Linkage Projects - Grant ID: LP0455318

Funding Activity

Website
http://dataportal.arc.gov.au/NCGP/Web/Grant/Grant/LP0455318

Funding Status
Closed

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Funded Activity Summary

Towards a high density silicon phase change memory device. This project builds upon our exciting recent findings that amorphous silicon can be transformed to a conducting crystalline phase following small-scale indentation. Furthermore the process is reversible as re-indentation can induce a transformation back to insulating amorphous silicon. This process appears to occur in extremely small (nanoscale) volumes of silicon. We plan to explore the viability of exploiting this behaviour to develop an entirely new information storage system: a high-density silicon phase change memory. This project aims to study small-scale transformation behaviour in silicon and to design demonstrator memory devices based on both micro-electromechanical systems and solid state technologies.

Funded Activity Details

Start Date: 20-12-2004

End Date: 20-12-2007

Funding Scheme: Linkage Projects

Funding Amount: $665,630.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Materials Engineering Not Elsewhere Classified | Nanotechnology | Computer Hardware | Memory Structures |

ANZSRC Socio-Economic Objective (SEO)

Chemical sciences | Computer hardware and electronic equipment not elsewhere classified

Other Keywords

Chemical sciences | Computer Hardware | Computer hardware and electronic equipment not elsewhere classified | Materials Engineering Not Elsewhere Classified | Memory Structures | Nanotechnology

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