ORCID Profile
0000-0003-0905-2547
Current Organisation
Queensland University of Technology
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Research Topics
In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Top 5 Research Topics
ANZSRC Field of Research (FoR)
Materials engineering | Functional Materials | Functional materials | Materials Engineering | Nanomanufacturing | Nanotechnology | Environmental nanotechnology and nanometrology | Environmental Nanotechnology | Nanotechnology not elsewhere classified
ANZSRC Socio-Economic Objective (SEO)
Management of Greenhouse Gas Emissions from Electricity Generation | Renewable Energy not elsewhere classified | Integrated Circuits and Devices | Management of Greenhouse Gas Emissions from Manufacturing Activities | Expanding Knowledge in Technology |
Related Links
Publications
Enhancing thermoelectric performance of (Cu1-xAgx)2Se via CuAgSe secondary phase and porous design
Publisher: Elsevier BV
Date: 09-2018
Characterization of coating probe with Ti-DLC for electrical scanning probe microscope
Publisher: Elsevier BV
Date: 06-2011
Development of high-efficient tin selenide-based thermoelectric materials
Publisher: University of Queensland Library
Outstanding thermoelectric properties of solvothermal-synthesized Sn1−3xInxAg2xTe micro-crystals through defect engineering and band tuning
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
DOI: 10.1039/C9TA11614A
Abstract: In eco-friendly SnTe thermoelectrics, In and Ag co-doping induces the synergistic effect of resonance energy levels and valence band convergence to enhance its electrical transport properties, while defects ameliorates its thermal transport.
Quasi-one-dimensional bulk thermoelectrics
Publisher: Elsevier BV
Date: 06-2023
Oligomeric Silica-Wrapped Perovskites Enable Synchronous Defect Passivation and Grain Stabilization for Efficient and Stable Perovskite Photovoltaics
Publisher: American Chemical Society (ACS)
Date: 07-05-2019
Ni doping and rational annealing boost thermoelectric performance of nanostructured double perovskite Pr1.8Sr0.2CoFeO6
Publisher: Elsevier BV
Date: 12-2022
Self-hygroscopic and smart color-changing hydrogels as coolers for improving energy conversion efficiency of electronics
Publisher: Elsevier BV
Date: 04-2023
High-performance in n-type PbTe-based thermoelectric materials achieved by synergistically dynamic doping and energy filtering
Publisher: Elsevier BV
Date: 2022
In-situ growth of high-performance (Ag, Sn) co-doped CoSb3 thermoelectric thin films
Publisher: Elsevier BV
Date: 11-2021
Rational Electronic and Structural Designs Advance BiCuSeO Thermoelectrics
Publisher: Wiley
Date: 10-04-2021
Abstract: In this work, a record high thermoelectric figure‐of‐merit ZT of 1.6 ± 0.2 at 873 K in p‐type polycrystalline Bi 0.94 Pb 0.06 CuSe 1.01 O 0.99 by a synergy of rational band manipulation and novel nanostructural design is reported. First‐principles density functional theory calculation results indicate that the density of state at the Fermi level that crosses the valence band can be significantly reduced and the measured optical bandgap can be enlarged from 0.70 to 0.74 eV by simply replacing 1% O with 1% Se, both indicating a potentially reduced carrier concentration and in turn, an improved carrier mobility and a boosted power factor up to 9.0 µW cm −1 K −2 . Meanwhile, comprehensive characterizations reveal that under Se‐rich condition, Cu 2 Se secondary microphases and significant lattice distortions triggered by Pb‐doping and Se‐substitution can be simultaneously achieved, contributing to a reduced lattice thermal conductivity of 0.4 W m −1 K −1 . Furthermore, a unique shear exfoliation technique enables an effective grain refinement with higher anisotropy of the polycrystalline pellet, leading to a further improved power factor up to 10.9 µW cm −1 K −2 and a further reduced lattice thermal conductivity of 0.30 W m −1 K −1 , which gives rise to record high ZT .
Facile synthesis and characterization of multifunctional cobalt-based nanocomposites for targeted chemo-photothermal synergistic cancer therapy
Publisher: Elsevier BV
Date: 12-2019
Achieving high thermoelectric properties in PEDOT:PSS/SWCNTs composite films by a combination of dimethyl sulfoxide doping and NaBH4 dedoping
Publisher: Elsevier BV
Date: 08-2022
Employing multi-functional SnSe inclusions to boost the thermoelectric performance of the shear-exfoliated Bi2Te2.7Se0.3
Publisher: Elsevier BV
Date: 08-2023
Enhanced thermoelectric properties of nanostructured n-type Bi2Te3 by suppressing Te vacancy through non-equilibrium fast reaction
Publisher: Elsevier BV
Date: 07-2020
Structural Evolution of High-Performance Mn-Alloyed Thermoelectric Materials: A Case Study of SnTe
Publisher: Wiley
Date: 25-05-2021
Abstract: Mn alloying in thermoelectrics is a long‐standing strategy for enhancing their figure‐of‐merit through optimizing electronic transport properties by band convergence, valley perturbation, or spin‐orbital coupling. By contrast, mechanisms by which Mn contributes to suppressing thermal transports, namely thermal conductivity, is still ambiguous. A few precedent studies indicate that Mn introduces a series of hierarchical defects from the nano‐ to meso‐scale, leading to effective phonon scattering scoping a wide frequency spectrum. Due to insufficient insights at the atomic level, the theory remains as phenomenological and cannot be used to quantitatively predict the thermal conductivity of Mn‐alloyed thermoelectrics. Herein, by choosing the SnTe as a case study, aberration‐corrected transmission electron microscopy (TEM)/scanning transmission electron microscopy (STEM) to characterize the lattice complexity of Sn 1.02− x Mn x Te is employed. Mn as a “dynamic” dopant that plays an important role in SnTe with respect to different alloying levels or post treatments is revealed. The results indicate that Mn precipitates at x = 0.08 prior to reaching solubility (≈10 mol%), and then splits into Mn Sn substitution and γ‐MnTe hetero‐phases via mechanical alloying. Understanding such unique crystallography evolution, combined with a modified Debye‐Callaway model, is critical in explaining the decreased thermal conductivity of Sn 1.02− x Mn x Te with rational phonon scattering pathways, which should be applicable for other thermoelectric systems.
Flexible Carbon-Fiber/Semimetal Bi Nanosheet Arrays as Separable and Recyclable Plasmonic Photocatalysts and Photoelectrocatalysts
Publisher: American Chemical Society (ACS)
Date: 06-05-2020
Synergistic Texturing and Bi/Sb-Te Antisite Doping Secure High Thermoelectric Performance in Bi0.5Sb1.5Te3-Based Thin Films
Publisher: Wiley
Date: 15-09-2021
Abstract: Bi 2 Te 3 ‐based thin films are attracting increasing attention due to their considerable wearability and flexibility feature. However, the relatively low performance compared to their bulk counterparts limits their development and wider application. In this work, synergistic texturing and Bi/Sb‐Te antisite doping are used to achieve a high room‐temperature ZT of ≈1.5 in p‐type Bi 0.5 Sb 1.5 Te 3 thin films by a magnetron sputtering method. Structural characterization confirms that carefully tuning the deposition temperature can strengthen the texture of as‐prepared polycrystalline Bi 0.5 Sb 1.5 Te 3 thin films, leading to significantly enhanced carrier mobility and electrical conductivity. Simultaneously, rational engineering of the deposition temperature can induce antisite doping between Bi/Sb and Te, which can reduce the carrier concentration and make it closer to the optimized level. In turn, a high power factor of 45.3 µW cm −1 K −2 and a maximized ZT of ≈1.5 at room temperature are obtained. This high power factor and ZT are highly competitive to other state‐of‐the‐art p‐type thin‐film‐based thermoelectric materials, showing great potentials for practical applications.
