Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0560959
Funder
Australian Research Council
Funding Amount
$165,000.00
Summary
The Macquarie National Low Temperature Optoelectronic Thin Film Growth Facility. Funding is requested for an Australian facility for the growth of nitride and oxide thin films with in-situ optical analysis equipment for the monitoring of growth parameters. It is envisaged that this facility would be for the development of materials and device structures for photonic, electronic and optoelectronic applications. The facility will also provide a leading Australian source of these materials for fund ....The Macquarie National Low Temperature Optoelectronic Thin Film Growth Facility. Funding is requested for an Australian facility for the growth of nitride and oxide thin films with in-situ optical analysis equipment for the monitoring of growth parameters. It is envisaged that this facility would be for the development of materials and device structures for photonic, electronic and optoelectronic applications. The facility will also provide a leading Australian source of these materials for fundamental material studies utilising nuclear analysis and implantation technologies, high resolution X-ray diffraction, high spatial resolution micro-cathodoluminescence and other forms of analysis. Ex-situ optical analysis equipment is also requested for post-growth evaluation to compliment and evaluate the in-situ analysis.Read moreRead less
Tailoring superconducting hybrid multilayered film systems for electric and electronic applications. This project focuses on the development of new scientific and technological aspects of the fabrication, properties and operation of novel hybrid systems for revolutionizing electricity handling and electronics. It will also solve some existing problems of film structures with promising multilayer technology. Hybrid systems, often make the headlines in science and are gaining an increasingly promi ....Tailoring superconducting hybrid multilayered film systems for electric and electronic applications. This project focuses on the development of new scientific and technological aspects of the fabrication, properties and operation of novel hybrid systems for revolutionizing electricity handling and electronics. It will also solve some existing problems of film structures with promising multilayer technology. Hybrid systems, often make the headlines in science and are gaining an increasingly promising outlook in materials engineering, nanotechnology and electronics, promising eventual application in a broad range of industries. This project will establish Australia's capability at the forefront in this area. The outcomes predicted will benefit existing Australian companies and may establish new companies dealing with these hybrid systems.Read moreRead less
A novel maskless process for patterning and doping of silicon. The outcomes of this research will have consequences for the semiconductor industry by providing the potential for a completely new process tool for patterning and doping in device and circuit fabrication. The technology is also applicable as a simple and inexpensive way to 'write' conducting and insulating regions in silicon and may thus be applicable for smart cards and small industry. Successful implementation of the research will ....A novel maskless process for patterning and doping of silicon. The outcomes of this research will have consequences for the semiconductor industry by providing the potential for a completely new process tool for patterning and doping in device and circuit fabrication. The technology is also applicable as a simple and inexpensive way to 'write' conducting and insulating regions in silicon and may thus be applicable for smart cards and small industry. Successful implementation of the research will raise Australia's international profile in this area. This work will be particularly beneficial to a new high-tech Australian company, WRiota, which specializes in device technology based in nanoindentation of silicon.Read moreRead less
A novel approach to direct nanopatterning of silicon for advanced phase-changed devices. This project will exploit key research developments at ANU in the field of nanotechnology, specifically nanofabrication of entirely new devices. In particular, this work will be exploited by a new Australian high-tech company, WRiota, to produce novel silicon phase change devices. The instrumentation developments will be commercialized by a leading nanoindentation company and the materials and device-related ....A novel approach to direct nanopatterning of silicon for advanced phase-changed devices. This project will exploit key research developments at ANU in the field of nanotechnology, specifically nanofabrication of entirely new devices. In particular, this work will be exploited by a new Australian high-tech company, WRiota, to produce novel silicon phase change devices. The instrumentation developments will be commercialized by a leading nanoindentation company and the materials and device-related outcomes and IP will be retained and used by WRiota. This project will further provide valuable opportunities for a number of research students and ECRs to gain experience in both the industrial and academic worlds.Read moreRead less
Ion implantation processing in Silicon Carbide for microelectronic applications. The aim of this project is to study the application of ion implantation to silicon carbide for dopant incorporation and defect engineering. The successful dopant incorporation, especially p-type doping will be crucial for SiC high power and high frequency devices. The outcomes of the project are (a) the understanding of extended and point defect formation in silicon carbide from ion implantation. (b) detailed charac ....Ion implantation processing in Silicon Carbide for microelectronic applications. The aim of this project is to study the application of ion implantation to silicon carbide for dopant incorporation and defect engineering. The successful dopant incorporation, especially p-type doping will be crucial for SiC high power and high frequency devices. The outcomes of the project are (a) the understanding of extended and point defect formation in silicon carbide from ion implantation. (b) detailed characterisation of the extended defects formed by ion implantation (c) establishment of dose regimes for point defects and extended defect formation and (d) development of procedures for the incorporation of dopants with minimum residual defect formation.Read moreRead less
Selective Area Growth of Semiconductor Quantum Dots for Optoelectronic Applications. This project is aimed at developing semiconductor nanotechnology for the next generation optoelectronic devices. It involves the study of epitaxial growth of semiconductor quantum dots by metal-organic-chemical-vapour-deposition on patterned substrates and the characterisation of these nano-dimensional structures. These nano-structures would be used to fabricate optoelectronic devices such as single-photon sourc ....Selective Area Growth of Semiconductor Quantum Dots for Optoelectronic Applications. This project is aimed at developing semiconductor nanotechnology for the next generation optoelectronic devices. It involves the study of epitaxial growth of semiconductor quantum dots by metal-organic-chemical-vapour-deposition on patterned substrates and the characterisation of these nano-dimensional structures. These nano-structures would be used to fabricate optoelectronic devices such as single-photon sources and optoelectronic integrated circuits.Read moreRead less
New approach to control grain boundary behaviour in superconducting thin films. This project aims at finding a new approach to overcome the cornerstone problem of high temperature superconducting films through new design, magnetic interactions, and real-time magnetic flux visualisation at the quantum level. The expected ultimate achievement would be to develop new technologies, delivering the best performance of the films.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE110100127
Funder
Australian Research Council
Funding Amount
$250,000.00
Summary
Hall effect system for detailed electrical characterisation in semiconductors. Semiconductor characterisation is crucial for research and development in optimum growth and fabrication procedures. This Hall effect measurement system is an essential carrier characterisation technique for semiconductors with potential applications in microelectronics, optoelectronics and photovoltaics.