Linkage Infrastructure, Equipment and Facilities - Grant ID: LE140100170

Funded Activity Summary

Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the electrons and holes move inside a material or device. This project will create a new scanning gate microscope facility for imaging electrical current flow in advanced quantum devices and the new generation of topological insulators and atomically thin crystals such as graphene. The project will stimulate new studies of the next generation of electronic materials and devices, providing the underpinning knowledge for the future development of post silicon electronics.

Funded Activity Details

Start Date: 01-01-2014

End Date: 31-12-2017

Funding Scheme: Linkage Infrastructure, Equipment and Facilities

Funding Amount: $560,000.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Nanotechnology | Nanoscale Characterisation | Nanoelectronics

ANZSRC Socio-Economic Objective (SEO)

Expanding Knowledge in the Physical Sciences | Integrated Circuits and Devices | Expanding Knowledge in Technology |

Other Keywords

Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Expanding Knowledge in Technology | Expanding Knowledge in the Physical Sciences | Integrated Circuits and Devices | Nanoelectronics | Nanoscale Characterisation | Nanotechnology

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