High-Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges
Publisher: Wiley
Date: 13-02-2020
A synergy of strain loading and laser radiation in determining the high-performing electrical transports in the single Cu-doped SnSe microbelt
Publisher: Elsevier BV
Date: 06-2020
High Porosity in Nanostructured n-Type Bi2Te3 Obtaining Ultralow Lattice Thermal Conductivity
Publisher: American Chemical Society (ACS)
Date: 09-08-2019
Abstract: Porous structure possesses full potentials to develop high-performance thermoelectric materials with low lattice thermal conductivity. In this study, the
One-step post-treatment boosts thermoelectric properties of PEDOT:PSS flexible thin films
Publisher: Elsevier BV
Date: 2023
Graphite Nanosheets as Multifunctional Nanoinclusions to Boost the Thermoelectric Performance of the Shear-Exfoliated Bi2O2Se
Publisher: Wiley
Date: 03-05-2022
Abstract: As an eco‐friendly oxide‐based thermoelectric material, Bi 2 O 2 Se exhibits considerable potential for practical device application, but its low electrical conductivity needs to be further improved to achieve higher thermoelectric performance. Here, a record‐high figure of merit, ZT of .7 at 773 K in the shear‐exfoliated nanostructured Bi 2 O 2 Se with graphite nanosheets as multifunctional secondary nanoinclusions, is achieved. The introduced graphite nanosheets regularize the arrangement of Bi 2 O 2 Se nanograins, strengthen the anisotropy, and act as the “expressway” to improve the electrical conductivity by simultaneously enhancing the electron carrier concentration and mobility of the hybrid materials, leading to a high power factor of ≈6.0 µW cm –1 K –2 at 773 K. Also, the liquid‐phase shear exfoliation refines both graphite and Bi 2 O 2 Se into nanosheets. Moreover, the as‐sintered hybrid bulk materials composed of these nanosheets possess dense grain and phase boundaries, as well as various lattice imperfections, such as lattice distortions and stacking faults formed by physical shearing, which can significantly scatter the phonons with different wavelengths and in turn contribute to a low thermal conductivity of only 0.63 W m –1 K –1 at 773 K, both contributing to a competitive ZT of ≈0.73 at this temperature, indicating the great potential for practical applications.
Two-dimensional flexible thermoelectric devices: Using modeling to deliver optimal capability
Publisher: AIP Publishing
Date: 15-10-2021
DOI: 10.1063/5.0067930
Abstract: Two-dimensional flexible thermoelectric devices (2D FTEDs) are a promising candidate for powering wearable electronics by harvesting low-grade energy from human body and other ubiquitous energy sources. However, immature device designs in the parametric geometries of FTEDs cannot provide an optimized output power density because of either insufficient temperature difference or unnecessarily large internal resistance. Here, we theoretically design optimal parametric geometries of 2D FTEDs by systematically considering applied temperature difference, temperature-dependent thermoelectric properties of materials, leg thickness, and thermodynamic conditions. The obtained analytical solution determines the optimal leg length for 2D FTEDs when these parameters are given and, therefore, minimizes the internal device resistance and simultaneously maintains the high temperature difference across the TE legs to maximize the device output power density. According to this design, we use flexible Ag2Se films as thermoelectric legs to assemble a 2D FTED, which displays a maximum power output of 11.2 mW and a normalized output power density of 1.43 μW cm−2 K−1 at a temperature difference of 150 K, outnumbering other 2D FTEDs by threefolds. Our 2D FTED can power up four light-emitting diodes, which shows great potential for harvesting electricity from low-grade heat. The exotic and reliable device design concept of 2D FTEDs reported here can be extended to other thermoelectric systems to boost the practical applications of FTEDs.
AFM and XPS studies on material removal mechanism of sapphire wafer during chemical mechanical polishing (CMP)
Publisher: Springer Science and Business Media LLC
Date: 04-09-2015
Solvothermally silver doping boosting the thermoelectric performance of polycrystalline Bi2Te3
Publisher: Elsevier BV
Date: 11-2023
A strategy-purifying wastewater with waste materials: Zn2+ modified waste red mud as recoverable adsorbents with an enhanced removal capacity of congo red
Publisher: Elsevier BV
Date: 09-2023
Characterizations of thermoelectric ceramics
Publisher: Elsevier
Date: 2023
Achieving ultralow surface roughness and high material removal rate in fused silica via a novel acid SiO2 slurry and its chemical-mechanical polishing mechanism
Publisher: Elsevier BV
Date: 2020
SrTiO3-based thermoelectrics: Progress and challenges
Publisher: Elsevier BV
Date: 12-2020
Atomically smooth gallium nitride surfaces generated by chemical mechanical polishing with non-noble metal catalyst(Fe-N<inf>x</inf>/C) in acid solution
Publisher: IEEE
Date: 11-2014
Tuning the Saturated Vapor Pressure of Solvothermal Synthesis to Boost the Thermoelectric Performance of Pristine Bi2Te3 Polycrystals by Anisotropy Strengthening
Publisher: American Chemical Society (ACS)
Date: 25-05-2023
Hierarchical Architectural Structures Induce High Performance in n‐Type GeTe‐Based Thermoelectrics
Publisher: Wiley
Date: 05-01-2023
Abstract: Compatible p‐ and n‐type materials are necessary for high‐performance GeTe thermoelectric modules, where the n‐type counterparts are in urgent need. Here, it is reported that the p‐type GeTe can be tuned into n‐type by decreasing the formation energy of Te vacancies via AgBiTe 2 alloying. AgBiTe 2 alloying induces Ag 2 Te precipitates and tunes the carrier concentration close to the optimal level, leading to a high‐power factor of 6.2 µW cm −1 K −2 at 423 K. Particularly, the observed hierarchical architectural structures, including phase boundaries, nano‐precipitates, and point defects, contribute an ultralow lattice thermal conductivity of 0.39 W m −1 K −1 at 423 K. Correspondingly, an increased ZT of 0.5 at 423 K is observed in n‐type (GeTe) 0.45 (AgBiTe 2 ) 0.55 . Furthermore, a single‐leg module demonstrates a maximum η of 6.6% at the temperature range from 300 to 500 K. This study indicates that AgBiTe 2 alloying can successfully turn GeTe into n‐type with simultaneously optimized thermoelectric performance.
Applications of Thermoelectric Generators To Improve Catalytic-Assisted Hydrogen Production Efficiency: Future Directions
Publisher: American Chemical Society (ACS)
Date: 21-07-2022
A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing
Publisher: Elsevier BV
Date: 05-2015
Ce‐filled Ni1.5Co2.5Sb12 Skutterudite Thin Films with Record‐High Figure of Merit And Device Performance
Publisher: Wiley
Date: 09-08-2023
Abstract: Realizing high thermoelectric performance in CoSb 3 skutterudite‐based thin films and their devices is historically challenging, especially due to the lack of high‐performing thin‐film‐based device working at medium‐to‐high temperatures. Here, a record‐high ZT of 1.1 is achieved at 683 K in an n‐type Ce 0.3 Ni 1.5 Co 2.5 Sb 12 thin film, fabricated from a self‐designed target via advanced pulsed laser deposition. Both experimental and computational results confirm that the Ce‐filling and metal‐featured nanoinclusions such as CeSb contribute to high electrical conductivity, while the Ni‐doping and significantly strengthen the energy filtering effect that occurs at the dense interfaces between the Ce 0.3 Ni 1.5 Co 2.5 Sb 12 matrix and the nanoinclusions which leads to a large Seebeck coefficient, giving rise to such a high ZT . In addition, a new‐type CoSb 3 thin‐film‐based device is successfully fabricated, which exhibits a high output power density of 8.25 mW cm −2 at a temperature difference of 140 K and a cold‐side temperature of 573 K, indicating the potential for application to medium‐to‐high‐temperature power generation scenarios.
High thermoelectric and mechanical performance in the n-type polycrystalline SnSe incorporated with multi-walled carbon nanotubes
Publisher: Elsevier BV
Date: 07-2022
Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives
Publisher: IEEE
Date: 11-2014
Ag doping induced abnormal lattice thermal conductivity in Cu2Se
Publisher: Royal Society of Chemistry (RSC)
Date: 2018
DOI: 10.1039/C8TC04129F
Abstract: Schematic diagram of Cu + /Ag + diffusion in the Se sublattice of Cu 2 Se, in which blocked diffusion of Ag + may subsequently block the diffusion of other Cu + and weaken the scattering of phonons.
