ORCID Profile
0000-0003-0520-9121
Current Organisation
Nanchang University
Does something not look right? The information on this page has been harvested from data sources that may not be up to date. We continue to work with information providers to improve coverage and quality. To report an issue, use the Feedback Form.
Publisher: Elsevier BV
Date: 02-2020
Publisher: AIP Publishing
Date: 16-10-2017
DOI: 10.1063/1.5001265
Abstract: Flexoelectricity couples strain gradient to polarization and usually exhibits a large coefficient in the paraelectric phase of the ferroelectric perovskites. In this study, we employed the relaxor 0.3Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PIN-PMN-PT) single crystals to study the relationship between flexoelectric coefficients and the crystal structure. The flexoelectric coefficients in PIN-PMN-PT single crystal are found to vary from 57 μC/m at orthorhombic/monoclinic phase to 135 μC/m at tetragonal phase, and decreases to less than 27 μC/m in the temperature above Tm. This result discloses that ferroelectricity can significantly enhance the flexoelectricity in this kind of perovskite.
Publisher: AIP Publishing
Date: 29-10-2018
DOI: 10.1063/1.5045716
Abstract: In this letter, we report on significant flexoelectric fatigue in lead-free (K,Na,Li)(Nb,Sb)O3 (KNNLS) ceramics. In the ferroelectric phase of KNNLS, the observed effective transverse flexoelectric coefficient, which is initially as high as 1 μC/m, decreases nonlinearly with increasing cycles of strain gradient, and the fatigue regulation is well reproduced by a stretched exponential function. By comparing the time dependence of dielectric permittivity and ferroelectricity in KNNLS ceramics, we conclude that large flexoelectric and flexocoupling coefficients in the ferroelectric phase originate mainly from ferroelectricity and that the related flexoelectric fatigue is likely due to the pinning effect of ferroelectric domains.
Publisher: AIP Publishing
Date: 25-02-2019
DOI: 10.1063/1.5082803
Abstract: Ultrathin and transparent metal films are considered as desirable materials to substitute indium-tin oxide based transparent electrodes. In this work, we report that an Al-doped ZnO layer effectively induced the formation of epitaxial ultrathin and ultrasmooth Au films on mica. The ultrathin Au film shows optimum electrical conductivity, optical properties, and high tolerance to mechanical bending, including a low sheet resistance of 8 Ω/sq and a high average transmittance of 80.1%, and maintains low electric resistivity even after 1000 continuous bending cycles. Moreover, the Au/AZO anode-based organic light-emitting diode was fabricated with the maximum luminance intensity of 32 540 cd/cm2, which demonstrates that it is promising for application in next generation optoelectronic devices.
Publisher: Elsevier BV
Date: 2020
Publisher: Elsevier BV
Date: 06-2019
Publisher: AIP Publishing
Date: 30-09-2019
DOI: 10.1063/1.5115561
Abstract: Flexoelectricity yields electric polarization through graded strains and exists in various kinds of solid dielectrics but usually with a weak coupling response. In this letter, several Bi-doped Pb(Mg2/3Nb1/3)O3-xPbTiO3 (PMN-xPT) ferroelectric ceramics were prepared and the interplay of their piezoelectricity and flexoelectricity was systematically investigated. The largest flexoelectric response (∼300 μC/m) was 30 times larger than that of pure PMN-PT and was observed in the Bi-doped PMN-32PT, where the after poling piezoelectric coefficients were also the largest (990 pC/N) among all the compositions. This suggests that the apparent flexoelectricity in ferroelectrics is highly related to the bulk piezoelectricity. Therefore, introducing a local structural heterogeneity is considered as a feasible approach to achieve an ultrahigh piezoelectric response while also providing an ultrahigh flexoelectricity.
Publisher: Tsinghua University Press
Date: 06-2019
Publisher: Elsevier BV
Date: 09-2019
No related grants have been discovered for Zhenggang Rao.