ORCID Profile
0000-0002-7365-9979
Current Organisation
University of Tsukuba
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Publisher: Wiley
Date: 08-1997
DOI: 10.1002/1521-3951(199708)202:2<827::AID-PSSB827>3.0.CO;2-8
Publisher: Proceedings of the National Academy of Sciences
Date: 19-07-2010
Abstract: Oriented assemblies of small crystals forming larger structures are common in nature and crucial for forthcoming technologies as they circumvent the difficulties of structural manipulation at microscopic scale. We have discovered two distinctive concentric assemblies of zinc oxide rods, wherein each rod has an intrinsically positive and a negative polar end induced by the noncentrosymmetric arrangement of Zn and O atoms. All the rods in a single assembly emanate out of a central core maintaining a single polar direction. Due to growth along the two polar surfaces with different atomic arrangements, these assemblies are distinct in their intrinsic properties and exhibit strong UV luminescence in the exterior of Zn-polar assemblies, unlike the O-polar assemblies. Although novel applications can be envisioned, these observations suggest that hierarchical organization with respect to internal asymmetry might be widespread in natural crystal assemblies.
Publisher: Royal Society of Chemistry (RSC)
Date: 2012
DOI: 10.1039/C2JM15109J
Publisher: American Chemical Society (ACS)
Date: 11-2005
DOI: 10.1021/JA053917C
Abstract: We report for the first time that boron nitride nanotubes (BNNTs) may be dissolved in organic solvents by wrapping them with a polymer. Transmission electron microscopy and cathodoluminescence studies indicate the strong pi-pi interactions between BNNTs and the polymer. A band gap ranging from 5.2 to 5.5 eV was documented for the BNNTs independent of their geometrical characteristics by using ultraviolet-visible absorption experiments on composite films and thin BNNT films prepared from solutions.
Publisher: American Chemical Society (ACS)
Date: 29-07-2008
DOI: 10.1021/NN800211Z
Publisher: American Chemical Society (ACS)
Date: 22-08-2003
DOI: 10.1021/JA030235L
Abstract: Epitaxial semiconducting heterostructures: side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowires were grown via a simple two-stage thermal evaporation of mixed SiO and ZnS or SiO and ZnSe powders under a precise temperature control. Each nanowire had a uniform diameter of 40-120 nm and length ranging from several to several tens of micrometers. Subnanowires of Si, ZnS, and ZnSe within them had a diameter of 20-50, 40-60, and 20-50 nm, respectively. The optical property (nanoscale cathodoluminescence) was also investigated from these new structures. It is proposed that the Si nanowires formed through disproportionation of SiO to Si in the first evaporation stage and then served as one-dimensional nanoscale substrates (or templates) for an epitaxial growth of ZnS or ZnSe nanowires in the following thermal evaporation of ZnS or ZnSe powders. The present results suggest that the simple method might be useful for the synthesis of many other heterostructures containing Si and II-VI or III-V semiconducting composite nanowires to meet the growing demands of nanoscale science and technology.
Publisher: American Chemical Society (ACS)
Date: 13-09-2013
DOI: 10.1021/AM4027949
Abstract: Quaternary solid-solution nanowires made of GaP and ZnS have been synthesized through well-designed synthetic routines. The as-synthesized GaP-ZnS solid-solution nanowires exhibit decent crystallinity with the GaP phase as the host, while a large amount of twin structural defects are observed in ZnS-rich nanowires. Cathodoluminescence studies showed that GaP-rich solid-solution nanowires have a strong visible emission centered at 600 nm and the ZnS-rich solid-solution nanowires exhibited a weak emission peak in the UV range and a broad band in the range 400-600 nm. The formation mechanism, processes, and optical emissions of GaP-ZnS solid-solution nanowires were discussed in detail.
Publisher: American Chemical Society (ACS)
Date: 08-08-2008
DOI: 10.1021/NL801353C
Abstract: We report on a controlled synthesis of two novel semiconducting heterostructures: heterocrystalline-ZnS/single-crystalline-ZnO biaxial nanobelts and side-to-side single-crystalline ZnS/ZnO biaxial nanobelts via a simple one-step thermal evaporation method. In the first heterostructure, a ZnS domain is composed of the heterocrystalline superlattice (3C-ZnS) N /(2H-ZnS) M [111]-[0001] with the atomically smooth interface between wurtzite and zinc blende ZnS fragments. High-spatial resolution cathodoluminescence studies on in idual heterostructures for the first time reveal a new ultraviolet emission peak ( approximately 355 nm), which is not observed in separate ZnS or ZnO nanostructures. The present hererostructures are expected to become valuable not only with respect to fundamental research but also for a design of new broad-range ultraviolet nanoscale lasers and sensors.
