ORCID Profile
0000-0002-4514-0336
Current Organisation
Griffith University
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Publisher: AIP Publishing
Date: 05-2023
DOI: 10.1063/5.0151589
Abstract: Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor capacitors, at cryogenic temperatures, we find that these fast traps are absent in oxides made by sodium enhanced oxidation, and high inversion channel-carrier mobility in MOSFETs made by sodium enhanced oxidation is observed.
Publisher: AIP Publishing
Date: 16-07-2001
DOI: 10.1063/1.1385181
Abstract: N 2 O and NO nitridation by either annealing or direct growth of gate oxides on 4H SiC is analyzed in this letter. The analysis is based on x-ray photoelectron spectroscopy binding energies and secondary ion mass spectroscopy depth profiles of nitrogen at the SiO2–SiC interface. A clean SiO2–SiC interface is found in both NO and N2O annealed/grown s les, as opposed to the interface annealed in Ar which exhibits complex suboxides and oxide–carbon compounds. The results demonstrate that nitridation in the industry-preferred N2O ambient could be as effective as nitridation in NO, provided appropriate process optimization is performed.
Publisher: Elsevier BV
Date: 1988
Publisher: Elsevier BV
Date: 11-1993
Publisher: World Scientific Pub Co Pte Lt
Date: 06-2010
DOI: 10.1142/S0219581X10006582
Abstract: Silicon nitride and silicon oxynitride are materials used extensively in mechanical and electronic devices due to their outstanding properties. Thin films of silicon nitride and silicon oxynitride can be deposited on a silicon surface. In this study, nitridation of silicon wafers by a rapid thermal heating process with both nitrogen and ammonia as precursors was investigated by transmission electron microscopy, electron energy loss spectroscopy, and ellipsometry analyses. It was found that, under ammonia gas, the growth of nitride film was limited to 0.5 nm, whilst under the nitrogen atmosphere, a nitride film of 5–10 nm could be formed at 1200°C. The limited growth in ammonia suggests formation of high-quality passivating layer.
Publisher: Trans Tech Publications, Ltd.
Date: 04-2010
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.645-648.661
Abstract: In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT s les from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 °C during 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.
Publisher: IEEE
Date: 2003
Publisher: MDPI AG
Date: 09-01-2021
DOI: 10.3390/ELECTRONICS10020130
Abstract: The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for the design and verification of power-electronic circuits. This paper shows that GaN-HEMTs can be modeled by selected equations from the standard MOSFET LEVEL 3 model in SPICE. A method is proposed for the extraction of SPICE parameters in these equations. The selected equations and the proposed parameter-extraction method are verified with measured static and dynamic characteristics of commercial GaN-HEMTs. Furthermore, a double pulse test is performed in LTSpice and compared to its manufacturer model to demonstrate the effectiveness of the MOSFET LEVEL 3 model. The advantage of the proposed approach to use the MOSFET LEVEL 3 model, in comparison to the alternative behavioral-based model provided by some manufacturers, is that users can apply the proposed method to adjust the parameters of the MOSFET LEVEL 3 model for the case of manufacturers who do not provide SPICE models for their HEMTs.
Publisher: IEEE
Date: 1995
Publisher: SPIE
Date: 12-11-1999
DOI: 10.1117/12.370370
Publisher: Wiley
Date: 08-2008
DOI: 10.1111/J.1744-313X.2008.00781.X
Abstract: Polymorphisms within the gene encoding macrophage migration inhibitory factor (MIF) have been associated with susceptibility to inflammatory diseases such as rheumatoid arthritis and increased risk of developing sepsis. We investigated the effects of the MIF‐173G C polymorphism and the MIF‐794 CATT microsatellite on MIF expression. These are in moderate linkage disequilibrium. Mononuclear cells from healthy donors were stimulated with bacterial pathogens associated with sepsis ( Streptococcus pneumoniae or Escherichia coli ). MIF mRNA and protein levels were measured by real‐time polymerase chain reaction and ELISA, respectively. Carriage of the C allele of MIF‐173G C or the 7 CATT repeat of the MIF‐794 microsatellite correlated with lower basal and stimulated MIF mRNA levels. However, levels of intracellular and extracellular MIF protein were similar. This discordance between effects on MIF mRNA and protein was not explained by differential effects of genotype on stability of MIF mRNA (detected by actinomycin D mRNA chase). Gel shift assays revealed no differences in the profile of nuclear proteins from mononuclear cells bound by the G and C alleles of MIF‐173G C, but alleles at the microsatellite marker showed differential binding. Our data suggest that the MIF‐794 CATT microsatellite influences transcription by differential binding of nuclear transcription factors. This may impact on inflammatory processes.
Publisher: Springer Netherlands
Date: 1998
Publisher: Springer Science and Business Media LLC
Date: 1999
DOI: 10.1557/PROC-567-57
Abstract: The necessity to decrease silicon wafer-processing temperatures substantially has stimulated research into new and innovative techniques for the formation of thin dielectric films. A photo-decomposition technique using Nitric Oxide (NO) is one such promising method. Thermally NO-grown and NO-annealed dielectric films have already shown very encouraging physical and electrical results. This study compares thermally NO-grown oxides with thermally NO grown and assisted by ultraviolet (UV) irradiation. Methods using UV and vacuum UV light generated from low-pressure mercury or deuterium l s to stimulate the growth of ultrathin dielectric films are described. The oxynitridation of silicon is carried out by irradiating an ultraviolet beam on the heated silicon substrate covered by a thin layer of nitric oxide gas. Typical resultant film thickness were in the range 10 –40 A after oxynitridation for various times at 500°C. MIS devices were fabricated using these films as gate insulators and were electrically characterized. Electrical characterization revealed good film qualities, rendering this new UV-NO oxynitridation technique promising for low temperature ( °C) semiconductor processing. Films grown in NO ambient under deuterium l irradiation followed by NO annealing were also investigated. These results will also be presented.
Publisher: Trans Tech Publications, Ltd.
Date: 09-2003
Publisher: MDPI AG
Date: 29-04-2022
DOI: 10.3390/ELECTRONICS11091433
Abstract: This paper proposes a criterion to select the best family of commercial SiC power metal–oxide–semiconductor field-effect transistors (MOSFETs) that provides the highest quality and reliability. Applying a recently published integrated-charge method, a newly proposed figure of merit is correlated to the density of near-interface traps that degrade the quality and reliability of SiC MOSFETs. The applicability of the proposed figure of merit is experimentally demonstrated with the most widely used and commercially available planar and trench MOSFETs from different manufacturers.
Publisher: Elsevier BV
Date: 1989
Publisher: Inderscience Publishers
Date: 2013
Publisher: IOP Publishing
Date: 02-2013
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-2016
Publisher: The Electrochemical Society
Date: 2013
DOI: 10.1149/2.009308JSS
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2018
Publisher: IEEE
Date: 2002
Publisher: Wiley
Date: 25-03-2003
DOI: 10.1046/J.1365-2443.2002.00641.X
Abstract: BAT1 belongs to the DEAD-box family of proteins, and is encoded in the central region of the MHC, a region containing genes affecting immunopathological disorders including Type 1 diabetes. We showed that BAT1 can reduce inflammatory cytokine production, supporting its candidacy as a disease gene. Here we examined the proximal promoter region of BAT1. Ten single nucleotide polymorphisms were identified in approximately 1.4 kb of sequence, defining at least seven alleles. Sections of the BAT1 promoter region were lified from cells homozygous for the MHC haplotypes associated with susceptibility (HLA-A1, B8, DR3 8.1 haplotype) and resistance (HLA-A3, B7, DR15 7.1 haplotype) to diabetes and cloned into a promoter-less luciferase-encoding plasmid. Jurkat cells transiently transfected with fragments from the 8.1 haplotype exhibited a lower luciferase activity than those transfected with fragments from the 7.1 haplotype, indicating reduced transcription. The effect was clearest with the 520 bp immediately upstream of the transcriptional start site. Electrophoretic mobility shift assays using oligonucleotides spanning polymorphic sites within the 520 bp (proximal) promoter fragment showed haplotype-specific binding of nuclear proteins. In view of the anti-inflammatory role of BAT1, reduced production on a disease-associated haplotype constitutes a novel and self-consistent model for the effect of central MHC genes on disease.
