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Australian State/Territory : QLD
Field of Research : Manufacturing Engineering
Research Topic : efficiency
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  • Funded Activity

    ARC Future Fellowships - Grant ID: FT120100445

    Funder
    Australian Research Council
    Funding Amount
    $713,328.00
    Summary
    Hetero-epitaxial silicon carbide: enabling wide-band-gap semiconductors on silicon for greener technologies. In the next decade wide band gap materials will unlock vast potential for a capillary outreach of smart heterogeneous devices, improving energy efficiency and lessening our carbon footprint. This project will aim at major breakthroughs, enabling this pressing technological demand, and putting Australia at the leading edge of this revolution.
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    Active Funded Activity

    Discovery Projects - Grant ID: DP220103222

    Funder
    Australian Research Council
    Funding Amount
    $445,000.00
    Summary
    Ductile grinding mechanism and technology of brittle single crystals. This project aims to develop a fundamental understanding of the removal mechanics of emerging brittle single crystals under grinding-induced loading. A successful outcome will not only develop a new theoretical model for predicting the ductile removal regime of this class of difficult-to-machine materials, but their cost-effective ductile grinding processes will also be generated. It will address a longstanding bottleneck prod .... Ductile grinding mechanism and technology of brittle single crystals. This project aims to develop a fundamental understanding of the removal mechanics of emerging brittle single crystals under grinding-induced loading. A successful outcome will not only develop a new theoretical model for predicting the ductile removal regime of this class of difficult-to-machine materials, but their cost-effective ductile grinding processes will also be generated. It will address a longstanding bottleneck productivity issue in advanced manufacturing. The breakthrough technology developed in the project is expected to significantly benefit a number of industrial sectors for the fabrication of more affordable high-performance devices including mobile phones, light-emitting diodes, solar cells, sensors, and laser systems.
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    Active Funded Activity

    Discovery Projects - Grant ID: DP210102061

    Funder
    Australian Research Council
    Funding Amount
    $390,000.00
    Summary
    A new lapping process for difficult-to-machine brittle materials. This project aims to address a timely bottleneck issue in the conventional lapping of difficult-to-machine optoelectronic brittle materials. An innovative chemically enhanced lapping technology for fabricating such materials is expected to reduce machined subsurface damage. This is significant because it would shorten the subsequent finishing process and minimise the manufacturing cost. Intended outcomes from this project also inc .... A new lapping process for difficult-to-machine brittle materials. This project aims to address a timely bottleneck issue in the conventional lapping of difficult-to-machine optoelectronic brittle materials. An innovative chemically enhanced lapping technology for fabricating such materials is expected to reduce machined subsurface damage. This is significant because it would shorten the subsequent finishing process and minimise the manufacturing cost. Intended outcomes from this project also include an advanced machining theory and innovations in material removal characterisation. This breakthrough technology should benefit the design and fabrication of high performance electronic devices for energy, medicine and communication sectors with considerable impact on the Australian economy.
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    Funded Activity

    Discovery Projects - Grant ID: DP180103275

    Funder
    Australian Research Council
    Funding Amount
    $302,180.00
    Summary
    Developing machining technologies for single crystal gallium oxide. Gallium oxide is a new semiconductor material that can be used to make diodes and transistors with lower loss than silicon (Si), and power electronic devices with lower cost and better performance than silicon carbide (SiC) and gallium nitride (GaN). This project aims to understand the nature of deformation and removal of this unique class of materials during machining. A successful outcome will not only develop an enabling mach .... Developing machining technologies for single crystal gallium oxide. Gallium oxide is a new semiconductor material that can be used to make diodes and transistors with lower loss than silicon (Si), and power electronic devices with lower cost and better performance than silicon carbide (SiC) and gallium nitride (GaN). This project aims to understand the nature of deformation and removal of this unique class of materials during machining. A successful outcome will not only develop an enabling machining technology for this next generation power semiconductor, but new understanding of machining and materials science will be generated.
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