Back to the future: making atomic-scale high-speed germanium transistors. This project links scientists from Australia and Italy to develop atomic-scale devices in the germanium material. By exploiting the unique properties of this material and its integration with silicon, faster and smaller transistors will be developed.
The Silicon Single Electron Pump: A New World Standard for Electric Current. This project seeks to develop a new ultra-high-precision current standard, providing a missing link in today’s world standards for electrical measurement. Although highly accurate metrological standards are available for both voltage and resistance, there is no equivalent current standard available. The project aims to create nanoelectronic charge-pump devices that can generate a highly accurate output current. This pro ....The Silicon Single Electron Pump: A New World Standard for Electric Current. This project seeks to develop a new ultra-high-precision current standard, providing a missing link in today’s world standards for electrical measurement. Although highly accurate metrological standards are available for both voltage and resistance, there is no equivalent current standard available. The project aims to create nanoelectronic charge-pump devices that can generate a highly accurate output current. This project plans to use silicon-based single-electron-transistor technology to undertake high-precision measurements. The project expects to contribute to the technological basis for a new world current standard.Read moreRead less
Single electron pumping for current measurement standards. Precision measurement standards for electric current and voltage are necessary to ensure the safe and accurate operation of much of the electronic equipment that underpins modern society. This project will develop a new ultra-high-precision current standard, providing a missing link in today's world standards for electrical measurement.
Discovery Early Career Researcher Award - Grant ID: DE160101490
Funder
Australian Research Council
Funding Amount
$373,536.00
Summary
Probing topological edge channels at the atomic scale. This project is anticipated to provide a platform for nanoelectronic devices where quantum degrees of freedom remain robust up to very high temperatures. The one-dimensional edge channels of two-dimensional topological insulators are an emerging research area that challenges our understanding of quantum matter at the atomic scale. The project aims to deliver a new insight into the nature of edge channel transport and scattering by directly m ....Probing topological edge channels at the atomic scale. This project is anticipated to provide a platform for nanoelectronic devices where quantum degrees of freedom remain robust up to very high temperatures. The one-dimensional edge channels of two-dimensional topological insulators are an emerging research area that challenges our understanding of quantum matter at the atomic scale. The project aims to deliver a new insight into the nature of edge channel transport and scattering by directly measuring their wave functions and quasi-particle excitations with atomic scale resolution. By applying these methods to systems with very large topological gaps, the anticipated results will provide a foundation for robust high-temperature, industry-compatible spintronics. The intended outcomes may improve computational speed in new information technologies and reduce power consumption.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE140100775
Funder
Australian Research Council
Funding Amount
$394,177.00
Summary
Punching holes in GaAs: a novel route to making artificial graphene and topological insulators. In the past seven years there has been an explosion of interest in materials such as graphene and topological insulators due to their unique electronic properties, culminating in the award of the 2010 Nobel Prize in Physics. However these materials face significant challenges that limit how we can manipulate them and use them in industry. This project will overcome these challenges by developing artif ....Punching holes in GaAs: a novel route to making artificial graphene and topological insulators. In the past seven years there has been an explosion of interest in materials such as graphene and topological insulators due to their unique electronic properties, culminating in the award of the 2010 Nobel Prize in Physics. However these materials face significant challenges that limit how we can manipulate them and use them in industry. This project will overcome these challenges by developing artificial graphene and topological insulators made using existing nanofabrication techniques on conventional semiconductors already used by industry. This will make it possible to study the unique electronic properties of these materials with unprecedented control, with the ultimate aim of using artificially designed electronic materials in industry.Read moreRead less
Electron transport in semiconductor nanowire devices - Setting two top nanoelectronics problems on the straight and narrow. This project will establish a new program to build electronic devices using tiny semiconductor nanowires. This project will contribute strongly to Australia's ongoing efforts in semiconductor nanotechnology and quantum information science, and allow Australia to play a leading role in the development of the next generation of electronics technologies.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE140100170
Funder
Australian Research Council
Funding Amount
$560,000.00
Summary
Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the elect ....Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the electrons and holes move inside a material or device. This project will create a new scanning gate microscope facility for imaging electrical current flow in advanced quantum devices and the new generation of topological insulators and atomically thin crystals such as graphene. The project will stimulate new studies of the next generation of electronic materials and devices, providing the underpinning knowledge for the future development of post silicon electronics.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE120100702
Funder
Australian Research Council
Funding Amount
$375,000.00
Summary
Single atom based quantum metrology. Taking advantage of the natural properties of a single atom embedded in an industrial nano-device, this project will improve the quantum standard for current and will lead to a more accurate determination of the fundamental constants of nature, thus providing broad benefits to Australian Science, Technology and Industry.
Hole Spintronics – making your spin last longer. Most electronic devices are powered by conventional transistors that use a 50-year-old technology. Spin-based electronics (spintronics) uses the electron’s spin instead of its charge to store, process and transfer information. Although half of all transistors on a chip use holes, almost all research has focused on electrons. However, holes have completely different spin properties than electrons, and are predicted to have significant advantages fo ....Hole Spintronics – making your spin last longer. Most electronic devices are powered by conventional transistors that use a 50-year-old technology. Spin-based electronics (spintronics) uses the electron’s spin instead of its charge to store, process and transfer information. Although half of all transistors on a chip use holes, almost all research has focused on electrons. However, holes have completely different spin properties than electrons, and are predicted to have significant advantages for spintronics. This project aims to develop new materials and techniques for making hole spin-based electronics, engineer long-lived hole spin states, and develop the knowledge that will underpin future spintronic devices for the semiconductor industry.Read moreRead less