Engineering nanomembranes for Long-term Implanted Flexible Electronics. This project aims to investigate the key technologies of inorganic semiconductor nanomembranes for long-lived bio-integrated electronics. Taking advantage of the well-established silicon carbide (SiC) synthesis and fabrication technology, the project expects to elucidate a new understanding of the SiC-on-polymer platform, establishing a foundational guideline for the development of chemically inert and mechanically flexible ....Engineering nanomembranes for Long-term Implanted Flexible Electronics. This project aims to investigate the key technologies of inorganic semiconductor nanomembranes for long-lived bio-integrated electronics. Taking advantage of the well-established silicon carbide (SiC) synthesis and fabrication technology, the project expects to elucidate a new understanding of the SiC-on-polymer platform, establishing a foundational guideline for the development of chemically inert and mechanically flexible devices. These findings will offer innovative solutions for daunting challenges in bio-integrated electronics, leveraging their safety, reliability, and long-term performance. The project expects to offer Australia cutting edge technologies and an impact profile in the fast-growing flexible bio-electronics market.Read moreRead less
Probe based nano-fabrication of micro-electronic and mechanical systems. Integrated circuits (ICs) are the ubiquitous core of today's computers, medical devices and mobile phones. Unfortunately, advanced ICs are becoming more costly and difficult to fabricate. This project proposes a new method that uses a tiny, intense spot of light to create low-cost ICs that are small, fast and will enable a vast range of new technologies.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE140100104
Funder
Australian Research Council
Funding Amount
$500,000.00
Summary
Collaborative facility for high resolution fabrication, imaging, and characterisation of nanostructured materials. Collaborative facility for high resolution fabrication, imaging, and characterisation of nanostructured materials: The development of the next generation of electronic, optical, and biomedical devices requires methods that can quickly manipulate and characterise matter at the nanoscale. This project will establish new tools that will allow researchers to build novel device structure ....Collaborative facility for high resolution fabrication, imaging, and characterisation of nanostructured materials. Collaborative facility for high resolution fabrication, imaging, and characterisation of nanostructured materials: The development of the next generation of electronic, optical, and biomedical devices requires methods that can quickly manipulate and characterise matter at the nanoscale. This project will establish new tools that will allow researchers to build novel device structures and analyse them at nanoscale spatial resolutions. The new facilities are required to meet the demands of a growing number of innovative projects being undertaken within a large multidisciplinary consortium of research groups. The facilities will be housed in state-of-the art laboratories and managed as open access resources for researchers which will enable advances in the areas of energy harvesting, environmental monitoring, and electronics.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE140100170
Funder
Australian Research Council
Funding Amount
$560,000.00
Summary
Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the elect ....Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the electrons and holes move inside a material or device. This project will create a new scanning gate microscope facility for imaging electrical current flow in advanced quantum devices and the new generation of topological insulators and atomically thin crystals such as graphene. The project will stimulate new studies of the next generation of electronic materials and devices, providing the underpinning knowledge for the future development of post silicon electronics.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE240100417
Funder
Australian Research Council
Funding Amount
$452,347.00
Summary
Light-emitting devices for next-generation optoelectronic applications. High-efficiency, multifunction light sources are essential in the new era of intelligent connectivity and hyper-automation for emerging applications in advanced display technologies (e.g., holographic/augmented reality displays), communication devices (e.g., 6th-generation (6G) telecommunication networks), and optical sensing (e.g., for self-driving vehicles & robotics). Realising such devices requires a paradigm shift in op ....Light-emitting devices for next-generation optoelectronic applications. High-efficiency, multifunction light sources are essential in the new era of intelligent connectivity and hyper-automation for emerging applications in advanced display technologies (e.g., holographic/augmented reality displays), communication devices (e.g., 6th-generation (6G) telecommunication networks), and optical sensing (e.g., for self-driving vehicles & robotics). Realising such devices requires a paradigm shift in optical technology beyond conventional optics. This project aims to develop new light-emitting device concepts that can deliver the technical requirements of these applications by tailoring advanced nanophotonic technologies and recent breakthroughs in advanced functional materials. Read moreRead less
Exploring electronic functionality in low-dimensional carbon and boron-nitride nanomaterials via advanced theoretical modelling. This project will spawn innovative carbon/boron nitride materials for next-generation electronics devices by devising new strategies to manipulate and control electronic structure as well as charge/spin transport properties. Outcomes will include technological breakthroughs leading to truly smaller, faster and smarter electronics materials.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE200100071
Funder
Australian Research Council
Funding Amount
$535,000.00
Summary
Photonic Chip Integration Facility. This project will create a Photonic Chip Integration Facility responding to newly emerging global trends towards low loss waveguides and wider coverage of the optical spectrum.
The tool will grow ultrahigh quality silicon nitride and oxide thin films in a manner that is compatible with electronics and other delicate materials, balancing flexibility for materials exploration with reliability and repeatability required for photonic chip systems research. The pr ....Photonic Chip Integration Facility. This project will create a Photonic Chip Integration Facility responding to newly emerging global trends towards low loss waveguides and wider coverage of the optical spectrum.
The tool will grow ultrahigh quality silicon nitride and oxide thin films in a manner that is compatible with electronics and other delicate materials, balancing flexibility for materials exploration with reliability and repeatability required for photonic chip systems research. The proposed facility will support Australian researchers from diverse disciplines spanning broadband networks, sensing, quantum technology, materials science, and beyond while providing a clear path for translating discoveries out of the lab towards scale up industrial manufacture
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Hole Spintronics – making your spin last longer. Most electronic devices are powered by conventional transistors that use a 50-year-old technology. Spin-based electronics (spintronics) uses the electron’s spin instead of its charge to store, process and transfer information. Although half of all transistors on a chip use holes, almost all research has focused on electrons. However, holes have completely different spin properties than electrons, and are predicted to have significant advantages fo ....Hole Spintronics – making your spin last longer. Most electronic devices are powered by conventional transistors that use a 50-year-old technology. Spin-based electronics (spintronics) uses the electron’s spin instead of its charge to store, process and transfer information. Although half of all transistors on a chip use holes, almost all research has focused on electrons. However, holes have completely different spin properties than electrons, and are predicted to have significant advantages for spintronics. This project aims to develop new materials and techniques for making hole spin-based electronics, engineer long-lived hole spin states, and develop the knowledge that will underpin future spintronic devices for the semiconductor industry.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE130100109
Funder
Australian Research Council
Funding Amount
$200,000.00
Summary
A multiscale electrochemical, magnetoelectric and electromechanical characterisation facility for advanced materials and devices. This infrastructure for advanced materials characterisation will boost Australia's capabilities in creating functional materials and nanostructured interfaces. It will yield new materials and functional interfaces with the best performance for applications in nanotechnology, communications, the environment and security.
Performance bottlenecks in ultra-scaled field-effect transistors. The comparison of commercial and atomically-precise devices will result in the long sought after atomistic metrology knowledge. Such knowledge is required to achieve a leap forward in device understanding and design in order to improve speed, reliability and energy consumption.