ORCID Profile
0000-0001-5084-2298
Current Organisation
Aalto University
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In Research Link Australia (RLA), "Research Topics" refer to ANZSRC FOR and SEO codes. These topics are either sourced from ANZSRC FOR and SEO codes listed in researchers' related grants or generated by a large language model (LLM) based on their publications.
Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Nanometrology | Nanotechnology | Nanoelectronics | Quantum Information, Computation and Communication | Condensed Matter Physics | Elemental Semiconductors |
Expanding Knowledge in the Physical Sciences | Expanding Knowledge in Engineering | Expanding Knowledge in Technology
Publisher: American Chemical Society (ACS)
Date: 19-05-2014
DOI: 10.1021/NL500927Q
Abstract: Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confinement of the dot using purposely engineered gate electrodes. Improvements in the operational robustness, as well as suppression of nonadiabatic transitions that reduce pumping accuracy, are achieved via small adjustments of the gate voltages. We can produce an output current in excess of 80 pA with experimentally determined relative uncertainty below 50 parts per million.
Publisher: American Physical Society (APS)
Date: 30-10-2017
Publisher: IEEE
Date: 08-2014
Publisher: American Chemical Society (ACS)
Date: 12-2009
DOI: 10.1021/NL901635J
Abstract: We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.
Publisher: AIP Publishing
Date: 23-05-2011
DOI: 10.1063/1.3593491
Abstract: We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp=240 MHz operation frequencies. The observed results are explained by a sequential tunneling model, which suggests that the electron gas may be heated substantially by the ac driving voltage.
Publisher: American Physical Society (APS)
Date: 23-03-2010
Publisher: Springer Science and Business Media LLC
Date: 30-09-2020
DOI: 10.1038/S41586-020-2753-3
Abstract: Radiation sensors based on the heating effect of absorbed radiation are typically simple to operate and flexible in terms of input frequency, so they are widely used in gas detection
Publisher: IOP Publishing
Date: 16-10-2015
Publisher: Springer Science and Business Media LLC
Date: 26-09-2010
DOI: 10.1038/NATURE09392
Abstract: The size of silicon transistors used in microelectronic devices is shrinking to the level at which quantum effects become important. Although this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in silicon can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility of eliminating nuclear spins from the bulk crystal. However, the control of single electrons in silicon has proved challenging, and so far the observation and manipulation of a single spin has been impossible. Here we report the demonstration of single-shot, time-resolved readout of an electron spin in silicon. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor-compatible with current microelectronic technology. We observed a spin lifetime of ∼6 seconds at a magnetic field of 1.5 tesla, and achieved a spin readout fidelity better than 90 per cent. High-fidelity single-shot spin readout in silicon opens the way to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.
Publisher: American Physical Society (APS)
Date: 15-06-2011
Publisher: IEEE
Date: 06-2014
Publisher: American Physical Society (APS)
Date: 05-10-2015
Publisher: American Physical Society (APS)
Date: 06-02-2023
Publisher: MyJove Corporation
Date: 03-06-2015
DOI: 10.3791/52852
Publisher: American Physical Society (APS)
Date: 26-09-2008
Publisher: AIP Publishing
Date: 14-12-2009
DOI: 10.1063/1.3272858
Abstract: We report on low-temperature electronic transport measurements of a silicon metal-oxidesemiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads.
Publisher: American Physical Society (APS)
Date: 11-09-2008
Publisher: AIP
Date: 2011
DOI: 10.1063/1.3666397
Publisher: American Physical Society (APS)
Date: 08-09-2015
Publisher: AIP Publishing
Date: 05-12-2022
DOI: 10.1063/5.0129345
Abstract: We present here our recent results on qubit reset scheme based on a quantum-circuit refrigerator (QCR). In particular, we use the photon-assisted quasiparticle tunneling through a superconductor–insulator–normal-metal–insulator–superconductor junction to controllably decrease the energy relaxation time of the qubit during the QCR operation. In our experiment, we use a transmon qubit with dispersive readout. The QCR is capacitively coupled to the qubit through its normal-metal island. We employ rapid, square-shaped QCR control voltage pulses with durations in the range of 2–350 ns and a variety of litudes to optimize the reset time and fidelity. Consequently, we reach a qubit ground-state probability of roughly 97% with 80-ns pulses starting from the first excited state. The qubit state probability is extracted from averaged readout signal, where the calibration is based on Rabi oscillations, thus not distinguishing the residual thermal population of the qubit.
Publisher: American Physical Society (APS)
Date: 31-10-2012
Publisher: American Chemical Society (ACS)
Date: 19-06-2202
DOI: 10.1021/ACS.NANOLETT.8B00874
Abstract: In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency-dependent features in the pumped current.
Publisher: American Physical Society (APS)
Date: 19-02-2015
Publisher: American Physical Society (APS)
Date: 08-04-2010
Start Date: 2012
End Date: 12-2015
Amount: $440,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 2016
End Date: 06-2019
Amount: $470,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 06-2020
End Date: 05-2024
Amount: $630,000.00
Funder: Australian Research Council
View Funded ActivityStart Date: 12-2020
End Date: 12-2023
Amount: $550,000.00
Funder: Australian Research Council
View Funded Activity