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Scheme : Linkage Projects
Research Topic : MAGNETIC RESONANCE
Australian State/Territory : ACT
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  • Funded Activity

    Linkage Projects - Grant ID: LP0883613

    Funder
    Australian Research Council
    Funding Amount
    $420,000.00
    Summary
    Minimising charge carrier recombination at silicon surfaces with improved dielectric coatings. The project will help to develop a vibrant PV industry in Australia, creating substantial employment opportunities. Spark Solar - one of the project partners - is the first dedicated PV manufacturer in Australia. There is a large and rapidly expanding overseas export market for solar panels. In addition, the large scale deployment of photovoltaic systems will help to reduce greenhouse gas emissions and .... Minimising charge carrier recombination at silicon surfaces with improved dielectric coatings. The project will help to develop a vibrant PV industry in Australia, creating substantial employment opportunities. Spark Solar - one of the project partners - is the first dedicated PV manufacturer in Australia. There is a large and rapidly expanding overseas export market for solar panels. In addition, the large scale deployment of photovoltaic systems will help to reduce greenhouse gas emissions and thus mitigate the magnitude and severity of the effects of global warming.
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    Funded Activity

    Linkage Projects - Grant ID: LP0347174

    Funder
    Australian Research Council
    Funding Amount
    $610,000.00
    Summary
    Overcoming performance limitations in multicrystalline silicon solar cells. This project aims to address the major impediments to improved efficiency of multicrystalline silicon solar cells, the most prevalent in industry today. Three key areas have been identified: understanding the fundamental source of carrier recombination in this material, the application of plasma silicon nitride to reducing this recombination, and developing a suitable technique for texturing the front surface of the cell .... Overcoming performance limitations in multicrystalline silicon solar cells. This project aims to address the major impediments to improved efficiency of multicrystalline silicon solar cells, the most prevalent in industry today. Three key areas have been identified: understanding the fundamental source of carrier recombination in this material, the application of plasma silicon nitride to reducing this recombination, and developing a suitable technique for texturing the front surface of the cells. By using novel, advanced techniques to gain a deeper physical understanding of these issues, it will be possible to develop new, cost-effective processes that improve efficiency and are applicable in industry.
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    Funded Activity

    Linkage Projects - Grant ID: LP0989488

    Funder
    Australian Research Council
    Funding Amount
    $200,000.00
    Summary
    Switching mechanisms in nonvolatile resistive memory using high-k dielectrics. Growth in the use of portable electronic devices, such as cameras, phones and MP3 players has resulted in an increased demand for low-power, high-density, non-volatile memory (NVM). One class of such memories aims to use resistance changes in thin dielectric films as a means of storing information. This project aims to develop a better understanding of these devices and to develop new and innovative processes for co .... Switching mechanisms in nonvolatile resistive memory using high-k dielectrics. Growth in the use of portable electronic devices, such as cameras, phones and MP3 players has resulted in an increased demand for low-power, high-density, non-volatile memory (NVM). One class of such memories aims to use resistance changes in thin dielectric films as a means of storing information. This project aims to develop a better understanding of these devices and to develop new and innovative processes for controlling data storage. The project is based on collaboration between researchers at the ANU and Silanna, an Australian start-up company aiming to develop and commercialise such technology.
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    Funded Activity

    Linkage Projects - Grant ID: LP0990012

    Funder
    Australian Research Council
    Funding Amount
    $380,000.00
    Summary
    A novel approach to direct nanopatterning of silicon for advanced phase-changed devices. This project will exploit key research developments at ANU in the field of nanotechnology, specifically nanofabrication of entirely new devices. In particular, this work will be exploited by a new Australian high-tech company, WRiota, to produce novel silicon phase change devices. The instrumentation developments will be commercialized by a leading nanoindentation company and the materials and device-related .... A novel approach to direct nanopatterning of silicon for advanced phase-changed devices. This project will exploit key research developments at ANU in the field of nanotechnology, specifically nanofabrication of entirely new devices. In particular, this work will be exploited by a new Australian high-tech company, WRiota, to produce novel silicon phase change devices. The instrumentation developments will be commercialized by a leading nanoindentation company and the materials and device-related outcomes and IP will be retained and used by WRiota. This project will further provide valuable opportunities for a number of research students and ECRs to gain experience in both the industrial and academic worlds.
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    Funded Activity

    Linkage Projects - Grant ID: LP0561927

    Funder
    Australian Research Council
    Funding Amount
    $210,000.00
    Summary
    Implant Isolation of III-V Compound Semiconductor Devices and Structures. Individual devices in an integrated circuit can be electrically isolated from each other by irradiating the materials between them with high energy ions. This creates defects in the semiconductor that trap charge carriers and thereby increase the resistance of the material. However, the effectiveness of this process depends on the material as well as irradiation and post-irradiation processing conditions. This project aim .... Implant Isolation of III-V Compound Semiconductor Devices and Structures. Individual devices in an integrated circuit can be electrically isolated from each other by irradiating the materials between them with high energy ions. This creates defects in the semiconductor that trap charge carriers and thereby increase the resistance of the material. However, the effectiveness of this process depends on the material as well as irradiation and post-irradiation processing conditions. This project aims to develop an implant isolation scheme for a new class of devices developed by Epitactix, an Australian start-up company founded on CSIRO research. This will be achieved by combining the ANU's experience and expertise in ion-irradiation and defect engineering with the device and processing expertise of Epitactix Pty Ltd.
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    Funded Activity

