ORCID Profile
0000-0003-3302-3375
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Publisher: AIP Publishing
Date: 07-1984
DOI: 10.1063/1.94977
Abstract: We report the first pulse width study of the various morphological changes and bulk phase transitions of single crystal silicon irradiated by 1-μm pulses of 4–260-ps duration. In particular, we find that amorphous silicon is formed from the melt contrary to published expectations, but only for pulse widths less than 10 ps. We also find that the single shot melting threshold is pulse width dependent. Additionally, we observe the growth of multishot damage and of periodic ripple patterns with pulses as short as 4 ps.
Publisher: MDPI AG
Date: 28-05-2023
DOI: 10.3390/PATHOGENS12060770
Abstract: Infection with viruses, bacteria, and parasites are thought to be the underlying cause of about 8–17% of the world’s cancer burden, i.e., approximately one in every five malignancies globally is caused by an infectious pathogen. Oncogenesis is thought to be aided by eleven major pathogens. It is crucial to identify microorganisms that potentially act as human carcinogens and to understand how exposure to such pathogens occur as well as the following carcinogenic pathways they induce. Gaining knowledge in this field will give important suggestions for effective pathogen-driven cancer care, control, and, ultimately, prevention. This review will mainly focus on the major onco-pathogens and the types of cancer caused by them. It will also discuss the major pathways which, when altered, lead to the progression of these cancers.
Publisher: Springer Science and Business Media LLC
Date: 1985
DOI: 10.1038/313100A0
Publisher: AIP Publishing
Date: 08-1986
DOI: 10.1063/1.337362
Abstract: The numerous bulk and surface structural changes observed in c-Si following melting with 1-μm pulses that range from 4 to 260 ps in duration and fluences from about 0.6 to 2.8 J cm−2 are examined by Nomarski and transmission electron microscope techniques. For melting pulse widths 30 ps or longer, recrystallization from the melt was observed. By contrast, for the shorter pulses (∼7 ps), the steep temperature gradients that accompany the onset of two-photon absorption associated with pulses of this width produce an undercooled melt. Under these conditions, the resolidification velocities are evidently too high to allow epitaxial regrowth from the crystalline substrate and, for the first time, regions of amorphous and large- and fine-grain polycrystalline silicon are observed to form directly on a crystalline underlayer. In addition, alternate stripes of amorphous and crystalline material are produced by these short pulses. These are associated with localized melting, demonstrating that uniform surface melting is not always required before a spatial modulation of the absorbed surface energy can occur.
Publisher: AIP Publishing
Date: 15-02-1985
DOI: 10.1063/1.95633
Abstract: The reflectivity of crystalline silicon irradiated by intense 46-ps pulses at 1 μm has been measured using an optical pump-probe technique and also by imaging the irradiated s le surface on to a vidicon. We clearly resolve dramatic fluence-dependent reflectivity changes across the profile of the melted region that are consistent with rapid melting within the pulse duration and the formation of a superheated liquid layer.
Location: India
No related grants have been discovered for Steven Moss.