Publisher: Oxford University Press (OUP)
Date: 08-12-2016
Abstract: Surface defects with intrinsic origins in an epitaxial layer on 4H-SiC wafers were observed by scanning electron microscopy. Commercially available 4H-SiC epitaxial wafers with 4° or 8° off-axis angles from the [0001] direction toward the [112¯0] direction were used in this experiment. Various types of defects, including micropipes, pits, carrots, stacking faults and wide terrace and high step structures, were observed and clearly identified. The defects are presented as a catalog that can be used in the identification of surface defects.
Publisher: IOP Publishing
Date: 24-02-2011
DOI: 10.1088/0957-4484/22/14/145602
Abstract: As a structural analogue of the carbon nanotube (CNT), the boron nitride nanotube (BNNT) has become one of the most intriguing non-carbon nanostructures. However, up to now the pre-existing restrictions/limitations of BNNT syntheses have made the progress in their research rather modest. This work presents a new route toward the synthesis of highly pure ultrafine BNNTs based on a modified boron oxide (BO) CVD method. A new effective precursor--a mixture of Li₂O and B--has been proposed for the growth of thin, few-layer BNNTs in bulk amounts. The Li₂O utilized as the precursor plays the crucial role for the present nanotube growth. The prepared BNNTs have average external diameters of sub-10 nm and lengths of up to tens of µm. Electron energy loss spectrometry and Raman spectroscopy demonstrate the ultimate phase purity of the ultrafine BNNTs. Property studies indicate that the ultrafine nanotubes are perfect electrical insulators exhibiting superb resistance to oxidation and strong UV emission. Moreover, their reduced diameters lead to a dramatically decreased population of defects within the tube walls and result in the observation of near-band-edge (NBE) emission at room temperature.
Publisher: AIP Publishing
Date: 18-02-2005
DOI: 10.1063/1.1875732
Abstract: GaP nanoflowers composed of numerous GaP nanowires are synthesized through heating InP and Ga2O3 powders. Crystalline GaP nanowires growing from Ga-rich particles have a cubic structure, uniform diameters of ∼300nm, and lengths from several to tens of micrometers. Typically, an in idual GaP nanowire displays a hexagonal prism-like morphology with ⟨111⟩ as the preferential growth direction. Cathodoluminescence measurements show that GaP nanoflowers and GaP nanowires emit at ∼600 and ∼750nm, respectively. Additional low-intensity emission peaks are observed for GaP nanoflowers at ∼450nm.
Publisher: Oxford University Press (OUP)
Date: 08-12-2016
Abstract: Surface defects on 4H-SiC wafers with an epitaxial layer grown by chemical vapor deposition (CVD) were observed using scanning electron microscopy (SEM). Commercially available epitaxial-wafers with four or eight deg-off surface from the [0001] toward the [112¯0] directions were used for this experiment. 3C-SiC particles, triangular-defects, comets, obtuse-triangular-shaped-defects and micro-holes were identified in the SEM images. This paper can be considered as a catalog of SEM images and descriptions of various surface defects for 4H-SiC wafers with a CVD-grown epilayer.
Publisher: Springer Science and Business Media LLC
Date: 10-02-2010
Publisher: IOP Publishing
Date: 03-02-2009
DOI: 10.1088/0957-4484/20/8/085705
Abstract: Boron nitride (BN) microtubes were synthesized in a vertical induction furnace using Li(2)CO(3) and B reactants. Their structures and morphologies were investigated using x-ray diffraction, scanning and transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The microtubes have diameters of 1-3 microm, lengths of up to hundreds of micrometers, and well-structured ultrathin walls only approximately 50 nm thick. A mechanism combining the vapor-liquid-solid (VLS) and template self-sacrificing processes is proposed to explain the formation of these novel one-dimensional microstructures, in which the Li(2)O-B(2)O(3) eutectic reaction plays an important role. Cathodoluminescence studies show that even at room temperature the thin-walled BN microtubes can possess an intense band-edge emission at approximately 216.5 nm, which is distinct compared with other BN nanostructures. The study suggests that the thin-walled BN microtubes should be promising for constructing compact deep UV devices and find potential applications in microreactors and microfluidic and drug delivery systems.
