Linkage - International - Grant ID: LX0348128

Funding Activity

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Funded Activity Summary

Co-doping and transition metal doping of Gallium Nitride. Spintronics is poised to create a new paradigm in device electronics. Gallium nitride (GaN) containing trace amounts of transition metals (such as Fe,Ni) is a promising dilute magnetic semiconductor for spintronics as this material exhibits magnetic behaviour above room temperature. However, the electronic and magnetic properties of these GaN-based semiconductors have not been optimized, as yet. This project aims to establish and test a new growth strategy, know as the co-doping method, for the fabricate of high quality transition metal doped GaN. A broad range of complementary spectroscopic techniques will be used to refine this new fabrication technique.

Funded Activity Details

Start Date: 01-06-2003

End Date: 30-06-2006

Funding Scheme: Linkage - International

Funding Amount: $30,600.00

Funder: Australian Research Council