ARC Future Fellowships - Grant ID: FT120100445

Funding Activity

Website
http://dataportal.arc.gov.au/NCGP/Web/Grant/Grant/FT120100445

Funding Status
Closed

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Funded Activity Summary

Hetero-epitaxial silicon carbide: enabling wide-band-gap semiconductors on silicon for greener technologies. In the next decade wide band gap materials will unlock vast potential for a capillary outreach of smart heterogeneous devices, improving energy efficiency and lessening our carbon footprint. This project will aim at major breakthroughs, enabling this pressing technological demand, and putting Australia at the leading edge of this revolution.

Funded Activity Details

Start Date: 24-08-2012

End Date: 31-12-2016

Funding Scheme: ARC Future Fellowships

Funding Amount: $713,328.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Manufacturing Engineering | Compound Semiconductors | Microtechnology | Microelectromechanical Systems (MEMS)

ANZSRC Socio-Economic Objective (SEO)

Residential Energy Conservation and Efficiency | Manufacturing not elsewhere classified | Expanding Knowledge in Technology |

Other Keywords

Compound Semiconductors | Expanding Knowledge in Technology | Manufacturing Engineering | Manufacturing not elsewhere classified | Microelectromechanical Systems (MEMS) | Microtechnology | Residential Energy Conservation and Efficiency

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