Publisher: Springer Science and Business Media LLC
Date: 05-02-2015
DOI: 10.1557/JMR.2015.3
Publisher: Elsevier BV
Date: 05-1988
Publisher: Elsevier BV
Date: 06-2003
Publisher: Elsevier BV
Date: 05-2010
Publisher: Springer Science and Business Media LLC
Date: 18-12-2017
DOI: 10.1038/S41598-017-17985-9
Abstract: This work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat treatments between 1000 °C and 1300 °C. Because of the potential for silicon carbide in high temperature and harsh environment applications, and the economic advantages of growing the 3C-SiC polytype on large diameter silicon wafers, its stability after high temperature processing is an important consideration. Yet recently, this has been thrown into question by claims that the heterojunction suffers catastrophic degradation at temperatures above 1000 °C. Here we present results showing that the heterojunction maintains excellent diode characteristics following heat treatment up to 1100 °C and while some changes were observed between 1100 °C and 1300 °C, diodes maintained their rectifying characteristics, enabling compatibility with a large range of device fabrication. The parameters of as-grown diodes were J 0 = 1 × 10 −11 A/mm 2 , n = 1.02, and +/−2V rectification ratio of 9 × 10 6 . Capacitance and thermal current-voltage analysis was used to characterize the excess current leakage mechanism. The change in diode characteristics depends on diode area, with larger areas (1 mm 2 ) having reduced rectification ratio while smaller areas (0.04 mm 2 ) maintained excellent characteristics of J 0 = 2 × 10 −10 A/mm 2 , n = 1.28, and +/−2V ratio of 3 × 10 6 . This points to localized defect regions degrading after heat treatment rather than a fundamental issue of the heterojunction.
Publisher: Informa UK Limited
Date: 1994
Publisher: AIP
Date: 2011
DOI: 10.1063/1.2739844
Publisher: IEEE
Date: 1995
Publisher: AIP Publishing
Date: 23-07-2007
DOI: 10.1063/1.2763966
Abstract: Sequential thermal oxidations and oxynitridations of SiC were performed using O218 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly grown in NO. A subsequent oxidation in O2 degraded the interface due to negative flatband-voltage shift, removal of N, and formation of C compounds, while a further annealing in NO brought the flatband shift in the C-V curves to rather moderate figures. This shift is related to competitive processes taking place during dielectric film formation which are discussed.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2004
Publisher: Springer Science and Business Media LLC
Date: 05-2015
DOI: 10.1557/MRS.2015.89
Publisher: Elsevier BV
Date: 02-2003
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2008
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-1995
DOI: 10.1109/66.406891
Publisher: AIP Publishing
Date: 14-11-2005
DOI: 10.1063/1.2130522
Abstract: In this letter we report current-conduction mechanisms in nitrided gate oxides on n-type 4H SiC subjected to various rapid-thermal-annealing temperatures. The experimental results show that by increasing SiC-SiO2 interface trap density, current conduction in the oxide is increased. Fowler-Nordheim (FN) tunneling which is assisted by SiC-SiO2 interface trap is responsible to the current conduction. In contrast, the current conduction through the oxide is significantly reduced when the oxide is having a multiple discrete energy level of electron trap center. This center enables trapping of electrons that are injected from SiC substrate via FN tunneling, causing a reduction in leakage current and an improvement in oxide breakdown strength. Based on the results, a model has been hypothesized and reasons for these observations have been presented.
Publisher: SPIE
Date: 29-09-1999
DOI: 10.1117/12.364468
Publisher: Wiley
Date: 02-1989
DOI: 10.1111/J.1834-7819.1989.TB03006.X
Abstract: A technique to provide cement spacing for cast post-cores prior to construction of their crowns is described. The axial lift of crowns cemented with zinc phosphate was greater, but not significantly, for crowns constructed on non-spaced post-cores compared with crowns constructed on spaced post-cores. Three materials were evaluated to determine their effectiveness in providing cement spacing for post-cores. The phenomenon of post-core 'wedging' during luting was identified.
Publisher: Elsevier BV
Date: 02-1994
Publisher: Springer Science and Business Media LLC
Date: 16-07-2018
Publisher: Elsevier BV
Date: 02-2018
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-1994
DOI: 10.1109/55.338422
Publisher: Elsevier BV
Date: 1991
Publisher: IEEE
Date: 1999
Publisher: IEEE
Date: 2002
Publisher: Institution of Engineering and Technology (IET)
Date: 08-2015
DOI: 10.1049/EL.2015.1428
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2015
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 1994
DOI: 10.1109/16.333843
Publisher: Trans Tech Publications, Ltd.
Date: 04-2010
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.645-648.689
Abstract: The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.
Publisher: Elsevier BV
Date: 2008
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-1997
DOI: 10.1109/55.568752
Publisher: Optica Publishing Group
Date: 10-12-1997
DOI: 10.1364/AO.36.009287
Abstract: We report certain diffraction effects that are pertinent to the operation of double-layer optical recording media. For simulating cross-talk effects for double layers, the diffraction of light from the out-of-focus layer and the resulting distribution on the in-focus layer are studied by use of computer simulations. The findings are then verified qualitatively by direct measurements. We also describe a technique for analyzing (by computer simulation) the focus-error signal (FES), taking into account the cross talk between two layers, in systems that use the astigmatic method in conjunction with the double-layer disk. The results of our computer simulations of the FES give us a 10% cross-talk contribution to the original signal. The results of the FES evaluation are compared with those measured in an actual disk drive good agreement between computation and measurement is obtained.
Publisher: The Electrochemical Society
Date: 2010
DOI: 10.1149/1.3290679
Publisher: AIP Publishing
Date: 08-05-1995
DOI: 10.1063/1.113150
Abstract: Glitches of positive current at negative voltages have been observed during current–voltage measurements of metal–oxide semiconductor capacitors. The magnitude of the glitches depends on both stepping rate and duration of holding the metal electrode at the most negative potential before stepping towards positive potentials is initiated. Current versus time measurements show a voltage-dependent time constant, generally ≳100 ms. Charging/discharging of border traps is suggested as a possible cause for this effect.
Publisher: Informa UK Limited
Date: 09-2008
Publisher: Royal Society of Chemistry (RSC)
Date: 2018
DOI: 10.1039/C7RA11922D
Abstract: This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices.
Publisher: National Library of Serbia
Date: 2013
DOI: 10.2298/FUEE1303215M
Abstract: Current research into classification methods is almost exclusively software based, resulting in systems that perform well but are invariably slow when faced with large databases. The goal is therefore to create a hardware classification system that is much faster. In this paper, we introduce the concept of template matching logic and propose the use of a standard flash memory cell array to perform bit by bit template matching. The proposed system is based on a novel architecture that is unique and separate from existing architectures that make use of flash memory cell arrays. Verification is achieved by speech recognition simulations on the TIMIT database. Simulations of the system show results of 94.5 % recognition accuracy on clean words and 88.0 % recognition accuracy on test words with a signal-to-noise ratio of 5 dB. The results compare favorably to similar isolated word recognition tasks performed with software based methods.
Publisher: AIP Publishing
Date: 07-06-2022
DOI: 10.1063/5.0086974
Abstract: Fast near-interface (NI) traps have recently been suggested to be the main cause for poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors. Combining capacitance, conductance, and thermal dielectric relaxation current (TDRC) analysis at low temperatures of nitrided SiC MOS capacitors, we observe two categories of fast and slow near-interface traps at the SiO 2 /4H-SiC interface. TDRC reveals a suppression of slow near-interface traps after nitridation. Capacitance and conductance analysis reveals a high density of fast NI traps close to the SiC conduction band edge that are enhanced by nitridation. The very fast response of NI traps prevents them from detection using TDRC or deep level transient spectroscopy.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 09-2020
Publisher: SPIE
Date: 1992
DOI: 10.1117/12.56624
Publisher: Trans Tech Publications, Ltd.
Date: 06-2004
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2019
Publisher: Elsevier BV
Date: 1987
Publisher: AIP Publishing
Date: 29-04-2002
DOI: 10.1063/1.1476060
Abstract: In this letter, the possibility of using metal–oxide–semiconductor capacitors on SiC as nonvolatile random-access memory elements has been experimentally investigated. Because of the wide energy gap and the very low minority-carrier generation rate in SiC, it should be possible to achieve very long retention times. The investigations show that charge leakage through the gate oxide may prevent the use of SiC metal–oxide–semiconductor (MOS) capacitors as memory elements. Importantly, the experiments demonstrate that both the charge leakage and carrier-generation rate are low in the case of nitrided SiO2–SiC interfaces. The retention time extrapolated to room temperature is in the order of 109 years for the case of MOS capacitors on 4H–SiC, which is approximately equal to the theoretical limit.
