Linkage - International - Grant ID: LX0231874

Funding Activity

Website
http://dataportal.arc.gov.au/NCGP/Web/Grant/Grant/LX0231874

Funding Status
Closed

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Funded Activity Summary

Optoelectronic properties of low-dimensional semiconductor systems and semiconductor nanostructures under terahertz free-electron laser radiation. The recent application of terahertz (THz) free-electron lasers (FELs) to scientific investigation into low-dimensional semiconductor systems and semiconductor nanostructures has opened up a new field of research in semiconductor optoelectronics. This project will conduct a joint experimental and theoretical study of how these novel systems interact with intense THz laser fields. Experimentally, we plan to use Beijing FELs in China to study optoelectronic properties in GaAs-and GaN based systems. Theoretically, we intend developing fundamental new approaches to theory of electron interactions with intense laser fields in semiconductors and relating theoretical results to experiments and experimental findings.

Funded Activity Details

Start Date: 01-01-2003

End Date: 31-12-2004

Funding Scheme: Linkage - International

Funding Amount: $28,800.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Materials Engineering Not Elsewhere Classified | Optical Physics | Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity | Optics And Opto-Electronic Physics |

ANZSRC Socio-Economic Objective (SEO)

Physical sciences | Other

Other Keywords

Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity | Materials Engineering Not Elsewhere Classified | Optical Physics | Optics And Opto-Electronic Physics | Other | Physical sciences

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