Self-Standing Film Assembled using SnS–Sn/Multiwalled Carbon Nanotubes Encapsulated Carbon Fibers: A Potential Large-Scale Production Material for Ultra-stable Sodium-Ion Battery Anodes
Publisher: American Chemical Society (ACS)
Date: 09-06-2021
The effects of ultra-smooth surface atomic step morphology on CMP performances of sapphire and SiC wafers
Publisher: IEEE
Date: 11-2014
CMP of GaN using sulfate radicals generated by metal catalyst
Publisher: IEEE
Date: 11-2014
Ce Filling Limit and Its Influence on Thermoelectric Performance of Fe3CoSb12-Based Skutterudite Grown by a Temperature Gradient Zone Melting Method
Publisher: MDPI AG
Date: 11-11-2021
DOI: 10.3390/MA14226810
Abstract: CoSb3-based skutterudite is a promising mid-temperature thermoelectric material. However, the high lattice thermal conductivity limits its further application. Filling is one of the most effective methods to reduce the lattice thermal conductivity. In this study, we investigate the Ce filling limit and its influence on thermoelectric properties of p-type Fe3CoSb12-based skutterudites grown by a temperature gradient zone melting (TGZM) method. Crystal structure and composition characterization suggests that a maximum filling fraction of Ce reaches 0.73 in a composition of Ce0.73Fe2.73Co1.18Sb12 prepared by the TGZM method. The Ce filling reduces the carrier concentration to 1.03 × 1020 cm−3 in the Ce1.25Fe3CoSb12, leading to an increased Seebeck coefficient. Density functional theory (DFT) calculation indicates that the Ce-filling introduces an impurity level near the Fermi level. Moreover, the rattling effect of the Ce fillers strengthens the short-wavelength phonon scattering and reduces the lattice thermal conductivity to 0.91 W m−1 K−1. These effects induce a maximum Seebeck coefficient of 168 μV K−1 and a lowest κ of 1.52 W m−1 K−1 at 693 K in the Ce1.25Fe3CoSb12, leading to a peak zT value of 0.65, which is 9 times higher than that of the unfilled Fe3CoSb12.
Hierarchical meso/macro-porous TiO2/graphitic carbon nitride nanofibers with enhanced hydrogen evolution
Publisher: Elsevier BV
Date: 04-2021
High-Performance PEDOT:PSS Flexible Thermoelectric Materials and Their Devices by Triple Post-Treatments
Publisher: American Chemical Society (ACS)
Date: 28-06-2019
Dual Post-Treatments Boost Thermoelectric Performance of PEDOT:PSS Films and Their Devices
Publisher: Wiley
Date: 27-07-2022
Abstract: Owing to intrinsically high electrical conductivity and low thermoelectric conductivity, poly(3,4‐ethylenedioxithiophene):poly(styrenesulfonate) (PEDOT:PSS) shows promising thermoelectric properties. However, its relatively low power factor limits the practical applications of PEDOT:PSS. Here, unique dual post‐treatments by sodium sulfite (Na 2 SO 3 ) and formamide (CH 3 NO) to boost the thermoelectric performance of flexible PEDOT:PSS films with an optimized power factor of 74.09 µW m –1 K –2 are used. Comprehensive characterizations confirm that CH 3 NO reduces the excessive insulating PSS and thereby increases the electrical conductivity, while Na 2 SO 3 lowers the reduction of the doping level of PEDOT, leading to an increased Seebeck coefficient. Furthermore, the rationally post‐treated PEDOT:PSS films are assembled into a flexible thermoelectric device that exhibits an open‐circuit voltage of 2.8 mV using the heat from the human arm and an output power density of 2.56 µW cm –2 by a temperature difference of 25 K, indicating great potential for practical applications on sustainably charging low‐grade wearable electronics.
Atomic Investigation on the Facet-Dependent Melting of Ceramic Nanostructures via In Situ Electron Irradiation
Publisher: Wiley
Date: 12-05-2020
Advances and challenges in 2D MXenes: From structures to energy storage and conversions
Publisher: Elsevier BV
Date: 10-2021
High Carrier Mobility and High Figure of Merit in the CuBiSe2 Alloyed GeTe
Publisher: Wiley
Date: 22-10-2021
Abstract: According to the Mott's relation, the figure‐of‐merit of a thermoelectric material depends on the charge carrier concentration and carrier mobility. This explains the observation that low thermoelectric properties of GeTe‐based materials suffer from the degraded carrier mobility, on account of the fluctuation of electronegativity and ionicity of various elements. Here, high‐performance CuBiSe 2 alloyed GeTe with high carrier mobility due to the small electronegativity difference between Cu and Ge atoms and the weak ionicity of CuTe and BiTe bonds, is developed. Density functional theory calculations indicate that CuBiSe 2 alloying increases the formation energy of Ge vacancies and correspondingly reduces the amount of Ge vacancies, leading to an optimized carrier concentration and a high power factor of ≈37.4 µW cm −1 K −2 at 723 K. Moreover, CuBiSe 2 alloying induces dense point defects and triggers ubiquitous lattice distortions, leading to a reduced lattice thermal conductivity of 0.39 W m −1 K −1 at 723 K. These synergistic effects result in an optimization of the carrier mobility, the carrier concentration, and the lattice thermal conductivity, which favors an enhanced peak figure‐of‐merit of ≈2.2 at 723 K in (GeTe) 0.94 (CuBiSe 2 ) 0.06 . This study provides guidance for the screening of GeTe‐based thermoelectric materials with high carrier mobility.
Advances in Versatile GeTe Thermoelectrics from Materials to Devices
Publisher: Wiley
Date: 28-11-2022
Abstract: Driven by the intensive efforts in the development of high‐performance GeTe thermoelectrics for mass‐market application in power generation and refrigeration, GeTe‐based materials display a high figure of merit of .0 and an energy conversion efficiency beyond 10%. However, a comprehensive review on GeTe, from fundamentals to devices, is still needed. In this regard, the latest progress on the state‐of‐the‐art GeTe is timely reviewed. The phase transition, intrinsic high carrier concentration, and multiple band edges of GeTe are fundamentally analyzed from the perspectives of the native atomic orbital, chemical bonding, and lattice defects. Then, the fabrication methods are summarized with a focus on large‐scale production. Afterward, the strategies for enhancing electronic transports of GeTe by energy filtering effect, resonance doping, band convergence, and Rashba band splitting, and the methods for strengthening phonon scatterings via nanoprecipitates, planar vacancies, and superlattices, are comprehensively reviewed. Besides, the device assembly and performance are highlighted. In the end, future research directions are concluded and proposed, which enlighten the development of broader thermoelectric materials.
Advances in printing techniques for thermoelectric materials and devices
Publisher: OAE Publishing Inc.
Date: 02-08-2023
DOI: 10.20517/SS.2023.20
Abstract: Thermoelectric materials and devices have garnered significant attention in recent years due to their potential for converting waste heat into usable electricity, opening new avenues for sustainable energy harvesting. As research in the field of thermoelectric materials and devices continues to grow, so does the need for efficient and scalable fabrication methods. Among various fabrication techniques, printing methods have emerged as promising approaches to producing thermoelectric materials and devices, offering advantages such as low cost, high throughput, and design flexibility. Here, we overview the recent advances in printing methods for the fabrication of thermoelectric materials and devices. We discuss the key principles, challenges, and opportunities associated with various printing techniques, including screen printing, inkjet printing, and 3D printing, with a focus on their applications in thermoelectric materials and devices. Furthermore, we highlight the progress made in optimizing the printing parameters, ink formulations, and post-processing methods to enhance the thermoelectric performance of printed materials and devices. Finally, we provide insights into the prospects and potential research directions in the field of printing methods for thermoelectric materials and devices. This review aims to provide a comprehensive overview of the state-of-the-art printing techniques for thermoelectric materials and devices and to serve as a reference for researchers and practitioners working in this rapidly growing field.