Publisher: Royal Society of Chemistry (RSC)
Date: 2014
DOI: 10.1039/C4RA10409A
Abstract: A low temperature alternating supply epitaxy grown p-type 3C–SiC thin film is further etched to enhance the photoelectrocatalytic performance.
Publisher: Trans Tech Publications, Ltd.
Date: 09-2003
Publisher: AIP Publishing
Date: 15-10-1999
DOI: 10.1063/1.371363
Abstract: Silicon dioxide (SiO2)/silicon carbide (SiC) structures annealed in nitric oxide (NO) and argon gas ambiences were investigated using x-ray photoelectron spectroscopy (XPS). The XPS depth profile analysis shows a nitrogen pileup of 1.6 at. % close to the NO annealed SiO2/SiC interface. The results of Si 2p, C 1s, O 1s, and N 1s core-level spectra are presented in detail to demonstrate significant differences between NO and Ar annealed s les. A SiO2/SiC interface with complex intermediate oxide/carbon states is found in the case of the Ar annealed s le, while the NO annealed SiO2/SiC interface is free of these compounds. The Si 2p spectrum of the Ar annealed s le is much broader than that of the NO annealed s le and can be fitted with three peaks compared with the two peaks in the NO annealed s le, indicating a more complex interface in the Ar annealed s le. Also the O 1s spectrum of the NO annealed s les is narrow and symmetrical and can be fitted with only one peak whereas that of the Ar annealed s le is broad and asymmetrical and is fitted with two peaks. It is evident that the Ar annealed s le contains some structural defects at the interface, which have been removed from the interface by NO annealing as shown by O 1s spectra. The C 1s spectra at the interface reveal the subtle difference between NO and Ar annealed s les. An additional peak representing the interface oxide/carbon species is observed in the Ar annealed s le. At the interface, the N 1s spectrum is symmetrical and can be fitted with one peak, representing the strong Si≡N bond. However, the N 1s and C 1s XPS spectra acquired in the bulk of the dielectric showed not only the Si≡N bond but also a trace amount of the N–C bond.
Publisher: Springer Science and Business Media LLC
Date: 08-2000
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2017
Publisher: Springer Science and Business Media LLC
Date: 1994
DOI: 10.1557/PROC-342-151
Abstract: In this paper we review various methods of improving the properties of extremely thin dielectrics ( nm) using a nitrogen rich environment. The three main gases considered being ammonia, and nitrous and nitric oxides. We present original results for nitric oxide exposed silicon and suggest that for ultra thin dielectric ( nm) that these layers are generally superior to any others, whilst for thicker layers oxides annealed in nitrous oxides appear to display the best properties.
Publisher: Springer Science and Business Media LLC
Date: 18-10-2009
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2001
DOI: 10.1109/16.936693
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2021
Publisher: SPIE
Date: 30-03-2004
DOI: 10.1117/12.531136
Publisher: Springer Science and Business Media LLC
Date: 29-11-2012
Publisher: Wiley
Date: 02-01-2019
Publisher: AIP Publishing LLC
Date: 2014
DOI: 10.1063/1.4898481
Publisher: Trans Tech Publications, Ltd.
Date: 05-2016
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.858.453
Abstract: In this paper, we present surprising MOS capacitor C– V bias instability observed in NO-grown oxides, with distinctly different behavior compared to that of conventional NO-annealed oxides on 4H-SiC. Using sequential back-and-forth and bias-temperature stress C–V measurements, it was demonstrated that the C–V shift direction of NO-grown oxides was opposite to that of NO-annealed oxides. A model based on bias-temperature stress orientated near-interfacial dipoles is proposed to explain this unique behavior of NO-grown oxides.
Publisher: Trans Tech Publications, Ltd.
Date: 03-2009
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.615-617.545
Abstract: The effects of post deposition annealing in forming gas (5 % H2 in 95 % N2) ambient at different temperatures (850, 950, and 1050 oC) on metal-oxide-semiconductor characteristics of sol-gel derived HfO2 gate on n-type 4H-SiC have been investigated. After 30 min of the annealing, an accumulation of positive effective oxide charge (Qeff) has been observed in all s les. The total interface trap density and Qeff of the oxides annealed at 850 and 950 oC are comparable but an increment and reduction of the respective densities have been recorded when the oxide was annealed at 1050 oC. A reduction of near interface trap density has been revealed as the annealing temperature has been increased. These observation was closely related to the increment of leakage current density as the annealing temperature increased.
Publisher: Institution of Engineering and Technology (IET)
Date: 1998
DOI: 10.1049/EL:19981230
Publisher: Elsevier BV
Date: 07-2009
Publisher: Institution of Engineering and Technology (IET)
Date: 2010
DOI: 10.1049/EL.2010.0279
Publisher: Elsevier BV
Date: 04-1999
Publisher: Trans Tech Publications, Ltd.
Date: 09-2007
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.556-557.643
Abstract: We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3, thermal-nitrided SiO2, and atomic-layer-deposited La2O3/thermal-nitrided SiO2 on n-type 4H-SiC. A significant reduction in leakage current density has been observed in La2O3 structure when a 6-nm thick thermal nitrided SiO2 has been sandwiched between the La2O3 and SiC. However, this reduction is still considered high if compared to s le having thermal-nitrided SiO2 alone. The reasons for this have been explained in this paper.
Publisher: Wiley
Date: 16-03-1983
Publisher: IEEE
Date: 1996
Publisher: Trans Tech Publications, Ltd.
Date: 2013
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.740-742.1111
Abstract: In this work, we studied the effect of surface preparation and substrate temperature during sputter deposition of Schottky contacts on N-GaN/SiC/Si substrates, looking at parameters such as on-resistance, reverse leakage, and contact barrier height. Ti, Ni and Mo were sputtered to form the contacts, and we characterized the I-V curves with the different substrate temperatures during the sputtering as shown in Figure 1. For the Ti Schottky contact, the substrate temperature of 100oC during the sputtering demonstrates the minimum series resistance with Rs about 0.04cm2, while temperatures greater than 3000C increased reverse bias leakage. The Mott-Schottky plot reveals a barrier height of 1.2V for this contact. Results for sputtered Ni contacts using different substrate temperatures will also be presented, as well as the effect of Ar sputter cleaning before contact deposition.
Publisher: Institution of Engineering and Technology (IET)
Date: 1987
DOI: 10.1049/EL:19870609
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2019
Publisher: AIP Publishing
Date: 22-06-2009
DOI: 10.1063/1.3159812
Abstract: C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and thicknesses. The thickest C-containing interlayer was observed for films thermally grown in O2, whereas the thinnest one was observed for films directly grown in NO, evidencing that the presence of N decreases the amount of carbonaceous compounds in the dielectric/SiC interface region.
Publisher: Institution of Engineering and Technology (IET)
Date: 1999
DOI: 10.1049/EL:19991259
Publisher: Elsevier BV
Date: 05-2002
DOI: 10.1016/S0198-8859(02)00383-X
Abstract: This study investigates the hypothesis that alternative alleles of one or more genes in the central major histocompatibility complex (MHC) predispose carriers to IgA deficiency (IgAD) or IgA Nephropathy (IgAN). Australian caucasian IgAD, IgAN patients, and controls were typed at HLA loci, single nucleotide polymorphisms, and microsatellites in the MHC. Alleles of the D6S273 microsatellite exhibited strong associations with IgAD and IgAN. D6S273*129 and *139 were more frequent in IgAD and less frequent in IgAN patients than controls. The reverse was true for D6S273*133 and *131. Alleles of other microsatellites exhibited weak associations with IgAD or IgAN. D6S273*129 is found on the 65.1 ancestral haplotype [HLA-B14(65),DR1], which has been reported to be increased in IgAD, but the majority of IgAD patients with D6S273*129 did not have other alleles of the haplotype. D6S273*139 is characteristic of the 8.1 ancestral haplotype (HLA-A1,B8,DR3), which was common in IgAD and rare in IgAN patients. Further studies of the 8.1 haplotype in Australian, German and Spanish caucasian subjects revealed that HLA-DR3, in the absence of -B8, is not associated with IgAD. However -B8 is associated with IgAD in the absence of -DR3, consistent with a susceptibility locus in the central MHC. Provisional mapping within this region is discussed.
