Linkage Projects - Grant ID: LP150100693

Funding Activity

Website
http://dataportal.arc.gov.au/NCGP/Web/Grant/Grant/LP150100693

Funding Status
Closed

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Funded Activity Summary

Ion-beam synthesis of functional oxides for next generation memory devices. This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitable for non-volatile memory applications. However, their electrical response depends critically on stoichiometry and this must be precisely engineered for optimal device performance. This project aims to develop next-generation memory devices as a replacement for current flash memory. The proposed technology uses resistance changes in functional-oxides to store information, and offers the potential for smaller and faster memory.

Funded Activity Details

Start Date: 30-06-2016

End Date: 23-03-2020

Funding Scheme: Linkage Projects

Funding Amount: $410,000.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Functional Materials | Condensed Matter Physics | Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Microelectronics and Integrated Circuits |

ANZSRC Socio-Economic Objective (SEO)

Expanding Knowledge in the Physical Sciences | Expanding Knowledge in Engineering | Expanding Knowledge in Technology

Other Keywords

Condensed Matter Physics | Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Expanding Knowledge in Engineering | Expanding Knowledge in Technology | Expanding Knowledge in the Physical Sciences | Functional Materials | Microelectronics and Integrated Circuits

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