Website
http://dataportal.arc.gov.au/NCGP/API/grants/DP120101096
Funding Status
Closed
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Funded Activity Summary
The effect of stress on the production and evolution of defects in ion-implanted silicon. This project aims to improve the reliability of semiconductor devices by understanding how stresses created within the device during processing affect the formation and migration of defects, and by using this information to improve device modelling and process simulation.Funded Activity Details
Start Date: 2012
End Date: 12-2015
Funding Scheme: Discovery Projects
Funding Amount: $300,000.00
Funder: Australian Research Council
Research Topics
ANZSRC Field of Research (FoR)
Surfaces and Structural Properties of Condensed Matter | Condensed Matter Physics | Elemental Semiconductors |
ANZSRC Socio-Economic Objective (SEO)
Expanding Knowledge in the Physical Sciences | Expanding Knowledge in Engineering | Expanding Knowledge in Technology
