Linkage Projects - Grant ID: LP0882791

Funding Activity

Does something not look right? The information on this page has been harvested from data sources that may not be up to date. We continue to work with information providers to improve coverage and quality. To report an issue, use the .

Funded Activity Summary

Non-destructive characterisation of residual stresses for the silicon-on-sapphire technology. Every sapphire wafer for the fabrication of integrated circuits using the silicon-on-sapphire technology is worth more than a thousand dollars, and the cost grows exponentially with successive processing of circuitry. Early detection and prevention of wafer failure is therefore an economic and quality necessity. The fast, non-destructive method to be developed by the proposed research will enable semiconductor electronics manufacturers to achieve a cost-effective fabrication of integrated circuits by detecting damages in wafers at the very early stage of production.

Funded Activity Details

Start Date: 01-05-2008

End Date: 01-05-2011

Funding Scheme: Linkage Projects

Funding Amount: $290,076.00

Funder: Australian Research Council