Discovery Projects - Grant ID: DP0343927

Funded Activity Summary

Fabrication and monolithic integration of III-V semiconductor photonic devices using impurity-free interdiffusion. The objective of this project is to achieve the integration of GaAs- and InP-based photonic devices using the atomic interdiffusion technique. The project will use the key understanding of the atomic relocation process in the GaAs-based system, with novel laser designs. Furthermore, elucidating the more complicated interdiffusion mechanism in the InP-based system will be a precursor to device integration. This project also aims to understand the interdiffusion mechanism in quantum dot structures, which are important for high performance optoelectronic devices. The fabrication of novel photonic integrated circuits (PICs) will generate patentable technology, and enhance Australia's semiconductor optoelectronic and photonic industry.

Funded Activity Details

Start Date: 01-01-2003

End Date: 31-12-2006

Funding Scheme: Discovery Projects

Funding Amount: $510,000.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Materials Engineering Not Elsewhere Classified | Other Electronic Engineering | Optics And Opto-Electronic Physics | Materials Engineering

ANZSRC Socio-Economic Objective (SEO)

Communication services not elsewhere classified | Communication equipment not elsewhere classified | Physical sciences |

Other Keywords

Communication equipment not elsewhere classified | Communication services not elsewhere classified | Materials Engineering | Materials Engineering Not Elsewhere Classified | Optics And Opto-Electronic Physics | Other Electronic Engineering | Physical sciences

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