ORCID Profile
0000-0001-9206-2767
Current Organisation
University of California, Irvine
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Publisher: AIP Publishing
Date: 02-2012
DOI: 10.1063/1.3679140
Abstract: A transfer matrix model of a luminescent down-shifter (LDS) layer, consisting of silicon nanocrystals (Si-NCs) embedded in a silicon oxide matrix, on a silicon solar cells is presented. To enhance the efficiency of the silicon solar cell, we propose using a SiO2/Si-NCs double layer stack, as an anti-reflection-coating (ARC) and as a LDS material. The optical characteristics of this stack have been simulated and optimized as a front surface coating. The cell performances have been simulated by means of a two-dimensional device simulator and compared with the performances of a reference silicon solar cell. We found a 6% relative enhancement of the energy conversion efficiency with respect to the reference cell. We demonstrate that this enhancement results from the lower reflectance and from the down-shifter effect of the Si-NCs activated coating stack.
Publisher: American Chemical Society (ACS)
Date: 10-06-2021
Publisher: The Optical Society
Date: 08-01-2018
DOI: 10.1364/BOE.9.000529
Publisher: SPIE
Date: 29-02-2016
DOI: 10.1117/12.2218517
Publisher: Springer Science and Business Media LLC
Date: 26-02-2019
DOI: 10.1038/S41598-019-39047-Y
Abstract: We demonstrate an electrically tunable ultracompact plasmonic modulator with large modulation strength ( dB) and a small footprint (~1 μm in length) via plasmon-induced transparency (PIT) configuration. The modulator based on a metal-oxide-semiconductor (MOS) slot waveguide structure consists of two stubs embedded on the same side of a bus waveguide forming a coupled system. Heavily n-doped indium tin oxide (ITO) is used as the semiconductor in the MOS waveguide. A large modulation strength is realized due to the formation of the epsilon-near-zero (ENZ) layer at the ITO-oxide interface at the wavelength of the modulated signal. Numerical simulation results reveal that such a significant modulation can be achieved with a small applied voltage of ~3V. This result shows promise in developing nanoscale modulators for next generation compact photonic lasmonic integrated circuits.
Publisher: Elsevier BV
Date: 02-2018
Publisher: IEEE
Date: 07-2015
Publisher: IOP Publishing
Date: 24-01-2018
Publisher: Springer Science and Business Media LLC
Date: 05-02-2018
DOI: 10.1038/S41598-018-19633-2
Abstract: We report a novel optical waveguide design of a hollow step index fiber modified with a thin layer of indium tin oxide (ITO). We show an excitation of highly confined waveguide mode in the proposed fiber near the wavelength where permittivity of ITO approaches zero. Due to the high field confinement within thin ITO shell inside the fiber, the epsilon-near-zero (ENZ) mode can be characterized by a peak in modal loss of the hybrid waveguide. Our results show that such in-fiber excitation of ENZ mode is due to the coupling of the guided core mode to the thin-film ENZ mode. We also show that the phase matching wavelength, where the coupling takes place, varies depending on the refractive index of the constituents inside the central bore of the fiber. These ENZ nanostructured optical fibers have many potential applications, for ex le, in ENZ nonlinear and magneto-optics, as in-fiber wavelength-dependent filters, and as subwavelength fluid channel for optical and bio-photonic sensing.
Publisher: Wiley
Date: 05-01-2023
Abstract: Experimental excitation of a highly confined epsilon‐near‐zero (ENZ) mode in a side‐polished optical fiber coated with a deep subwavelength thick layer of aluminum‐doped zinc oxide (AZO) is reported. The uniform AZO layer on the fiber is fabricated by atomic layer deposition technique and optimized to exhibit close‐to‐zero permittivity at the near‐infrared wavelength. Highly polarization‐ and wavelength‐dependent transmission with strong resonance strength up to 25 dB is observed in a 30‐nm ENZ‐coated fiber that is 17 mm long. Different from the excitation of the ENZ mode in a planar conducting oxide thin film, the hybrid ENZ mode can be excited via direct phase matching between the fundamental mode of the fiber and the ENZ mode supported by the AZO thin film. The hybrid ENZ mode in the fiber exhibits a relatively long propagation/light–matter interaction length which is a few orders of magnitude longer than those on the planar ENZ substrates. It is further shown that the hybrid resonance in the ENZ fiber can be actively tuned through the refractive index of surrounding medium and the large ENZ's nonlinearity. These ENZ‐optical fibers serve as emerging in‐fiber optical devices, such as advanced in‐fiber ultrafast optical switches/modulators, mode‐locked fiber lasers, and in‐fiber optical gas/biomolecule sensors.
Publisher: OSA
Date: 2018
Publisher: Wiley
Date: 08-02-2013
Publisher: American Chemical Society (ACS)
Date: 23-04-2018
Publisher: Walter de Gruyter GmbH
Date: 06-03-2023
Abstract: Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. C ione, et al. [ Phys. Rev. B , vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and the development of near zero refractive index photonics, nonlinear optics, thermal, and quantum optics in the ENZ regime.
Publisher: The Optical Society
Date: 18-07-2019
DOI: 10.1364/OL.44.003653
Publisher: Wiley
Date: 25-06-2020
Publisher: AIP Publishing
Date: 19-12-2011
DOI: 10.1063/1.3671671
Abstract: Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. We demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Our results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.
Publisher: Royal Society of Chemistry (RSC)
Date: 2023
DOI: 10.1039/D3TC02909C
No related grants have been discovered for Aleksei Anopchenko.