Kinetic condition driven phase and vacancy enhancing thermoelectric performance of low-cost and eco-friendly Cu2−xS
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9TC00819E
Abstract: Cu 2−x S pellets sintered from powders synthesized with different NaOH amounts have different phase compositions and average Cu vacancy levels. This has subsequently led to enhanced thermoelectric performance due to both enhanced hole concentration and reduced phase transition temperature.
Solvothermal synthesis of high-purity porous Cu1.7Se approaching low lattice thermal conductivity
Publisher: Elsevier BV
Date: 11-2019
Biomass-Derived Carbon for High-Performance Batteries: From Structure to Properties
Publisher: Wiley
Date: 08-04-2022
Abstract: Owing to the sustainability, environmental friendliness, and structural ersity of biomass‐derived materials, extensive efforts have been devoted to use them as energy storage materials in high‐energy rechargeable batteries. A timely and comprehensive review from the structures to mechanisms will significantly widen this research field. Here, it starts with the operation mechanism of batteries, and it aims to summarize the latest advances for biomass‐derived carbon to achieve high‐energy battery materials, including activation carbon methods and the structural classification of biomass‐derived carbon materials from zero dimension, one dimension, two dimension, and three dimension. Each strategy starts with carefully selected ex les and then moves to illustrate the underlying transport mechanism of electrons in the structure. In the end, challenges, strategies, and outlooks are pointed out for the future development of biomass‐derived carbon materials. Overall, this review will help researchers choose appropriate strategies to design biomass‐derived carbon materials, thereby promoting the application of biomass materials in battery design.
Boosting the thermoelectric performance of p-type heavily Cu-doped polycrystalline SnSe via inducing intensive crystal imperfections and defect phonon scattering
Publisher: Royal Society of Chemistry (RSC)
Date: 2018
DOI: 10.1039/C8SC02397B
Abstract: In this study, we, for the first time, report a high Cu solubility of 11.8% in single crystal SnSe microbelts synthesized via a facile solvothermal route.
Advances in Ag2S-based thermoelectrics for wearable electronics: Progress and perspective
Publisher: Elsevier BV
Date: 11-2023
XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP)
Publisher: Elsevier BV
Date: 10-2014
Atomic step morphology research of LED sapphire substrate polishing surface and its periodicity
Publisher: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
Date: 2017
Anisotropy Control-Induced Unique Anisotropic Thermoelectric Performance in the n-Type Bi2Te2.7Se0.3 Thin Films
Publisher: Wiley
Date: 11-09-2019
Advances in conducting polymer-based thermoelectric materials and devices
Publisher: OAE Publishing Inc.
Date: 2021
Assembly-Free Fabrication of High-Performance Flexible Inorganic Thin-Film Thermoelectric Device Prepared by a Thermal Diffusion
Publisher: Wiley
Date: 14-09-2022
Abstract: High relative contact electrical resistance and poor flexibility in inorganic thin‐film thermoelectric devices significantly limit their practical applications. To overcome this challenge, a one‐step thermal diffusion method to fabricate assembly‐free inorganic thin‐film thermoelectric devices is developed, where the in situ grown electrode delivers an excellent leg‐electrode contact, leading to high output power and flexibility in the prepared p‐type Sb 2 Te 3 /n‐type Bi 2 Te 3 thin‐film device, which is composed of 8 pairs of p‐n junctions. Such a device shows a very low relative contact electrical resistance of 7.5% and a high power density of 1.42 mW cm –2 under a temperature difference of 60 K. Less than 10% change of the whole electrical resistance before and after bending test indicates the robust bending resistance and stability of the device. This study indicates that the novel assembly‐free one‐step thermal diffusion method can effectively enhance the leg‐electrode contact, the device thermoelectric performance, bending resistance, and stability, which can inspire the development of thin‐film thermoelectric devices.
Achieving high Figure of Merit in p-type polycrystalline Sn0.98Se via self-doping and anisotropy-strengthening
Publisher: Elsevier BV
Date: 2018
Achieving ultrahigh power factor in n-type Ag2Se thin films by carrier engineering
Publisher: Elsevier BV
Date: 03-2022
Enhanced thermoelectric performance of n-type Nb-doped PbTe by compensating resonant level and inducing atomic disorder
Publisher: Elsevier BV
Date: 05-2022
Composite diamond-DLC coated nanoprobe tips for wear resistance and adhesion reduction
Publisher: Elsevier BV
Date: 05-2012
Investigation on the surface characterization of Ga-faced GaN after chemical-mechanical polishing
Publisher: Elsevier BV
Date: 05-2015
Synergistic Effect of Band and Nanostructure Engineering on the Boosted Thermoelectric Performance of n‐Type Mg3+δ(Sb, Bi)2 Zintls
Publisher: Wiley
Date: 31-05-2022
Abstract: Thermoelectric Mg 3+ δ (Sb, Bi) 2 Zintls have attracted significant attention because of their high‐performing, eco‐friendly, and cost‐effective features, but their thermoelectric properties still need improvement for application to practical devices. Here an outstanding ZT of ≈1.87 at 773 K and a high average ZT of ≈1.2 in n‐type Y‐doped Mg 3.2 Sb 1.5 Bi 0.49 Se 0.01 are reported, both of which rank as top values among the reported literature. First‐principles calculations indicate that substituting the Mg site with Y shifts the Fermi level into the conduction band and simultaneously narrows the bandgap, both strengthening the n‐type semiconducting feature and boosting the electron carrier density of Mg 3.2 Sb 1.5 Bi 0.49 Se 0.01 . A high power factor of ≈21.4 µW cm –1 K –2 is achieved at 773 K in Mg 3.18 Y 0.02 Sb 1.5 Bi 0.49 Se 0.01 , benefiting from the rationally tuned carrier density of ≈7.7 × 10 19 cm –3 at this temperature. In addition, the doped Ys act as point defects to cause significant lattice distortions and strains, confirmed by comprehensive micro/nanostructure characterizations. These lattice imperfections suppress the lattice thermal conductivity to ≈0.41 W m –1 K –1 at 773 K, leading to such a high ZT . Furthermore, a high energy conversion efficiency of ≈13.8% is predicted by a temperature gradient of 450 K, indicating a great potential to be applied to practical devices for mid‐temperature applications.
High near-room temperature figure of merit of n-type Bi2GeTe4-based thermoelectric materials via a stepwise optimization of carrier concentration
Publisher: Elsevier BV
Date: 04-2022
Harvesting waste heat with flexible Bi2Te3 thermoelectric thin film
Publisher: Springer Science and Business Media LLC
Date: 17-11-2022
An in situ study of chemical-mechanical polishing behaviours on sapphire (0001) via simulating the chemical product-removal process by AFM-tapping mode in both liquid and air environment
Publisher: Royal Society of Chemistry (RSC)
Date: 2018
DOI: 10.1039/C8NR04645J
Abstract: We present an in situ study of chemical-mechanical polishing behaviours on sapphire (0001) via simulating the chemical product-removal process by AFM-tapping mode.
Flexible Thermoelectric Materials and Generators: Challenges and Innovations
Publisher: Wiley
Date: 30-05-2019
Abstract: The urgent need for ecofriendly, stable, long-lifetime power sources is driving the booming market for miniaturized and integrated electronics, including wearable and medical implantable devices. Flexible thermoelectric materials and devices are receiving increasing attention, due to their capability to convert heat into electricity directly by conformably attaching them onto heat sources. Polymer-based flexible thermoelectric materials are particularly fascinating because of their intrinsic flexibility, affordability, and low toxicity. There are other promising alternatives including inorganic-based flexible thermoelectrics that have high energy-conversion efficiency, large power output, and stability at relatively high temperature. Herein, the state-of-the-art in the development of flexible thermoelectric materials and devices is summarized, including exploring the fundamentals behind the performance of flexible thermoelectric materials and devices by relating materials chemistry and physics to properties. By taking insights from carrier and phonon transport, the limitations of high-performance flexible thermoelectric materials and the underlying mechanisms associated with each optimization strategy are highlighted. Finally, the remaining challenges in flexible thermoelectric materials are discussed in conclusion, and suggestions and a framework to guide future development are provided, which may pave the way for a bright future for flexible thermoelectric devices in the energy market.
