Discovery Projects - Grant ID: DP0452309

Funding Activity

Website
http://dataportal.arc.gov.au/NCGP/Web/Grant/Grant/DP0452309

Funding Status
Closed

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Funded Activity Summary

Development of growth strategies to fabricate wide band gap ferromagnetic semiconductors for spin electronics applications. Spin Electronics technology will enable a revolutionary class of electronic devices. Gallium nitride (GaN) containing transition metals (TM) (eg Mn, Ni and Fe) is a very promising dilute magnetic semiconductor for practical spintronics applications as this material exhibits magnetic behaviour above room temperature. However, electronic and magnetic properties of this new class of semiconductors have not yet been optimised. This project aims to develop and test a new growth strategy, known as the co-doping method for the fabrication of high quality TM doped GaN. A broad range of complementary advanced spectroscopic techniques will be used to evaluate and refine this new fabrication method.

Funded Activity Details

Start Date: 01-03-2004

End Date: 31-12-2007

Funding Scheme: Discovery Projects

Funding Amount: $294,000.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Materials Engineering Not Elsewhere Classified | Nanotechnology | Materials Engineering

ANZSRC Socio-Economic Objective (SEO)

Other | Physical sciences |

Other Keywords

Materials Engineering | Materials Engineering Not Elsewhere Classified | Nanotechnology | Other | Physical sciences

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