Publisher: Wiley
Date: 16-06-1994
Publisher: IEEE
Date: 1994
Publisher: Institution of Engineering and Technology (IET)
Date: 16-03-1995
DOI: 10.1049/EL:19950302
Publisher: IEEE
Date: 2003
Publisher: Trans Tech Publications, Ltd.
Date: 06-2004
Publisher: Wiley
Date: 09-1998
DOI: 10.1002/(SICI)1521-396X(199809)169:1<63::AID-PSSA63>3.0.CO;2-4
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2003
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-1996
DOI: 10.1109/55.541766
Publisher: Institution of Engineering and Technology (IET)
Date: 2006
Publisher: IEEE
Date: 08-2014
Publisher: Elsevier BV
Date: 05-2016
Publisher: Elsevier BV
Date: 2005
Publisher: Elsevier BV
Date: 09-2002
Publisher: Trans Tech Publications, Ltd.
Date: 02-2014
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.778-780.710
Abstract: This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I–V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I–V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I–V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.
Publisher: Wiley
Date: 13-05-2007
Publisher: Informa UK Limited
Date: 18-11-2021
Publisher: SAGE Publications
Date: 04-1998
DOI: 10.1177/1045389X9800900406
Abstract: An original design for a new comb finger structure to be used in electrostatically driven actuator devices is presented and experimentally demonstrated. The new design is seen as one viable alternative to the already prevalent rectangular comb finger design and can be considered as a crossbreed between a conventional comb finger design (0 = 0 a parallel-plate design (0 = 900). The design topology is verified both analytically, to show the validity of fundamental effects, and experimentally. Experimental results show the fabricated device based on the new comb finger design achieves twice the displacement of a standard rectangular comb finger based device under equal operating conditions, hence demonstrating twice the force generation capability, while at the same time maintaining overall device stability.
Publisher: Elsevier BV
Date: 2017
Publisher: IEEE
Date: 05-2014
Publisher: Springer Science and Business Media LLC
Date: 1996
DOI: 10.1557/PROC-429-239
Abstract: In this paper, the applicability of the charge-to-breakdown test for characterisation and comparison of differently grown ultra-thin gate dielectric films is considered. It is shown that the charge-to-breakdown parameter cannot be reliably used, because it is related to the electrons tunneling through the film, and not to the mechanism of positive charge accumulation which leads to time-dependent breakdown. It is found that the constant-voltage stress provides a consistent set of stress field vs time-to-breakdown data. Nitrided gate dielectrics show improved breakdown characteristics, compared to standard silicon-dioxide films.
Publisher: American Chemical Society (ACS)
Date: 03-05-2019
Abstract: In a resource-constrained world of an estimated 10 billion people in 2050 with the same material aspirations of today's high-income nations, there is no question: The future economy will need to be circular. From a policy perspective, the question is whether averting catastrophic environmental impacts through an accelerated transition to a global circular economy can also deliver sustained growth and jobs. The adoption of circular economy measures will have a range of effects on both domestic and foreign supply chains. Multiregional input-output (MRIO) analysis models the interdependencies between industries and within and between countries as well as between intermediate and final goods producers and consumers. It provides a useful toolbox for assessing social, environmental, and economy-wide impacts of the adoption of the circular economy. We project the MRIO database EXIOBASE to 2030 on the basis of the exogenously given parameters of the International Energy Agency's Energy Technology Perspective (IEA ETP) 6-degree scenario. We compare this business-as-usual (BAU) scenario and an alternative circular economy scenario. The circular economy scenario considers more recycling, reducing (material efficiency increase), repair, and reuse in relation to the BAU scenario. The adoption of circular economy measures has erse impacts on the economy and environmental pressures. Global material extraction is reduced by about 10% compared to the baseline, while the impact on employment is small but positive. In particular, the shift from resource extracting sectors to the service sector will provide more opportunities for high-skilled and female workers.
Publisher: Springer Science and Business Media LLC
Date: 24-06-2012
Abstract: Feature selection techniques use a search-criteria driven approach for ranked feature subset selection. Often, selecting an optimal subset of ranked features using the existing methods is intractable for high dimensional gene data classification problems. In this paper, an approach based on the in idual ability of the features to discriminate between different classes is proposed. The area of overlap measure between feature to feature inter-class and intra-class distance distributions is used to measure the discriminatory ability of each feature. Features with area of overlap below a specified threshold is selected to form the subset. The reported method achieves higher classification accuracies with fewer numbers of features for high-dimensional micro-array gene classification problems. Experiments done on CLL-SUB-111, SMK-CAN-187, GLI-85, GLA-BRA-180 and TOX-171 databases resulted in an accuracy of 74.9±2.6, 71.2±1.7, 88.3±2.9, 68.4±5.1, and 69.6±4.4, with the corresponding selected number of features being 1, 1, 3, 37, and 89 respectively. The area of overlap between the inter-class and intra-class distances is demonstrated as a useful technique for selection of most discriminative ranked features. Improved classification accuracy is obtained by relevant selection of most discriminative features using the proposed method.
Publisher: Elsevier BV
Date: 05-1989
Publisher: Royal Society of Chemistry (RSC)
Date: 2016
DOI: 10.1039/C5RA24797G
Abstract: The unique growth mechanism of alternating supply epitaxy enables uniform 3C-SiC to be deposited on multiple large-diameter Si wafers.
Publisher: AIP Publishing
Date: 16-04-2007
DOI: 10.1063/1.2730731
Abstract: Current conduction mechanisms of an atomic-layer-deposited Al2O3 gate on n-type 4H SiC have been systematically investigated, analyzed, and reported in this letter. It has been revealed that space charge limited, Poole-Frenkel (PF) emission, combination of PF emission and Fowler-Nordheim tunneling are the dominate current conduction mechanisms in the dielectric. Besides, Schottky emission has also been proposed as a possible leakage path at temperature beyond the investigated range. A relationship among the conduction mechanism, temperature, and applied electric field has been presented.
Publisher: IOP Publishing
Date: 17-04-2004
Publisher: The Electrochemical Society
Date: 2007
DOI: 10.1149/1.2773965
Publisher: Elsevier BV
Date: 02-2019
Publisher: IEEE
Date: 1998
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2021
Publisher: Elsevier BV
Date: 07-1997
Publisher: Elsevier BV
Date: 1985
Publisher: Elsevier BV
Date: 02-2007
Publisher: Trans Tech Publications, Ltd.
Date: 04-2010
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.645-648.511
Abstract: We have investigated the electrical and physical properties of the oxidized-SiN with or without post oxidation annealing (POA) in N2 gas. A significant reduction in interface-trap density (Dit) has been observed in the oxidized-SiN with N2 POA for 60 min if compared with other oxides. The reason for this has been explained in this paper.
Publisher: Elsevier BV
Date: 1999
Publisher: AIP Publishing
Date: 14-04-1997
DOI: 10.1063/1.118773
Abstract: Interfacial characteristics of Al/SiO2/n-type 6H–SiC metal–oxide–semiconductor capacitors fabricated by rapid thermal processing (RTP) with N2O and NO annealing are investigated. Interface state density was measured by a conductance technique at room temperature. RTP oxidation in pure O2 leads to an excellent SiO2/n-type 6H–SiC interface with interface state density in the order of 1010–1011 eV−1 cm−2. NO annealing improves the SiO2/n-type 6H–SiC interface, while N2O annealing increases the interface state density.
Publisher: IEEE
Date: 07-2008
Publisher: Elsevier BV
Date: 03-1995
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2008
Publisher: American Scientific Publishers
Date: 02-2012
Abstract: In present work, the effects of hydrogen and oxygen plasma treatments on the structural properties of carbon nanotubes (CNTs) synthesized by catalytic CVD (Chemical Vapor Deposition) have been systematically investigated. Field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy were used to characterize the microstructural changes of the CNTs. The oxygen plasma treatment resulted in that the nanoparticles were appeared at the surface of CNTs. At high r.f. power (300 Watt), the microstructure of CNT was changed from nanotube type to nano particles. Long plasma treatment time changed the CNT morphology dramatically. For hydrogen plasma, however, there was no change in microstructure of CNT From the Raman analysis, the crystallinity of CNT was deteriorated by the plasma treatment, regardless of plasma power, treatment time, and gas types. The CNTs treated in oxygen plasma for 90 min showed excellent dispersion properties in aqueous solution.
