Special Research Initiatives - Grant ID: SR0354735
Funder
Australian Research Council
Funding Amount
$10,000.00
Summary
Australian Network on Microelectronics, Optoelectronics and Microelectromechanical Systems. The Network will encompass semiconductor microelectronics, optoelectronics, sensors and microelectromechanical systems (MEMS). Fundamental research in these areas enables the technological advances that underpin rapidly developing industries such as information and telecommunications technologies, defence, aerospace, medicine, and remote sensing. Exciting challenges exist in designing new devices that exp ....Australian Network on Microelectronics, Optoelectronics and Microelectromechanical Systems. The Network will encompass semiconductor microelectronics, optoelectronics, sensors and microelectromechanical systems (MEMS). Fundamental research in these areas enables the technological advances that underpin rapidly developing industries such as information and telecommunications technologies, defence, aerospace, medicine, and remote sensing. Exciting challenges exist in designing new devices that exploit unique semiconductor systems and technologies. By sharing capabilities and resources (both capital and human), the network will enable the issues associated with such novel materials and devices to be addressed in a targeted manner. The network will also guarantee the ongoing future of research in the area by actively involving early career researchers and postgraduate students.Read moreRead less
Investigation of vertical magneto-transport in infrared detector structures based on InAs/GaSb type-II superlattices. Infrared sensors and systems are finding increasing use in Australia's core industries: particularly defence, mineral exploration, environmental monitoring, precision agriculture, homeland security, and medical diagnostics. Due to the reduced cooling requirements, the Infrared detector structures to be investigated in this project have the potential to deliver high performance in ....Investigation of vertical magneto-transport in infrared detector structures based on InAs/GaSb type-II superlattices. Infrared sensors and systems are finding increasing use in Australia's core industries: particularly defence, mineral exploration, environmental monitoring, precision agriculture, homeland security, and medical diagnostics. Due to the reduced cooling requirements, the Infrared detector structures to be investigated in this project have the potential to deliver high performance infrared technology at a significantly lower cost and, hence, widening its applications. The new science proposed in this project, and new technological knowledge expected from its application, will allow Australian researchers to participate and significantly contribute to the international effort in this field and to exploit any developed intellectual property. Read moreRead less
Charge and Interface Properties of Novel Gallium Nitride Transistor Structures for Application in Low-Noise High-Frequency Electronics. Gallium Nitride (GaN)-based transistors offer a unique opportunity to simultaneously achieve both high power and low noise from amplifiers. This project aims to improve material and device design of GaN-based transistors. It comprises a systematic comparison of charge and interface properties with power and noise performance measurements of high electron mobilit ....Charge and Interface Properties of Novel Gallium Nitride Transistor Structures for Application in Low-Noise High-Frequency Electronics. Gallium Nitride (GaN)-based transistors offer a unique opportunity to simultaneously achieve both high power and low noise from amplifiers. This project aims to improve material and device design of GaN-based transistors. It comprises a systematic comparison of charge and interface properties with power and noise performance measurements of high electron mobility transistors grown using a broad variety of novel growth, processing and device innovations. The expected outcome of the program includes key advances in the areas of GaN materials growth, device processing and passivation technology, which will ultimately lead to breakthrough performance in ultra-low-noise electronics for high frequency systems.Read moreRead less
Ion implantation doping of gallium nitride for high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. Gallium nitride technology is also of high interest to defence organis ....Ion implantation doping of gallium nitride for high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. Gallium nitride technology is also of high interest to defence organisations, as radar and satellite-communications links, which operate at frequencies ranging from hundreds of MHz to tens of GHz, often have high power-amplification requirements. The project therefore also falls within the priority goal of Transformational Defence Technologies.Read moreRead less
A comprehensive approach to development and understanding of III-nitride-based high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. III-nitride (GaN, AlN, InN and alloys) ....A comprehensive approach to development and understanding of III-nitride-based high performance electronic devices. This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. III-nitride (GaN, AlN, InN and alloys) technology is also of high interest to defence organisations, as radar and satellite-communications links, which operate at frequencies ranging from hundreds of MHz to tens of GHz, often have high power-amplification requirements. The project therefore also falls within the priority goal of Transformational Defence Technologies.Read moreRead less