Discovery Projects - Grant ID: DP170102552

Funded Activity Summary

Building up quantum electronics with tailored semiconductor nanostructures. This project aims to develop nanoscale indium arsenide/ gallium antimonide (InAs/GaSb) devices produced ‘from the bottom up’ using three-dimensional templated semiconductor growth methods. This material has a pair of electron and hole layers separated by a few nanometres, which provide access to states of matter such as exciton condensates and topological insulators with potential use in quantum information technologies. The project will use templates growth to create devices where the InAs/GaSb interface sits perpendicular to the device plane. This project’s work on growth, design and production of nanoscale devices will give Australia’s transitioning economy competitive advantage and agility in critical sectors of nanotechnology, quantum technologies and energy efficient devices.

Funded Activity Details

Start Date: 07-06-2017

End Date: 31-12-2020

Funding Scheme: Discovery Projects

Funding Amount: $300,000.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Quantum Information, Computation and Communication | Condensed Matter Physics | Electronic and Magnetic Properties of Condensed Matter; Superconductivity |

ANZSRC Socio-Economic Objective (SEO)

Expanding Knowledge in the Physical Sciences | Expanding Knowledge in Technology

Other Keywords

Condensed Matter Physics | Electronic and Magnetic Properties of Condensed Matter; Superconductivity | Expanding Knowledge in Technology | Expanding Knowledge in the Physical Sciences | Quantum Information, Computation and Communication

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