Publisher: Elsevier BV
Date: 02-2009
Publisher: IEEE
Date: 2006
Publisher: Springer Science and Business Media LLC
Date: 2008
Abstract: SiC films were deposited on Si substrate by low pressure hot-wall CVD using C 3 H 8 (5% in H 2 )-SiH 4 (2.5% in H 2 )-H 2 gas system at 1270°C and 1370°C. In this paper, we compare the electrical characteristics of MOS capacitors fabricated on the 3C-SiC films grown at high and low temperatures, 1370°C and 1270°C, respectively. Although the cross-sectional TEM images indicate similar micro-structural quality of the SiC/Si interface for both temperatures, a quicker elimination rate of stacking faults with increasing thickness was observed in the films grown at 1370°C. Rocking curves from XRD measurements also indicate better crystallinity of the films grown at 1370°C. On the other hand, atomic force microscopy shows that the average surface roughness reduces with the reduction in growth temperature. MOS capacitors were made on films grown at both temperatures and characterized by high-frequency capacitance-voltage (HFCV), conductance-voltage ( G-V ), and current-voltage ( I-V ) measurements at room temperature. The MOS capacitors fabricated on both films exhibit good and almost identical C-V characteristics. Measurements of current-voltage characteristics in accumulation region showed smaller leakage for the film deposited at 1270°C. It is concluded that the decrease of the deposition temperature from 1370°C to 1270°C does not bring any remarkable negative impact on the interface properties of fabricated MOS capacitors.
Publisher: Trans Tech Publications, Ltd.
Date: 09-2008
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.600-603.811
Abstract: Physical and electrical properties of sol-gel derived SiO2 thick film (100-130 nm) deposited on n-type 4H-SiC have been investigated. The oxide was annealed in argon gas ambient for 30 minutes at 650, 750, 850, and 950°C, in order to optimize the oxide properties. Results indicated that the oxide is denser with a significant reduction in percentage of porosity as the annealing temperature increases, except for s le annealed at 950°C. The oxide annealed at 850°C was having values of refractive index and dielectric constant close to the values reported in thermally grown SiO2 and it has demonstrated the lowest leakage current density and total interface trap density. Viscous shear flow effect has been proposed as the main contributor for the reduction of physical properties when the oxide was annealed at 950°C.
Publisher: IEEE
Date: 07-2008
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 06-2003
Publisher: AIP Publishing
Date: 22-03-2010
DOI: 10.1063/1.3367891
Abstract: In this letter, we have reported electrical and physical properties of rapid thermal annealed (RTA) Al2O3 stacking dielectric on n-type 4H-SiC. The effects of SiN-reaction barrier layer (RBL) between Al2O3 and thermal-nitrided SiO2 on SiC-based metal-oxide-semiconductor characteristics have been investigated and compared. A significant reduction in oxide-semiconductor interface-trap density (Dit), improvement in dielectric breakdown field and reliability has been observed after the SiN-RBL has been introduced between Al2O3 and SiO2. High-resolution transmission electron microscope and Auger electron spectroscopy analyses reveal that the SiN-RBL suppresses Al diffusion into the nitrided SiO2 during RTA process.
Publisher: Elsevier BV
Date: 2006
Publisher: Trans Tech Publications, Ltd.
Date: 2013
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.740-742.279
Abstract: In this paper, a color chart was defined for thin SiC films grown on Si substrates. For SiC films thinner than 500 nm, the surface color was observed using an optical microscope with the incident light normally illuminated on the SiC surface. An image of the surface was then taken by a camera attached to the optical microscope and the surface color was defined using RGB code. For SiC films thicker than 500 nm, the image taken by the camera did not represent the real color of the SiC film. Therefore, for these thicker SiC films, the colors were defined by observing the films under daylight fluorescent lighting by naked eyes. It was found that the colors of the SiC films vary periodically as the thickness increased. No color saturation was found for SiC films up to 1185 nm thick.
Publisher: SAGE Publications
Date: 02-2007
DOI: 10.1177/0310057X0703500105
Abstract: Critically ill patients are often unable to make decisions about life-sustaining treatments and surrogate decisionmakers are relied upon. However, it is unclear how accurately the surrogates’ decisions reflect patients’ intentions and expectations. We interviewed 36 pairs of patients and their appointed surrogate decision-makers about their decisions regarding nine treatments in each of three scenarios. The scenarios were persistent vegetative state, coma with likely neurological damage and chronic disease with dementia. The patients were interviewed 24 hours after they had undergone elective surgery under general anaesthesia. The surrogates were interviewed separately by the same interviewer. There was poor agreement between decisions made by the patients and their surrogates. The patients’ and surrogates’ summary scores (median (interquartile range) [range]) for treatments were 0 (0-4) [0-9] vs 8 (0-9) [0-9] for the vegetative state scenario, 3 (0-9) [0-9] vs 9 (0-9) [0-9] for the coma scenario and 3 (0-9) [0-9] vs 9 (4-9) [0-9] for the chronic disease scenario. The significantly higher surrogate scores suggest that the surrogates’ decisions would have resulted in the patients having far more treatment than the patients would have wanted. In our participants, there was poor agreement between the decisions made by surrogates and patients. Further study is needed on measures such as facilitated discussions, advance directives and the difficulties that surrogates face, in order to improve the accuracy of surrogates’ decisions and respect of patients’ autonomy.
Publisher: Trans Tech Publications, Ltd.
Date: 06-2015
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.821-823.205
Abstract: To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si surface without forming SiC and graphitic islands during the surface cleaning and before the carbonisation process. In this paper, a novel in-situ surface cleaning method designed for the hetero-epitaxial growth of SiC on Si substrate is developed using a custom-made low-pressure chemical vapour deposition reactor. The results indicate that the combination of r ing in oxygen and subsequent flowing of SiH 4 avoids the contamination of Si, enables the oxide layer to be removed smoothly, and subsequently creates a smooth Si surface with regular atomic steps. SiC grown on off-axis Si has better crystallinity and significantly smaller roughness than that grown on on-axis Si.
Publisher: Elsevier BV
Date: 12-2010
Publisher: Institution of Engineering and Technology (IET)
Date: 1993
DOI: 10.1049/EL:19930901
Publisher: Elsevier BV
Date: 09-2008
Publisher: Informa UK Limited
Date: 2009
Publisher: Elsevier BV
Date: 03-2008
Publisher: Springer Science and Business Media LLC
Date: 1995
DOI: 10.1557/PROC-387-233
Abstract: The resultant physical and electrical characteristics of dielectric layers grown or annealed in nitric oxide are presented. The layers formed or modified in nitric oxide are thinner but generally superior in quality to those grown in nitrous or dry oxide. The indications are that dielectrics formed or annealed in nitric oxide are a viable alternative to other techniques of producing ultra thin (≤ 5nm) dielectrics.
Publisher: Elsevier BV
Date: 12-1998
Publisher: Springer Science and Business Media LLC
Date: 1993
DOI: 10.1557/PROC-303-413
Abstract: The results of measurements of the physical properties of the dielectric grown on various orientations and surface doping concentration on silicon in an N 2 O environment are presented. We use this data to produce a model that predicts the dielectric thickness as a function of time and temperature.
Publisher: Trans Tech Publications, Ltd.
Date: 05-2005
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.483-485.563
Abstract: Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the dangling-bond-type defects commonly observed in the oxidized silicon. Among different models of these SiC/oxide interface states advanced during the past decade, two have received substantial experimental support. This first one is the “carbon cluster” model, which ascribes the traps with energy levels in the SiC bandgap to inclusions of elemental carbon formed during the SiC surface treatment and subsequent oxidation. The second model invokes intrinsic defects of SiO2 to account for the high density of interface states in the energy range close to the conduction band of SiC. Achievements in reducing the SiC/SiO2 defect density are discussed.