Publisher: Wiley
Date: 03-08-2009
Publisher: Wiley
Date: 21-05-2009
Publisher: Wiley
Date: 29-12-2008
Publisher: American Chemical Society (ACS)
Date: 03-2008
DOI: 10.1021/JP711498M
Publisher: Wiley
Date: 25-01-2005
Publisher: Wiley
Date: 06-10-2008
Publisher: Wiley
Date: 18-07-2006
Publisher: Springer Science and Business Media LLC
Date: 15-05-2015
DOI: 10.1038/SREP10087
Abstract: By understanding the growth mechanism of nanomaterials, the morphological features of nanostructures can be rationally controlled, thereby achieving the desired physical properties for specific applications. Herein, the growth habits of aluminum nitride (AlN) nanostructures and single crystals synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport process were investigated by transmission electron microscopy. The detailed structural characterizations strongly suggested that the growth of AlN nanostructures including AlN nanowires and nanohelixes follow a sequential and periodic rotation in the growth direction, which is independent of the size and shape of the material. Based on these experimental observations, an helical growth mechanism that may originate from the coeffect of the polar-surface and dislocation-driven growth is proposed, which offers a new insight into the related growth kinetics of low-dimensional AlN structures and will enable the rational design and synthesis of novel AlN nanostructures. Further, with the increase of temperature, the growth process of AlN grains followed the helical growth model.
Publisher: Royal Society of Chemistry (RSC)
Date: 2009
DOI: 10.1039/B814674H
Publisher: AIP Publishing
Date: 07-09-2005
DOI: 10.1063/1.2042634
Abstract: Wurtzite-type CdS and CdSe nanotubes have been grown via a Sn nanowire-templated route under thermal annealing. The tubes are structurally uniform and defect-free single crystals, and partially or completely filled with Sn nanowires most of the tubes display pin-like structures showing significant tapering along their axes. Cathodoluminescence spectra reveal that CdS and CdSe nanotubes have profound emission peaks at ∼512 and ∼724nm. The luminescence intensities vary between Sn filled and unfilled tube parts. Keeping in mind that ZnS and ZnSe nanotubes may also be synthesized using the similar technique, we propose that the present method is a universal synthetic route toward single-crystalline IIB-VI group semiconductor nanotubes.
Publisher: Wiley
Date: 02-02-2009
Publisher: Informa UK Limited
Date: 14-04-2014
Publisher: Wiley
Date: 26-07-2007
Publisher: Royal Society of Chemistry (RSC)
Date: 2010
DOI: 10.1039/B919643A
Publisher: American Chemical Society (ACS)
Date: 17-04-2004
DOI: 10.1021/JP035856F
Abstract: Boron nitride whiskers with a special structure have been synthesized by a thermal reaction process. The as-prepared BN whiskers have a length of tens of micrometers and a mean diameter of 500 nm. High-resolution TEM analysis shows that the as-prepared BN whiskers can be described as a nanofiber-interweaved network. Infrared and electron energy loss spectra reveal that the BN whiskers are composed of both sigma-sp2 and sigma-sp3 chemical bonds. The UV-vis absorption spectrum displays the energy band gap of the BN whiskers and multiple fine absorption peaks of the phonon-electron coupling. Both photoluminescence (PL) and cathodoluminescence (CL) measurements show the specially structured BN emits strong UV and visible luminescences, which is a promising material for deep-blue and UV applications.
Publisher: Wiley
Date: 23-01-2004
Abstract: Uniform micro-sized alpha- and beta-Si(3)N(4) thin ribbons have been achieved by a high-temperature thermal-decomposition/nitridation route. As-grown ribbons were characterized by using powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy, and cathodoluminescence. These alpha- and beta-Si(3)N(4) ribbons are structurally uniform micro-sized single crystals, and have a width of approximately 2-3 microns, a thickness of approximately 20-60 nm, and a length, that ranges from several hundreds of microns to the order of millimeters. A room-temperature cathodoluminescence spectrum recorded from these ribbons shows one intensive blue emission peak at approximately 433 nm. The growth for the new ribbon form of this material is believed to be dominated by a vapor-solid process.