Investigation of the Chemical Residuals on the Fused Silica during Chemical Mechanical Polishing
Publisher: Wiley
Date: 16-08-2018
A Solvothermal Synthetic Environmental Design for High-Performance SnSe-Based Thermoelectric Materials
Publisher: Wiley
Date: 11-04-2022
Abstract: SnSe is challenging to use in thermoelectric devices due to difficulties in simultaneously optimizing its thermoelectric and mechanical properties. Here, the authors show a unique solvothermal synthetic environmental design to fabricate super‐large and micro/nanoporous Sn 0.965 Se microplates by using CrCl 3 . Cl − ions to trigger Sn‐vacancy formation and optimize the hole concentration to ≈3 × 10 19 cm −3 , while the as‐formed Cr(OH) 3 colloidal precipitations act as “templates” to achieve micro/nanoporous features, leading to low lattice thermal conductivity of ≈0.2 W m −1 K −1 in the as‐sintered polycrystal, contributing to a high ZT of ≈2.4 at 823 K and an average ZT of ≈1.1. Of particular note, the polycrystal exhibits high hardness (≈2.26 GPa) and compression strength (≈109 MPa), strengthened by grain refinement and vacancy‐induced lattice distortions and dislocations while a single‐leg device provides a stable output power ( mW) and conversion efficiency of ≈10% by a temperature difference of 425 K, indicating great potential for applying to practical thermoelectric devices.
Double perovskite Pr2CoFeO6 thermoelectric oxide: Roles of Sr-doping and Micro/nanostructuring
Publisher: Elsevier BV
Date: 12-2021
Novel Thermal Diffusion Temperature Engineering Leading to High Thermoelectric Performance in Bi2Te3-Based Flexible Thin-Films
Publisher: Wiley
Date: 22-12-2022
Abstract: Flexible Bi 2 Te 3 ‐based thermoelectric devices can function as power generators for powering wearable electronics or chip‐sensors for internet‐of‐things. However, the unsatisfied performance of n‐type Bi 2 Te 3 flexible thin films significantly limits their wide application. In this study, a novel thermal diffusion method is employed to fabricate n‐type Te‐embedded Bi 2 Te 3 flexible thin films on flexible polyimide substrates, where Te embeddings can be achieved by tuning the thermal diffusion temperature and correspondingly result in an energy filtering effect at the Bi 2 Te 3 /Te interfaces. The energy filtering effect can lead to a high Seebeck coefficient ≈160 µV K −1 as well as high carrier mobility of ≈200 cm 2 V −1 s −1 at room‐temperature. Consequently, an ultrahigh room‐temperature power factor of 14.65 µW cm −1 K −2 can be observed in the Te‐embedded Bi 2 Te 3 flexible thin films prepared at the diffusion temperature of 623 K. A thermoelectric sensor is also assembled through integrating the n‐type Bi 2 Te 3 flexible thin films with p‐type Sb 2 Te 3 counterparts, which can fast reflect finger‐touch status and demonstrate the applicability of as‐prepared Te‐embedded Bi 2 Te 3 flexible thin films. This study indicates that the thermal diffusion method is an effective way to fabricate high‐performance and applicable flexible Te‐embedded Bi 2 Te 3 ‐based thin films.
Thermoelectric Coolers: Progress, Challenges, and Opportunities
Publisher: Wiley
Date: 05-01-2022
Abstract: Owing to the free of noise, mechanical component, working fluid, and chemical reaction, thermoelectric cooling is regarded as a suitable solution to address the greenhouse emission for the broad cooling scenarios. Here, the significant progress of state‐of‐the‐art thermoelectric coolers is comprehensively summarized and the related aspects of materials, fundamental design, heat sinks, and structures, are overviewed. Particularly, the usage of thermoelectric coolers in smart city, greenhouse, and personal and chip thermal management is highlighted. In the end, current challenges and future opportunities for further improvement of designs, performance, and applications of thermoelectric coolers are pointed out.
Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0001)
Publisher: Elsevier BV
Date: 07-2014
Polycrystalline SnSe with Extraordinary Thermoelectric Property via Nanoporous Design
Publisher: American Chemical Society (ACS)
Date: 15-10-2018
Abstract: Nanoporous materials possess low thermal conductivities derived from effective phonon scatterings at grain boundaries and interfaces. Thus nanoporous thermoelectric materials have full potential to improve their thermoelectric performance. Here we report a high ZT of 1.7 ± 0.2 at 823 K in p-type nanoporous polycrystalline SnSe fabricated via a facile solvothermal route. We successfully induce indium selenides (InSe
Se-alloying reducing lattice thermal conductivity of Ge0.95Bi0.05Te
Publisher: Elsevier BV
Date: 04-2022
No title found
Publisher: American Chemical Society (ACS)
Date: 10-10-2019
DOI: 10.1021/ACS.JPCLETT.9B02818
Abstract: We report a comprehensive
Correlation between the photocatalysis and growth mechanism of SnO2 nanocrystals
Publisher: IOP Publishing
Date: 10-02-2020
Optimization of sodium hydroxide for securing high thermoelectric performance in polycrystalline Sn1-xSe via anisotropy and vacancy synergy
Publisher: Wiley
Date: 10-12-2020
DOI: 10.1002/INF2.12057
Advances in Ag2Se-based thermoelectrics from materials to applications
Publisher: Royal Society of Chemistry (RSC)
Date: 2023
DOI: 10.1039/D3EE00378G
Abstract: Thermoelectric materials and their devices can realize the solid-state energy conversion between thermal and electrical energy, therefore serving as a promising alternative to conventional fossil fuels for energy supply.
Point defect engineering and machinability in n-type Mg3Sb2-based materials
Publisher: Elsevier BV
Date: 12-2020
Flexible, recoverable, and efficient photocatalysts: MoS2/TiO2 heterojunctions grown on amorphous carbon-coated carbon textiles
Publisher: Elsevier BV
Date: 12-2023
Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag2S0.5Se0.5 Via Dual‐Phase Engineering
Publisher: Wiley
Date: 03-10-2023
Full-spectrum responsive photocatalytic activity via non-noble metal Bi decorated mulberry-like BiVO4
Publisher: Elsevier BV
Date: 08-2021
Correction: Two-dimensional nanocoating-enabled orthopedic implants for bimodal therapeutic applications
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
DOI: 10.1039/D0NR90183K
Abstract: Correction for ‘Two-dimensional nanocoating-enabled orthopedic implants for bimodal therapeutic applications’ by Song Wang et al. , Nanoscale , 2020, 12 , 11936–11946, DOI: 10.1039/D0NR02327B.
Two-dimensional WSe2/SnSe p-n junctions secure ultrahigh thermoelectric performance in n-type Pb/I Co-doped polycrystalline SnSe
Publisher: Elsevier BV
Date: 2021
Polycrystalline NiSe-Alloyed SnSe with Improved Medium-Temperature Thermoelectric Performance
Publisher: American Chemical Society (ACS)
Date: 04-05-2022
Bi2O3/BiVO4@graphene oxide van der Waals heterostructures with enhanced photocatalytic activity toward oxygen generation
Publisher: Elsevier BV
Date: 07-2021
Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry
Publisher: Elsevier BV
Date: 07-2014
Synergistic effect approaching record-high figure of merit in the shear exfoliated n-type Bi2O2-2xTe2xSe
Publisher: Elsevier BV
Date: 03-2020
Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms
Publisher: Elsevier BV
Date: 2017
Conducting polymer-based flexible thermoelectric materials and devices: From mechanisms to applications
Publisher: Elsevier BV
Date: 08-2021
Simultaneously achieving high ZT and mechanical hardness in highly alloyed GeTe with symmetric nanodomains
Publisher: Elsevier BV
Date: 08-2022
Directional Thermal Diffusion Realizing Inorganic Sb2Te3/Te Hybrid Thin Films with High Thermoelectric Performance and Flexibility
Publisher: Wiley
Date: 31-08-2022
Abstract: Inorganic films possess much higher thermoelectric performance than their organic counterparts, but their poor flexibilities limit their practical applications. Here, Sb 2 Te 3 /Te x hybrid thin films with high thermoelectric performance and flexibility, fabricated via a novel directional thermal diffusion reaction growth method are reported. The directional thermal diffusion enables rationally tuning the Te content in Sb 2 Te 3 , which optimizes the carrier density and leads to a significantly enhanced power factor of 20 µW cm –1 K –2 , confirmed by both first‐principles calculations and experiments while dense boundaries between Te and Sb 2 Te 3 nanophases, contribute to the low thermal conductivity of ≈0.86 W m –1 K –1 , both induce a high ZT of ≈1 in (Sb 2 Te 3 )(Te) 1.5 at 453 K, ranking as the top value among the reported flexible films. Besides, thin films also exhibit extraordinary flexibility. A rationally designed flexible device composed of (Sb 2 Te 3 )(Te) 1.5 thin films as p ‐type legs and Bi 2 Te 3 thin films as n ‐type legs shows a high power density of 280 µW cm –2 at a temperature difference of 20 K, indicating a great potential for sustainably charging low‐power electronics.
