Advanced lanthanide-doped nanomaterials for new-generation security inks. Current security labelling technologies using pattern coding (“barcoding”) and/or UV-excited phosphorescent inks are relatively easily counterfeited. The project aims to identify optimal design, fabrication and surface treatment of infrared-excited lanthanide nanoparticles for use as pigments in UV-curable polymer inks. This is expected to result in a new-generation of jet-printable security inks with ultimate capability f ....Advanced lanthanide-doped nanomaterials for new-generation security inks. Current security labelling technologies using pattern coding (“barcoding”) and/or UV-excited phosphorescent inks are relatively easily counterfeited. The project aims to identify optimal design, fabrication and surface treatment of infrared-excited lanthanide nanoparticles for use as pigments in UV-curable polymer inks. This is expected to result in a new-generation of jet-printable security inks with ultimate capability for multidimensional coding (using multiple luminescence wavelengths and lifetimes) and robust readability. Expected outcomes are world leadership in codable inks for secure labelling against counterfeiting, greatly enhancing both global ink-product sales and the value of Australian exports subject to product substitution.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE200100003
Funder
Australian Research Council
Funding Amount
$400,000.00
Summary
3D Nanofabrication and Nanocharacterisation facility. This project aims to establish a revolutionary nanoscale fabrication and characterisation facility in Australia. The facility is an angle-based nanoscale etching system with integrated chemical analysis capabilities and will be the first instrument of its kind in Australia. The facility will enable unprecedented fabrication and characterisation of 3D nanostructures and new device geometries from semiconductors, oxides and metals that underpin ....3D Nanofabrication and Nanocharacterisation facility. This project aims to establish a revolutionary nanoscale fabrication and characterisation facility in Australia. The facility is an angle-based nanoscale etching system with integrated chemical analysis capabilities and will be the first instrument of its kind in Australia. The facility will enable unprecedented fabrication and characterisation of 3D nanostructures and new device geometries from semiconductors, oxides and metals that underpin modern nanoelectronics for innovative energy, nano-optical and quantum device applications. This unique equipment will facilitate breakthrough discoveries in nanomaterials, and foster collaborations amongst Australian researchers to accelerate industry in advanced nanodevice technologies.Read moreRead less
van der Waals epitaxy for advanced and flexible optoelectronics. This project aims to investigate the growth of compound semiconductors directly on two-dimensional material templates, via the so-called van der Waals epitaxy. Two-dimensional materials combined with compound semiconductors as optoelectronic materials can have many uses. This project expects to design flexible solar cells, which could be integrated with fabrics or building products, and lasers that need small drive currents. It wil ....van der Waals epitaxy for advanced and flexible optoelectronics. This project aims to investigate the growth of compound semiconductors directly on two-dimensional material templates, via the so-called van der Waals epitaxy. Two-dimensional materials combined with compound semiconductors as optoelectronic materials can have many uses. This project expects to design flexible solar cells, which could be integrated with fabrics or building products, and lasers that need small drive currents. It will use the Anderson localisation effect, a photon management concept, to control the interaction between photons and material and improve device efficiencies.Read moreRead less
Selective area nano-epitaxy. A new major program will be initiated to investigate the epitaxial growth of certain semiconductor nanowires on patterned substrates, without the use of a catalyst. It will result in the ability to produce nanowires of high quality and uniformity. This will lead the way for new and advanced concept nanowire-based devices for future applications.
Antimonide-based nanowires for infra-red and energy applications. This project will investigate and to understand the fundamental growth mechanisms of antimonide-based semiconductor nanowires. It will result in the ability to produce nanowires of high quality and uniformity for applications in infra-red technologies such as photodetectors and solar cells.