Publisher: AIP Publishing
Date: 12-06-2001
DOI: 10.1063/1.2208933
Abstract: Cubic structured nanosprings, InP nanosprings, have been synthesized via a simple thermochemical process using InP and ZnS as the source materials. Each InP nanospring is formed by rolling up a single InP nanobelt with the growth direction along the ⟨111⟩ orientation. The formation of these novel nanostructures is mainly attributed to the minimization of the electrostatic energy due to the polar charges on the ±(002) side surfaces of cubic InP. Cathodoluminescence properties were also studied, which reveal that the InP nanosprings have three emission bands centered at ∼736, ∼920, and ∼980nm.
Publisher: Wiley
Date: 2004
Publisher: Springer Science and Business Media LLC
Date: 27-02-2014
DOI: 10.1038/SREP04211
Abstract: As one of the most important two-dimensional (2D) materials, BN nanosheets attracted intensive interest in the past decade. Although there are many methods suitable for the preparation of BN sheets, finding a cheap and nontoxic way for their mass and high-quality production is still a challenge. Here we provide a highly effective and cheap way to synthesize gram-scale-level well-structured BN nanosheets from many common graphite products as source materials. Single-crystalline multi-layered BN sheets have a mean lateral size of several hundred nanometers and a thickness ranging from 5 nm to 40 nm. Cathodoluminescence (CL) analysis shows that the structures exhibit a near band-edge emission and a broad emission band from 300 nm to 500 nm. Utilization of nanosheets for the reinforcement of polymers revealed that the Young's modulus of BN/PMMA composite had increased to 1.56 GPa when the BN's fraction was only 2 wt.%, thus demonstrating a 20% gain compared to a blank PMMA film. It suggests that the BN nanosheet is an ideal mechanical reinforcing material for polymers. In addition, this easy and nontoxic substitution method may provide a universal route towards high yields of other 2D materials.
Publisher: American Chemical Society (ACS)
Date: 13-04-2010
DOI: 10.1021/JP100942M
Publisher: Royal Society of Chemistry (RSC)
Date: 2011
DOI: 10.1039/C0NR00700E
Abstract: Luminescence properties of in idual BN-coated CaS:Eu nanowires have been studied by high-spatial-resolution cathodoluminescence (CL) spectroscopy. A broad red light-emitting band from an in idual nanowire has been observed. Detailed local CL studies on the nanowires reveal spatial variations of luminescence from the structure surfaces toward their cores. Such variations are attributed to the different Eu2+ ions surroundings within the surface and core nanowire regions. The attractive luminescence properties are meaningful for fundamental studies of nanoscaled luminescent materials and may be of interest for novel optoelectronic applications.
Publisher: American Chemical Society (ACS)
Date: 02-10-2008
DOI: 10.1021/NN8004922
Abstract: Novel BN hollow nanoribbons (BNHNRs) were fabricated by a simple ZnS nanoribbon templating method. Such BNHNRs have a distinct structure and show unique optical properties, as demonstrated from Raman, Fourier transform infrared spectroscopy, UV-vis spectroscopy, and cathodoluminescence spectroscopy, when compared with other forms of BN nanostructures. With high crystallinity, the BNHNRs exhibit an extraordinary ultraviolet CL emission at 5.33 eV. Such a property is highly advantageous for optoelectronic applications, particularly in the ultraviolet region, such as blue lasing and light emitting diodes. This templating method has also been extended to synthesize other hollow nanostructures such as boron carbonitride. This study represents a new methodology for fabricating hollow nanostructures with defined crystallinity and unique optical properties.
Publisher: Wiley
Date: 18-08-2004
Publisher: Elsevier BV
Date: 11-2012
Publisher: Wiley
Date: 14-11-2006
Publisher: Springer Science and Business Media LLC
Date: 19-02-2021
DOI: 10.1038/S41467-021-21462-3
Abstract: Atomic metal wires have great promise for practical applications in devices due to their unique electronic properties. Unfortunately, such atomic wires are extremely unstable. Here we fabricate stable atomic silver wires (ASWs) with appreciably unoccupied states inside the parallel tunnels of α-MnO 2 nanorods. These unoccupied Ag 4 d orbitals strengthen the Ag–Ag bonds, greatly enhancing the stability of ASWs while the presence of delocalized 5 s electrons makes the ASWs conducting. These stable ASWs form a coherently oriented three-dimensional wire array of over 10 nm in width and up to 1 μm in length allowing us to connect it to nano-electrodes. Current-voltage characteristics of ASWs show a temperature-dependent insulator-to-metal transition, suggesting that the atomic wires could be used as thermal electrical devices.
