Discovery Projects - Grant ID: DP0346374

Funding Activity

Website
http://dataportal.arc.gov.au/NCGP/Web/Grant/Grant/DP0346374

Funding Status
Closed

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Funded Activity Summary

Charge and Interface Properties of Novel Gallium Nitride Transistor Structures for Application in Low-Noise High-Frequency Electronics. Gallium Nitride (GaN)-based transistors offer a unique opportunity to simultaneously achieve both high power and low noise from amplifiers. This project aims to improve material and device design of GaN-based transistors. It comprises a systematic comparison of charge and interface properties with power and noise performance measurements of high electron mobility transistors grown using a broad variety of novel growth, processing and device innovations. The expected outcome of the program includes key advances in the areas of GaN materials growth, device processing and passivation technology, which will ultimately lead to breakthrough performance in ultra-low-noise electronics for high frequency systems.

Funded Activity Details

Start Date: 26-01-2003

End Date: 25-01-2006

Funding Scheme: Discovery Projects

Funding Amount: $261,000.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Electrical and Electronic Engineering | Integrated Circuits | Other Electronic Engineering |

ANZSRC Socio-Economic Objective (SEO)

Combined operations | Integrated circuits and devices | Communication equipment not elsewhere classified

Other Keywords

Combined operations | Communication equipment not elsewhere classified | Electrical and Electronic Engineering | Integrated Circuits | Integrated circuits and devices | Other Electronic Engineering

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