Dual wavelength quantum dot light detectors. This project aims to develop technologies to fabricate advanced electronic materials based on gallium antimonide (GaSb), to explore their physics and use them in improved optoelectronic devices.
GaSb technology is in its infancy, therefore basic and applied research is needed to utilise these materials to their full potential for long wavelength photonic devices with unique promise in military and civilian applications: fire detection, missile and ....Dual wavelength quantum dot light detectors. This project aims to develop technologies to fabricate advanced electronic materials based on gallium antimonide (GaSb), to explore their physics and use them in improved optoelectronic devices.
GaSb technology is in its infancy, therefore basic and applied research is needed to utilise these materials to their full potential for long wavelength photonic devices with unique promise in military and civilian applications: fire detection, missile and surveillance systems, environmental monitoring, biology and medicine.
As an outcome, growth protocols for innovative device structures will be established, the structures' behaviour assessed and device fabrication and characterisation carried out and reported.
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Optoelectronic properties of low-dimensional semiconductor systems and semiconductor nanostructures under terahertz free-electron laser radiation. The recent application of terahertz (THz) free-electron lasers (FELs) to scientific investigation into low-dimensional semiconductor systems and semiconductor nanostructures has opened up a new field of research in semiconductor optoelectronics. This project will conduct a joint experimental and theoretical study of how these novel systems interact w ....Optoelectronic properties of low-dimensional semiconductor systems and semiconductor nanostructures under terahertz free-electron laser radiation. The recent application of terahertz (THz) free-electron lasers (FELs) to scientific investigation into low-dimensional semiconductor systems and semiconductor nanostructures has opened up a new field of research in semiconductor optoelectronics. This project will conduct a joint experimental and theoretical study of how these novel systems interact with intense THz laser fields. Experimentally, we plan to use Beijing FELs in China to study optoelectronic properties in GaAs-and GaN based systems. Theoretically, we intend developing fundamental new approaches to theory of electron interactions with intense laser fields in semiconductors and relating theoretical results to experiments and experimental findings.Read moreRead less
Ordered Semiconductor Nanostructures for Electronics and Photonics Applications. This research program aims to develop innovative concepts and technologies to manipulate atoms to control size, shape and position of nanostructures in order to control their electronic and optical properties. The research program will produce important innovations and advance Australian knowledge in electronics, photonics, communications and computer technologies. This research will allow Australia to become a si ....Ordered Semiconductor Nanostructures for Electronics and Photonics Applications. This research program aims to develop innovative concepts and technologies to manipulate atoms to control size, shape and position of nanostructures in order to control their electronic and optical properties. The research program will produce important innovations and advance Australian knowledge in electronics, photonics, communications and computer technologies. This research will allow Australia to become a significant player in nanotechnology and has the potential for the development of patentable technologies of immense interest for high technology industries.Read moreRead less