
Date: 15-08-1996
DOI: 10.1063/1.363036
Abstract: By using a contactless double crystal x-ray diffraction technique with either photoluminescence or infrared intersubband absorption and theoretical calculations, it is possible to determine the dimensions and composition of a three layered multiple quantum well (MQW) structure accurately. A strained AlGaAs/AlAs/InGaAs double barrier (DB) three layered MQW structure was used to demonstrate this. Moreover, it is shown that this structure is well suited for infrared photodetection in the 3 μm wavelength region, based on intersubband absorption. The compositions and thicknesses evaluated are in good agreement, and transmission electron microscopy is utilized to confirm the thicknesses.
Publisher: Elsevier BV
Date: 10-2020
Publisher: Elsevier BV
Date: 10-2011
Publisher: Elsevier BV
Date: 2018
Publisher: Wiley
Date: 20-09-2012
DOI: 10.1002/PIP.2282
Publisher: American Vacuum Society
Date: 1996
DOI: 10.1116/1.589018
Abstract: X-ray photoelectron spectroscopy with argon ion depth profiling was employed to investigate sulfur deposition from a standard 3H2SO4:H2O2:H2O etchant onto (100) GaAs. From these experiments it appears that etching with 3H2SO4:H2O2:H2O leaves a mixed sulfide/oxide layer, with free sulfur at the top surface of this layer. The sulfide within the layer was found to be bound to gallium, and recognition of the presence of sulfur allowed the clarification of the Ga(3d) photoelectron peak position for Ga2O3. No evidence of sulfate formation was found. Removal of the sulfur contamination using a solution of HCl:H2O was investigated. Also, atmospheric contamination of s les exposed to room conditions for six months was observed.
Publisher: IOP Publishing
Date: 09-1994
Publisher: Institution of Engineering and Technology (IET)
Date: 20-07-1995
DOI: 10.1049/EL:19950876
Publisher: Elsevier BV
Date: 03-2014
Publisher: Springer Science and Business Media LLC
Date: 19-06-2020
DOI: 10.1038/S41467-020-16819-Z
Abstract: MLKL is the essential effector of necroptosis, a form of programmed lytic cell death. We have isolated a mouse strain with a single missense mutation, Mlkl D139V , that alters the two-helix ‘brace’ that connects the killer four-helix bundle and regulatory pseudokinase domains. This confers constitutive, RIPK3 independent killing activity to MLKL. Homozygous mutant mice develop lethal postnatal inflammation of the salivary glands and mediastinum. The normal embryonic development of Mlkl D139V homozygotes until birth, and the absence of any overt phenotype in heterozygotes provides important in vivo precedent for the capacity of cells to clear activated MLKL. These observations offer an important insight into the potential disease-modulating roles of three common human MLKL polymorphisms that encode amino acid substitutions within or adjacent to the brace region. Compound heterozygosity of these variants is found at up to 12-fold the expected frequency in patients that suffer from a pediatric autoinflammatory disease, chronic recurrent multifocal osteomyelitis (CRMO).
Publisher: Elsevier BV
Date: 12-2004
Publisher: IOP Publishing
Date: 07-1993
Publisher: Wiley
Date: 24-02-2017
DOI: 10.1002/PIP.2871
Publisher: Elsevier BV
Date: 12-2013
Publisher: MDPI AG
Date: 06-12-2022
DOI: 10.3390/EN15239257
Abstract: Australia’s electricity networks are experiencing low demand during the day due to excessive residential solar export and high demand during the evening on days of extreme temperature due to high air conditioning use. Pre-cooling and solar pre-cooling are demand-side management strategies with the potential to address both these issues. However, there remains a lack of comprehensive studies into the potential of pre-cooling and solar pre-cooling due to a lack of data. In Australia, however, extensive datasets of household energy measurements, including consumption and generation from rooftop solar, obtained through retailer-owned smart meters and household-owned third-party monitoring devices, are now becoming available. However, models presented in the literature which could be used to simulate the cooling energy in residential homes are temperature-based, requiring indoor temperature as an input. Temperature-based models are, therefore, precluded from being able to use these newly available and extensive energy-based datasets, and there is a need for the development of new energy-based simulation tools. To address this gap, a novel data-driven model to estimate the cooling energy in residential homes is proposed. The model is temperature-independent, requiring only energy-based datasets for input. The proposed model was derived by an analysis comparing the internal free-running and air conditioned temperature data and the air conditioning data for template residential homes generated by AccuRate, a building energy simulation tool. The model is comprised of four linear equations, where their respective slope intercepts represent a thermal efficiency metric of a thermal zone in the template residential home. The model can be used to estimate the difference between the internal free-running, and air conditioned temperature, which is equivalent to the cooling energy in the thermal zone. Error testing of the model compared the difference between the estimated and AccuRate air conditioned temperature and gave average CV-RMSE and MAE values of 22% and 0.3 °C, respectively. The significance of the model is that the slope intercepts for a template home can be applied to an actual residential home with equivalent thermal efficiency, and a pre-cooling or solar pre-cooling analysis is undertaken using the model in combination with the home’s energy-based dataset. The model is, therefore, able to utilise the newly available extensive energy-based datasets for comprehensive studies on pre-cooling and solar pre-cooling of residential homes.
