Towards phase, composition and homogeneity control in ternary nanowires. Semiconductor nanowires have enormous potential for large scale industry manufacturing as each individual nanowire represents one device. The aim of this project is the catalyst-free growth of ternary nanowires with control over structure, composition and homogeneity within the wire. Detailed electron microscopy analyses are essential to reconstruct a three-dimensional view of the nanowires and understand the growth mechani ....Towards phase, composition and homogeneity control in ternary nanowires. Semiconductor nanowires have enormous potential for large scale industry manufacturing as each individual nanowire represents one device. The aim of this project is the catalyst-free growth of ternary nanowires with control over structure, composition and homogeneity within the wire. Detailed electron microscopy analyses are essential to reconstruct a three-dimensional view of the nanowires and understand the growth mechanism at work. These structural characteristics determine the optical properties. It is expected that precise control over growth will allow the emission wavelength of the nanowires to be tuned and allow their use in optoelectronic device structures. Two innovative techniques are proposed using strain and patterned substrates for ternary nanowire growth.Read moreRead less
Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconducto ....Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconductor interfaces; determining how ultra-shallow dopant profiles are affected by device structure and processing; and developing improved methods for measuring ultra-low contact resistivity. The research will be undertaken as a collaboration between researchers at the Australian National University and Applied Materials Ltd.Read moreRead less