Super Large Sn1–xSe Single Crystals with Excellent Thermoelectric Performance
Publisher: American Chemical Society (ACS)
Date: 05-02-2019
Abstract: SnSe single crystals have drawn extensive attention for their ultralow thermal conductivity and outstanding thermoelectric performance. Here, we report super large Sn
Bacteria-Triggered pH-Responsive Osteopotentiating Coating on 3D-Printed Polyetheretherketone Scaffolds for Infective Bone Defect Repair
Publisher: American Chemical Society (ACS)
Date: 05-06-2020
Tuning wall thickness of TiO2 microtubes for an enhanced photocatalytic activity with thickness-dependent charge separation efficiency
Publisher: Elsevier BV
Date: 11-2020
In situ crystal-amorphous compositing inducing ultrahigh thermoelectric performance of p-type Bi0.5Sb1.5Te3 hybrid thin films
Publisher: Elsevier BV
Date: 12-2020
Grain boundary re-crystallization and sub-nano regions leading to high plateau figure of merit for Bi2Te3 nanoflakes
Publisher: Royal Society of Chemistry (RSC)
Date: 2023
DOI: 10.1039/D3EE02370B
Flexible hollow TiO2 @CMS/carbon-fiber van der Waals heterostructures for simulated-solar light photocatalysis and photoelectrocatalysis
Publisher: Elsevier BV
Date: 2022
Environmentally-friendly harvesting TiO2 nanospheres and V2O5 microrods from spent selective catalytic reduction catalysts
Publisher: Elsevier BV
Date: 12-2021
Enhancing Thermoelectric Properties of InTe Nanoprecipitate-Embedded Sn1–xInxTe Microcrystals through Anharmonicity and Strain Engineering
Publisher: American Chemical Society (ACS)
Date: 28-03-2019
Science in brief: Highlights from the applied physiology, muscle and genetics abstracts at the International Conference on Equine Exercise Physiology.
Publisher: Wiley
Date: 10-12-2016
DOI: 10.1111/EVJ.12484
Rational structural design and manipulation advance SnSe thermoelectrics
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
DOI: 10.1039/D0MH00954G
Abstract: This review aims to comprehensively summarize the significant developments in nanostructural manipulations that benefit SnSe thermoelectrics.
Advances in Flexible Thermoelectric Materials and Devices Fabricated by Magnetron Sputtering
Publisher: Wiley
Date: 18-07-2023
Abstract: Due to the direct conversion between thermal and electrical energy, thermoelectric materials and their devices exhibit great potential for power generation and refrigeration. With the rapid development of personal wearable electronics, the design of flexible inorganic thermoelectric materials and devices receives increasing attention. As one of the most mature thin‐film fabrication techniques, magnetron sputtering plays a key role in the fabrication of inorganic thermoelectric thin films and devices, but its progress is still not timely and comprehensively reviewed. Herein, recent advances in magnetron sputtering‐fabricated thermoelectric materials and devices are studied, including their thermoelectric properties, mechanical properties, and device design routes. The differences in the properties of thermoelectric materials under different sputtering conditions, as well as their underlying mechanisms, are carefully discussed. In the end, it is pointed out the challenges and future directions for magnetron sputtering‐prepared inorganic thermoelectric thin‐film materials and devices for practical applications. This review can serve as a useful reference to guide the design of inorganic thermoelectric materials and devices prepared by magnetron‐sputtering‐based deposition techniques.
Self-standing and high-performance B4C/Sn/acetylene black@reduced graphene oxide films as sodium-ion half/full battery anodes
Publisher: Elsevier BV
Date: 09-2021
Fiber-based thermoelectrics for solid, portable, and wearable electronics
Publisher: Royal Society of Chemistry (RSC)
Date: 2021
DOI: 10.1039/D0EE03520C
Abstract: This review comprehensively summarizes the recent progress of fiber-based thermoelectric materials and devices for solid, portable, and wearable electronics.
Morphology and Texture Engineering Enhancing Thermoelectric Performance of Solvothermal Synthesized Ultralarge SnS Microcrystal
Publisher: American Chemical Society (ACS)
Date: 13-02-2020
Chiral Skeletons of Mesoporous Silica Nanospheres to Mitigate Alzheimer’s β-Amyloid Aggregation
Publisher: American Chemical Society (ACS)
Date: 04-2023
DOI: 10.1021/JACS.2C12214
High-performance SnSe thermoelectric materials: Progress and future challenge
Publisher: Elsevier BV
Date: 08-2018
An ultra‐stable sodium half/full battery based on a unique micro‐channel pine‐derived carbon/SnS2@reduced graphene oxide film
Publisher: Wiley
Date: 06-01-2023
Abstract: Developing super stability, high coulomb efficiency, and long‐span life of sodium‐ion batteries (SIBs) can significantly widen their practical industrial applications. In this study, we report a pine‐derived carbon/SnS 2 @reduced graphene oxide (PDC/SnS 2 @rGO) film with fast ion/electron transport micro‐channel used as a SIB anode, which shows ultrahigh stable stability and long‐span life. Functionally, a biomass PDC/SnS 2 @rGO film with ~30 μm micro carbon channel and ~1.2 μm thick carbon wall can simultaneously provide the fast electron transport path and the Na + transport channel. Also, the two‐dimensional (2D) layered SnS 2 particles attached to the carbon wall of PDC can increase more Na + contact sites and shorten the Na + transport path in the NaPF 6 electrolyte. To avoid the separation of SnS 2 from PDC during the sodiation process, rGO with excellent conductivity and flexibility is wrapped in the SnS 2 outer layer as an “electronic garment”. A ~650 mA h g −1 high Na + storage capacity at 0.1 A g −1 and ~99.8% ultrahigh coulomb efficiency after 800 cycles at 5 A g −1 are obtained when PDC/SnS 2 @rGO film is used as a SIB anode. Furthermore, a SIB full‐cell is assembled using PDC/SnS 2 @rGO film (anode) and Na 3 V 2 (PO 4 ) 3 (cathode), which exhibits a ~163.9 mA h g −1 high reversible capacity and ~99.7% coulomb efficiency performance. Our work provides a reasonable design strategy for the application of biomass‐derived carbon in SIBs, which may inspire more biomass‐derived material studies.