Publisher: Springer Science and Business Media LLC
Date: 1996
DOI: 10.1557/PROC-429-245
Abstract: With the requirement for reduced dielectric thickness and improved durability in silicon MOS devices, new growth techniques and material composition are constantly being developed. An important part of this development is the electrical characterisation of the dielectric material and in particular the properties of the dielectric-semiconductor interface. This paper presents a study of damage caused to the dielectrics of MOS capacitors which have been subjected to either constant current stressing or RF plasma etching. The density and energy position of fast interface states and fixed oxide charges were measured using standard capacitance-voltage techniques. These results are then compared with a new current transient technique, which has been developed to measure slow interface states having a range of response times. This new technique steps the surface Fermi level through the silicon bandgap and the resulting current transients provide information on trap response times at each energy position. The response time can then be related to the tunneling distance from the trap to the bulk silicon. This technique has provided important information about the energies and response times of traps generated in damaged dielectrics, and should prove to be a useful tool for damage evaluation in the future.
Publisher: Springer Science and Business Media LLC
Date: 1993
DOI: 10.1557/PROC-303-417
Abstract: In this paper both the substrate doping concentration and single crystal silicon orientation are considered when dielectrics are grown on silicon in a nitrous oxide environment. Our initial preliminary findings show that for heavily doped subtrates thicker layers of dielectric result compared to their lower doped counterparts. Furthermore we find a crossover point of temperature for growth rate for compared to . We believe that the different growth rates are attributable to nitrogen build up at the dielectric interface.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2009
Publisher: Elsevier BV
Date: 04-1991
Publisher: Trans Tech Publications, Ltd.
Date: 05-2005
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.483-485.689
Abstract: In this paper, the electrical properties of pre- and post-rapid thermal annealed 4H SiC-based gate oxide grown in 10% nitrous oxide (N2O) and in dry oxygen have been investigated, compared, and reported for the first time. After treating the nitrided gate oxide in rapid thermal annealing (RTA), oxide breakdown characteristic has been improved significantly. This improvement has been attributed to the reduction of SiC–SiO2 interface-trap density and the generation of positive oxide charge, acting as an electron-trapping center. However, deleterious effects have been observed in non-nitrided oxide after subjected to the same RTA treatment. The differences in oxide-breakdown strength of these oxides have been explained and modeled.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2000
DOI: 10.1109/63.817369
Publisher: AIP Publishing
Date: 2007
DOI: 10.1063/1.2430308
Abstract: The effects of thermal nitrided gate-oxide thickness on n-type 4H silicon-carbide-based metal-oxide-semiconductor characteristics have been reported. Seven different thicknesses of oxide (tox), ranging from 2to20nm, have been investigated. It has been shown that effective oxide charge (Qeff) and total interface-trap density (Nit) have demonstrated a cyclic trend as tox is increased. These observations have been explained in the letter. Correlations of Qeff and Nit with oxide breakdown field and current transport mechanism in these oxides have also been established and explained.
Publisher: American Vacuum Society
Date: 28-10-2014
DOI: 10.1116/1.4900418
Abstract: In this paper, the RF sputtering of polycrystalline AlN thin film on epitaxial 3C-SiC(100) on Si(100) substrate is presented. The effect of nitrogen concentration, deposition temperature and sputtering pressure are studied. These parameters are optimized to improve the crystal quality and deposition rate. Nitrogen concentration was varied from 40% to 100%, and it was found that the maximum deposition rate was observed at 40%. The RF bias power on substrate was also varied from 100 to 400 W, and it was observed that the deposition rate increases proportionally. The process temperature was varied from 200 to 400 °C to see the effect on the crystal quality and deposition rate it was found that temperature variation does not yield significant shifts. This paper is able to demonstrate a successful RF sputtering of a polycrystalline AlN (100), (101), and (002) on epitaxial 3C-SiC(100) using RF power supply of 550 W.
Publisher: Informa UK Limited
Date: 06-1995
Publisher: Elsevier BV
Date: 05-2009
Publisher: IEEE
Date: 1996
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2022
Publisher: SPIE
Date: 08-10-1999
DOI: 10.1117/12.368421
Publisher: IOP Publishing
Date: 29-10-2018
Publisher: AIP Publishing
Date: 29-03-1993
DOI: 10.1063/1.108633
Abstract: In this letter, a model for growth kinetics of ultrathin dielectrics obtained by oxidation of silicon in a nitrous oxide environment is proposed. The model assumes that the oxide growth is limited by time-dependent interface reaction, which is slowed down and eventually completely blocked as oxide growth sites are neutralized by nitrogen atoms. The model fits experimental data extremely well, both with time and temperature.
Publisher: Trans Tech Publications, Ltd.
Date: 02-2014
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.778-780.997
Abstract: Power MOSFETs based on 4H-SiC have recently been commercialized and so circuit designers require SPICE models for simulation purposes in a range of applications including switch-mode power supplies. We present a selection of SPICE LEVEL 3 parameters and equations that can be used for effective circuit simulation of these MOSFETs, taking into account their unique characteristics for both static and dynamic operation.
Publisher: Wiley
Date: 11-11-2008
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2021
Publisher: Springer Science and Business Media LLC
Date: 07-05-2011
Publisher: Wiley
Date: 12-2001
DOI: 10.1046/J.1440-1711.2001.01043.X
Abstract: Numerous studies have associated carriage of HLA-DRB1*1501, DQA1*0102 and DQB1*0602 (DR15, DQ6) with dominant resistance to type 1 diabetes and have concluded that one or more of the component HLA class II molecules mediate this effect. Mechanisms for MHC class II-mediated resistance to diabetes have been proposed from studies of transgenic mice, usually using the diabetes-prone non-obese diabetic (NOD) strain. However, these studies have not reached any consensus on a plausible mechanism. In this study we question why the role of central MHC genes in resistance to diabetes has not been addressed, as the central MHC carries markers of susceptibility to diabetes in linkage disequilibrium with several genes with known or putative immunoregulatory functions. To illustrate the type of studies required to address this issue, we selected diabetes patients and control subjects for carriage of HLA-DR15 and the C allele at position +738 in the inhibitor of kappa B-like gene (IKBL). These alleles mark the 7.1 haplotype (HLA-A3, B7, IKBL738*C, DR15, DQ6). HLA-DR15 was the most effective marker of resistance, but an effect may be evident with IKBL738*C in a larger study. Moreover, carriage of the entire haplotype was particularly rare in patients. The best explanation for this is that the critical gene lies between IKBL and HLA-DRB1, and is more closely linked to HLA-DRB1. Candidate genes at the centromeric end of the central MHC are reviewed, highlighting the need for further study.
Publisher: IOP Publishing
Date: 05-2010
Publisher: Trans Tech Publications, Ltd.
Date: 10-2006
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.527-529.975
Abstract: High-resolution transmission electron microscopy (HR TEM) reveals an atomically flat SiC surface after oxidation in either NO or dry O2 ambients. This reopens the question of the origin of the electronically active defects at the SiO2–SiC interface, whose density remains orders of magnitude higher than in the SiO2–Si interface. Capacitance-transient measurements, analysed in this paper, demonstrate that the dominant electronically active defects are in the oxide at tunneling distances from the SiC surface (near-interface traps). The HR TEM results cannot rule out that these traps are related to carbon/oxygen bonds or even nanometer-sized carbon clusters, which resolves the apparent inconsistency with the earlier experimental evidence of carbon accumulation at (or near) the SiO2–SiC interface.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2000
DOI: 10.1109/81.841918
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 07-2002
Publisher: Oxford University Press (OUP)
Date: 02-2012
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2020
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 11-2021
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-1995
DOI: 10.1109/55.400733
Publisher: The Optical Society
Date: 02-08-2016
DOI: 10.1364/OME.6.002725
Publisher: WORLD SCIENTIFIC
Date: 15-08-2016
Publisher: Elsevier BV
Date: 2006
Publisher: Elsevier BV
Date: 04-2010
Publisher: Trans Tech Publications, Ltd.
Date: 02-2014
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.778-780.627
Abstract: In an attempt to significantly reduce the amount of nitric oxide (NO), commonly used to improve the quality of gate oxides on 4H–SiC, a series of alternative gate oxidation processes using a combination of O 2 and NO gas mixtures at low partial pressures were investigated. The properties of 4H–SiC/SiO 2 interfaces on n-type MOS capacitors were examined by the measurement of accumulation conductances over a range of frequencies. Oxide integrity was evaluated by current–voltage measurements and by the extraction of the conduction band offset barrier heights through Fowler–Nordheim (F–N) analysis. A notable reduction of accumulation conductance, indicating a reduction of near-interface traps (NITs), was observed over all measured frequencies for oxidation processes containing NO with a partial-pressure of only 2%. Gate oxides grown in mixture of O 2 and NO at low-partial-pressures demonstrated a considerable improvement of dielectric properties, increasing the barrier height to near theoretical values.
