Back to the future: making atomic-scale high-speed germanium transistors. This project links scientists from Australia and Italy to develop atomic-scale devices in the germanium material. By exploiting the unique properties of this material and its integration with silicon, faster and smaller transistors will be developed.
Discovery Early Career Researcher Award - Grant ID: DE160101334
Funder
Australian Research Council
Funding Amount
$373,536.00
Summary
Atomic Engineering of Molybdenum Disulfide for Ultra-Scaled Electronics. This project aims to explore novel approaches to device fabrication and functionality by atomic-level engineering of next generation electronic materials. As transistors shrink towards the atomic scale, conventional fabrication methods fail and device behaviour is altered by emerging quantum effects. Atomically thin two-dimensional (2D) crystals are emerging as next-generation electronic materials in nanoelectronics. Howeve ....Atomic Engineering of Molybdenum Disulfide for Ultra-Scaled Electronics. This project aims to explore novel approaches to device fabrication and functionality by atomic-level engineering of next generation electronic materials. As transistors shrink towards the atomic scale, conventional fabrication methods fail and device behaviour is altered by emerging quantum effects. Atomically thin two-dimensional (2D) crystals are emerging as next-generation electronic materials in nanoelectronics. However, no reliable fabrication techniques currently exist at the targeted sub-10-nanometre scale and basic scientific investigation of the operation of these ultimately small devices is needed. The project plans to use innovative approaches to investigate the physics of atomic-scale electronic devices and explore entirely new device concepts and functionalities for future quantum electronics.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE180100190
Funder
Australian Research Council
Funding Amount
$205,000.00
Summary
High through-put facility for measurement of quantum materials and devices. This projects aims to accelerate the development of quantum technologies by expanding our capacity to rapidly evaluate the low temperature electrical and optical properties of novel materials and devices. The project expects to generate new knowledge in quantum coherent phases of diamond, high mobility two-dimensional spintronics, hybrid semiconductor-superconductor devices, novel phases of silicon and germanium, and sin ....High through-put facility for measurement of quantum materials and devices. This projects aims to accelerate the development of quantum technologies by expanding our capacity to rapidly evaluate the low temperature electrical and optical properties of novel materials and devices. The project expects to generate new knowledge in quantum coherent phases of diamond, high mobility two-dimensional spintronics, hybrid semiconductor-superconductor devices, novel phases of silicon and germanium, and single photon sources based on silicon-carbide. Expected outcomes of the project include the establishment of high performing, efficient, new facilities for low temperature quantum measurement, the strengthening of collaborative links between participating researchers and the expansion of opportunities for research students.Read moreRead less
Surface doping of diamond: A new platform for 2D carbon-based spintronics. This project aims to develop the hydrogen-terminated surface of diamond as a new semiconducting platform for carbon-based spintronics. It will build upon recent experimental advances that have shown diamond to possess a two-dimensional (2D) hole-based system with strong spin-orbit coupling. As a semiconductor with unique spin properties, surface conducting diamond offers considerable advantages over other 2D materials su ....Surface doping of diamond: A new platform for 2D carbon-based spintronics. This project aims to develop the hydrogen-terminated surface of diamond as a new semiconducting platform for carbon-based spintronics. It will build upon recent experimental advances that have shown diamond to possess a two-dimensional (2D) hole-based system with strong spin-orbit coupling. As a semiconductor with unique spin properties, surface conducting diamond offers considerable advantages over other 2D materials such as graphene and topological insulators. These unique properties will be exploited to realise novel semiconductor device architectures for the manipulation of spin using electric fields, and for the study of new spin transport phenomena and quasiparticle excitations at semiconductor-superconductor interfaces.Read moreRead less
The Silicon Single Electron Pump: A New World Standard for Electric Current. This project seeks to develop a new ultra-high-precision current standard, providing a missing link in today’s world standards for electrical measurement. Although highly accurate metrological standards are available for both voltage and resistance, there is no equivalent current standard available. The project aims to create nanoelectronic charge-pump devices that can generate a highly accurate output current. This pro ....The Silicon Single Electron Pump: A New World Standard for Electric Current. This project seeks to develop a new ultra-high-precision current standard, providing a missing link in today’s world standards for electrical measurement. Although highly accurate metrological standards are available for both voltage and resistance, there is no equivalent current standard available. The project aims to create nanoelectronic charge-pump devices that can generate a highly accurate output current. This project plans to use silicon-based single-electron-transistor technology to undertake high-precision measurements. The project expects to contribute to the technological basis for a new world current standard.Read moreRead less
Single electron pumping for current measurement standards. Precision measurement standards for electric current and voltage are necessary to ensure the safe and accurate operation of much of the electronic equipment that underpins modern society. This project will develop a new ultra-high-precision current standard, providing a missing link in today's world standards for electrical measurement.
