A new in-situ structural measurement capability during nanoindentation. A new in-situ structural measurement capability during nanoindentation. This project aims to develop an in-situ Raman capability to obtain dynamic structural and mechanical behaviour of materials as a function of pressure during nanoindentation; and apply the new capability to directly monitor phase changes in silicon and germanium under pressure and correlate them with the simultaneous electrical responses. Anticipated outc ....A new in-situ structural measurement capability during nanoindentation. A new in-situ structural measurement capability during nanoindentation. This project aims to develop an in-situ Raman capability to obtain dynamic structural and mechanical behaviour of materials as a function of pressure during nanoindentation; and apply the new capability to directly monitor phase changes in silicon and germanium under pressure and correlate them with the simultaneous electrical responses. Anticipated outcomes are new instrumentation to directly probe the pressure-temperature phase diagram, and measure electrical properties of novel end phases in these semiconductors.Read moreRead less
Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconducto ....Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconductor interfaces; determining how ultra-shallow dopant profiles are affected by device structure and processing; and developing improved methods for measuring ultra-low contact resistivity. The research will be undertaken as a collaboration between researchers at the Australian National University and Applied Materials Ltd.Read moreRead less
An atom-scale fabrication technique for diamond quantum microprocessors. This project aims to develop an atomically-precise fabrication technique for the production of diamond quantum microprocessors through the pursuit of a novel bottom-up approach. This project expects to create significant new knowledge and capability in precision diamond growth, surface chemistry, electronics and characterisation, establish a long-term strategic partnership between Quantum Brilliance and the participating or ....An atom-scale fabrication technique for diamond quantum microprocessors. This project aims to develop an atomically-precise fabrication technique for the production of diamond quantum microprocessors through the pursuit of a novel bottom-up approach. This project expects to create significant new knowledge and capability in precision diamond growth, surface chemistry, electronics and characterisation, establish a long-term strategic partnership between Quantum Brilliance and the participating organisations, and enable the realisation of high-performance quantum microprocessors. These outcomes will potentially deliver Australia and Quantum Brilliance a profound advantage in quantum computing, thereby securing their positions in the emerging global quantum market and the associated economic and security benefits.Read moreRead less