ORCID Profile
0000-0002-6240-7821
Current Organisations
Macquarie University
,
UNSW Australia
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Photonic and electro-optical devices sensors and systems (excl. communications) | Nanomaterials | Nanotechnology | Photovoltaic devices (solar cells)
Publisher: American Chemical Society (ACS)
Date: 15-08-2022
Publisher: Springer Nature Switzerland
Date: 2023
Publisher: Wiley
Date: 02-2017
Publisher: IEEE
Date: 06-2010
Publisher: WIP
Date: 2016
Publisher: IEEE
Date: 06-2016
Publisher: Wiley
Date: 25-09-2022
Abstract: Phosphorous dopant diffusion profiles feature in many silicon semiconductor devices, including the vast majority of silicon solar cells. Accurate spatially resolved dopant profiling is crucial for understanding the performance of these diffused regions, however, it is very challenging to obtain such profiles in non‐planar s les. Scanning electron microscopy for dopant contrast imaging (SEMDCI), where the secondary electron (SE) image contrast is used to determine the dopant level of a semiconductor s le, is an ideal candidate for Si dopant profiling, especially for silicon s les with surface nanotexturing or black silicon (BSi) technology. However, in previous SEMDCI studies, the dopant concentration of heavily doped n‐type layers in silicon s les have shown a poor correlation with the SE signal contrast. In this work, 1) good contrast for n‐type diffused silicon without contrast‐enhancing techniques 2) a new contrast definition to account for imaging non‐uniformities 3) clear correlations between SE contrast and s le work function for phosphorus‐diffused planar silicon specimens across a wide range of emitter profiles 4) implementation of an empirical baseline correction to normalize scanning electron microscopy image condition variations, are presented. This SEMDCI method is subsequently used for the first time to obtain 2D electron concentration maps for both planar and BSi s les.
Publisher: SPIE
Date: 22-12-2015
DOI: 10.1117/12.2202453
Publisher: Elsevier BV
Date: 03-2022
DOI: 10.1016/J.ULTRAMIC.2021.113458
Abstract: The xenon plasma focused ion beam and scanning electron microscopy (PFIB-SEM) system is a promising tool for 3D tomography of nano-scale materials, including nanotextured black silicon (BSi), whose topography is difficult to measure with conventional microscopy techniques. Advantages of PFIB-SEM include high material removal rates, precise control of milling parameters and automated slice-and-view procedures. However, there is no universal s le preparation procedure nor is there an established ideal workflow for the PFIB-SEM slice-and-view process. This work demonstrates that specimen preparation, including the orientation of the volume of interest, is critical for the quality of the final reconstructed 3D model. It thoroughly explores three unique configurations incrementally optimized for higher total throughput. All three s ling configurations are applied to a resin-embedded BSi s le to determine the most favourable workflow and highlight each approach's advantages and disadvantages. The reconstructed 3D models of the BSi surface obtained are shown to be qualitatively closer to the topography measured directly by SEM. The height distribution data extracted from the rendered 3D models reveal a higher structure depth compared to that obtained from an atomic force microscopy measurement. Furthermore, the work demonstrates how s les with different rigidity react to long-term ion-beam interaction, as both amorphous (resin) and crystalline (Si) material is present in the tested specimen. This study improves the understanding of s le-beam interaction and broadens the utility of the 3D PFIB-SEM for more complicated s le structures.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2021
Publisher: IEEE
Date: 06-2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2021
Publisher: WIP
Date: 2017
Publisher: Springer Science and Business Media LLC
Date: 19-11-2017
Publisher: Elsevier BV
Date: 12-2016
Publisher: IEEE
Date: 14-06-2020
Publisher: Springer Science and Business Media LLC
Date: 2012
DOI: 10.1557/OPL.2012.693
Abstract: The drive to reduce the thickness of solar cells is putting ever greater demands on light-trapping techniques. Techniques are required to improve absorption of light within the semiconductor, while not adversely affecting the electrical properties of the device. Conventional diffraction gratings can scatter visible and near-infrared photons into large angles, which get trapped in the silicon layer by total internal reflection. However, diffraction gratings typically have large feature sizes and so increase the overall surface area of a solar cell compared to the planar case. A periodic arrangement of metal nanoparticles acts as a diffraction grating, but an over-coated semiconductor will have a similar surface area to a planar layer due a combination of a low particle height and low surface coverage. Random arrays of identical metal nanoparticles feature Lorentzian scattering peaks that can be tuned by modifying the size and shape of the particle. Periodic arrays have much more complicated scattering peaks, due to the enhancement and suppression of scattering at different wavelengths caused by the constructive and destructive interference between each nanoparticle. In effect the scattering spectrum of the in idual nanoparticle is modified by the diffractive orders of the array, and so both parameters must be optimized together. We have studied periodic arrays of metal nanoparticles fabricated using electron-beam lithography, and characterised their reflectance properties. The optical properties of the fabricated arrays were found to be in good agreement with finite-difference time-domain (FDTD) simulations. Au and Al nanoparticles are found to have a strong scattering effect and Al nanoparticles are also shown to exhibit an anti-reflection effect in combination with scattering. This work is focused on verifying that FDTD simulations can accurately model metal nanoparticle arrays and then extending the simulations to determine the previously unknown transmittance characteristics of metal nanoparticle arrays on silicon.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2018
Publisher: SPIE
Date: 08-03-2014
DOI: 10.1117/12.2039179
Publisher: Elsevier BV
Date: 12-2017
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 15-06-2014
Publisher: IEEE
Date: 06-2019
Publisher: Wiley
Date: 28-04-2022
Abstract: Black silicon (BSi) is a branch of silicon material whose surface is specially processed to a micro/nanoscale structure, which can achieve ultra‐low reflectance or ultra‐high electrochemical reactivity. The ersity and complex surface structures of BSi make it challenging to commercialize BSi devices. Modeling and simulation are commonly used in the semiconductor industry to help in better understanding the material properties, predict the device performance, and provide guidelines for fabrication parameters’ optimization. The biggest challenge for BSi device modeling and simulation is obtaining accurate input surface morphological data. In this work, the 3D models of challenging BSi textures are compared as obtained by atomic force microscopy (AFM) and plasma focused ion beam (PFIB) tomography techniques. In previous work, the PFIB tomography workflow toward the application of surface topography is optimized. In this work, the 3D models obtained from both AFM and PFIB are comprehensively compared, by using the surface models as inputs for finite‐difference time‐domain‐based optical simulation. The results provide strong evidence that PFIB tomography is a better choice for characterizing highly roughened surface such as BSi and provides surface 3D models with better reliability and consistency.
