Theoretical and Numerical Analyses on Smart-Cut Technology. Smart-cut is an innovative and effective technique for fabricating high quality silicon-on-insulator structures which are widely used in the semiconductor and microelectronics industries. The quantification of the effects of processing parameters and the optimization of smart-cut process will be conducted in this project. The results are expected to make significant contributions to reducing cost, increasing efficiency and optimizing pr ....Theoretical and Numerical Analyses on Smart-Cut Technology. Smart-cut is an innovative and effective technique for fabricating high quality silicon-on-insulator structures which are widely used in the semiconductor and microelectronics industries. The quantification of the effects of processing parameters and the optimization of smart-cut process will be conducted in this project. The results are expected to make significant contributions to reducing cost, increasing efficiency and optimizing procedure by providing a theoretical and quantitative design methodology to improve the smart-cut technique. Consequently, the outcomes and results of the project will bring many benefits to and encourage further R&D in the semiconductor and microelectronics industries in Australia.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE0238960
Funder
Australian Research Council
Funding Amount
$940,000.00
Summary
High Performance Semiconductor Micromachining Facility. The purpose of this project is to make available to the Australian semiconductor research community a facility to undertake specialist deposition and etching tasks needed for fabrication of next generation solar cells, microelectronics, optronics, and micro-electromechanical systems. The facility will have the flexibility to allow independent control of major process parameters, allowing development of new fabrication technologies which wi ....High Performance Semiconductor Micromachining Facility. The purpose of this project is to make available to the Australian semiconductor research community a facility to undertake specialist deposition and etching tasks needed for fabrication of next generation solar cells, microelectronics, optronics, and micro-electromechanical systems. The facility will have the flexibility to allow independent control of major process parameters, allowing development of new fabrication technologies which will be generic to a wide range of semiconductor materials. In particular, the facility will be unique in its ability to perform processes at low temperatures, and under conditions that allow optimisation of the deposition and etching processes, without compromising the performance of delicate devices or exceeding the maximum process temperature limitations found in many mainstream semiconductor materials technologies.Read moreRead less
A novel maskless process for patterning and doping of silicon. The outcomes of this research will have consequences for the semiconductor industry by providing the potential for a completely new process tool for patterning and doping in device and circuit fabrication. The technology is also applicable as a simple and inexpensive way to 'write' conducting and insulating regions in silicon and may thus be applicable for smart cards and small industry. Successful implementation of the research will ....A novel maskless process for patterning and doping of silicon. The outcomes of this research will have consequences for the semiconductor industry by providing the potential for a completely new process tool for patterning and doping in device and circuit fabrication. The technology is also applicable as a simple and inexpensive way to 'write' conducting and insulating regions in silicon and may thus be applicable for smart cards and small industry. Successful implementation of the research will raise Australia's international profile in this area. This work will be particularly beneficial to a new high-tech Australian company, WRiota, which specializes in device technology based in nanoindentation of silicon.Read moreRead less