Synthesis, characterisation, and applications of atomically thin layers of transition metal oxides and dichalcogenides. The project will explore the key fundamental properties of atomically-thin layers of functional materials made of transition metal oxides and dichalcogenides. By reducing the thickness of these materials to only a few atomic layers, the project will create novel electronic properties that are otherwise not exhibited. The aims are to understand layer-dependent changes to their p ....Synthesis, characterisation, and applications of atomically thin layers of transition metal oxides and dichalcogenides. The project will explore the key fundamental properties of atomically-thin layers of functional materials made of transition metal oxides and dichalcogenides. By reducing the thickness of these materials to only a few atomic layers, the project will create novel electronic properties that are otherwise not exhibited. The aims are to understand layer-dependent changes to their physical and chemical properties; to control and tune such properties by altering crystal structure and composition; and to investigate the effect of mixed-layer heterostructure configurations on these characteristics. The fundamental insights gained will serve as the driver for the next generation nanotechnology-enabled electronics and sensing systems.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE150100909
Funder
Australian Research Council
Funding Amount
$360,000.00
Summary
Metal oxide memristors: Switching phenomena in van der Waals nanostructures. This project aims to integrate two recently researched phenomena: memristors (resistive memory) and planar materials. It aims to adopt atomically thin, planar materials for memristors enabling the realisation of high performance resistive memory devices. The physical and environmental effects that govern the memristive properties, which are of utmost importance in understanding resistive memory nature, will be investiga ....Metal oxide memristors: Switching phenomena in van der Waals nanostructures. This project aims to integrate two recently researched phenomena: memristors (resistive memory) and planar materials. It aims to adopt atomically thin, planar materials for memristors enabling the realisation of high performance resistive memory devices. The physical and environmental effects that govern the memristive properties, which are of utmost importance in understanding resistive memory nature, will be investigated. While generating breakthrough knowledge, the key outcomes of this project will lay the foundation for a novel class of memory devices based on planar van der Waals nanostructures. Such a breakthrough will contribute to the realisation of sustainable memristor technology.Read moreRead less
Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric mat ....Beyond the Ferroelectric Field Effect Transistors. The von Neumann paradigm is the foundation of modern computing systems, which are based on the data exchange between central processing unit (CPU) and memory. The physical separation between the CPU and memory will cause von Neumann bottleneck – a memory wall to limit the data processing speed for contextually intelligent applications. This project aims to develop a novel ferroelectric field effect transistor that integrates a ferroelectric material into a semiconductor transistor structure to merge logic and memory functionalities in a single-device level. This will solve the memory wall problem while provide low power, high speed, high density and long data retention time for future logic-in-memory and data centric computing paradigms.Read moreRead less
High performance metal oxide inks for printable memory arrays . This project aims to develop next generation printable memory devices with low cost and excellent stability. The goal will be achieved by developing a new class of metal oxide nanomaterials based inks and large scale printing technology, through optimizing the synthesis, printing process and electrode configuration. The expected outcomes will be new electronic materials for a wide range of end uses in flexible electronics, significa ....High performance metal oxide inks for printable memory arrays . This project aims to develop next generation printable memory devices with low cost and excellent stability. The goal will be achieved by developing a new class of metal oxide nanomaterials based inks and large scale printing technology, through optimizing the synthesis, printing process and electrode configuration. The expected outcomes will be new electronic materials for a wide range of end uses in flexible electronics, significant advances in energy efficient data storage devices, and commercialisation of the technology to Australian industries.Read moreRead less
Exploring piezoelectricity of two-dimensional nanocrystals and nanodevices. This project aims to study piezoelectricity in two-dimensional (2D) nanocrystals and nano-devices. This project expects to result in the formulation of new 2D piezoelectric, ferroelectric and multiferroic theory, syntheses of 2D crystals and exploration of their functionalities, which are directly implemented in innovative electronic and photonic components. This will contribute to the advancement of both new 2D multifun ....Exploring piezoelectricity of two-dimensional nanocrystals and nanodevices. This project aims to study piezoelectricity in two-dimensional (2D) nanocrystals and nano-devices. This project expects to result in the formulation of new 2D piezoelectric, ferroelectric and multiferroic theory, syntheses of 2D crystals and exploration of their functionalities, which are directly implemented in innovative electronic and photonic components. This will contribute to the advancement of both new 2D multifunctional materials and new nanodevice structures which may open up unprecedented opportunities for both scientific and technological endeavoursRead moreRead less
Dynamic substrates for surface-enhanced Raman scattering: piezoelectric actuated nanotextures with phase-locked signal processing. Surface-enhanced Raman scattering shows great promise for sensitive detection of a wide range of chemical and biological compounds. Novel electronic devices will be produced to actively tune the nanometre scale structures that generate the scattering signal, resulting in an improved fundamental understanding and control of the effect.
Exploring electronic functionality in low-dimensional carbon and boron-nitride nanomaterials via advanced theoretical modelling. This project will spawn innovative carbon/boron nitride materials for next-generation electronics devices by devising new strategies to manipulate and control electronic structure as well as charge/spin transport properties. Outcomes will include technological breakthroughs leading to truly smaller, faster and smarter electronics materials.
Ion-beam synthesis of functional oxides for next generation memory devices. This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitabl ....Ion-beam synthesis of functional oxides for next generation memory devices. This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitable for non-volatile memory applications. However, their electrical response depends critically on stoichiometry and this must be precisely engineered for optimal device performance. This project aims to develop next-generation memory devices as a replacement for current flash memory. The proposed technology uses resistance changes in functional-oxides to store information, and offers the potential for smaller and faster memory.Read moreRead less
Controlling the forming and switching characteristics of non-volatile resistive memory devices using ion-implantation. This project will develop new techniques for improving the reliability and endurance of a new class of non-volatile memory devices for use in portable electronics and embedded electronic systems. Such developments are essential for the development of next-generation devices.
Diamond glass: An all-carbon technology for neural networks and biosensing. This project aims to use plasma deposition to synthesise diamond glass with the highest purity and the most diamond-like character so that it meets the strict requirements for emerging device applications. The extreme properties of diamond glass arise from the diamond-like bonding of the majority of its atoms. This amorphous, wide bandgap semiconductor is also the hardest known glass. The maximum diamond-like content pos ....Diamond glass: An all-carbon technology for neural networks and biosensing. This project aims to use plasma deposition to synthesise diamond glass with the highest purity and the most diamond-like character so that it meets the strict requirements for emerging device applications. The extreme properties of diamond glass arise from the diamond-like bonding of the majority of its atoms. This amorphous, wide bandgap semiconductor is also the hardest known glass. The maximum diamond-like content possible in diamond glass coatings is unknown, so determining its ultimate performance is difficult. Expected applications include medical diagnostics, non-volatile memories and programmable chips.Read moreRead less