Publisher: AIP Publishing
Date: 15-11-2001
DOI: 10.1063/1.1412579
Abstract: Experiments have demonstrated that nitridation provides critically important improvements in the quality of SiO2–SiC interface. This article provides results and analysis aimed at developing the much needed understanding of the mechanisms and effects associated with both annealing of pregrown oxides and direct growth in NO and N2O environments. According to the model proposed in the article, nitridation plays a double role: (1) creation of strong Si≡N bonds that passivate interface traps due to dangling and strained bonds, and (2) removal of carbon and associated complex silicon–oxycarbon bonds from the interface. This understanding of the effects of nitridation is experimentally verified and used to design a superior process for gate oxide growth in the industry-preferred N2O environment.
Publisher: SPIE
Date: 14-11-1997
DOI: 10.1117/12.293578
Publisher: AIP Publishing
Date: 15-05-2009
DOI: 10.1063/1.3132094
Abstract: In spite of the irreversible nature of macroscopic processes, our understanding of the fundamental physical phenomena remains limited to reversible models (the Loschmidt’s paradox). We propose a direct irreversible model for the probability per unit time that an electron will be emitted from an isolated trap. This resolves a number of problems, including (1) the dubious link between emission measurements and the parameters of the independent capture process and (2) the elusive meaning of the degeneracy factor in the equilibrium Fermi–Dirac distribution.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2011
Publisher: IEEE
Date: 2002
Publisher: SPIE
Date: 28-12-2005
DOI: 10.1117/12.639390
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 1994
DOI: 10.1109/66.286837
Publisher: Elsevier BV
Date: 03-2003
Publisher: Trans Tech Publications, Ltd.
Date: 06-2004
Publisher: Informa UK Limited
Date: 06-1995
Publisher: Trans Tech Publications, Ltd.
Date: 06-2004
Publisher: Institute of Advanced Engineering and Science
Date: 12-2016
DOI: 10.11591/IJECE.V6I6.13265
Abstract: This paper analyzes the subthreshold swing in asymmetric double gate MOSFETs with sub-20 nm channel lengths. The analysis of the carrier transport in the subthreshold region of these nano scaled MOSFET includes tunneling as an important additional mechanism to the thermionic emission. It is found that the subthreshold swing is increasing due to tunneling current and that the performance of nano scaled MOSFETs is degraded. The degradation of the subthreshold swing due to tunneling is quantified using analytical potential distribution and Wentzel–Kramers–Brillouin (WKB) approximation in this paper. This analytical approach is verified by two dimensional simulation. It is shown that the degradation of subthreshold swing increases with both reduction of channel length and increase of channel thickness. We also show that the subthreshold swing is increasing in case of different top and bottom gate oxide thicknesses.
Publisher: SPIE
Date: 16-09-1994
DOI: 10.1117/12.186790
Publisher: IEEE
Date: 1998
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2015
Publisher: The Electrochemical Society
Date: 2010
DOI: 10.1149/1.3267508
Publisher: Springer Science and Business Media LLC
Date: 1997
DOI: 10.1557/PROC-470-413
Abstract: Silicon-carbide offers great potential as a wide bandgap semiconductor for electronic applications. A good quality oxide dielectric will allow MOS device fabrication and in particular N-channel mosfets for their higher electron mobility. To date oxides on N-type silicon-carbide (nitrogen doped) have exhibited excellent characteristics while on P-type (aluminium or boron doped) the characteristics are poor. This paper presents results for the oxidation and subsequent nitridation of N and P-type silicon-carbide. It illustrates the role that nitrogen at the interface has in improving the trap densities and that nitric oxide provides the nitrogen well. Nitrous oxide, previously used to nitride silicon dioxide on silicon, is shown to substantially deteriorate the interface density of states for both N and P-type substrates.
Publisher: Trans Tech Publications, Ltd.
Date: 02-1998
Publisher: Institution of Engineering and Technology (IET)
Date: 12-10-1995
DOI: 10.1049/EL:19951258
Publisher: IEEE
Date: 2002
Publisher: Springer Science and Business Media LLC
Date: 02-1999
Publisher: AIP Publishing
Date: 23-05-2002
DOI: 10.1063/1.1483125
Abstract: This work presents improved channel mobility of n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) on 4H–SiC, achieved by gate-oxide nitridation in nitric oxide. Lateral enhancement mode MOSFETs were fabricated using standard polycrystalline silicon gate process and 900 °C annealing for the source and drain contacts. The low field mobility of these MOSFETs was as high as 48 cm2/Vs together with a threshold voltage of 0.6 V, while the interface state density—determined from the subthreshold slope—was about 3×1011 eV−1 cm−2. The 43-nm-thick gate oxide of coprocessed metal–oxide–semiconductor structures exhibited a breakdown field strength of 9 MV/cm.
Publisher: Trans Tech Publications, Ltd.
Date: 09-2008
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.600-603.731
Abstract: We have investigated the electrical and physical properties of high-temperature (1300, 1400 oC) grown dry oxide with or without post oxidation annealing (POA) in nitric oxide (NO) gas. A significant reduction in interface-trap density (Dit) has been observed in 1300 oC-grown dry oxide with or without NO POA if compared with the Dit of 1400 oC-grown dry oxide. The reason for this has been explained in this paper.
Publisher: Elsevier BV
Date: 08-2004
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 05-1996
DOI: 10.1109/66.492821
Publisher: Elsevier BV
Date: 11-1989
Publisher: Trans Tech Publications, Ltd.
Date: 05-2017
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.897.719
Abstract: This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger–Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current–voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.
Publisher: Elsevier BV
Date: 03-2017
Publisher: AIP Publishing
Date: 07-11-2016
DOI: 10.1063/1.4967224
Publisher: IOP Publishing
Date: 08-08-2008
DOI: 10.1143/JJAP.47.6272
Publisher: Elsevier BV
Date: 2008
Publisher: Trans Tech Publications, Ltd.
Date: 04-2002
Publisher: AIP Publishing
Date: 22-01-2003
DOI: 10.1063/1.1532103
Abstract: An analysis of fast and slow traps at the interface of 4H–SiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation.
Publisher: IOP Publishing
Date: 09-2017
Publisher: SPIE
Date: 09-09-1994
DOI: 10.1117/12.186066
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 04-2006
Publisher: SPIE
Date: 09-09-1994
DOI: 10.1117/12.186065
Publisher: Springer Science and Business Media LLC
Date: 12-2003
Publisher: Elsevier BV
Date: 03-2010
Publisher: AIP Publishing
Date: 16-04-2003
DOI: 10.1063/1.1555696
Abstract: A systematic electrical and physical characterization of gate oxides on 4H-SiC, grown in diluted N2O at 1300 °C, has been performed. Electrical characterization by the high-frequency C-V technique, conductance technique, and slow trap profiling method reveals that the densities of interface and near-interface traps, and the effective oxide charge for gate oxides grown in 10% N2O are the lowest, compared to gate oxides grown in 100% and 0.5% N2O. These results are supported by physical characterizations using x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and atomic force microscopy. It has been shown that carbon clusters, accumulated at the SiC-SiO2 interface, directly influence the roughness of the interface and the densities of the interface and near-interface traps.
Publisher: AIP Publishing
Date: 02-02-2021
DOI: 10.1063/5.0037744
Abstract: The state-of-the-art technology for gate oxides on SiC involves the introduction of nitrogen to reduce the density of interface defects. However, SiC metal–oxide–semiconductor (MOS) field-effect transistors still suffer from low channel mobility even after the nitridation treatment. Recent reports have indicated that this is due to near-interface traps (NITs) that communicate with electrons in the SiC conduction band via tunneling. In light of this evidence, it is clear that conventional interface trap analysis is not appropriate for these defects. To address this shortcoming, we introduce a new characterization method based on conductance–temperature spectroscopy. We present simple equations to facilitate the comparison of different fabrication methods based on the density and location of NITs and give some information about their origin. These techniques can also be applied to NITs in other MOS structures.
