Understanding molecular negative ion production for use in pathology. The project aims to increase the yield of molecular negative ion sources by improving our understanding of the formation of ion beams from plasma sources and expand our knowledge of molecular negative ion generation in plasma environments leading to brighter ion beams. For example, understanding cancer requires cellular level tools to map how cells are changing. These maps are made using ion beams which are scanned across cell ....Understanding molecular negative ion production for use in pathology. The project aims to increase the yield of molecular negative ion sources by improving our understanding of the formation of ion beams from plasma sources and expand our knowledge of molecular negative ion generation in plasma environments leading to brighter ion beams. For example, understanding cancer requires cellular level tools to map how cells are changing. These maps are made using ion beams which are scanned across cells to remove material that is analysed at the atomic and molecular level. Ion beams are produced from plasma sources, but much of their operation is not understood. Such improved ion beams are expected to enable inexpensive and fast cellular level pathology at even small hospitals to tackle cancer for society’s benefit.Read moreRead less
Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconducto ....Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconductor interfaces; determining how ultra-shallow dopant profiles are affected by device structure and processing; and developing improved methods for measuring ultra-low contact resistivity. The research will be undertaken as a collaboration between researchers at the Australian National University and Applied Materials Ltd.Read moreRead less