Publisher: Elsevier BV
Date: 11-2021
Publisher: EDP Sciences
Date: 2013
Publisher: AIP Publishing
Date: 03-1994
DOI: 10.1063/1.356244
Abstract: Heteroepitaxial InAsSb is routinely prepared on InAs, InSb, or GaAs substrates under conditions favorable to dislocation formation, since the binary components are lattice mismatched by about 7.4%, and the ternary are mismatched to GaAs by between 7.2% and 14.5%, depending on composition. We here extend the description of electron scattering in InAsSb to include the effects of grain boundaries and dislocations. Comparison with experiment confirms that dislocation scattering has a strong effect on transport, while alloy scattering limits mobility in ternary s les grown with a minimum of defects.
Publisher: IEEE
Date: 06-2018
Publisher: IEEE
Date: 06-2011
Publisher: IEEE
Date: 06-2013
Publisher: Elsevier BV
Date: 02-2022
Publisher: Wiley
Date: 11-03-2022
DOI: 10.1002/PIP.3553
Abstract: The industry for producing silicon solar cells and modules has grown remarkably over the past decades, with more than a 100‐fold reduction in price over the past 45 years. The main solar cell fabrication technology has shifted over that time and is currently dominated by the passivated emitter and rear cell (PERC). Other technologies are expected to increase in market share, including tunnel‐oxide passivated contact (TOPCon) and heterojunction technology (HJT). In this paper, we examine the cost potential for using atomic layer deposition (ALD) to form transition metal oxide (TMO) layers ( , and aluminium‐doped zinc oxide [AZO]) to use as lower cost alternatives of the p‐doped, n‐doped and indium tin oxide (ITO) layers, respectively, the layers normally used in HJT solar cells. Using a bottom‐up cost and uncertainty model with equipment cost data and process experience in the lab, we find that the production cost of these variations will likely be lower per wafer than standard HJT, with the main cost drivers being the cost of the ALD precursors at high‐volume production. We then considered what efficiency is required for these sequences to be cost effective in $/W and discuss whether these targets are technically feasible. This work motivates further work in developing these ALD TMO processes to increase their efficiency towards their theoretical limits to take advantage of the processing cost advantage.
Publisher: Elsevier BV
Date: 04-1993
Publisher: Elsevier BV
Date: 02-1995
Publisher: Elsevier BV
Date: 12-1995
Publisher: AIP Publishing
Date: 15-08-1992
DOI: 10.1063/1.351700
Abstract: The electron mobility in InAs1−xSbx is calculated for an ionized impurity density between 5× 1014 cm−3 and 1 × 1017 cm−3 at 77 K. The various methods of calculating electron mobility are discussed and their respective merits and limitations summarized. In general, alloy scattering is the mobility limiting process at low carrier density (n ≤ 1015 cm−3) while ionized impurity scattering is important at higher carrier density. The effect of compensation (NA/ND) on low field drift mobility is also calculated for a range of carrier concentrations at x=0.1, 0.6, 0.9, and 1.0 compositions of particular technological significance. Compensation is found to degrade electron mobility quite significantly in all cases. The calculations at x=1.0 (InSb) are also found to be in good agreement with available experimental data.
Publisher: Elsevier BV
Date: 06-2020
Publisher: Elsevier BV
Date: 04-2022
Publisher: AIP Publishing
Date: 15-06-2010
DOI: 10.1063/1.3429206
Abstract: The minority carrier lifetimes of a variety of polycrystalline silicon solar cells are estimated from temperature-dependent quantum efficiency data. In most cases the lifetimes have Arrhenius temperature dependences with activation energies of 0.17–0.21 eV near room temperature. There is also a rough inverse relationship between lifetime and the base dopant concentration. Judging by this inverse law, the activation energies of the lifetimes, and the absence of plateau behavior in the lifetimes of the higher doped cells at low temperatures, it is inferred that the dominant recombination pathway involves the electronic transition between shallow states which are 0.05–0.07 eV below the conduction band and 0.06–0.09 eV above the valence band, respectively, consistent with the shallow bands in silicon dislocations. The modeled recombination behavior implies that deep levels do not significantly affect the lifetimes for most of the cells at and below room temperature.
