ARC Future Fellowships - Grant ID: FT180100541

Funding Activity

Website
http://dataportal.arc.gov.au/NCGP/Web/Grant/Grant/FT180100541

Funding Status
Active

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Funded Activity Summary

Oxide-semiconductor epitaxy: towards next generation nanoelectronics. This project aims to integrate high quality functional oxide heterostructures with semiconductor platforms and address the fundamental obstacles in oxides for highly efficient and high-speed transistor applications by engineering their electronic band structures. The project aims to establish a bridge between the diverse electronic properties of oxides and the established semiconductor platform, and generate new devices and functionalities. Expected outcomes include epitaxial functional oxides on Gallium arsenide with ultrahigh, room-temperature sheet electron mobility and a comprehensive understanding of its microscopic origin. This will fundamentally change the route toward novel transistors based on high speed and low energy oxide electronics.

Funded Activity Details

Start Date: 01-11-2018

End Date: 31-10-2023

Funding Scheme: ARC Future Fellowships

Funding Amount: $873,125.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Functional Materials | Materials Engineering | Nanofabrication, Growth and Self Assembly

ANZSRC Socio-Economic Objective (SEO)

Ceramics | Expanding Knowledge in Technology |

Other Keywords

Ceramics | Expanding Knowledge in Technology | Functional Materials | Materials Engineering | Nanofabrication, Growth and Self Assembly

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