    Linkage Projects - Grant ID: LP0455328

    Funder
    Australian Research Council
    Funding Amount
    $360,000.00
    Summary
    Enhancing the Understanding and Performance of Passivating TiO2 Coatings for Photovoltaic Devices. Titanium dioxide (TiO2) has been widely used as an antireflection coating in the silicon (Si) photovoltaics industry as it exhibits excellent optical properties and low deposition cost. However, recently manufacturers have been turning to alternatives such as hydrogenated silicon nitride coatings that exhibit greatly improved electronic properties, but cost 4 - 10 times more to deposit. This proj .... Enhancing the Understanding and Performance of Passivating TiO2 Coatings for Photovoltaic Devices. Titanium dioxide (TiO2) has been widely used as an antireflection coating in the silicon (Si) photovoltaics industry as it exhibits excellent optical properties and low deposition cost. However, recently manufacturers have been turning to alternatives such as hydrogenated silicon nitride coatings that exhibit greatly improved electronic properties, but cost 4 - 10 times more to deposit. This project seeks to understand the fundamental limitations behind the poor surface passivation afforded by TiO2 to a Si wafer, and subsequently develop a passivating TiO2 coating that can reduce the cost of electricity generated by Si solar cells.
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    Funded Activity

    Linkage Projects - Grant ID: LP0777007

    Funder
    Australian Research Council
    Funding Amount
    $200,000.00
    Summary
    Low temperature fabrication of silicon-based thin film transistors (TFTs) for flat panel displays - an entirely new approach. This project represents an entirely new approach to low temperature crystallization of amorphous silicon, and its application to TFT fabrication in flat panel displays, and involves a partnership with the Australian high-tech company, WRiota. The research is in a field of high national priority, namely nanotechnology, since the technology is based on materials modificati .... Low temperature fabrication of silicon-based thin film transistors (TFTs) for flat panel displays - an entirely new approach. This project represents an entirely new approach to low temperature crystallization of amorphous silicon, and its application to TFT fabrication in flat panel displays, and involves a partnership with the Australian high-tech company, WRiota. The research is in a field of high national priority, namely nanotechnology, since the technology is based on materials modification at the nanoscale by nanoindentation. This project will further provide valuable opportunities for a number of research students and ECRs to gain experience in both the industrial and academic worlds and skills needed for Australia's nanotechnology workforce.
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    Active Funded Activity

    Linkage Projects - Grant ID: LP190100010

    Funder
    Australian Research Council
    Funding Amount
    $307,440.00
    Summary
    Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconducto .... Electrical contact engineering for next generation semiconductor devices. Contact resistivity and parasitic resistance have been identified as limiting factors in the performance of next-generation semiconductor devices. This project aims to understand these limitations and to develop methods to mitigate them through the application of advanced ion implantation processing. Specifically, this will involve: investigating the effect of selective doping on electrical properties of metal-semiconductor interfaces; determining how ultra-shallow dopant profiles are affected by device structure and processing; and developing improved methods for measuring ultra-low contact resistivity. The research will be undertaken as a collaboration between researchers at the Australian National University and Applied Materials Ltd.
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    Funded Activity

    Linkage Projects - Grant ID: LP150100693

    Funder
    Australian Research Council
    Funding Amount
    $410,000.00
    Summary
    Ion-beam synthesis of functional oxides for next generation memory devices. This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitabl .... Ion-beam synthesis of functional oxides for next generation memory devices. This project seeks to explore a low-temperature approach to stoichiometry control using direct oxide synthesis and defect-engineering based on ion-implantation, a routine semiconductor fabrication process. This has the potential to improve device manufacturability and functionality. In thin film form, transition metal oxides can be subjected to intense electric fields and exhibit characteristic resistance changes suitable for non-volatile memory applications. However, their electrical response depends critically on stoichiometry and this must be precisely engineered for optimal device performance. This project aims to develop next-generation memory devices as a replacement for current flash memory. The proposed technology uses resistance changes in functional-oxides to store information, and offers the potential for smaller and faster memory.
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    Funded Activity

    Linkage Projects - Grant ID: LP120100272

    Funder
    Australian Research Council
    Funding Amount
    $335,000.00
    Summary
    Controlling the forming and switching characteristics of non-volatile resistive memory devices using ion-implantation. This project will develop new techniques for improving the reliability and endurance of a new class of non-volatile memory devices for use in portable electronics and embedded electronic systems. Such developments are essential for the development of next-generation devices.
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