Discovery Early Career Researcher Award - Grant ID: DE160101490
Funder
Australian Research Council
Funding Amount
$373,536.00
Summary
Probing topological edge channels at the atomic scale. This project is anticipated to provide a platform for nanoelectronic devices where quantum degrees of freedom remain robust up to very high temperatures. The one-dimensional edge channels of two-dimensional topological insulators are an emerging research area that challenges our understanding of quantum matter at the atomic scale. The project aims to deliver a new insight into the nature of edge channel transport and scattering by directly m ....Probing topological edge channels at the atomic scale. This project is anticipated to provide a platform for nanoelectronic devices where quantum degrees of freedom remain robust up to very high temperatures. The one-dimensional edge channels of two-dimensional topological insulators are an emerging research area that challenges our understanding of quantum matter at the atomic scale. The project aims to deliver a new insight into the nature of edge channel transport and scattering by directly measuring their wave functions and quasi-particle excitations with atomic scale resolution. By applying these methods to systems with very large topological gaps, the anticipated results will provide a foundation for robust high-temperature, industry-compatible spintronics. The intended outcomes may improve computational speed in new information technologies and reduce power consumption.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE140100775
Funder
Australian Research Council
Funding Amount
$394,177.00
Summary
Punching holes in GaAs: a novel route to making artificial graphene and topological insulators. In the past seven years there has been an explosion of interest in materials such as graphene and topological insulators due to their unique electronic properties, culminating in the award of the 2010 Nobel Prize in Physics. However these materials face significant challenges that limit how we can manipulate them and use them in industry. This project will overcome these challenges by developing artif ....Punching holes in GaAs: a novel route to making artificial graphene and topological insulators. In the past seven years there has been an explosion of interest in materials such as graphene and topological insulators due to their unique electronic properties, culminating in the award of the 2010 Nobel Prize in Physics. However these materials face significant challenges that limit how we can manipulate them and use them in industry. This project will overcome these challenges by developing artificial graphene and topological insulators made using existing nanofabrication techniques on conventional semiconductors already used by industry. This will make it possible to study the unique electronic properties of these materials with unprecedented control, with the ultimate aim of using artificially designed electronic materials in industry.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE100100146
Funder
Australian Research Council
Funding Amount
$800,000.00
Summary
Ultra high vacuum scanning probe microscope facility. Ultra high-vacuum scanning tunneling microscopy underpins advances in the understanding of novel materials for electronics, engineering and medical applications, including thin-films, nanostructures, advanced semiconductors, nanostructured (organic or inorganic) conductors, and nanoscale interfaces (heteronanostructures). It is a core technique underpinning the new Superscience agenda in Future Technologies. A number of present and future re ....Ultra high vacuum scanning probe microscope facility. Ultra high-vacuum scanning tunneling microscopy underpins advances in the understanding of novel materials for electronics, engineering and medical applications, including thin-films, nanostructures, advanced semiconductors, nanostructured (organic or inorganic) conductors, and nanoscale interfaces (heteronanostructures). It is a core technique underpinning the new Superscience agenda in Future Technologies. A number of present and future research fields will benefit from the presence of this instrument, which will enhance Australia's competitiveness in nanotechnology research and development. Training of PhD and graduate students in this area is essential to exploit the potentiality of nanotechnology for the future benefit of Australia.Read moreRead less
Electron transport in semiconductor nanowire devices - Setting two top nanoelectronics problems on the straight and narrow. This project will establish a new program to build electronic devices using tiny semiconductor nanowires. This project will contribute strongly to Australia's ongoing efforts in semiconductor nanotechnology and quantum information science, and allow Australia to play a leading role in the development of the next generation of electronics technologies.