Novel 2-photon atom manipulation for ultra-nanoscale processing of diamond. There is intense interest in exploiting diamond's remarkable properties in many fields of science and technology, but fabricating and processing devices remains a major challenge. This project will build on previous work, using a recently discovered novel laser-induced surface phenomenon that enables, for the first time for any material, the exciting prospect of using light to manipulate surface atoms with atomic precis ....Novel 2-photon atom manipulation for ultra-nanoscale processing of diamond. There is intense interest in exploiting diamond's remarkable properties in many fields of science and technology, but fabricating and processing devices remains a major challenge. This project will build on previous work, using a recently discovered novel laser-induced surface phenomenon that enables, for the first time for any material, the exciting prospect of using light to manipulate surface atoms with atomic precision. This project aims to elucidate the mechanisms underpinning the optical interaction to reveal its full potential and use it to address key problems in diamond nano-device fabrication that lie beyond the reach of current techniques. It is expected that the outcomes will directly enhance Australia's current strengths in diamond-based quantum and photonic technologies.Read moreRead less
Atomistic anatomy of a nano transistor. The high-speed and low-power requirements of state-of-the-art transistors are met by material control that has reached an unprecedented level. The material in a nano-device has drastically different characteristics than in the bulk. To achieve this, the industry needs to implement strain, ultra sharp junctions, and well controlled potential profiles all on the nanometre scale. This project aims to develop a technique to directly measure these properties in ....Atomistic anatomy of a nano transistor. The high-speed and low-power requirements of state-of-the-art transistors are met by material control that has reached an unprecedented level. The material in a nano-device has drastically different characteristics than in the bulk. To achieve this, the industry needs to implement strain, ultra sharp junctions, and well controlled potential profiles all on the nanometre scale. This project aims to develop a technique to directly measure these properties in an actual device. Electrical and optical atom tomography will make it possible to map device parameters on the atomic scale. This atomistic anatomy has the potential to revolutionise the development of nanoscale devices and grow into a tool for a multi-billion dollar industry.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE150100151
Funder
Australian Research Council
Funding Amount
$760,000.00
Summary
Probe and engineer interactions in atomic-scale devices with a LT STM. A low-temperature scanning tunnelling microscope: The project aims to establish a facility to exploit the spectroscopic and spatial resolution of an ultra-low temperature scanning tunnelling microscope in conjunction with atomically controlled dopant engineering. In a variety of experiments the research team will explore ultra-scaled transistors, quantum information science devices, and engineered quantum matter. Improving ou ....Probe and engineer interactions in atomic-scale devices with a LT STM. A low-temperature scanning tunnelling microscope: The project aims to establish a facility to exploit the spectroscopic and spatial resolution of an ultra-low temperature scanning tunnelling microscope in conjunction with atomically controlled dopant engineering. In a variety of experiments the research team will explore ultra-scaled transistors, quantum information science devices, and engineered quantum matter. Improving our ability to investigate semiconductor materials at the atomic scale impacts fields ranging from electronics, telecommunication, quantum information to renewable energy research and puts Australia at the forefront of the field of controlled atomic systems in semiconductors.Read moreRead less