N-doped silk wadding-derived carbon/SnOx@reduced graphene oxide film as an ultra-stable anode for sodium-ion half/full battery
Publisher: Elsevier BV
Date: 04-2022
Advances in the design and assembly of flexible thermoelectric device
Publisher: Elsevier BV
Date: 2023
Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface
Publisher: Springer Science and Business Media LLC
Date: 09-10-2013
Fe-Nx/C assisted chemical–mechanical polishing for improving the removal rate of sapphire
Publisher: Elsevier BV
Date: 07-2015
Oligomeric Silica-Wrapped Perovskites Enable Synchronous Defect Passivation and Grain Stabilization for Efficient and Stable Perovskite Photovoltaics
Publisher: Elsevier BV
Date: 2019
DOI: 10.2139/SSRN.3346989
Vapour-solid growth of MoxW1-xTe2 nanobelts by a facile chemical vapour deposition method
Publisher: Elsevier BV
Date: 03-2019
Flexible thermoelectric materials and devices: From materials to applications
Publisher: Elsevier BV
Date: 06-2021
Computation-guided design of high-performance flexible thermoelectric modules for sunlight-to-electricity conversion
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
DOI: 10.1039/D0EE01895C
Abstract: A computation-guided design of a flexible thermoelectric module achieves a high output power density of 3 μW cm −2 by sunlight-to-electricity conversion.
Ultrafast and Cost-Effective Fabrication of High-Performance Carbon-Based Flexible Thermoelectric Hybrid Films and Their Devices
Publisher: American Chemical Society (ACS)
Date: 17-05-2023
Synergetic Regulation of Oriented Crystallization and Interfacial Passivation Enables 19.1% Efficient Wide‐Bandgap Perovskite Solar Cells
Publisher: Wiley
Date: 19-07-2022
Abstract: Wide‐bandgap (WBG) perovskite solar cells (PSCs) suffer from severe voltage loss, which significantly limits the enhancement of photovoltaic performance. Here, 4‐fluoro‐phenylethylammonium iodide (FPEAI) is used as a dual‐functional agent for oriented crystallization and comprehensive passivation of WBG PSCs. The additive of FPEAI promotes crystals to grow along with the (100) orientation with improved crystallinity and to spontaneously form Ruddlesden–Popper 2D perovskite on the grain boundary and surface of 3D crystals, which can passivate defects and protect the perovskite film from moisture erosion as well as suppressed ion migration. In addition, the 2D/3D heterostructure induces a matched energy‐level alignment, which mitigates the detrimental interfacial charge recombination at the interface of the 3D perovskite and hole transport layer. Consequently, the modified WBG PSCs exhibit an improved open‐circuit voltage to 1.3 V and a fill factor of 77.8%, leading to a remarkable power conversion efficiency of 19.1% with negligible hysteresis. Furthermore, the WBG PSCs maintain 85% of the original efficiency after 1000 h in air, demonstrating outstanding humidity stability. This work indicates that FPEAI can be used as a dual‐functional agent to significantly enhance the efficiency of WBG PSCs.
Bi0.5Sb1.5Te3/PEDOT:PSS-based flexible thermoelectric film and device
Publisher: Elsevier BV
Date: 10-2020
Interstitial Cu: An Effective Strategy for High Carrier Mobility and High Thermoelectric Performance in GeTe
Publisher: Wiley
Date: 10-03-2023
Abstract: Dense point defects can strengthen phonon scattering to reduce the lattice thermal conductivity and induce outstanding thermoelectric performance in GeTe‐based materials. However, extra point defects inevitably enlarge carrier scattering and deteriorate carrier mobility. Herein, it is found that the interstitial Cu in GeTe can result in synergistic effects, which include: 1) strengthened phonon scattering, leading to ultralow lattice thermal conductivity of 0.48 W m −1 K −1 at 623 K 2) weakened carrier scattering, contributing to high carrier mobility of 80 cm 2 V −1 s −1 at 300 K 3) optimized carrier concentration of 1.22 × 10 20 cm −3 . Correspondingly, a high figure‐of‐merit of ≈2.3 at 623 K can be obtained in the Ge 0.93 Ti 0.01 Bi 0.06 Te‐0.01Cu, which corresponds to a maximum energy conversion efficiency of ≈10% at a temperature difference of 423 K. This study systematically investigates the doping behavior of the interstitial Cu in GeTe‐based thermoelectric materials for the first time and demonstrates that the localized interstitial Cu is a new strategy to enhance the thermoelectric performance of GeTe‐based thermoelectric materials.
Advanced Thermoelectric Design: From Materials and Structures to Devices
Publisher: American Chemical Society (ACS)
Date: 02-07-2020
Boosting the thermoelectric performance of n-type Bi2S3 by hierarchical structure manipulation and carrier density optimization
Publisher: Elsevier BV
Date: 09-2021
Thermoelectrics for medical applications: Progress, challenges, and perspectives
Publisher: Elsevier BV
Date: 06-2022
Achieving High-Performance Ge0.92Bi0.08Te Thermoelectrics via LaB6-Alloying-Induced Band Engineering and Multi-Scale Structure Manipulation
Publisher: Wiley
Date: 02-12-2021
Abstract: In this work, a LaB 6 ‐alloying strategy is reported to effectively boost the figure‐of‐merit (ZT) of Ge 0.92 Bi 0.08 Te‐based alloys up to ≈2.2 at 723 K, attributed to a synergy of La‐dopant induced band structuring and structural manipulation. Density‐function‐theory calculations reveal that La dopant enlarges the bandgap and converges the energy offset between the sub‐valence bands in cubic‐structured GeTe, leading to a significantly increased effective mass, which gives rise to a high Seebeck coefficient of ≈263 µV K −1 and in turn a superior power factor of ≈43 µW cm −1 K −2 at 723 K. Besides, comprehensive electron microscopy characterizations reveal that the multi‐scale phonon scattering centers, including a high density of planar defects, Boron nanoparticles in tandem with enhanced boundaries, dispersive Ge nanoprecipitates in the matrix, and massive point defects, contribute to a low lattice thermal conductivity of ≈0.67 W m −1 K −1 at 723 K. Furthermore, a high microhardness of ≈194 H v is witnessed in the as‐designed Ge 0.92 Bi 0.08 Te(LaB 6 ) 0.04 alloy, derived from the multi‐defect‐induced strengthening. This work provides a strategy for developing high‐performance and mechanical robust middle‐temperature thermoelectric materials for practical thermoelectric applications.
Performance optimization of a dual-thermoelectric-liquid hybrid system for central processing unit cooling
Publisher: Elsevier BV
Date: 08-2023
Realizing High Thermoelectric Performance in n-Type Highly Distorted Sb-Doped SnSe Microplates via Tuning High Electron Concentration and Inducing Intensive Crystal Defects
Publisher: Wiley
Date: 04-05-2021
Approaching high thermoelectric performance in p-type Cu3SbS4-based materials by rational electronic and nano/microstructural engineering
Publisher: Elsevier BV
Date: 08-2023
Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films
Publisher: Elsevier BV
Date: 03-2021
Advances in Ionic Thermoelectrics: From Materials to Devices
Publisher: Wiley
Date: 20-01-2023
Abstract: As an extended member of the thermoelectric family, ionic thermoelectrics (i‐TEs) exhibit exceptional Seebeck coefficients and applicable power factors, and as a result have triggered intensive interest as a promising energy conversion technique to harvest and exploit low‐grade waste heat ( °C). The last decade has witnessed great progress in i‐TE materials and devices however, there are ongoing disputes about the inherent fundamentals and working mechanisms of i‐TEs, and a comprehensive overview of this field is required urgently. In this review, the prominent i‐TE effects, which set the ground for i‐TE materials, or more precisely, thermo‐electrochemical systems, are first elaborated. Then, TE performance, capacitance capability, and mechanical properties of such system‐based i‐TE materials, followed by a critical discussion on how to manipulate these factors toward a higher figure‐of‐merit, are examined. After that, the prevalent molding methods for assembling i‐TE materials into applicable devices are summarized. To conclude, several evaluation criteria for i‐TE devices are proposed to quantitatively illustrate the promise of practical applications. It is therefore clarified that, if the recent trend of developing i‐TEs can continue, the waste heat recycling landscape will be significantly altered.
Wearable fiber-based thermoelectrics from materials to applications
Publisher: Elsevier BV
Date: 03-2021
Realizing high thermoelectric properties of SnTe via synergistic band engineering and structure engineering
Publisher: Elsevier BV
Date: 11-2019
Effectively restricting MnSi precipitates for simultaneously enhancing the Seebeck coefficient and electrical conductivity in higher manganese silicide
Publisher: Royal Society of Chemistry (RSC)
Date: 2019
DOI: 10.1039/C9TC01937E
Abstract: Introducing Mg 2 Si into higher manganese silicide synthesis successfully suspended the precipitation of MnSi, leading to reduced effective mass, reduced optimized carrier concentration, and enhanced figure of merit, zT .
