Narrow band gap silicon: understanding and exploiting this new silicon phase. This project aims to study for the first time exciting new forms of conducting and insulating silicon that can be formed by simply pressing down on silicon with an indenter tip. As well as producing new science, the technological outcomes involve new devices and processes of significance to electronics and solar industries.
Linkage Infrastructure, Equipment And Facilities - Grant ID: LE110100127
Funder
Australian Research Council
Funding Amount
$250,000.00
Summary
Hall effect system for detailed electrical characterisation in semiconductors. Semiconductor characterisation is crucial for research and development in optimum growth and fabrication procedures. This Hall effect measurement system is an essential carrier characterisation technique for semiconductors with potential applications in microelectronics, optoelectronics and photovoltaics.