Publisher: Wiley
Date: 22-07-2016
DOI: 10.1002/EEJ.22871
Publisher: Wiley
Date: 05-01-2007
Publisher: Wiley
Date: 18-04-2005
Publisher: AIP Publishing
Date: 20-07-2005
DOI: 10.1063/1.2000344
Publisher: AIP Publishing
Date: 12-01-2009
DOI: 10.1063/1.3069278
Abstract: Extraordinary and stable long wavelength emission (centered at ∼685 nm) from the yard-glass shaped boron nitride nanotubes (YG-BNNTs) was observed in their cathodoluminescence and photoluminescence spectroscopy. The mechanism for this near-red light emission at ∼685 nm is attributed to the periodical nature of the BNNT units with regular lattice defects. The visible-light emission from YG-BNNTs indicates that this material has great potential for applications as nano-optical and/or nano-optoelectronic devices in nanoscale surgery and spectroscopy.
Publisher: AIP Publishing
Date: 06-2009
DOI: 10.1063/1.3129583
Abstract: Transition-metal impurities gettered by grain boundaries (GBs) act as recombination centers of carriers and are regarded to be harmful defects in multicrystalline silicon (mc-Si) used for solar cell production. In this study, gettering of iron by Σ3 GBs in mc-Si was investigated by using transmission electron microscopy and annular dark-field (ADF) imaging. In the clean specimen, both straight Σ3{111} GB and zig-zag Σ3{110}, {112} GBs are not electrically active, whereas the zig-zag Σ3{110}, {112} GBs become electrically active when contaminated with iron. ADF images have shown that iron is preferentially gettered at the irregular parts of zig-zag Σ3{112} GB and exists in the form of clusters. The iron gettering abilities of these Σ3 GBs have been discussed.
Publisher: Wiley
Date: 31-05-2010
Publisher: IOP Publishing
Date: 18-08-2009
DOI: 10.1088/0957-4484/20/36/365705
Abstract: We fabricated ellipsoid-shaped ZnGa(2)O(4) nanorods using a newly-designed chemical vapor deposition (CVD) process, different from the conventional methods. The optical properties of nanorods were studied using cathodoluminescence (CL) measurements. The nanorods displayed three distinct emissions centered at 360, 450 and 550 nm. The luminescence mechanism is thoroughly discussed and explained based on a detailed structural and compositional study with a transmission electron microscope (TEM) equipped with an electron energy loss spectrometer (EELS).
Publisher: American Scientific Publishers
Date: 08-2013
Abstract: ZnO nanosheets with triangular morphology have been synthesized on an Au-coated silicon substrate through a facile thermal evaporation process. The morphologies and microstructures of the nanosheets were studied by a scanning electron microscope (SEM) and a high-resolution transmission electron microscope (HR-TEM). These studies show that a nanosheet is commonly composed of two parts: a triangular ZnO sheet and an Au nanoparticle attached on its tip-end. Detailed crystallography analyses conclude that the formation of the highly crystalline nanostructures can be assigned to a combination of a vapor-liquid-solid (VLS) process that is believed to be responsible for its initial nucleation and subsequent crystallization along the growth direction, and a vapor-solid (VS) process that is responsible for its further radial growth. The spatially-resolved cathodoluminescence (CL) spectra exhibit a sharp strong near-band-edge (NBE) emission in the ultraviolet range and a negligible green emission.
Publisher: AIP Publishing
Date: 08-2005
DOI: 10.1063/1.2009056
Abstract: Boron nitride nanohorns (BNNHs) are synthesized in large scale. Their morphology and structure were investigated by scanning electron microscopy and transmission electron microscopy. The hollow conical structure and particular aggregation behavior are revealed. Cathodoluminescence measurement is performed and ultraviolet light emission is observed, which indicates the potential applications of BNNHs in optical devices.
Publisher: IOP Publishing
Date: 21-01-2010
DOI: 10.1088/0957-4484/21/7/075708
Abstract: High-quality, crystalline AlN whiskers with large yield have been synthesized through the direct nitridation of Al vapor at high temperature. The AlN whiskers exhibited a strong and uniform ultraviolet emission at approximately 352 nm, which is notably shorter compared with the wavelength of previously reported one-dimensional AlN nanostructures. Energy filtered transmission electron microscope (TEM) analyses indicated that nitrogen deficiency and rather lower oxygen content in the AlN lattice might be responsible for the strong 352 nm ultraviolet emission.
