Linkage Projects - Grant ID: LP190100010

Funding Activity

Website
http://dataportal.arc.gov.au/NCGP/Web/Grant/Grant/LP190100010

Funding Status
Active

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Funded Activity Summary

Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconductor interfaces; determining how ultra-shallow dopant profiles are affected by device structure and processing; and developing improved methods for measuring ultra-low contact resistivity. The research will be undertaken as a collaboration between researchers at the Australian National University and Applied Materials Ltd.

Funded Activity Details

Start Date: 01-01-2021

End Date: 31-12-2023

Funding Scheme: Linkage Projects

Funding Amount: $307,440.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Condensed Matter Physics | Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Nanofabrication, Growth and Self Assembly

ANZSRC Socio-Economic Objective (SEO)

Expanding Knowledge in the Physical Sciences | Expanding Knowledge in Engineering | Expanding Knowledge in Technology |

Other Keywords

Condensed Matter Physics | Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Expanding Knowledge in Engineering | Expanding Knowledge in Technology | Expanding Knowledge in the Physical Sciences | Nanofabrication, Growth and Self Assembly

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