Publisher: Springer Netherlands
Date: 1993
Publisher: AIP Publishing
Date: 15-08-1996
DOI: 10.1063/1.363050
Abstract: This article analyses the validity of the widely used semi-empirical oxidation models based on the Deal-Grove formulation in the light of recent advances in the understanding of the oxidation process. An extension of the Deal-Grove formulation is suggested to account for the newest experimental results. The introduced extension incorporates the effect of accelerated initial growth into the theoretical oxidation growth model. There is a direct relationship between the newly-derived theoretical term for the initial growth rate and its widely-used empirical counterpart.
Publisher: IEEE
Date: 10-2017
Publisher: Trans Tech Publications, Ltd.
Date: 05-2017
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.897.167
Abstract: The existence of a turnaround in flat-band voltage shift of stressed MOS capacitors, fabricated on N-type 4H–SiC substrates, is reported in this paper. The turnaround is observed by room-temperature C–V measurements, after two minutes gate-bias stressing of the MOS capacitors at different temperatures. The existence of this turnaround effect demonstrates that a mechanism, in addition to the well-stablished tunneling to the near-interface oxide traps, is involved in the threshold voltage instability of 4H–SiC MOSFETs. This newly identified mechanism occurs due to charge redistribution of the compound polar species that exist in the SiO 2 –SiC transitional layer.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2018
Publisher: Elsevier BV
Date: 03-2016
Publisher: Springer Berlin Heidelberg
Date: 2010
Publisher: Elsevier BV
Date: 06-1992
Publisher: Elsevier BV
Date: 10-2008
Publisher: Elsevier BV
Date: 04-1991
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 03-2016
Publisher: Springer Science and Business Media LLC
Date: 04-07-2018
Publisher: Hindawi Limited
Date: 2009
DOI: 10.1155/2009/572865
Abstract: Cubic-SiC nanowires were synthesized using activated carbon powder and Si substrate in vacuum at 1200–1350°C for 1–4 hours. The nanowires were grown according to the following proposed mechanisms: (1) diffusion of C/CO into Si substrate, (2) weakening of Si bond and atomic kick-out, (3) formation of Si-C in vapor phase, (4) formation of saturated SiC layer, (5) formation of pyramid-like SiC nanostructure, and (6) formation of SiC nanowires.
Publisher: Trans Tech Publications, Ltd.
Date: 05-2000
Publisher: AIP Publishing
Date: 09-09-2013
DOI: 10.1063/1.4821362
Abstract: Based on the insight that the Fermi level in a metal–oxide–semiconductor field-effect transistor (MOSFET) channel is set in the conduction band, due to the quantum confinement of the channel electrons, this letter provides an experimental demonstration that the near-interface traps responsible for degradation of channel-carrier mobility in SiC MOSFETs are energetically aligned to the conduction band of SiC. The experimental demonstration is based on conductance measurements of MOS capacitors in accumulation. The accumulation conductance does not change with temperature, which demonstrates that there is channel-carrier communication with the near-interface traps by tunneling.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-1998
DOI: 10.1109/55.704399
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 1996
DOI: 10.1109/16.481727
Publisher: IEEE
Date: 05-2008
Publisher: EDP Sciences
Date: 23-04-2010
Publisher: Royal Society of Chemistry (RSC)
Date: 2017
DOI: 10.1039/C7TA05798A
Abstract: A top-down strategy is developed to prepare ultrathin Fe 2 O 3 nanoflakes (approximately 4 nm thick). The ultrathin nanoflakes showed a large specific capability, high rate performance and long lifetime as anode material for lithium ion batteries.
Publisher: Elsevier BV
Date: 1995
Publisher: IEEE
Date: 2008
Publisher: Trans Tech Publications, Ltd.
Date: 2001
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2023
Publisher: IEEE
Date: 1996
Publisher: Elsevier BV
Date: 02-2000
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 1999
DOI: 10.1109/2944.806748
Publisher: Informa UK Limited
Date: 2008
Publisher: American Physical Society (APS)
Date: 11-10-2019
Publisher: Springer Science and Business Media LLC
Date: 1998
DOI: 10.1557/PROC-512-223
Abstract: In this paper the effect of NO nitridation on the electrical characteristics of the oxides grown on p-type 4H SiC has been investigated. The results show that NO nitrided oxide has a lower interfacial trap density and a lower net oxide charge compared to N 2 annealed oxides.
Publisher: AIP
Date: 2009
DOI: 10.1063/1.3160192
Publisher: IEEE
Date: 11-2015
Publisher: MDPI AG
Date: 10-02-2023
DOI: 10.3390/EN16041771
Abstract: The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric. Specifically, these defects impact the channel-carrier mobility and threshold voltage of SiC MOSFETs, depending on their physical location and energy levels. To characterize these defects, techniques have evolved from those used for Si devices to techniques exclusively designed for the SiC MOS structure and SiC MOSFETs. This paper reviews the electrically active defects at and near the interface between SiC and the gate dielectric in SiC power MOSFETs and MOS capacitors. First, the defects are classified according to their physical locations and energy positions into (1) interface traps, (2) near interface traps with energy levels aligned to the energy gap, and (3) near-interface traps with energy levels aligned to the conduction band of SiC. Then, representative published results are shown and discussed for each class of defect.
Publisher: Elsevier BV
Date: 09-2012
Publisher: IEEE
Date: 1997
Publisher: Elsevier BV
Date: 04-2002
Publisher: Trans Tech Publications, Ltd.
Date: 05-2016
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.858.603
Abstract: This paper presents a new method to quantify near interface oxide traps (NIOTs) that are responsible for threshold voltage instability of 4H-SiC MOSFETs. The method utilizes the shift observed in capacitance–voltage ( C–V ) curves of an N-type MOS capacitor. The results show that both shallow NIOTs with energy levels below the bottom of conduction band and NIOTs with energy levels above the bottom of the conduction band of SiC are responsible for the C–V shifts, and consequently, for the threshold voltage instabilities in MOSFETs. A higher density of NIOTs is measured at higher temperatures.
Publisher: SPIE
Date: 10-1999
DOI: 10.1117/12.364497
Publisher: SPIE
Date: 10-1999
DOI: 10.1117/12.364498
Publisher: Springer Science and Business Media LLC
Date: 06-01-2971
DOI: 10.1038/S41598-019-40287-1
Abstract: Attempts to model the current through Schottky barrier diodes using the two fundamental mechanisms of thermionic emission and tunnelling are adversely impacted by defects and second order effects. This has led to the publication of countless different models to account for these effects, including some with non-physical parameters. Recently, we have developed silicon carbide Schottky barrier diodes that do not suffer from second order effects, such as excessive leakage, carrier generation and recombination, and non-uniform barrier height. In this paper, we derive the foundational current equations to establish clear links between the fundamental current mechanisms and the governing parameters. Comparing these equations with measured current–voltage characteristics, we show that the fundamental equations for tunnelling and thermionic emission can accurately model 4H silicon carbide Schottky barrier diodes over a large temperature and voltage range. Based on the obtained results, we discuss implications and misconceptions regarding barrier inhomogeneity, barrier height measurement, and reverse-bias temperature dependencies.
Publisher: Elsevier BV
Date: 09-2015
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 08-2018
Publisher: Elsevier BV
Date: 09-2001
Publisher: Wiley
Date: 16-02-1992
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 12-2020
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 10-2002
Publisher: Elsevier BV
Date: 10-1987
Publisher: AIP Publishing
Date: 27-06-1994
DOI: 10.1063/1.111205
Abstract: High quality ultrathin silicon oxynitride films (3.5 nm) have been grown in a nitric oxide ambient using rapid thermal processing. The physical and electrical properties of these films are compared with those formed in a nitrous oxide environment. X-ray photoelectron spectroscopy (XPS) results show that the nitric oxide (NO) grown films have a significantly different nitrogen distribution compared to the nitrious oxide (N2O) grown films. The capacitance-voltage and current-voltage characteristics of the NO grown and NO-modified films are, in general, better than those of the same thickness grown in either N2O or O2.
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Date: 2000
DOI: 10.1109/66.892635
Publisher: American Physical Society (APS)
Date: 15-07-1996
Publisher: Elsevier BV
Date: 2012
No related grants have been discovered for Sima Dimitrijev.