Publisher: American Chemical Society (ACS)
Date: 26-10-2005
DOI: 10.1021/JA054887G
Abstract: Porous boron carbonitride nanotubular fibers with BCN stoichiometry and homogeneous B, C, and N species distribution were fabricated via the CVD method. Spatially resolved cathodoluminescence measurements on in idual nanostructures revealed intense ultraviolet emission centered at 319 nm, suggesting the characteristics of a semiconductor with a band gap of 3.89 eV. It is believed that the present nanostructures may have a variety of applications in ultraviolet optical devices, hydrogen storage systems, and field emission apparatus.
Publisher: Wiley
Date: 17-08-2007
Publisher: AIP Publishing
Date: 15-09-2008
DOI: 10.1063/1.2983649
Abstract: We report the correlation between residual strain and electrically active grain boundaries (GBs) in multicrystalline silicon. The former concerns the process yield, and the latter affects the solar cell efficiency. The distribution of strain was imaged by scanning infrared polariscope, and the electrically active GBs were characterized by electron-beam-induced current. Large strain was detected near multitwin boundaries and small-angle GBs. The multitwin boundaries are electrically inactive, while small-angle GBs act as strong recombination centers. It indicates that the electrical activities of GBs are not directly related to the residual strain.
Publisher: AIP Publishing
Date: 16-03-2009
DOI: 10.1063/1.3099001
Abstract: Dislocation-related luminescence from small-angle grain boundaries (SA-GBs) in multicrystalline Si was investigated by cathodoluminescence. D3 and D4 emissions were detected at SA-GBs with a misorientation angle of around 1°–1.5°, and D1 and D2 at SA-GBs with a misorientation angle of around 2°–2.5°. Electron beam-induced current investigations indicate that the former SA-GBs possess only shallow energy levels, while the latter possess both deep and shallow levels. The origins of D-line luminescence at SA-GBs are discussed in terms of dislocation structures.
Publisher: Walter de Gruyter GmbH
Date: 06-08-2010
Abstract: Since the discovery of carbon nanotubes (CNTs) in 1991, widespread research has been carried out to understand their useful physical and electronic properties and also to explore their use in devices. CNTs have many unique properties such as tunable electrical resistance, mechanical robustness, and high thermal conductivity, which when combined with other inorganic materials such as phosphors or superconductors could lead to hetero-structures with erse functionality. We have been able to obtain mass production of such materials wherein CNTs form core-shell heterostructures with metals, semiconductors, insulators, and even metal-semiconductor heterojunctions. The emerging strategy employs a high-temperature chemical vapor deposition (CVD) technique and high heating rates. Interestingly, due to their high temperature stability, CNTs can act as a nanoreactor for production of exotic materials inside it. In this article, we take ZnS-filled CNTs as an ex le to explain our synthesis strategy. We explore the optical behavior of these complex materials, analyzing both their luminescence and degradation upon exposure to an electron beam. In addition, the mechanical response of filled CNTs has been evaluated in idually inside a transmission electron microscope fitted with an atomic force microscopy–transmission electron microscopy (AFM–TEM) s le holder. Many applications can be envisioned for these nanostructures ranging from nanothermometers to photo-protective storage and delivery devices.
Publisher: IEEE
Date: 2010
Publisher: IOP Publishing
Date: 20-07-2012
DOI: 10.1088/0953-8984/24/31/314205
Abstract: An improved 'chemical blowing' route presuming atmospheric-pressure pre-treatment and moderate heating rate of designated precursors was developed to synthesize ultra-thin boron nitride (BN) nanosheets with high yield and large lateral dimensions. The yield reached as high as 40 wt% with respect to raw materials (ammonia borane). The strong oxygen-related ultraviolet luminescence together with a blue emission of these BN nanosheets was then documented and analyzed. This implies potential applications in solid-state lighting, ultraviolet lasing and full-color luminescence. Mechanical strength of different polymeric composites with a small fraction of BN nanosheet fillers was dramatically increased by tens of per cent, while high transparency of composite materials was still maintained in the visible optical range. The increased yield and reduced cost of BN nanosheets should promote their wide practical applications in various composites.
Publisher: Wiley
Date: 21-12-2005
No related grants have been discovered for Takashi Sekiguchi.