Oxide-semiconductor epitaxy: towards next generation nanoelectronics. This project aims to integrate high quality functional oxide heterostructures with semiconductor platforms and address the fundamental obstacles in oxides for highly efficient and high-speed transistor applications by engineering their electronic band structures. The project aims to establish a bridge between the diverse electronic properties of oxides and the established semiconductor platform, and generate new devices and fu ....Oxide-semiconductor epitaxy: towards next generation nanoelectronics. This project aims to integrate high quality functional oxide heterostructures with semiconductor platforms and address the fundamental obstacles in oxides for highly efficient and high-speed transistor applications by engineering their electronic band structures. The project aims to establish a bridge between the diverse electronic properties of oxides and the established semiconductor platform, and generate new devices and functionalities. Expected outcomes include epitaxial functional oxides on Gallium arsenide with ultrahigh, room-temperature sheet electron mobility and a comprehensive understanding of its microscopic origin. This will fundamentally change the route toward novel transistors based on high speed and low energy oxide electronics.Read moreRead less