Linkage Infrastructure, Equipment And Facilities - Grant ID: LE200100197
Funder
Australian Research Council
Funding Amount
$1,102,947.00
Summary
Cryogenic Scanning Microwave Measurement Facility for Quantum Materials. This proposal addresses a major experimental capacity gap in Australian infrastructure for research and development of novel electronic materials and nanoscale quantum devices for future technologies. It will establish Australia's first non-contact, non-destructive, cryogenic scanning microwave microscopy facility for advanced materials characterization enabling new studies of these materials in the 2 to 300 Kelvin temperat ....Cryogenic Scanning Microwave Measurement Facility for Quantum Materials. This proposal addresses a major experimental capacity gap in Australian infrastructure for research and development of novel electronic materials and nanoscale quantum devices for future technologies. It will establish Australia's first non-contact, non-destructive, cryogenic scanning microwave microscopy facility for advanced materials characterization enabling new studies of these materials in the 2 to 300 Kelvin temperature range. The facility will provide crucial new information for the development of future quantum materials, enhancing our international competitiveness in the development of next-generation electronic materials and device technologies.Read moreRead less
Ion-beam synthesis of functional oxides for next generation memory devices. This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitabl ....Ion-beam synthesis of functional oxides for next generation memory devices. This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitable for non-volatile memory applications. However, their electrical response depends critically on stoichiometry and this must be precisely engineered for optimal device performance. This project aims to develop next-generation memory devices as a replacement for current flash memory. The proposed technology uses resistance changes in functional-oxides to store information, and offers the potential for smaller and faster memory.Read moreRead less
Controlling the forming and switching characteristics of non-volatile resistive memory devices using ion-implantation. This project will develop new techniques for improving the reliability and endurance of a new class of non-volatile memory devices for use in portable electronics and embedded electronic systems. Such developments are essential for the development of next-generation devices.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE180100054
Funder
Australian Research Council
Funding Amount
$824,080.00
Summary
Facility for electric and magnetic probes of materials at extreme conditions. This project aims to establish a readily accessible facility for measurement of electric and magnetic properties of materials under extreme temperature, magnetic field, and sensitivity conditions. The expected outcome is to build capacity for and support world-leading research into novel topological materials, atomically thin materials, materials with strong light-matter interactions and magnetic materials. The benefit ....Facility for electric and magnetic probes of materials at extreme conditions. This project aims to establish a readily accessible facility for measurement of electric and magnetic properties of materials under extreme temperature, magnetic field, and sensitivity conditions. The expected outcome is to build capacity for and support world-leading research into novel topological materials, atomically thin materials, materials with strong light-matter interactions and magnetic materials. The benefits to society are new devices for efficient generation, storage, transmission and switching of energy.Read moreRead less
ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basi ....ARC Centre of Excellence in Future Low Energy Electronics Technologies. This Centre aims to develop the scientific foundation and intellectual property for new electronics technologies. Decreasing energy use is a major societal challenge, and this Centre aims to meet that challenge by realising fundamentally new types of electronic conduction without resistance in solid-state systems at room temperature. Novel resistance-free electronic phenomena at room temperature are expected to form the basis of integrated electronics technology with ultra-low energy consumption. This Centre’s development of innovative electronics could put Australia at the forefront of the international electronics industry.Read moreRead less