Publisher: Elsevier BV
Date: 2019
Publisher: IEEE
Date: 08-12-2020
Publisher: WIP
Date: 2015
Publisher: IEEE
Date: 06-2018
Publisher: Elsevier BV
Date: 06-2017
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2019
Publisher: Author(s)
Date: 2018
DOI: 10.1063/1.5049297
Publisher: The Optical Society
Date: 20-12-2019
DOI: 10.1364/OE.27.038645
Publisher: Elsevier BV
Date: 05-2019
Publisher: AIP Publishing
Date: 03-04-2023
DOI: 10.1063/5.0127896
Abstract: The microwave annealing of semiconductor devices has not been extensively researched and is rarely utilized in industry, yet it has the potential to significantly reduce the time and cost associated with large-volume semiconductor processing, such as the various heating and annealing processes required in the manufacture of photovoltaic modules. In this paper, we describe microwave annealing of silicon solar cells, the effective passivation of light-induced defects, and a reduction in light-induced degradation. We find that silicon solar cells are heated rapidly in a microwave field and that effective B–O defect passivation can be achieved by microwave processing in less than 2 s. Microwave annealing yields similar results as compared to rapid thermal annealing.
Publisher: Elsevier BV
Date: 08-2016
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2020
Publisher: The Optical Society
Date: 18-02-2014
DOI: 10.1364/OE.22.00A402
Publisher: Wiley
Date: 04-10-2017
Publisher: Elsevier BV
Date: 11-2020
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2018
Publisher: Author(s)
Date: 2018
DOI: 10.1063/1.5049333
Publisher: WIP
Date: 2015
Publisher: Elsevier BV
Date: 09-2017
Publisher: Wiley
Date: 20-01-2016
Publisher: Informa UK Limited
Date: 04-03-2014
Publisher: WIP-Munich
Date: 2010
Publisher: Optica Publishing Group
Date: 12-08-2015
DOI: 10.1364/AO.54.007224
Publisher: Elsevier BV
Date: 09-2018
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2016
Publisher: WIP
Date: 2016
Publisher: AIP Publishing
Date: 27-02-2017
DOI: 10.1063/1.4977906
Abstract: In p-type multicrystalline silicon solar cells, carrier-induced degradation (CID) can cause up to 10% relative reduction in conversion efficiency. Although, a great concern has been drawn on this degradation in the photovoltaic community, the nature of this degradation is still yet unknown. In this contribution, the recombination parameters of the responsible defect causing this degradation are extracted via temperature and injection dependent lifetime spectroscopy. Three wafers from three different ingots were processed into cell precursor and lifetime structures for the study. Similar defect recombination parameters were obtained for all s les. Two candidates for the defect energy level were identified: Et − Ei = −(0.32 ± 0.05) eV or Et − Ei = (0.21 ± 0.05) eV in the lower and upper bandgap halves, respectively. The capture cross section ratios were found to be k = 56 ± 23 or k = 49 ± 21 for the lower and upper bandgap halves, respectively. Contrary to previous studies, these parameters have been extracted for the responsible defect of CID, without making assumptions regarding the defect energy level. The result allows to model and to predict the impact of this defect on the solar cell efficiency.
Publisher: Elsevier BV
Date: 06-2020
Publisher: Springer Science and Business Media LLC
Date: 21-10-2022
DOI: 10.1038/S41598-022-21229-W
Abstract: This paper investigates the use of consumer flatbed scanners for the use of monitoring solar cell precursors. Two types of scanners are investigated a contact image scanner and scanners with more conventional optical setups. The contact image sensor is found to be more suitable as it does not require additional flat field calibration. The scanners’ ability to monitor variation in s le texture was investigated by monitoring the reflection of multi-crystalline and mono-crystalline textured wafers. For a baseline, a comparison was made to a high-end tool used in industry. Both good qualitative agreement and statistical correlation were achieved between the scanner and industry tool for the isotropic multi-crystalline wafers.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2022
Publisher: Wiley
Date: 12-09-2018
DOI: 10.1002/PIP.2928
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2021
Publisher: IEEE
Date: 06-2018
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2022
Location: United Kingdom of Great Britain and Northern Ireland
Start Date: 07-2023
End Date: 06-2026
Amount: $566,000.00
Funder: Australian Research Council
View Funded Activity