Linkage Infrastructure, Equipment And Facilities - Grant ID: LE180100190
Funder
Australian Research Council
Funding Amount
$205,000.00
Summary
High through-put facility for measurement of quantum materials and devices. This projects aims to accelerate the development of quantum technologies by expanding our capacity to rapidly evaluate the low temperature electrical and optical properties of novel materials and devices. The project expects to generate new knowledge in quantum coherent phases of diamond, high mobility two-dimensional spintronics, hybrid semiconductor-superconductor devices, novel phases of silicon and germanium, and sin ....High through-put facility for measurement of quantum materials and devices. This projects aims to accelerate the development of quantum technologies by expanding our capacity to rapidly evaluate the low temperature electrical and optical properties of novel materials and devices. The project expects to generate new knowledge in quantum coherent phases of diamond, high mobility two-dimensional spintronics, hybrid semiconductor-superconductor devices, novel phases of silicon and germanium, and single photon sources based on silicon-carbide. Expected outcomes of the project include the establishment of high performing, efficient, new facilities for low temperature quantum measurement, the strengthening of collaborative links between participating researchers and the expansion of opportunities for research students.Read moreRead less
Surface doping of diamond: A new platform for 2D carbon-based spintronics. This project aims to develop the hydrogen-terminated surface of diamond as a new semiconducting platform for carbon-based spintronics. It will build upon recent experimental advances that have shown diamond to possess a two-dimensional (2D) hole-based system with strong spin-orbit coupling. As a semiconductor with unique spin properties, surface conducting diamond offers considerable advantages over other 2D materials su ....Surface doping of diamond: A new platform for 2D carbon-based spintronics. This project aims to develop the hydrogen-terminated surface of diamond as a new semiconducting platform for carbon-based spintronics. It will build upon recent experimental advances that have shown diamond to possess a two-dimensional (2D) hole-based system with strong spin-orbit coupling. As a semiconductor with unique spin properties, surface conducting diamond offers considerable advantages over other 2D materials such as graphene and topological insulators. These unique properties will be exploited to realise novel semiconductor device architectures for the manipulation of spin using electric fields, and for the study of new spin transport phenomena and quasiparticle excitations at semiconductor-superconductor interfaces.Read moreRead less
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE140100170
Funder
Australian Research Council
Funding Amount
$560,000.00
Summary
Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the elect ....Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials. Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the electrons and holes move inside a material or device. This project will create a new scanning gate microscope facility for imaging electrical current flow in advanced quantum devices and the new generation of topological insulators and atomically thin crystals such as graphene. The project will stimulate new studies of the next generation of electronic materials and devices, providing the underpinning knowledge for the future development of post silicon electronics.Read moreRead less
Synthesis of enriched silicon for long-lived donor quantum states. We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the deple ....Synthesis of enriched silicon for long-lived donor quantum states. We have discovered a method to make silicon highly enriched in the desirable spin-zero isotope using readily available ion implantation tools. This “semiconductor vacuum” is essential for building future quantum computer devices using the quantum spin of millions of implanted atoms with revolutionary capabilities. We have demonstrated long-lived implanted donor atom quantum states in prototype material, made possible by the depletion of background spins in natural silicon and now aim to push the enrichment to greater extremes. We will integrate the extreme material into functional devices that use electrically detected electron spin resonance to probe exceptionally durable quantum states and open a near-term pathway to large-scale devices.Read moreRead less
Tuning electronic and optical properties in twisted 2D semiconductors. This project aims to build and characterise a family of novel electronic materials: layers of atomically thin semiconductors stacked with a twist, to realise new electronic phases and new low-energy electronic devices. The project adopts an interdisciplinary approach combining advanced experimental and theoretical techniques. The expected outcomes will be a detailed understanding of the electronic and optical properties of tw ....Tuning electronic and optical properties in twisted 2D semiconductors. This project aims to build and characterise a family of novel electronic materials: layers of atomically thin semiconductors stacked with a twist, to realise new electronic phases and new low-energy electronic devices. The project adopts an interdisciplinary approach combining advanced experimental and theoretical techniques. The expected outcomes will be a detailed understanding of the electronic and optical properties of twisted semiconductor superlattices, such that they can be produced with desired properties on demand. The benefits of the project will be new materials for electronics and optoelectronics applications, new links to international organisations, and training of students and postdocs for careers in nanoelectronics. Read moreRead less
Enabling diamond nanoelectronics with metal oxide induced surface doping. This project aims to use diamond for radio frequency power electronics. This builds on the investigator’s success in controlling diamond surface conductivity using transition metal oxides. Diamond is highly desirable for building high-power, high-frequency electronic devices, particularly for use in electrical power control/conversion and telecommunication. The lack of effective and stable doping methods has impeded the re ....Enabling diamond nanoelectronics with metal oxide induced surface doping. This project aims to use diamond for radio frequency power electronics. This builds on the investigator’s success in controlling diamond surface conductivity using transition metal oxides. Diamond is highly desirable for building high-power, high-frequency electronic devices, particularly for use in electrical power control/conversion and telecommunication. The lack of effective and stable doping methods has impeded the realisation of this prospect. This project expects the high performance and technically viable device technologies will enable diamond electronic devices for applications in telecommunications, radars and the next-generation electricity grid.Read moreRead less
Discovery Early Career Researcher Award - Grant ID: DE160101334
Funder
Australian Research Council
Funding Amount
$373,536.00
Summary
Atomic Engineering of Molybdenum Disulfide for Ultra-Scaled Electronics. This project aims to explore novel approaches to device fabrication and functionality by atomic-level engineering of next generation electronic materials. As transistors shrink towards the atomic scale, conventional fabrication methods fail and device behaviour is altered by emerging quantum effects. Atomically thin two-dimensional (2D) crystals are emerging as next-generation electronic materials in nanoelectronics. Howeve ....Atomic Engineering of Molybdenum Disulfide for Ultra-Scaled Electronics. This project aims to explore novel approaches to device fabrication and functionality by atomic-level engineering of next generation electronic materials. As transistors shrink towards the atomic scale, conventional fabrication methods fail and device behaviour is altered by emerging quantum effects. Atomically thin two-dimensional (2D) crystals are emerging as next-generation electronic materials in nanoelectronics. However, no reliable fabrication techniques currently exist at the targeted sub-10-nanometre scale and basic scientific investigation of the operation of these ultimately small devices is needed. The project plans to use innovative approaches to investigate the physics of atomic-scale electronic devices and explore entirely new device concepts and functionalities for future quantum electronics.Read moreRead less
ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basi ....ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basis of integrated electronics technology with ultra-low energy consumption. This Centre’s development of innovative electronics could put Australia at the forefront of the international electronics industry.Read moreRead less