Publisher: Elsevier BV
Date: 10-1988
Publisher: Springer Science and Business Media LLC
Date: 2016
DOI: 10.1557/OPL.2015.364
Abstract: The Australian Centre for Advanced Photovoltaics (ACAP) co-ordinates the activities of the six Australian research institutions and a group of industrial partners in the Australia-US Institute for Advanced Photovoltaics (AUSIAPV) to develop the next generations of photovoltaic device technology and to provide a pipeline of opportunities for performance increase and cost reduction. AUSIAPV links ACAP with US-based partners. These national and international research collaborations provide a pathway for highly visible, structured photovoltaic research collaboration between Australian and US researchers, institutes and agencies with significant joint programs based on the clear synergies between the participating organizations. The research program is organized in five collaborative Program Packages (PPs). PP1 deals with silicon wafer-based cells, focusing on three main areas: cells from solar grade silicon, rear contact and silicon-based tandem cells. PP2 involves research into a range of organic solar cells, organic/inorganic hybrid cells, "earth abundant" thin-film materials and "third generation" approaches. PP3 is concerned with optics and characterization. PP4 will deliver a substantiated methodology for assessing manufacturing costs of the different technologies and PP5 involves education, training and outreach. The main research topics, results and plans for the future are presented.
Publisher: IEEE
Date: 06-2010
Publisher: American Physical Society (APS)
Date: 15-05-1992
Publisher: Springer Science and Business Media LLC
Date: 30-04-2018
Publisher: Springer Science and Business Media LLC
Date: 1992
DOI: 10.1557/PROC-242-395
Abstract: The nitrides of Al, Ga and In are III-V compound semiconductors with properties more closely akin to those of the II-VI system and applications problems of similar type. All three have wide, direct band gaps and relatively light, therefore mobile, electrons. Less encouragingly, native point defects appear to play a significant role in both optical and electronic properties. Both experiment and theory point to a triplet of donor states associated with the nitrogen vacancy, with deep compensating centres deriving from antisite defects. The ionic radius of the metal then seems to determine the conductivity of as-grown material, indium is reluctant to occupy nitrogen sites while aluminium does so readily and gallium is equivocal. Thus the upper donor level of InN is not depleted and n-type behaviour is always observed, the equivalent level in AIN is always overcompensated and the remaining donor levels are too deep to contribute free electrons at normal temperatures so that the material is consistently insulating. GaN may be n-type or semi-insulating since compensation ratios either side of unity appear to be possible, depending on the method of growth. In this paper we review the evidence, both optical and electrical, for the existence, nature and energetic location of the four basic point defects in each nitride, noting in particular that all four broad luminescence bands in GaN:Zn can be accounted for by the presence of nitrogen on gallium sites and of nitrogen vacancies.
Publisher: Elsevier BV
Date: 1997
Publisher: Wiley
Date: 12-01-2011
DOI: 10.1002/PIP.1089
Publisher: SPIE
Date: 15-03-2013
DOI: 10.1117/12.2002247
Publisher: Elsevier BV
Date: 04-2022
Publisher: AIP Publishing
Date: 15-03-1991
DOI: 10.1063/1.348499
Abstract: The significance of alloy scattering on the electron mobility of InAs1−xSbx is studied in detail. Since little experimental data are available for the InAs1−xSbx compound, calculations of the electron mobility of the binary InAs and InSb semiconductors are first evaluated from the average momentum relaxation times, 〈τm〉 of the in idual mechanisms (comprising ionized and neutral impurities, acoustic phonon deformation potential and piezoelectric, optical phonon deformation potential and polar) so that they can be compared to available experimental results. Having ensured that the calculated data are in good agreement with the experimental results in these binary compounds, the electron mobility of the ternary, InAs1−xSbx as a function of x at 77 K and 300 K is calculated by introducing an alloy scattering term. At 77 K, for a total doping concentration of ≂1017 cm−3, the electron mobility of InAs1−xSbx is limited by ionized impurity scattering and alloy scattering is insignificant. However, for doping concentration of ≂1015 cm−3, alloy scattering is found to be the most significant process from about x=0.1 to 0.8. At 300 K the alloy scattering reduces the total electron mobility from between a few percent at x=0.15 to a maximum of about 11% for x=0.60. It is observed that alloy scattering is greatest at x=0.15 but it still is about 11% of the total electron mobility at this composition. The alloy mobilities at 77 K for x=0.6 and x=0.15 are 1.28×106 cm2 V−1s−1 and 7.96×105 cm2 V−1s−1, respectively. The mobilities at x=0.60 are further evaluated as a function of the doping carrier concentration at 77 and 300 K. It is found that alloy scattering becomes increasingly significant for lightly doped semiconductors at low temperatures.
Publisher: Elsevier BV
Date: 11-2022
Publisher: Elsevier BV
Date: 10-2023
Publisher: Elsevier BV
Date: 06-2012
Publisher: IEEE
Date: 06-2010
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2014
Publisher: IEEE
Date: 06-2014
Publisher: Elsevier BV
Date: 03-1996
Start Date: 2008
End Date: 2013
Funder: Australian Research Council
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