Discovery Projects - Grant ID: DP0208128

Funding Activity

Website
http://dataportal.arc.gov.au/NCGP/Web/Grant/Grant/DP0208128

Funding Status
Closed

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Funded Activity Summary

Ion implantation processing in Silicon Carbide for microelectronic applications. The aim of this project is to study the application of ion implantation to silicon carbide for dopant incorporation and defect engineering. The successful dopant incorporation, especially p-type doping will be crucial for SiC high power and high frequency devices. The outcomes of the project are (a) the understanding of extended and point defect formation in silicon carbide from ion implantation. (b) detailed characterisation of the extended defects formed by ion implantation (c) establishment of dose regimes for point defects and extended defect formation and (d) development of procedures for the incorporation of dopants with minimum residual defect formation.

Funded Activity Details

Start Date: 01-01-2002

End Date: 31-12-2008

Funding Scheme: Discovery Projects

Funding Amount: $619,411.00

Funder: Australian Research Council

Research Topics

ANZSRC Field of Research (FoR)

Materials Engineering Not Elsewhere Classified | Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity | Condensed Matter Physics—Structural Properties | Materials Engineering

ANZSRC Socio-Economic Objective (SEO)

Integrated circuits and devices | Physical sciences |

Other Keywords

Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity | Condensed Matter Physics—Structural Properties | Integrated circuits and devices | Materials Engineering | Materials Engineering Not Elsewhere Classified | Physical sciences

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