Hexagonal boron nitride for deep ultraviolet device applications. This project plans to investigate the growth of an alternative material, hexagonal boron nitride, for use in high performance deep-ultraviolet (UV) light-emitting diodes (LEDs). Deep-UV LEDs are robust and highly portable devices that replace traditional mercury/deuterium-based UV sources, and have applications in water or air sterilisation, photo-dermal therapy, covert communication and bio-chemical agent identification. However, ....Hexagonal boron nitride for deep ultraviolet device applications. This project plans to investigate the growth of an alternative material, hexagonal boron nitride, for use in high performance deep-ultraviolet (UV) light-emitting diodes (LEDs). Deep-UV LEDs are robust and highly portable devices that replace traditional mercury/deuterium-based UV sources, and have applications in water or air sterilisation, photo-dermal therapy, covert communication and bio-chemical agent identification. However, despite major worldwide effort in the development of aluminium gallium nitride deep-UV LEDs, their efficiency is still extremely low. Understanding the fundamental growth, doping and alloying mechanisms of hexagonal boron nitride will allow us to engineer its properties and create high-efficiency devices.Read moreRead less
Ternary and quaternary III-V semiconductor nanowires and related quantum structures for optoelectronics applications. Growth of ternary and quaternary III-V compound semiconductor nanowires will open up the opportunity to develop high performance electronic and photonic devices. These nanowire devices underpin next generation electronics and photonics development potentially leading to innovative Australian technologies and industries.
Epitaxial growth of III-V microring lasers for integrated silicon photonics. This project aims to investigate the growth and demonstration of compound semiconductor microring lasers on silicon substrates, using selective area growth to engineer the shape of the lasing cavity at the nano/micro-scale. Silicon photonics is currently a dominant technology in optical and data communication systems, and the continued development demands higher speeds, lower power consumption and lower costs. However, ....Epitaxial growth of III-V microring lasers for integrated silicon photonics. This project aims to investigate the growth and demonstration of compound semiconductor microring lasers on silicon substrates, using selective area growth to engineer the shape of the lasing cavity at the nano/micro-scale. Silicon photonics is currently a dominant technology in optical and data communication systems, and the continued development demands higher speeds, lower power consumption and lower costs. However, on-chip integrated, high efficiency lasers are still elusive due to mismatch in material platforms between the lasers and silicon substrates. This project will produce reliable, efficient and easily manufacturable laser sources integrated on silicon photonic chips. It is also expected to pave the way for more development of this technology by the industry to further drive the cost of silicon photonics technology down whilst increasing data transmission speed.Read moreRead less
Electrically-driven semiconductor nanowire lasers. This project aims to investigate the concepts and strategies required to produce electrically injected semiconductor nanowire lasers. The project will achieve this by understanding light interaction in nanowires, designing appropriate structures to inject current and engineer optical profile and developing nano-fabrication technologies to make them. Electrically operated nanowire lasers would enable practical applications such as on-chip integra ....Electrically-driven semiconductor nanowire lasers. This project aims to investigate the concepts and strategies required to produce electrically injected semiconductor nanowire lasers. The project will achieve this by understanding light interaction in nanowires, designing appropriate structures to inject current and engineer optical profile and developing nano-fabrication technologies to make them. Electrically operated nanowire lasers would enable practical applications such as on-chip integrated optical systems and ultra-sensitive miniature sensors. The project is expected to pave the way for further development of this technology.Read moreRead less
Nitride nanowires for advanced optoelectronic and energy applications. Group III-nitride semiconductor devices, which are currently in widespread use in white, blue and green LEDs, and Bluray lasers, have a multi-billion dollar market. This project aims to address and improve the issues and challenges which still limit the true potential of these materials, by tailoring them at the nanoscale. Understanding the fundamental growth mechanisms of these nanowires and their structural, optical and ele ....Nitride nanowires for advanced optoelectronic and energy applications. Group III-nitride semiconductor devices, which are currently in widespread use in white, blue and green LEDs, and Bluray lasers, have a multi-billion dollar market. This project aims to address and improve the issues and challenges which still limit the true potential of these materials, by tailoring them at the nanoscale. Understanding the fundamental growth mechanisms of these nanowires and their structural, optical and electrical properties will allow precise and controllable synthesis of the nanowires to specific requirements. This will further allow demonstration of high efficiency UV LEDs, compact green/yellow lasers, nanowire solar cells and photoelectrodes for hydrogen generation from splitting water.Read moreRead less