Condensed point defects enhance thermoelectric performance of rare-earth Lu-doped GeTe
Publisher: Elsevier BV
Date: 07-2023
Graphene Oxide and Adiponectin-Functionalized Sulfonated Poly(etheretherketone) with Effective Osteogenicity and Remotely Repeatable Photodisinfection
Publisher: American Chemical Society (ACS)
Date: 10-02-2020
Sustainable utilization of municipal solid waste incineration fly ash for ceramic bricks with eco-friendly biosafety
Publisher: Elsevier BV
Date: 12-2018
A non-noble material cathode catalyst dual-doped with sulfur and nitrogen as efficient electrocatalysts for oxygen reduction reaction
Publisher: Elsevier BV
Date: 09-2015
Advances in bismuth-telluride-based thermoelectric devices: Progress and challenges
Publisher: Elsevier BV
Date: 06-2023
Self-assembled 3D flower-like hierarchical Ti-doped Cu3SbSe4 microspheres with ultralow thermal conductivity and high zT
Publisher: Elsevier BV
Date: 07-2018
SWCNTs/Ag2Se film with superior bending resistance and enhanced thermoelectric performance via in situ compositing
Publisher: Elsevier BV
Date: 02-2023
Two-dimensional nanocoating-enabled orthopedic implants for bimodal therapeutic applications
Publisher: Royal Society of Chemistry (RSC)
Date: 2020
DOI: 10.1039/D0NR02327B
Abstract: A multifunctional two-dimensional nanocoating consists of graphene oxide nanosheets, polydopamine nanofilm, and oligopeptide constructed on porous sulfonated polyetheretherketone for the purpose of bone infection treatment.
Minimization of the electrical contact resistance in thin-film thermoelectric device
Publisher: AIP Publishing
Date: 10-04-2023
DOI: 10.1063/5.0141075
Abstract: High electrical contact resistance refrains the performance of thin-film thermoelectric devices at the demonstrative level. Here, an additional Ti contact layer is developed to minimize the electrical contact resistance to ∼4.8 Ω in an as-assembled thin-film device with 50 pairs of p–n junctions. A detailed interface characterization demonstrates that the low electrical contact resistance should be mainly attributed to the partial epitaxial growth of Bi2Te3-based thin-film materials. Correspondingly, the superlow electrical contact resistance facilitates the applicability of the out-of-plane thin-film device and results in an ultrahigh surface output power density of ∼81 μW cm−2 at a low temperature difference of 5 K. This study illustrates the Ti contact layer that strengthens the contact between Cu electrodes and Bi2Te3-based thermoelectric thin films mainly through partial epitaxial growth and contributes to high-performance thin-film thermoelectric devices.
Hierarchical SnS2/carbon nanotube@reduced graphene oxide composite as an anode for ultra-stable sodium-ion batteries
Publisher: Elsevier BV
Date: 12-2020
Performance Optimization of a Thermoelectric‐Water Hybrid Cooling Garment
Publisher: Wiley
Date: 03-09-2023
A-site cation engineering enables oriented Ruddlesden-Popper perovskites towards efficient solar cells
Publisher: Springer Science and Business Media LLC
Date: 09-10-2022
Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization
Publisher: Elsevier BV
Date: 11-2013
Thermoelectric coolers for on-chip thermal management: Materials, design, and optimization
Publisher: Elsevier BV
Date: 10-2022
A flexible quasi-solid-state thermoelectrochemical cell with high stretchability as an energy-autonomous strain sensor
Publisher: Royal Society of Chemistry (RSC)
Date: 2021
DOI: 10.1039/D1MH00775K
Abstract: A self-powered strain sensing system based on a quasi-solid-state thermoelectrochemical cell is developed via combining remarkable thermoelectrochemical performance with excellent mechanical flexibility/stretchability.
Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers
Publisher: Elsevier BV
Date: 07-2015
Effect of annealing temperature on the corrosion behavior of duplex stainless steel studied by in situ techniques
Publisher: Elsevier BV
Date: 11-2011
Cheap, Large-Scale, and High-Performance Graphite-Based Flexible Thermoelectric Materials and Devices with Supernormal Industry Feasibility
Publisher: American Chemical Society (ACS)
Date: 07-02-2022
Abstract: Flexible thermoelectric materials and devices show great potential to solve the energy crisis but still face great challenges of high cost, complex fabrication, and tedious postprocessing. Searching for abnormal thermoelectric materials with rapid and scale-up production can significantly accelerate their applications. Here, we develop superlarge 25 × 20 cm
Roadmap on energy harvesting materials
Publisher: IOP Publishing
Date: 07-08-2023
Abstract: Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.
Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives
Publisher: SAGE Publications
Date: 11-05-2014
Abstract: For chemical-mechanical polishing of epitaxial gallium nitride (GaN), a two-step experiment method with two kinds of abrasives, aluminum oxide (Al 2 O 3 ) and colloidal silica (SiO 2 ), was put forward. The average material removal rates of GaN by the slurry with Al 2 O 3 and SiO 2 abrasives were 594.79 and 66.88 nm/h, respectively. An atomically flat surface with roughness (Ra) of 0.056 nm was obtained after the second chemical-mechanical polishing process with SiO 2 -based slurry, which presented an atomic step-terrace structure. The material removal characteristics of GaN surfaces were investigated in detail. A model was proposed to describe the different behaviors of the two kinds of abrasive during chemical-mechanical polishing process.
Advances in Ag2S-based thermoelectrics for wearable electronics: progress and perspective
Publisher: Elsevier BV
Date: 10-2023
High Thermoelectric Performance in Sintered Octahedron-Shaped Sn(CdIn)xTe1+2x Microcrystals
Publisher: American Chemical Society (ACS)
Date: 18-10-2018
Abstract: In this study, we fabricate In/Cd codoped octahedron-shape Sn(CdIn)
Front cover - Zhi-Gang Chen et al.
Publisher: Elsevier BV
Date: 06-2021
Dispersive localized Ta-rich area and Ta substitution approach ultralow lattice thermal conductivity in CrSi2
Publisher: Elsevier BV
Date: 03-2023
Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S2O82−-Fe2+ based slurry
Publisher: Elsevier BV
Date: 06-2017
Versatile Vanadium Doping Induces High Thermoelectric Performance in GeTe via Band Alignment and Structural Modulation
Publisher: Wiley
Date: 20-04-2021
Fast Fabrication of High‐Performance CoSb3‐Based Thermoelectric Skutterudites via One‐Step Yb‐Promoted Peritectic Solidification
Publisher: Wiley
Date: 05-07-2023
Abstract: As a most promising mid‐temperature thermoelectric material, CoSb 3 ‐based bulk material exhibits an applicable figure‐of‐merit ( ZT ) of more than one. However, their fabrication is historically time‐consuming due to the long‐time solid‐state phase transitions from CoSb 2 to CoSb 3 . To overcome this challenge, here, a fast one‐step process is developed to fabricate n‐type Yb‐doped CoSb 3 with stable ZT of 1.12 at 765 K in h. Experiments confirm Yb promotes peritectic reactions of CoSb + Liquid → CoSb 2 and CoSb 2 + Liquid → CoSb 3 , optimizes power factor, and suppresses thermal conductivity. Moreover, the dense grains, induced by the one‐step crystallization, result in outstanding mechanical properties with a Young's modulus of 171.4 GPa and a hardness of 8.8 GPa in the Yb‐doped CoSb 3 . This study indicates that the fast one‐step fabrication route can effectively promote the practical applications of CoSb 3 ‐based thermoelectrics and provide guidance for thermoelectric fabrication via rational phase design.
High Thermoelectric Performance in p‐type Polycrystalline Cd‐doped SnSe Achieved by a Combination of Cation Vacancies and Localized Lattice Engineering
Publisher: Wiley
Date: 29-01-2019
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